ANALOG DEVICES AD5246 Service Manual

128-Position I2C-Compatible
SDA
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FEATURES

128-position End-to-end resistance 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ Ultracompact SC70-6 (2 mm × 2.1 mm) package
2
C® compatible interface
I Full read/write of wiper register Power-on preset to midscale Single supply 2.7 V to 5.5 V Low temperature coefficient 45 ppm/°C Low power, I Wide operating temperature –40°C to +125°C Evaluation board available Available in lead-free (Pb-free) package

APPLICATIONS

Mechanical potentiometer replacement in new designs Transducer adjustment of pressure, temperature, position,
chemical, and optical sensors RF amplifier biasing Automotive electronics adjustment Gain control and offset adjustment

GENERAL OVERVIEW

The AD5246 provides a compact 2 mm × 2.1 mm packaged solution for 128-position adjustment applications. This device performs the same electronic adjustment function as a variable resistor. Available in four different end-to-end resistance values (5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ), these low temperature coefficient devices are ideal for high accuracy and stability variable resistance adjustments.
The wiper settings are controllable through the I digital interface, which can also be used to read back the present wiper register control word. The resistance between the wiper and either end point of the fixed resistor varies linearly with respect to the digital code transferred into the RDAC
= 3 μA typical
DD
2
C compatible
1
latch.
Digital Resistor

FUNCTIONAL BLOCK DIAGRAM

V
DD
SCL
I2C INTERFACE
WIPER
REGISTER
GND
Figure 1.
A
AD5246
W
B
03875-001
Operating from a 2.7 V to 5.5 V power supply and consuming
lows for usage in portable battery-operated applications.
3 µA al
1
The terms digital potentiometer, VR, and RDAC are used interchangeably
in this document.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved.
AD5246
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TABLE OF CONTENTS
Specifications..................................................................................... 3
Electrical Characteristics—5 kΩ Version.................................. 3
Electrical Characteristics—10 kΩ, 50 kΩ, 100 kΩ Versions .. 4
Timing Characteristics ................................................................ 5
Absolute Maximum Ratings............................................................ 6
Pin Configuration and Function Descriptions............................. 7
Typical Performance Characteristics ............................................. 8
Test Ci r c ui t s .....................................................................................11
2
I
C Interface..................................................................................... 12
Operation......................................................................................... 13
Programming the Variable Resistor......................................... 13
REVISION HISTORY
7/05—Rev. 0 to Rev. A
Changes to Table 1 ............................................................................3
Changes to Table 2 ............................................................................4
Changes to Absolute Maximum Ratings .......................................6
Moved Pin Configuration and Function Descriptions ................7
Deleted Table 7 ................................................................................12
Changes to Operation Section .......................................................13
Deleted Figure 31.............................................................................14
Changes to Figure 30 and Figure 32 .............................................14
2
I
C Compatible 2-Wire Serial Bus ........................................... 13
Level Shifting for Bidirectional Interface................................ 14
ESD Protection ........................................................................... 14
Terminal Voltage Operating Range ......................................... 14
Maximum Operating Current .................................................. 14
Power-Up Sequence ................................................................... 14
Layout and Power Supply Bypassing ....................................... 15
Constant Bias to Retain Resistance Setting............................. 15
Evaluation Board ........................................................................ 15
Outline Dimensions ....................................................................... 16
Ordering Guide .......................................................................... 16
9/03—Revision 0: Initial Version
Rev. A | Page 2 of 16
AD5246
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SPECIFICATIONS

