Analog Devices OP196, OP496, OP296 Datasheet

Micropower, Rail-to-Rail Input and Output

1
2
3
4

8
7
6
5

OP196

OUT A

V+

NULL

NC

NULL
–IN A
+IN A

V–

NC = NO CONNECT

1
2
3
4
5
6
7

14
13
12
11
10

9
8

OP496

OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C

OUT A

–IN A
+IN A

+V
+IN B
–IN B

OUT B

1
2
3
4
5
6
7

14
13
12
11
10

9
8

OP496

OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C

OUT A

–IN A
+IN A

+V
+IN B
–IN B

OUT B

OP296

OUT A

–IN A
+IN A

V–

OUT B
–IN B
+IN B

V+

8

1

4

5

OP496

OUT A

–IN A
+IN A

V+

OUT B

–IN B

+IN B

OUT D
–IN D
+IN D
V–

OUT C

+IN C
–IN C

14

1

7

8

a

FEATURES
Rail-to-Rail Input and Output Swing
Low Power: 60 mA/Amplifier
Gain Bandwidth Product: 450 kHz
Single-Supply Operation: +3 V to +12 V
Low Offset Voltage: 300 mV max
High Open-Loop Gain: 500 V/mV
Unity-Gain Stable
No Phase Reversal

APPLICATIONS
Battery Monitoring
Sensor Conditioners
Portable Power Supply Control
Portable Instrumentation

GENERAL DESCRIPTION

The OP196 family of CBCMOS operational amplifiers features
micropower operation and rail-to-rail input and output ranges.

The extremely low power requirements and guaranteed opera­tion from +3 V to +12 V make these amplifiers perfectly suited
to monitor battery usage and to control battery charging. Their
dynamic performance, including 26 nV/√
density, recommends them for battery-powered audio applica­tions. Capacitive loads to 200 pF are handled without oscillation.

The OP196/OP296/OP496 are specified over the HOT extended
industrial (–40°C to +125°C) temperature range. +3 V opera­tion is specified over the 0°C to +125°C temperature range.

The single OP196 and the dual OP296 are available in 8-lead
plastic DIP and SO-8 surface mount packages. The quad
OP496 is available in 14-lead plastic DIP and narrow SO-14
surface mount packages.

Hz voltage noise

Operational Amplifiers

OP196/OP296/OP496

PIN CONFIGURATIONS

8-Lead Narrow-Body SO

8-Lead Narrow-Body SO

1

OUT A

2

–IN A

OP296

3

+IN A

4

V–

8-Lead TSSOP

14-Lead Narrow-Body SO

8
7
6
5

V+
OUT B
–IN B
+IN B

8-Lead Plastic DIP

1

NULL
–IN A
+IN A

V–

OP196

2
3
4

NC = NO CONNECT

8-Lead Plastic DIP

1

OUT A

–IN A
+IN A

V–

OP296

2
3
4

14-Lead Plastic DIP

8
7
6
5

8
7
6
5

NC
V+
OUT A
NULL

V+
OUT B
–IN B
+IN B

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

14-Lead TSSOP

(RU Suffix)

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1998

OP196/OP296/OP496–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

(@ VS = +5.0 V, VCM = +2.5 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP196G, OP296G, OP496G 35 300 µV
–40°C ≤ T

≤ +125°C 650 µV

A

OP296H, OP496H 800 µV

≤ +125°C 1.2 mV

A

±1.5 ±8nA

≤ +125°C ±20 nA

A

0 +5.0 V

Input Bias Current I
Input Offset Current I

Input Voltage Range V

B
OS

–40°C ≤ T
–40°C ≤ TA ≤ +125°C ±10 ±50 nA

–40°C ≤ T

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 5.0 V,

≤ +125°C65 dB

A

≤ 4.7 V,

OUT

≤ +125°C 150 200 V/mV

A

Large Signal Voltage Gain A

Long-Term Offset Voltage V

VO

OS

–40°C ≤ T
RL = 100 kΩ,

0.30 V ≤ V
–40°C ≤ T
G Grade, Note 1 550 µV
H Grade, Note 1 1 mV

Offset Voltage Drift ∆V

/∆T G Grade, Note 2 1.5 µV/°C

OS

H Grade, Note 2 2 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Output Current I

OH

OL

OUT

IL = –100 µA 4.85 4.92 V

= 1 mA 4.30 4.56 V

I

L

= 2 mA 4.1 V

I

L

IL = –1 mA 36 70 mV

= –1 mA 350 550 mV

I

L

= –2 mA 750 mV

I

L

±4mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR ±2.5 V ≤ V

–40°C ≤ T

Supply Current per Amplifier I

SY

V

OUT

≤ ±6 V,

S

≤ +125°C85 dB

A

= 2.5 V, RL =

∞

60 µA

–40°C ≤ TA ≤ +125°C4580µA

DYNAMIC PERFORMANCE

Slew Rate SR R

= 100 kΩ 0.3 V/µs

L

Gain Bandwidth Product GBP 350 kHz
Phase Margin ø

m

47 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40° C to +25°C delta and the +25° C to +125 ° C delta.

