Alliance Semiconductor Corporation AS7C4096-12TI, AS7C4096-12TC, AS7C4096, AS7C4096-20TI, AS7C4096-20TC Datasheet

March 2001

5V/3.3V 512K × 8 CMOS SRAM

Features

• AS7C4096 (5V version)

• AS7C34096 (3.3V version)

• Industrial and commercial temperature

• Organization: 524,288 words × 8 bits

• Center power and ground pins

• High speed

- 10/12/15/20 ns address access time

- 5/6/7/8 ns output enable access time

• Low power consumption: ACTIVE

- 1375 mW (AS7C4096) / max @ 12 ns

- 468 mW (AS7C34096) / max @ 12 ns

®

• Low power consumption: STANDBY

- 110 mW (AS7C4096) / max CMOS

- 72 mW (AS7C34096) / max CMOS

• 2.0V data retention

• Equal access and cycle times

• Easy memory expansion with CE

, OE inputs

• TTL-compatible, three-state I/O

• JEDEC standard packages

- 400 mil 36-pin SOJ

- 400 mil 44-pin TSOP II

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA

AS7C4096

AS7C34096

Logic block diagram

V

CC

GND

Input buffer

A0
A1
A2
A3
A4
A5
A6
A7
A8

A9

Row decoder

Column decoder

A10

524,288 × 8

(4,194,304)

A11

Selection guide

Maximum address
access time

Maximum output
enable access time

Maximum operating
current

Maximum CMOS standby
current

Pin arrangement

36-pin SOJ (400 mil) 44-pin TSOPII(400 mil)

NC

1

NC

1

36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19

–15

NC
A18
A17
A16
A15
OE
I/O8
I/O7
GND

V

CC

I/O6
I/O5
A14
A13
A12
A11
A10
NC

A0
A1
A2
A3
A4

CE
I/O1
I/O2

V

GND
I/O3
I/O4

WE

A5
A6
A7
A8
A9

Array

A12

A0
A1
A2
A3
A4

I/O1

Sense amp

Control

Circuit

A13

A14

A15

A16

A17

A18

I/O8

WE
OE
CE

CE
/O1
/O2

V

ND
/O3
/O4

WE

A5
A6
A7
A8
A9

AS7C4096

AS7C34096

–10

AS7C34096

–12

2
3
4
5
6
7
8
9

CC

10
11
12
13
14
15
16
17
18

AS7C4096

AS7C34096

10 12 15 20 ns

56 7 9ns

AS7C4096 – 250 220 180 mA

AS7C34096 160 130 110 100 mA

AS7C4096 – 20 20 20 mA

AS7C34096 20 20 20 20 mA

2
3
4
5
6
7
8
9
10
11

CC

12
13
14
15
16
17
18
19
20

NC

21

NC

22

AS7C4096

AS7C34096

–20 Unit

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

NC
NC
NC

A18
A17

A16
A15
OE
I/O8
I/O7
GND

V

CC

I/O6
I/O5
A14
A13
A12
A11
A10
NC
NC
NC

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Copyright © Alliance Semiconductor. All rights reserved.

AS7C4096

AS7C34096

®

Functional description

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices
organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple
interfacing are desired.

Equal address access and cycle times (t
ideal for high-performance applications. The chip enable input CE
systems.

When CE

is high the device enters standby mode. The AS7C4096 is guaranteed not to exceed 110 mW power consumption in

CMOS standby mode. Both devices offer 2.0V data retention.

A write cycle is accomplished by asserting write enable (WE
on the rising edge of WE

(write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins

only after outputs have been disabled with output enable (OE

A read cycle is accomplished by asserting output enable (OE
I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write
enable is active, output drivers stay in high-impedance mode.

All chip inputs and outputs are TTL-compatible, and operation is from a single supply voltage. Both devices are available in the
industry standard 400-mil 36-pin SOJ and 44-pin TSOP II packages.

, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are

AA

permits easy memory expansion with multiple-bank memory

) and chip enable (CE). Data on the input pins I/O1–I/O8 is written

) or write enable (WE).

) and chip enable (CE), with write enable (WE) high. The chip drives

Absolute maximum ratings

Parameter Device Symbol Min Max Unit

Vol tag e o n V

relative to GND

CC

AS7C4096 V

AS7C34096 V
Voltage on any pin relative to GND V
Power dissipation P
Storage temperature (plastic) T
Te m p er a t u re w i t h V

applied T

CC

DC current unto output (low) I

NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.

t1

t1

t2

D

stg

bias

OUT

–1 +7.0 V –0.5 +5.0 V –0.5 VCC +0.5 V

–1.0W

–65 +150 °C –55 +125 °C

–20mA

Truth table

CE

HXX High Z Standby (I

LHH High Z Output disable (I
LHL D
LLX D

Key: X = Don’t care, L = Low, H = High

WE OE Data Mode

OUT

IN

Read (ICC)

Write (ICC)

, I

)

SB

SB1

)

CC

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Recommended operating condition

Parameter Device Symbol Min Nominal Max Unit

Supply voltage

Input voltage

Ambient operating
temperature

†

VIL min = –3.0V for pulse width less than tRC/2.

commercial T
industrial T

AS7C4096 V AS7C34096 V AS7C34096 V

(12/15/20) 4.5 5.0 5.5 V

CC

CC

(12/15/20) 3.0 3.3 3.6 V

CC

AS7C4096 V AS7C34096 V

AS7C4096

AS7C34096

®

(–10) 3.15 3.30 3.6 V

IH

IH

V

IL

A

A

2.2 – VCC + 0.5 V

2.0 – VCC + 0.5 V

†

–0.5

–0.8V

0– 70°C

–40 – 85 °C

DC operating characteristics (over the operating range)

Parameter Symbol Test conditions Device

Input leakage

current
Output

leakage
current

Operating

power supply

current

Standby

power supply

current

Output voltage

Capacitance (f = 1MHz, T

Input capacitance C
I/O capacitance C

|I

|VCC = Max, VIN = GND to V

|I

LI

= Max, CE = V

V

|

LO

I

CC

I

SB

CC

V

= GND to V

OUT

VCC = Max, CE < V

f = f

Max

, I

OUT

= 0mA

VCC = Max, CE = V
f = f

Max

, I

OUT

= 0mA

VCC = Max,

I

CE

≥ V

SB1

V

OL

V

OH

– 0.2V, V

CC

V

CC

IOL = 8 mA, VCC = Min – 0.4 – 0.4 – 0.4 – 0.4 V

IOH = –4 mA, VCC = Min 2.4 – 2.4 – 2.4 – 2.4 – V

= 25° C, V

a

≤ 0.2V or VIN ≥

IN

– 0.2V, f = 0

CC

CC

IH

CC

AS7C4096 – – – 250 – 220 – 180 mA

IL

AS7C34096 – 160 – 130 – 110 – 100

IH

AS7C4096 – – – 60 – 60 – 60

AS7C34096 – 60 – 60 – 60 – 60

AS7C4096 – – – 20 – 20 – 20

AS7C34096 – 20 – 20 – 20 – 20

= NOMINAL)2

Parameter Symbol Signals Test conditions Max Unit

IN

I/O

A, CE, WE, OE VIN = 0V 5 pF

1

–10 –12 –15 –20

–1–1–1–1µA

–1–1–1–1µA

I/O VIN = V

= 0V 7 pF

OUT

UnitMin Max Min Max Min Max Min Max

mA

mA

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