Analog Devices OP191 291 491 c Datasheet

Micropower Single-Supply

1 2

5 6 7

3 4

14 13

9 8

12 11

OP491

OUTD –IND +IND –V +INC –INC OUTC

OUTA

–INA +INA

+V +INB –INB

OUTB

Rail-to-Rail Input/Output Op Amps

OP191/OP291/OP491

FEATURES Single-Supply Operation: 2.7 V to 12 V Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 300 ␮A/Amp Wide Bandwidth: 3 MHz Slew Rate: 0.5 V/␮s Low Offset Voltage: 700 ␮V No Phase Reversal

APPLICATIONS Industrial Process Control Battery-Powered Instrumentation Power Supply Control and Protection Telecommunications Remote Sensors Low Voltage Strain Gage Amplifiers DAC Output Amplifiers

GENERAL DESCRIPTION

The OP191, OP291, and OP491 are single, dual, and quad micropower, single-supply, 3 MHz bandwidth amplifiers featuring rail-to-rail inputs and outputs. All are guaranteed to operate from a +3 V single supply as well as ± 5 V dual supplies.

Fabricated on Analog Devices’ CBCMOS process, the OP191 family has a unique input stage that allows the input voltage to safely extend 10 V beyond either supply without any phase inversion or latch-up. The output voltage swings to within millivolts of the supplies and continues to sink or source current all the way to the supplies.

Applications for these amplifiers include portable telecommunications equipment, power supply control and protection, and interface for transducers with wide output ranges. Sensors requiring a rail-to-rail input amplifier include Hall effect, piezo electric, and resistive transducers.

The ability to swing rail-to-rail at both the input and output enables designers to build multistage filters in single-supply systems and to maintain high signal-to-noise ratios.

The OP191/OP291/OP491 are specified over the extended industrial –40∞C to +125∞C temperature range. The OP191 single and OP291 dual amplifiers are available in 8-lead plastic SOIC surface-mount packages. The OP491 quad is available in 14-lead PDIP, narrow 14-lead SOIC, and 14-lead TSSOP packages.

PIN CONFIGURATIONS

8-Lead Narrow-Body

SOIC

–INA

+INA

OP191

–V

OUTA

14-Lead Narrow-Body

SOIC

OP491

OUTD

–IND

+IND

–V

+INC

–INC

OUTC

OUTA

–INA

+INA

+INB

–INB

OUTB

14-Lead TSSOP

8-Lead Narrow-Body

SOIC

OUTA

–INA

+INA

OP291

–V

OUTB

–INB

+INB

14-Lead PDIP

OUTA

–INA

+INA

+INB

–INB

OUTB

OP491

OUTD

–IND

+IND

–V

+INC

–INC

OUTC

REV. C

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

OP191/OP291/OP491–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

(@ VS = 3.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25ⴗC, unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage OP191G V

OP291G/OP491G V

Input Bias Current I

–40∞C £ T

£ +125∞C1mV

£ +125∞C 1.25 mV

80 500 mV

80 700 mV

30 65 nA

–40∞C £ TA £ +125∞C95nA

Input Offset Current I

–40∞C £ T

£ +125∞C22nA

0.1 11 nA

Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain A

Offset Voltage Drift DV Bias Current Drift DI

/DT 1.1 mV/∞C

/DT 100 pA/∞C

= 0 V to 2.9 V 70 90 dB

–40∞C £ T

£ +125∞C6587 dB

RL = 10 kW, VO = 0.3 V to 2.7 V 25 70 V/mV –40∞C £ T

£ +125∞C50V/mV

Offset Current Drift DIOS/DT20pA/∞C

OUTPUT CHARACTERISTICS

Output Voltage High V

RL = 100 kW to GND 2.95 2.99 V –40∞C to +125∞C2.902.98 V

= 2 kW to GND 2.8 2.9 V

–40∞C to +125∞C2.702.80 V

Output Voltage Low V

RL = 100 kW to V+ 4.5 10 mV –40∞C to +125∞C35mV

= 2 kW to V+ 40 75 mV

–40∞C to +125∞C 130 mV

Short-Circuit Limit I

Sink/Source ± 8.75 ± 13.50 mA –40∞C to +125∞C ± 6.0 ± 10.5 mA

Open-Loop Impedance Z

OUT

f = 1 MHz, AV = 1 200 W

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB

£ +125∞C75110 dB

Supply Current/Amplifier I

–40∞C £ T VO = 0 V 200 350 mA –40∞C £ TA £ +125∞C 330 480 mA

DYNAMIC PERFORMANCE

Slew Rate +SR RL = 10 kW 0.4 V/ms Slew Rate –SR R Full-Power Bandwidth BW Settling Time t