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 0.8 µV p-p

n
n

n

f = 1 kHz 26 nV/√Hz
f = 1 kHz 0.19 pA/√Hz

–2–

REV. B

OP196/OP296/OP496

ELECTRICAL SPECIFICATIONS

(@ VS = +3.0 V, VCM = +1.5 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP196G, OP296G, OP496G 35 300 µV
0°C ≤ T

≤ +125°C 650 µV

A

OP296H, OP496H 800 µV

≤ +125°C 1.2 mV

A

±10 ±50 nA
±1 ±8nA

0 +3.0 V

Input Bias Current I
Input Offset Current I

Input Voltage Range V

0°C ≤ T

B
OS

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 3.0 V,

≤ +125°C60 dB

A

Large Signal Voltage Gain A
Long-Term Offset Voltage V

VO
OS

0°C ≤ T
RL = 100 kΩ 80 200 V/mV
G Grade, Note 1 550 µV
H Grade, Note 1 1 mV

Offset Voltage Drift ∆V

/∆T G Grade, Note 2 1.5 µV/°C

OS

H Grade, Note 2 2 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V
Output Voltage Swing Low V

OH
OL

IL = 100 µA 2.85 V
IL = –100 µA70mV

POWER SUPPLY

Supply Current per Amplifier I

SY

= 1.5 V, RL =

OUT

∞

40 60 µA

V
0°C ≤ TA ≤ +125°C80µA

DYNAMIC PERFORMANCE

Slew Rate SR R

= 100 kΩ 0.25 V/µs

L

Gain Bandwidth Product GBP 350 kHz
Phase Margin ø

m

45 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the 0° C to +25°C delta and the +25°C to +125 ° C delta.

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 0.8 µV p-p

n
n

n

f = 1 kHz 26 nV/√Hz
f = 1 kHz 0.19 pA/√Hz

REV. B

–3–

OP196/OP296/OP496
ELECTRICAL SPECIFICATIONS

(@ VS = +12.0 V, VCM = +6 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP196G, OP296G, OP496G 35 300 µV
0°C ≤ T

≤ +125°C 650 µV

A

OP296H, OP496H 800 µV

≤ +125°C 1.2 mV

A

±1 ±8nA

≤ +125°C ±15 nA

A

0 +12 V

Input Bias Current I
Input Offset Current I

Input Voltage Range V

B
OS

0°C ≤ T
–40°C ≤ TA ≤ +125°C ±10 ±50 nA

–40°C ≤ T

CM

Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ +12 V,

≤ +125°C65 dB

A

Large Signal Voltage Gain A
Long-Term Offset Voltage V

VO
OS

–40°C ≤ T
RL = 100 kΩ 300 1000 V/mV
G Grade, Note 1 550 µV
H Grade, Note 1 1 mV

Offset Voltage Drift ∆V

/∆T G Grade, Note 2 1.5 µV/°C

OS

H Grade, Note 2 2 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V
Output Voltage Swing Low V
Output Current I

OH

OL

OUT

IL = 100 µA 11.85 V

= 1 mA 11.30 V

I

L

IL = –1 mA 70 mV

= –1 mA 550 mV

I

L

±4mA

POWER SUPPLY

Supply Current per Amplifier I
Supply Voltage Range V

SY

= 6 V, RL =

OUT

–40°C ≤ T

S

A

∞

60 µA

≤ +125°C80µA

+3 +12 V

V

DYNAMIC PERFORMANCE

Slew Rate SR R

= 100 kΩ 0.3 V/µs

L

Gain Bandwidth Product GBP 450 kHz
Phase Margin ø

m

50 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40° C to +25°C delta and the +25° C to +125 ° C delta.

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 0.8 µV p-p

n
n

n

f = 1 kHz 26 nV/√Hz
f = 1 kHz 0.19 pA/√Hz

REV. B–4–

OP196/OP296/OP496

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+15 V

Input Voltage
Differential Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15 V

2

. . . . . . . . . . . . . . . . . . . . . . .+15 V

1

Output Short Circuit Duration . . . . . . . . . . . . . . . . .Indefinite

Storage Temperature Range

P, S, RU Package . . . . . . . . . . . . . . . . . . . .–65°C to +150°C

Operating Temperature Range

OP196G, OP296G, OP496G, H . . . . . . . –40°C to +125°C

Junction Temperature Range

P, S, RU Package . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 60sec) . . . . . . . +300°C

Package Type u

3

JA

u

JC

Units

8-Lead Plastic DIP 103 43 °C/W
8-Lead SOIC 158 43 °C/W
8-Lead TSSOP 240 43 °C/W
14-Lead Plastic DIP 83 39 °C/W
14-Lead SOIC 120 36 °C/W
14-Lead TSSOP 180 35 °C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.

2

For supply voltages less than +15 V, the absolute maximum input voltage is
equal to the supply voltage.

3

θJA is specified for the worst case conditions, i.e., θJA is specified for device in

socket for P-DIP package; θJA is specified for device soldered in circuit board
for SOIC and TSSOP packages.

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP196GP –40°C to +125°C 8-Lead Plastic DIP N-8
OP196GS –40°C to +125°C 8-Lead SOIC SO-8

OP296GP –40°C to +125°C 8-Lead Plastic DIP N-8
OP296GS –40°C to +125°C 8-Lead SOIC SO-8
OP296HRU –40°C to +125°C 8-Lead TSSOP RU-8

OP496GP –40°C to +125°C 14-Lead Plastic DIP N-14
OP496GS –40°C to +125°C 14-Lead SOIC SO-14
OP496HRU –40°C to +125°C 14-Lead TSSOP RU-14

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP196/OP296/OP496 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, prope r
ESD precautions are recommended to avoid performance degradation or loss of functionalit y .

REV. B –5–