ELECTRICAL CHARACTERISTICS—5 KΩ VERSION

VDD = 5 V ± 10% or 3 V ± 10%; VA = +VDD; –40°C < TA < +125°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ1Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resistor Differential Nonlinearity Resistor Integral Nonlinearity Nominal Resistor Tolerance Resistance Temperature Coefficient (∆RAB/RAB)/∆T Wiper = no connect 45 ppm/°C R
WB
Code = 0x00, VDD = 2.7 V 150 400 Ω
RESISTOR TERMINALS
Voltage Range
4
Capacitance5 B C Capacitance5 W C Common-Mode Leakage I
DIGITAL INPUTS AND OUTPUTS
Input Logic High V Input Logic Low V Input Logic High V Input Logic Low V Input Current I Input Capacitance
5
POWER SUPPLIES
Power Supply Range V Supply Current I Power Dissipation
6
Power Supply Sensitivity PSSR VDD = +5 V ± 10%, code = midscale ±0.01 ±0.02 %/%
DYNAMIC CHARACTERISTICS
Bandwidth –3 dB BW_5K RAB = 5 kΩ, code = 0x40 1.2 MHz Total Harmonic Distortion THD VW Settling Time t Resistor Noise Voltage Density e
1
Typical specifications represent average readings at 25°C and VDD = 5 V.
2
Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic.
3
Code = 0x7F.
4
Resistor Terminal A and Resistor Terminal W have no limitations on polarity with respect to each other.
5
Guaranteed by design; not subject to production test.
6
P
is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.
DISS
7
VDD = 5 V.
5, 7
2
2
3
R-DNL R R-INL R ∆R
AB
R
WB
V
B, W
B
W
CM
IH
IL
IH
IL
IL
C
IL
DD RANGE
DD
P
DISS
WB
WB
–1.5 ±0.1 +1.5 LSB –4 ±0.75 +4 LSB
TA = 25°C –30 +30 %
Code = 0x00, VDD = 5 V 75 150 Ω
GND V
V
DD
f = 1 MHz, measured to GND, code = 0x40 45 pF f = 1 MHz, measured to GND, code = 0x40 60 pF 1 nA
VDD = 5 V 2.4 V VDD = 5 V 0.8 V VDD = 3 V 2.1 V VDD = 3 V 0.6 V VIN = 0 V or 5 V ±1 μA 5 pF
2.7 5.5 V VIH = 5 V or VIL = 0 V 3 8 μA VIH = 5 V or VIL = 0 V, VDD = 5 V 40 μW
W
S
N_WB
VA = 1 V rms, VB = 0 V, f = 1 kHz 0.05 % VA = 5 V, ±1 LSB error band 1 μs RWB = 2.5 kΩ, RS = 0 Ω 6 nV/√Hz
Rev. A | Page 3 of 16
AD5246
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ELECTRICAL CHARACTERISTICS—10 KΩ, 50 KΩ, 100 KΩ VERSIONS

VDD = 5 V ± 10% or 3 V ± 10%; VA = VDD; –40°C < TA < +125°C, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ
DC CHARACTERISTICS, RHEOSTAT MODE
Resistor Differential Nonlinearity Resistor Integral Nonlinearity Nominal Resistor Tolerance
2
2
3
R-DNL RWB, VA = no connect –1 ±0.1 +1 LSB R-INL RWB, VA = no connect –2 ±0.25 +2 LSB ∆R
AB
TA = 25°C –20 +20 % Resistance Temperature Coefficient (∆RAB/RAB)/∆T Wiper = no connect 45 ppm/°C R
WB
R
WB
Code=0x00, VDD = 5 V 75 150 Ω Code=0x00, VDD = 2.7 V 150 400 Ω
RESISTOR TERMINALS
Voltage Range Capacitance5 B C Capacitance5 W C Common-Mode Leakage I
4
V
B, W
B
W
CM
GND V
f = 1 MHz, measured to GND, code = 0x40 45 pF
f = 1 MHz, measured to GND, code = 0x40 60 pF
1 nA
DIGITAL INPUTS AND OUTPUTS
Input Logic High V Input Logic Low V Input Logic High V Input Logic Low V Input Current I Input Capacitance
5
IH
IL
IH
IL
IL
C
IL
VDD = 5 V 2.4 V
VDD = 5 V 0.8 V
VDD = 3 V 2.1 V
VDD = 3 V 0.6 V
VIN = 0 V or 5 V ±1 μA
5 pF
POWER SUPPLIES
Power Supply Range V Supply Current I Power Dissipation
6
DD RANGE
DD
P
DISS
2.7 5.5 V
VIH = 5 V or VIL = 0 V 3 8 μA
VIH = 5 V or VIL = 0 V, VDD = 5 V 40 μW Power Supply Sensitivity PSSR VDD = +5 V ± 10%, code = midscale ±0.01 ±0.02 %/%
DYNAMIC CHARACTERISTICS
5, 7
Bandwidth –3 dB BW RAB = 10 kΩ/50 kΩ/100 kΩ, code = 0x40 600/100/40 kHz Total Harmonic Distortion THD VW Settling Time (10 kΩ/50 kΩ/100 kΩ) t Resistor Noise Voltage Density e
1
Typical specifications represent average readings at 25°C and VDD = 5 V.
2
Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic.
3
Code = 0x7F.
4
Resistor Terminal A and Resistor Terminal W have no limitations on polarity with respect to each other.
5
Guaranteed by design; not subject to production test.
6
P
is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.
DISS
7
All dynamic characteristics use VDD = 5 V.
W
S
N_WB
VA = 1 V rms, f = 1 kHz, RAB = 10 kΩ 0.05 %
VA = 5 V ±1 LSB error band 2 μs
RWB = 5 kΩ, RS = 0 9 nV/√Hz
1
Max Unit
V
DD
Rev. A | Page 4 of 16
AD5246
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TIMING CHARACTERISTICS