= 10 kW 0.4 V/ms

1% Distortion 1.2 kHz To 0.01% 22 ms

Gain Bandwidth Product GBP 3 MHz Phase Margin q

45 Degrees

Channel Separation CS f = 1 kHz, RL = 10 kW 145 dB

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 2 mV p-p Voltage Noise Density e Current Noise Density i

Specifications subject to change without notice.

f = 1 kHz 35 nV/÷Hz

0.8 pA/÷Hz

–2–

REV. C

OP191/OP291/OP491

ELECTRICAL SPECIFICATIONS

(@ VS = 5.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25ⴗC, unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage OP191 V

OP291/OP491 V

Input Bias Current I

–40∞C £ T

£ +125∞C 1.0 mV

£ +125∞C 1.25 mV

80 500 mV

80 700 mV

30 65 nA

–40∞C £ TA £ +125∞C95nA

Input Offset Current I

–40∞C £ T

£ +125∞C22nA

0.1 11 nA

Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR V

Large Signal Voltage Gain A

Offset Voltage Drift DV

/DT –40∞C £ TA £ +125∞C 1.1 mV/∞C

= 0 V to 4.9 V 70 93 dB

–40∞C £ T

£ +125∞C6590 dB

RL = 10 kW, VO = 0.3 V to 4.7 V 25 70 V/mV –40∞C £ T

£ +125∞C50V/mV

Bias Current Drift DIB/DT 100 pA/∞C Offset Current Drift DIOS/DT20pA/∞C

OUTPUT CHARACTERISTICS

Output Voltage High V

RL = 100 kW to GND 4.95 4.99 V –40∞C to +125∞C 4.90 4.98 V

= 2 kW to GND 4.8 4.85 V

–40∞C to +125∞C 4.65 4.75 V

Output Voltage Low V

RL = 100 kW to V+ 4.5 10 mV –40∞C to +125∞C35mV

= 2 kW to V+ 40 75 mV

–40∞C to +125∞C 155 mV

Short-Circuit Limit I

Sink/Source ± 8.75 ± 13.5 mA –40∞C to +125∞C ± 6.0 ± 10.5 mA

Open-Loop Impedance Z

OUT

f = 1 MHz, AV = 1 200 W

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB

£ +125∞C75110 dB

Supply Current/Amplifier I

–40∞C £ T VO = 0 V 220 400 mA –40∞C £ TA £ +125∞C 350 500 mA

DYNAMIC PERFORMANCE

Slew Rate +SR RL = 10 kW 0.4 V/ms Slew Rate –SR R Full-Power Bandwidth BW Settling Time t

= 10 kW 0.4 V/ms

1% Distortion 1.2 kHz To 0.01% 22 ms

Gain Bandwidth Product GBP 3 MHz Phase Margin q

45 Degrees

Channel Separation CS f = 1 kHz, RL = 10 kW 145 dB

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 2 mV p-p Voltage Noise Density e Current Noise Density i

NOTE +5 V specifications are guaranteed by +3 V and ± 5 V testing.

