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OP186
Datasheet
12 pgs194.45 Kb0

Analog Devices OP186 Datasheet

5 mA, Rail-to-Rail
a
FEATURES Low Supply Current: 5.5 mA max Single-Supply Operation: 2.2 V to 12 V Wide Bandwidth: 160 kHz Wide Input Voltage Range Rail-to-Rail Output Swing No Phase Reversal Output Short Circuit Current: 610 mA
APPLICATIONS Portable Phones Comparator Battery Powered Instrumentation Safety Monitoring Remote Sensors Low Voltage Strain Gauge Amplifiers
GENERAL DESCRIPTION
The OP186 is a single, low voltage, ultralow power single­supply, amplifier featuring rail-to-rail outputs. Specifications are guaranteed at +2.2 V, +2.7 V, and +5.0 V single supply as well
as ±5 V dual supplies.
Fabricated on Analog Device’s CBCMOS process, the OP186 features a bipolar input and an output that swings to within millivolts of the supplies while continuing to sink or source current all the way to the supplies.
Applications for these amplifiers include safety monitoring, portable equipment, battery and power supply control, and as signal conditioning and interface for transducers in very low power systems.
The output’s ability to swing rail-to-rail and not increase supply current when the output is driven to a supply enables the OP186 to be used as a comparator in very low power systems.
The OP186 is specified over the extended industrial (–40°C to +125°C) temperature range. The OP186 is available in the
SOT-23-5 package.
Output Operational Amplifier
OP186
FUNCTIONAL BLOCK DIAGRAM
5-Lead SOT-23
(RT Suffix)
OUT
+IN
V+
1
OP186
2
TOP VIEW
(Not to Scale)
3
5
V–
4
–IN
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
OP186–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = +2.2 V, VCM = +1.1 V, TA = +258C unless otherwise noted)
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS␣
Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift ∆V Bias Current Drift ∆I
1
OS
0°C ≤ T
B
0°C ≤ T
OS
0°C ≤ T
CM
CM
0°C ≤ T
VO
R
L
0°C ≤ T
/∆T 3.5 µV/°C
OS
/∆T 30 pA/°C
B
≤ +125°C6mV
A
≤ +125°C10nA
A
≤ +125°C5nA
A
0 1.2 V
= 0 V to 1.2 V 65 90 dB
≤ +125°C60 dB
A
= 1 MΩ , V
A
= 0.3 V to 1.9 V 5 18 V/mV
O
≤ +125°C 2 V/mV
0.8 5 mV
37 nA
0.1 2 nA
Offset Current Drift ∆IOS/∆T 3 pA/°C
OUTPUT CHARACTERISTICS
R
Output Voltage High V
OH
= 100 kΩ to GND 2.125 2.16 V
L
0°C to +125°C 2.1 V
R
Output Voltage Low V
OL
= 100 kΩ to V+ 25 60 mV
L
0°C to +125°C75mV
Short Circuit Limit I
SC
±500 µA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.2 V to 12 V 78 95 dB
S
0°C ≤ T
≤ +125°C76 dB
A
45 µA
0°C ≤ TA ≤ +125°C 5.5 µA
DYNAMIC PERFORMANCE␣
Slew Rate SR R Turn-On Time A
= 100 kΩ, C
L
= 1, V
V
= 20, V
A
V
= 15 pF 60 V/ms
L
= 1 17 µs
O
= 1 35 µs
O
Gain Bandwidth Product GBP 150 kHz
Phase Margin Φo 60 Degrees
NOISE PERFORMANCE␣
Voltage Noise Density e Current Noise Density i
NOTE
1
VOS is tested under a no load condition.