VDD = 5 V ± 10% or 3 V ± 10%; VA = VDD; –40°C < TA < +125°C, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ1Max Unit
I2C INTERFACE TIMING CHARACTERISTICS
SCL Clock Frequency f t
Bus Free Time Between STOP and START t
BUF
t
Hold Time (Repeated START) t
HD;STA
t
Low Period of SCL Clock t
LOW
t
High Period of SCL Clock t
HIGH
t
Setup Time for Repeated START Condition t
SU;STA
t
Data Hold Time t
HD;DAT
t
Data Setup Time t
SU;DAT
tF Fall Time of Both SDA and SCL Signals t tR Rise Time of Both SDA and SCL Signals t t
Setup Time for STOP Condition t
SU;STO
1
Typical specifications represent average readings at 25°C and VDD = 5 V.
2
Guaranteed by design; not subject to production test.
3
See timing diagrams (Figure 26, Figure 27, and Figure 28) for locations of measured values.
4
Specifications apply to all parts.
2, , 3 4
SCL
1
2
400 kHz
1.3 μs After this period, the first clock pulse is
generated 0.6 μs
3
4
5
6
7
8
9
10
1.3 μs
0.6 50 μs
0.6 μs
0.9 μs 100 ns 300 ns 300 ns
0.6 μs
Rev. A | Page 5 of 16
AD5246
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ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted. Table 4.
Parameter Value
VDD to GND –0.3 V to +7 V VA, VW to GND V Terminal Current, A–B, A–W, B–W
Digital Inputs and Output Voltage to GND 0 V to VDD + 0.3 V Operating Temperature Range –40°C to +125°C Maximum Junction Temperature (T Storage Temperature –65°C to +150°C Lead Temperature (Soldering, 10 sec) 300°C Thermal Resistance3 θJA: SC70-6 340°C/W
1
Maximum terminal current is bounded by the maximum current handling of
2
Package power dissipation = (T
1
Pulsed Continuous ±5 mA
) 150°C
JMAX
the switches, maximum power dissipation of the package, and maximum applied voltage across any two of the A, B, and W terminals at a given resistance.
− TA)/θ
JMAX
JA.
DD
±20 mA
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. A | Page 6 of 16
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PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

V
1
DD
AD5246
2
GND
SCL
TOP VIEW
(Not to Scale)
3
Figure 2. Pin Configuration
B
6
5
W
SDA
4
03875-018
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
1 V
DD
Positive Power Supply. 2 GND Digital Ground. 3 SCL Serial Clock Input. Positive edge triggered. 4 SDA Serial Data Input/Output. 5 W W Terminal. 6 B B Terminal.
Rev. A | Page 7 of 16
AD5246
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TYPICAL PERFORMANCE CHARACTERISTICS