Specifications subject to change without notice.

f = 1 kHz 35 nV/÷Hz

0.8 pA/÷Hz

REV. C

–3–

OP191/OP291/OP491

ELECTRICAL SPECIFICATIONS

(@ VO = ⴞ5.0 V, –4.9 V £ VCM £ +4.9 V, TA = 25ⴗC, unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage OP191 V

OP291/OP491 V

Input Bias Current I

Input Offset Current I

–40∞C £ T

£ +125∞C1mV

£ +125∞C 1.25 mV

£ +125∞C95nA

£ +125∞C22nA

80 500 mV

80 700 mV

30 65 nA

0.1 11 nA

Input Voltage Range –5 +5 V Common-Mode Rejection CMR V

Large Signal Voltage Gain A

Offset Voltage Drift DV Bias Current Drift DI

/DT 1.1 mV/∞C

/DT 100 pA/∞C

= ± 5 V 75 100 dB

–40∞C £ T

£ +125∞C6797 dB

RL = 10 kW, VO = ± 4.7 V, 25 70 –40∞C £ T

£ +125∞C50V/mV

Offset Current Drift DIOS/DT20pA/∞C

OUTPUT CHARACTERISTICS

Output Voltage Swing V

RL = 100 kW to GND ± 4.93 ± 4.99 V –40∞C to +125∞C ± 4.90 ± 4.98 V

= 2 kW to GND ± 4.80 ± 4.95 V

Short-Circuit Limit I

–40∞C £ T Sink/Source ± 8.75 ± 16.00 mA

£ +125∞C ± 4.65 ± 4.75 V

–40∞C to +125∞C ± 6 ± 13 mA

Open-Loop Impedance Z

OUT

f = 1 MHz, AV = 1 200 W

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

= ± 5 V 80 110 dB

–40∞C £ T

£ +125∞C70100 dB

VO = 0 V 260 420 mA –40∞C £ TA £ +125∞C 390 550 mA

DYNAMIC PERFORMANCE

Slew Rate ± SR R Full-Power Bandwidth BW Settling Time t

=10 kW 0.5 V/ms

1% Distortion 1.2 kHz To 0.01% 22 ms

Gain Bandwidth Product GBP 3 MHz Phase Margin q

45 Degrees

Channel Separation CS f = 1 kHz 145 dB

NOISE PERFORMANCE

Voltage Noise e Voltage Noise Density e Current Noise Density i

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 2 mV p-p

f = 1 kHz 35 nV/÷Hz

0.8 pA/÷Hz

INPUT

OUTPUT

100

VS = ⴞ5V

= 2k⍀

= +1

= 20V p-p

200␮s

Figure 1. Input and Output with Inputs Overdriven by 5 V

–4–

REV. C

OP191/OP291/OP491

ABSOLUTE MAXIMUM RATINGS

1, 2

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . GND to V

10 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V

Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite

Storage Temperature Range

N, R, RU Packages . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Operating Temperature Range

OP191G/OP291G/OP491G . . . . . . . . . . . . –40∞C to +125∞C

Junction Temperature Range

N, R, RU Packages . . . . . . . . . . . . . . . . . . –65∞C to +150∞C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300∞C

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP191GS –40ⴗC to +125ⴗC 8-Lead SOIC R-8 OP191GS-REEL –40ⴗC to +125ⴗC 8-Lead SOIC R-8 OP191GS-REEL7 –40ⴗC to +125ⴗC 8-Lead SOIC R-8 OP291GS –40ⴗC to +125ⴗC 8-Lead SOIC R-8 OP291GS-REEL –40ⴗC to +125ⴗC 8-Lead SOIC R-8 OP291GS-REEL7 –40ⴗC to +125ⴗC 8-Lead SOIC R-8 OP291GSZ OP291GSZ-REEL OP291GSZ-REEL7

–40ⴗC to +125ⴗC 8-Lead SOIC R-8 –40ⴗC to +125ⴗC 8-Lead SOIC R-8

–40ⴗC to +125ⴗC 8-Lead SOIC R-8 OP491GP –40ⴗC to +125ⴗC 14-Lead PDIP N-14 OP491GS –40ⴗC to +125ⴗC 14-Lead SOIC R-14 OP491GS-REEL –40ⴗC to +125ⴗC 14-Lead SOIC R-14 OP491GS-REEL7 –40ⴗC to +125ⴗC 14-Lead SOIC R-14 OP491GSZ OP491GSZ-REEL OP491GSZ-REEL7

–40ⴗC to +125ⴗC 14-Lead SOIC R-14

–40ⴗC to +125ⴗC 14-Lead SOIC R-14 OP491GRU-REEL –40ⴗC to +125ⴗC 14-Lead TSSOP RU-14 OP491GBC DIE form

Z = Pb-free part.