Specifications subject to change without notice.
n
n
f = 1 kHz 80 nV/√Hz
<1 pA/√Hz
–2– REV. 0
OP186
ELECTRICAL CHARACTERISTICS
(VS = +2.7 V, VCM = +1.35 V, TA = +258C unless otherwise noted)
1
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS␣
Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift ∆V Bias Current Drift ∆I
2
OS
–40°C ≤ T
B
–40°C ≤ T
OS
–40°C ≤ T
CM
CM
–40°C ≤ T
R
VO
= 1 MΩ, V
L
–40°C ≤ T
/∆T 3.5 µV/°C
OS
/∆T 30 pA/°C
B
≤ +125°C6mV
A
≤ +125°C10nA
A
≤ +125°C5nA
A
0 1.7 V
= 0 V to 1.7 V 65 90 dB
≤ +125°C60 dB
A
= 0.3 V to 2.4 V 5 22 V/mV
O
≤ +125°C 2 V/mV
A
0.6 5 mV
37 nA
0.1 2 nA
Offset Current Drift ∆IOS/∆T 3 pA/°C
OUTPUT CHARACTERISTICS
R
Output Voltage High V
OH
= 100 kΩ to GND 2.625 2.665 V
L
–40°C to +125°C 2.6 V
R
Output Voltage Low V
OL
= 100 kΩ to V+ 22 50 mV
L
–40°C to +125°C75mV
Short Circuit Limit I
SC
±0.8 mA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.7 V to 12 V 78 95 dB
S
–40°C ≤ T
≤ +125°C76 dB
A
4.2 5.5 µA
–40°C ≤ TA ≤ +125°C7µA
DYNAMIC PERFORMANCE␣
Slew Rate SR R Turn-On Time A
=100 kΩ, C
L
= 1, V
V
= 20, V
A
V
= 15 pF 61 V/ms
L
= 1 17 µs
O
= 1 25 µs
O
Gain Bandwidth Product GBP 155 kHz
Phase Margin Φo 59 Degrees
NOISE PERFORMANCE␣
Voltage Noise Density e Current Noise Density i
NOTES
1
+2.7 V specifications are guaranteed by +2.2 V and ±5 V testing.
2
VOS is tested under a no load condition.
Specifications subject to change without notice.
n
n
f = 1 kHz 80 nV/√Hz
<1 pA/√Hz
–3–REV. 0
OP186–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(VS = +5.0 V, VCM = +2.5 V, TA = +258C unless otherwise noted)
1
Parameter Symbol Conditions Min Typ Max Units
INPUT CHARACTERISTICS
Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A
Offset Voltage Drift ∆V Bias Current Drift ∆I
␣
2
OS
–40°C ≤ T
B
–40°C ≤ T
OS
–40°C ≤ T
CM
CM
–40°C ≤ T
R
VO
= 1 MΩ, V
L
–40°C ≤ T
/∆T –40°C ≤ TA ≤ +125°C 3.3 µV/°C
OS
/∆T 25 pA/°C
B
≤ +125°C6mV
A
≤ +125°C10nA
A
≤ +125°C5nA
A
04V
= 0 V to 4.0 V 65 90 dB
≤ +125°C60 dB
A
= 0.5 V to 4.5 V 5 40 V/mV
O
≤ +125°C 2 V/mV
A
0.6 5 mV
37 nA
0.1 2 nA
Offset Current Drift ∆IOS/∆T 3 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High V
Output Voltage Low V
Short Circuit Limit I
OH
OL
SC
R
= 100 kΩ to GND 4.925 4.965 V
L
–40°C ≤ T
R
= 100 kΩ to V+ 20 50 mV
L
–40°C ≤ T
≤ +125°C 4.9 V
A
≤ +125°C75mV
A
±3.5 mA
POWER SUPPLY␣
Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
SY
= 2.7 V to 12 V 78 95 dB
S
–40°C ≤ T
≤ +125°C76 dB
A
4.7 6 µA
–40°C ≤ TA ≤ +125°C 7.5 µA
DYNAMIC PERFORMANCE␣
Slew Rate SR R
= 100 kΩ, C
L
= 15 pF 62 V/ms
L
Gain Bandwidth Product GBP 155 kHz
Phase Margin Φo 59 Degrees Saturation Recovery Time 60 µs
NOISE PERFORMANCE␣
Voltage Noise e Voltage Noise Density e
p-p 0.1 Hz to 10 Hz 6 µV p-p
n
n
f = 1 kHz 80 nV/√Hz f = 10 kHz 70 nV/√
Current Noise Density i
NOTES
1
+5 V specifications are guaranteed by +2.2 V and ± 5 V testing.
2
VOS is tested under a no load condition.
Specifications subject to change without notice.
n
<1 pA/√Hz
Hz
–4– REV. 0
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