1.0
0.8
0.6
0.4
0.2
0
–0.2
–0.4
RHEOSTAT MODE INL (LSB)
RHEOSTAT MODE INL (LSB)
–0.6 –0.8
–1.0
16 32 48
0
Figure 3. R-INL vs. Code vs. Supply Voltages
0.5
0.4
0.3
0.2
0.1 0
–0.1
–0.2
–0.3
RHEOSTAT MODE DNL (LSB)
–0.4
–0.5
VDD = 2.7V
0
16 32 48 64 80 96 112 128
Figure 4. R-DNL vs. Code vs. Supply Voltages
1.0
0.8
TA = +85°C
0.6
0.4
0.2
0
–0.2
–0.4
RHEOSTAT MODE INL (LSB)
–0.6
–0.8 –1.0
16 32 48
0
Figure 5. R-INL vs. Code vs. Temperature
CODE (Decimal)
V
DD
CODE (Decimal)
TA = –40°C
TA = +25°C
CODE (Decimal)
VDD = 2.7V
V
= 5.5V
DD
64 80 96 112 128
= 5.5V
64 80 96 112 128
TA = +125°C
TA= 25
°
C
= 10kΩ
R
AB
TA = 25°
C
= 10kΩ
R
AB
TA = –40°
TA = +25°C TA = +85°C TA = +125°C
03875-020
03875-021
C
03875-022
0.5
–40°C
0.4
°
C
+25
°
C
+85
0.3
0.2
0.1
–0.1
–0.2
RHEOSTAT MODE DNL (LSB)
–0.3
–0.4
–0.5
+125
0
0
°
C
16 32 48
Figure 6. R-DNL vs. Code vs. Temperature
0
–0.5
–1.0
–1.5
–2.0
RHEOSTAT MODE INL (LSB)
FSE, FULL-SCALE ERROR (LSB)
–2.5
–3.0
–40
–25 –10 5 20 35 50 65 80
Figure 7. Full-Scale Error vs. Temperature
1.50
1.25
1.00
0.75
0.50
0.25
ZSE, ZERO-SCALE ERROR (LSB)
0
–40
–25 –10 5
Figure 8. Zero-Scale Error vs. Temperature
VDD = 2.7V
= 10kΩ
R
AB
TA = –40°
C, +25°C, +85°C, +125°C
64 80 96 112
CODE (Decimal)
VDD = 5.5V, VA = 5.5V
VDD = 2.7V, VA = 2.7V
TEMPERATURE (°
C)
95 110 125
VDD = 5.5V, VA = 5.5V
V
= 2.7V, VA = 2.7V
DD
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
03875-023
128
03875-024
03875-025
Rev. A | Page 8 of 16
AD5246
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100
10
1
SUPPLY CURRENT (μA)
0.1
DD,
I
0.01 –40
–25 –10
5 20 35 50 65 80 95 110 125
TEMPERATURE (°
Figure 9. Supply Current vs. Temperature
500
400
C)
RHEOSTAT MODE TEMPCO (ppm/°
300
200
100
–100
–200
–300 –400
–500
0
0
TA = –40°C to +85°C
TA = –40°C to +125°C
16 32 48
CODE (Decimal)
Figure 10. Rheostat Mode Tempco ∆R
0
–6
–12
–18
–24
–30
GAIN (dB)
–36
–42
–48
–54
–60
1k
0x40
0x20 0x10
0x08 0x04
0x02 0x01
10k
FREQUENCY (Hz)
Figure 11. Gain vs. Frequency vs. Code, R
DIGITAL INPUTS = 0V CODE = 0x40
VDD = 5.5V
VDD = 2.7V
C)
VDD = 2.7V
RAB = 10kΩ
64 80 96 112 128
/∆T vs. Code
WB
100k 1M 10M
= 5 kΩ
AB
03875-026
03875-027
03875-028
0
–6
–12
–18
–24
–30
GAIN (dB)
–36
–42
–48
–54
–60
1k
0x40
0x20
0x10 0x08 0x04 0x02
0x01
10k
FREQUENCY (Hz)
Figure 12. Gain vs. Frequency vs. Code, R
0
–6
–12
–18
–24
–30
GAIN (dB)
–36
–42
–48
–54
–60
1k
0x40
0x20
0x10 0x08
0x04 0x02 0x01
10k
FREQUENCY (Hz)
Figure 13. Gain vs. Frequency vs. Code, R
0
–6
–12
–18
–24
–30
GAIN (dB)
–36
–42
–48
–54
–60
1k
0x40
0x20 0x10
0x08
0x04
0x02
0x01
10k
FREQUENCY (Hz)
Figure 14. Gain vs. Frequency vs. Code, R
100k 1M 10M
= 10 kΩ
AB
100k 1M 10M
= 50 kΩ
AB
100k 1M 10M
= 100 kΩ
AB
03875-029
03875-030
03875-031
Rev. A | Page 9 of 16
AD5246
K
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0
–6
–12
–18
–24
–30
GAIN (dB)
–36
–42
–48
–54
–60
1k
0.30
0.25
0.20
0.15
(μA)
DD
I
0.10
0.05
0
1k
360
300
100kΩ
10k
100k 1M 10M
FREQUENCY (Hz)
Figure 15. –3 dB Bandwidth @ Code = 0x80
A - VDD = 5.5V CODE = 0x55
= 5.5V
B - V
DD
CODE = 0x7F
= 2.7V
C - V
DD
CODE = 0x55
= 2.7V
D - V
DD
CODE = 0x7F
10k 100k 1M
FREQUENCY (Hz)
Figure 16. I
vs. Frequency
DD
10kΩ
50kΩ
A
B
TA = 25°C R
AB
CODE = 0x00
5kΩ
TA= 25°C
C
D
= 50k
TA = 25°C
= 10kΩ
R
AB
F
= 100kHz
CLK
5V 0V
03875-006
03875-032
VDD = 5.5V V
= 0V
B
V
W
CL
1μs/DIV
Figure 18. Digital Feedthrough
03875-033
VDD = 5.5V V CODE 0x40 to 0x3F
V
W
= 0V
B
200ns/DIV
TA = 25°C
= 10kΩ
R
AB
03875-007
Figure 19. Midscale Glitch, Code 0x40 to 0x3F
Ω
VDD = 5.5V
= 0V
V
B
CODE 00
TO 7F
H
H
TA = 25°C
= 10k
R
AB
IW = 50μA
Ω
= 2.7V
V
240
)
Ω
(
180
WB
R
120
60
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
DD
Figure 17. R
WB
V
BIAS
vs. V
(V)
BIAS
vs. V
V
1
W
V
= 5.5V
DD
03875-008
DD
Figure 20. Large Signal Settling Time
Rev. A | Page 10 of 16
μ
s/DIV
40
03875-005
AD5246
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TEST CIRCUITS