Package Type ␪

␪

Unit

8-Lead SOIC (R) 158 43 ∞C/W 14-Lead PDIP (N) 76 33 ∞C/W 14-Lead SOIC (R) 120 36 ∞C/W 14-Lead TSSOP (RU) 180 35 ∞C/W

NOTES

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Absolute maximum ratings apply to both DICE and packaged parts, unless

otherwise noted.

qJA is specified for the worst-case conditions; i.e., q

for PDIP packages; q and SOIC packages.

is specified for device soldered in circuit board for TSSOP

is specified for device in socket

[S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix]

[P-Suffix] [S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix] [S-Suffix]

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the

WARNING!

OP191/OP291/OP491 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.

REV. C

–5–

ESD SENSITIVE DEVICE

OP191/OP291/OP491—Typical Performance Characteristics

INPUT OFFSET VOLTAGE (mV)

12525–40

VCM = 0V

TEMPERATURE (ⴗC)

–0.02

–0.04

–0.06

–0.08

–0.10

–0.12

–0.14

VCM = 2.9V

VS = 3V

VCM = 0.1V

VCM = 3V

180

VS = 3V

160

= 25ⴗC

BASED ON

140

1200 OP AMPS

120

100

UNITS

–0.18

INPUT OFFSET VOLTAGE (mV)

0.14

0.06–0.02–0.10

0.22

TPC 1. OP291 Input Offset Voltage Distribution, V

–10

–20

–30

–40

INPUT BIAS CURRENT (nA)

–50

–60

= 3 V

VS = 3V

TEMPERATURE (ⴗC)

= 3V

= 2.9V

= 0.1V

= 0V

120

100

UNITS

INPUT OFFSET VOLTAGE (␮V/ ⴗC)

TPC 2. OP291 Input Offset Voltage Drift Distribution, VS = 3 V

–0.2

VS = 3V

–0.4

–0.6

–0.8

–1.0

–1.2

–1.4

INPUT OFFSET CURRENT (nA)

–1.6

12525–40 85

–1.8

VS = 3V –40ⴗC < T BASED ON 600 OP AMPS

1400

VCM = 0.1V

VCM = 2.9V

TEMPERATURE (ⴗC)

VCM = 3V

< +125ⴗC

VCM = 0V

64325

12525–40

TPC 3. Input Offset Voltage vs. Temperature, V

VS = 3V 24

–6

–12

–18

–24

INPUT BIAS CURRENT (nA)

–30

–36

0.30

INPUT COMMON-MODE VOLTAGE (V)

= 3 V

2.72.42.11.81.51.20.900.60

3.0

TPC 4. Input Bias Current vs. Temperature, V

3.00

2.95

2.90

2.85

2.80

OUTPUT VOLTAGE SWING (V)

VS = 3V

2.75 –40

= 3 V

+VO @ RL = 100k⍀

+VO @ RL = 2k⍀

TEMPERATURE (ⴗC)

TPC 7. Output Voltage Swing vs. Temperature, VS = 3 V

TPC 5. Input Offset Current vs. Temperature, VS = 3 V

160

140

120

100

OPEN-LOOP GAIN (dB)

–20

125

–40

100

1k 10k 100k 1M 10M

FREQUENCY (Hz)

VS =3V

= 25ⴗC

135

180

225

270

TPC 8. Open-Loop Gain and Phase vs. Frequency, VS = 3 V

TPC 6. Input Bias Current vs. Input Common-Mode Voltage, VS = 3 V

1200

RL = 100k⍀,

= 2.9V

1000

800

600

400

PHASE SHIFT (ⴗC)

OPEN-LOOP GAIN (V/mV)

200

RL = 100k⍀,

= 0.1V

VS = 3V, VO = 0.3V/2.7V

TEMPERATURE (ⴗC)

TPC 9. Open-Loop Gain vs. Temperature, VS = 3 V

12525–40

–6–

REV. C

+ 14 hidden pages

Analog Devices OP191 291 491 c Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

GENERAL DESCRIPTION

PIN CONFIGURATIONS

ABSOLUTE MAXIMUM RATINGS

ORDERING GUIDE