Figure 21 to Figure 25 define the test conditions used in the product Specification tables.
DUT
W
B
igure 21. Test Circuit for Resistor Position Nonlinearity Error
F
(Rheostat Operation; R-INL, R-DNL)
DUT
V
DD
V+
F
igure 22. Test Circuit for Power Supply Sensitivity (PSS, PSSR)
W
B
I
W
V
MS
V+ = V
±
DD
PSRR (dB) = 20 LOG
PSS (%/%) =
V
MS
10%
ΔV ΔV
03875-004
%
MS
%
DD
ΔV
MS
( )
ΔV
DD
03875-009
0.1V
RSW=
I
DUT
B
W
I
SW
VDD TO GND
SW
CODE = 0x00
0.1V
03875-040
igure 24. Test Circuit for Incremental On Resistance
F
DUT
I
CM
W
B
V
CM
NO CONNECT
03875-012
F
igure 25. Test Circuit for Common-Mode Leakage Current
DUT
10kΩ
IN
B
2.5V
10kΩ
+15V
W
OP27
–15V
V
OUT
03875-010
igure 23. Test Circuit for Gain vs. Frequency
F
Rev. A | Page 11 of 16
AD5246
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I2C INTERFACE

Table 6. Write Mode
S 0 1 0 1 1 1 0 Slave Address Byte Data Byte
Table 7. Read Mode
S 0 1 0 1 1 1 0 R A 0 D6 D5 D4 D3 D2 D1 D0 A P Slave Address Byte Data Byte
A X D6 D5 D4 D3 D2 D1 D0 A P
W
S = Start Condition.
P = Stop Condition.
A = Acknowledge.
X = Don’t Care.
SCL
SDA
t
1
PS
START B
MASTER
t
8
t
2
t
3
t
9
t
8
Figure 26. I
SCL
0 1 0 1 1 1 0 R/W
SDA
FRAME 1
SLAVE ADDRESS BYTE
= Write.
W
R = Read.
D6, D5, D4, D3, D2, D1, D0 = Data Bits.
t
9
t
6
t
4
2
C Interface, Detailed Timing Diagram
Figure 27. Writing to the RDAC Register
t
7
119
XD6 D4D3D2D1D0
ACK BY AD5246
D5
DATA BYTE
t
5
S
FRAME 2
t
2
t
10
ACK BY AD5246
19
STOP BY
MASTER
03875-014
P
03875-019
1 919
SCL
0 D6D5D4D3D2D1D0
ACK BY AD5246
FRAME 2
RDAC REGISTER
START BY
MASTER
0 1 0 1 1 1 0 R/W
SDA
FRAME 1
SLAVE ADDRESS BYTE
Figure 28. Reading from the RDAC Register
Rev. A | Page 12 of 16
NO ACK BY MASTER
STOP BY MASTER
03875-013
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OPERATION

The AD5246 is a 128-position, digitally controlled variable resistor (VR) device.

PROGRAMMING THE VARIABLE RESISTOR

Rheostat Operation
The nominal resistance of the RDAC between Terminal A and Terminal B is available in 5 kΩ, 10 kΩ, 50 kΩ, and 100 kΩ. The final two or three digits of the part number determine the nominal resistance value, that is, 10 kΩ = 10, 50 kΩ = 50. The nominal resistance (R accessed by the wiper terminal. The 7-bit data in the RDAC latch is decoded to select one of the 128 possible settings.
The general equation determining the digitally programmed o
utput resistance between W and B is
) of the VR has 128 contact points
AB

I2C COMPATIBLE 2-WIRE SERIAL BUS

The first byte of the AD5246 is a slave address byte (see Tab l e 6
W
and Tabl e 7). It has a 7-bit slave address and an R/ seven MSBs of the slave address are 0101110 followed by 0 for a write command or 1 to place the device in read mode.
2
The 2-wire I
1. The mast
C serial bus protocol operates as follows:
er initiates data transfer by establishing a START condition, which is when a high-to-low transition on the SDA line occurs while SCL is high (see Figure 27). The fol
lowing byte is the slave address byte, which consists of
the 7-bit slave address followed by an R/
determines whether data will be read from or written to the slave device).
bit. The
bit (this bit
W
D
DR ×+×= 2
)(
128
(1)
RR
WABWB
where:
he decimal equivalent of the binary code loaded in the
D is t 7-bit RDAC register.
R
is the end-to-end resistance.
AB
R
is the wiper resistance contributed by the on resistance
W
of each internal switch.
Ax
D6 D5 D4 D3 D2 D1 D0
DECODER
Figure 29. AD5246 Equivalent RDAC Circuit
RDAC
LATCH
AND
R
S
R
S
R
S
Wx
Bx
03875-015
Note that in the zero-scale condition, there is a relatively small finite wiper resistance. Care should be taken to limit the current flow between W and B in this state to a maximum pulse current of no more than 20 mA. Otherwise, degradation or possible destruction of the internal switch contact can occur.
Typical device-to-device matching is process lot dependent and
y vary by up to ±30%. Since the resistance element is proc-
ma essed in thin-film technology, the temperature coefficient of R
is only 45 ppm/°C.
AB
The slave whose address corresponds to the transmitted addr
ess responds by pulling the SDA line low during the ninth clock pulse (this is termed the acknowledge bit). At this stage, all other devices on the bus remain idle while the selected device waits for data to be written to or read from its serial register. If the R/
bit is high, the master
W reads from the slave device. Conversely, if the R/
low, the master writes to the slave device.
n write mode, after acknowledgement of the slave address
2. I
byte, the next byte is the data byte. Data is transmitted over the serial bus in sequences of nine clock pulses (eight data bits followed by an acknowledge bit). The transitions on the SDA line must occur during the low period of SCL and remain stable during the high period of SCL (see
3. I
n read mode, after acknowledgment of the slave address byte, data is received over the serial bus in sequences of nine clock pulses (a slight difference from the write mode where eight data bits are followed by an acknowledge bit). Similarly, the transitions on the SDA line must occur during the low period of SCL and remain stable during the high period of SCL (see
hen all data bits have been read or written, a STOP
4. W
Figure 28).
condition is established by the master. A STOP condition is defined as a low-to-high transition on the SDA line while SCL is high. In write mode, the master pulls the SDA line high during the tenth clock pulse to establish a STOP condition (see
o Acknowledge for the ninth clock pulse (that is, the
a N
Figure 27). In read mode, the master issues
SDA line remains high). The master then brings the SDA line low before the tenth clock pulse, which goes high to establish a STOP condition (see
Figure 28).
bit is
W
Tabl e 6).
Rev. A | Page 13 of 16
AD5246
V
www.BDTIC.com/ADI
A repeated write function gives the user flexibility to update the RDAC output a number of times after addressing the part only once. For example, after the RDAC has acknowledged its slave address in write mode, the RDAC output updates on each succes­sive byte. If different instructions are needed, the write/read mode has to start again with a new slave address and data byte. Similarly, a repeated read function of the RDAC is also allowed.

LEVEL SHIFTING FOR BIDIRECTIONAL INTERFACE

While most legacy systems may be operated at one voltage, a new component may be optimized at another. When two systems operate the same signal at two different voltages, proper level shifting is needed. For instance, one can use a 1.8 V
2
E
PROM to interface with a 5 V digital potentiometer. A level shifting scheme is needed to enable a bidirectional communi­cation so that the setting of the digital potentiometer can be stored to and retrieved from the E
2
PROM. Figure 30 shows one of the implementations. M1 and M2 can be any N channel signal FETs, or if V
falls below 2.5 V, M1 and M2 can be low
DD
threshold FETs such as the FDV301N.
= 1.8V V
DD1
R
SDA1
SCL1
1.8V
R
P
P
G
S
D
M1
R
P
G
S
D
M2
E2PROM
Figure 30. Level Shifting for Operation at Different Potentials
R
AD5246
5V
=
DD2
P
SDA2
SCL2
5V
03875-011

ESD PROTECTION

All digital inputs are protected with a series input resistor and parallel Zener ESD structures, as shown in Figure 31.
pplies to the digital input pins SDA and SCL.
This a
340Ω
LOGIC
V
DD
B
W
03875-016
GND
Figure 32. Maximum Terminal Voltages Set by V
and GND
DD

MAXIMUM OPERATING CURRENT

At low code values, the user should be aware that due to low resistance values, the current through the RDAC may exceed the 5 mA limit. In Figure 33, a 5 V supply is placed on the
per, and the current through Terminal W and Terminal B is
wi plotted with respect to code. A line is also drawn denoting the 5 mA current limit. Note that at low code values (particularly for the 5 k and 10 k options), the current level increases significantly. Care should be taken to limit the current flow between W and B in this state to a maximum continuous current of 5 mA and a maximum pulse current of no more than 20 mA. Otherwise, degradation or possible destruction of the internal switch contacts can occur.
100
10
1
IWB CURRENT (mA)
0.1
0.01 0
16 32 48
Figure 33. Maximum Operating Current
5mA CURRENT LIMIT
RAB= 10k
RAB= 100k
64 80 96 112 128
CODE (Decimal)
R
AB
Ω
RAB= 50k
= 5k
Ω
Ω
Ω
03875-034
03875-002
GND
Figure 31. ESD Protection of Digital Pins

TERMINAL VOLTAGE OPERATING RANGE

The AD5246 VDD and GND power supply defines the boundary conditions for proper 3-terminal digital potentiometer operation. Supply signals present on Terminal B and Terminal W that exceed V
or GND are clamped by
DD

POWER-UP SEQUENCE

Since the ESD protection diodes limit the voltage compliance at Te r mi n al B an d Ter min al W (s ee Figure 32), it is important
power V
to and Terminal W; otherwise, the diode is forward biased such that V the user’s circuit. The ideal power-up sequence is in the follow­ing order: GND, V relative order of powering V is not important, providing they are powered after V
/GND before applying any voltage to Terminal B
DD
is powered unintentionally and may affect the rest of
DD
, digital inputs, and then VB/VBW. The
DD
the internal forward biased diodes (see Figure 32).
Rev. A | Page 14 of 16
B and V
B
and the digital inputs
W
/GND.
DD
AD5246
www.BDTIC.com/ADI

LAYOUT AND POWER SUPPLY BYPASSING

It is a good practice to use a compact, minimum lead-length layout design. The leads to the inputs should be as direct as possible with a minimum conductor length. Ground paths should have low resistance and low inductance.
Similarly, it is good practice to bypass the power supplies with qu
ality capacitors for optimum stability. Supply leads to the device should be bypassed with 0.01 µF to 0.1 µF disc or chip ceramic capacitors. Low ESR 1 µF to 10 µF tantalum or electrolytic capacitors should also be applied at the supplies to minimize any transient disturbance and low frequency ripple (see
Figure 34). Note that the digital ground should also be
j
oined remotely to the analog ground at one point to minimize
the ground bounce.
V
V
DD
+
C1
C3
Figure 34. Power Supply Bypassing
10μF
0.1μF
DD
AD5246
GND
03875-017

CONSTANT BIAS TO RETAIN RESISTANCE SETTING

For users who desire nonvolatility but cannot justify the addi­tional cost for the EEMEM, the AD5246 may be considered as a low cost alternative by maintaining a constant bias to retain the wiper setting. The AD5246 was designed specifically with low power in mind, which allows low power consumption even in battery-operated systems. The graph in
onstrates the power consumption from a 3.4 V 450 mA/hr
dem Li-ion cell phone battery, which is connected to the AD5246. The measurement over time shows that the device draws approximately 1.3 µA and consumes negligible power. Over a course of 30 days, the battery was depleted by less than 2%, the majority of which is due to the intrinsic leakage current of the battery itself.
Figure 35
110%
108%
106%
104%
102%
100%
98%
96%
BATTERY LIFE DEPLETED
94%
92%
90%
0
51015
DAYS
Figure 35. Battery Operating Life Depletion
TA= 25°
C
20 25 30
03875-035
This demonstrates that constantly biasing the pot is not an impractical approach. Most portable devices do not require the removal of batteries for the purpose of charging. Although the resistance setting of the AD5246 will be lost when the battery needs replacement, such events occur rather infrequently, so that this inconvenience is justified by the lower cost and smaller size offered by the AD5246. If and when total power is lost, the user should be provided with a means to adjust the setting accordingly.

EVALUATION BOARD

An evaluation board, along with all necessary software, is available to program the AD5246 from any PC running Windows® 98, Windows 2000, or Windows XP®. The graphical user interface, as shown in
asy to use. More detailed information is available in the user
e manual, which comes with the board.
Figure 36, is straightforward and
Figure 36. AD5246 Evaluation Board Software
Rev. A | Page 15 of 16
03875-041
AD5246
www.BDTIC.com/ADI

OUTLINE DIMENSIONS

2.20
2.00
1.80
2.40
0.30
0.15
4 5 6
3 2 1
0.65 BSC
2.10
1.80
1.10
0.80
SEATING PLANE
0.40
0.10
0.22
0.08
1.35
1.25
1.15
1.00
0.90
0.70
0.10 MAX
PIN 1
1.30 BSC
0.10 COPLANARITY
COMPLIANT TO JEDEC STANDARDS MO-203-AB
Figure 37. 6-Lead Thin Shrink Small Outline Transistor Package [SC70]
(K
S-6)
Dimensions shown in millimeters
0.46
0.36
0.26

ORDERING GUIDE

Model RAB (kΩ) Temperature Range Package Description Package Option Branding
AD5246BKS5-R2 5 –40°C to +125°C 6-lead SC70 KS-6 D16 AD5246BKS5-RL7 5 –40°C to +125°C 6-lead SC70 KS-6 D16 AD5246BKSZ5-RL7 AD5246BKS10-R2 10 –40°C to +125°C 6-lead SC70 KS-6 AD5246BKS10-RL7 10 –40°C to +125°C 6-lead SC70 KS-6 AD5246BKSZ10-RL7 10 –40°C to +125°C 6-lead SC70 KS-6 AD5246BKS50-R2 50 –40°C to +125°C 6-lead SC70 KS-6 D1C AD5246BKS50-RL7 50 –40°C to +125°C 6-lead SC70 KS-6 AD5246BKSZ50-RL7 50 –40°C to +125°C 6-lead SC70 KS-6 AD5246BKS100-R2 100 –40°C to +125°C 6-lead SC70 KS-6 D1A AD5246BKS100-RL7 100 –40°C to +125°C 6-lead SC70 KS-6 AD5246BKSZ100-R2 100 –40°C to +125°C 6-lead SC70 KS-6 AD5246BKSZ100-RL7 100 –40°C to +125°C 6-lead SC70 KS-6 D9D AD5246EVAL Evaluation Board
1
Z = Pb-free part.
2
The evaluation board is shipped with the 10 kΩ R resistor option; however, the board is compatible with all available resistor value options.
1
5 –40°C to +125°C 6-lead SC70 KS-6 D93
D1D D1D
1
D92
D1C
1
D94
D1A
1
1
2
AB
D9D
Purchase of licensed I2C components of Analog Devices or one of its sublicensed Associated Companies conveys a license for the purchaser under the Philips I2C Patent Rights to use these components in an I2C system, provided that the system conforms to the I2C Standard Specification as defined by Philips.
© 2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.
C03875–0–7/05(A)
Rev. A | Page 16 of 16
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