Zetex (Now Diodes) BCX51, BCX51-10, BCX51-16, BCX52, BCX52-10 Schematic [ru]

SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS

ISSUE 3 – FEBRUARY 1996 ✪

BCX51
BCX52
BCX53

COMPLEMENTARY TYPE – BCX51 – BCX54

BCX52 – BCX55

C

BCX53 – BCX56

PARTMARKING DETAILS –
BCX51 – AA BCX52 – AE BCX53 – AH

BCX51-10– AC BCX52-10– AG BCX53-10– AK
BCX51-16– AD BCX52-16– AM BCX53-16– AL

ABSOLUTE MAXIMUM RATINGS.

B

SOT89

E

C

PA RAMETER SYMBOL BCX51 BCX52 BCX53 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTER ISTI CS (at T

amb

CBO
CEO

EBO
CM
C

tot

j:Tstg

= 25°C unless otherwise stated).

-45 -60 -100 V

-45 -60 -80 V

-5 V

-1.5 A

-1 A
1W

-65 to +150 °C

PARAMETER SYMBOL MIN. TYP . MAX. UNIT CONDITIONS.
Collector-Base BCX53

Breakdown BCX52
Voltage BCX51

Collector-Emitter BCX53
Breakdown BCX52
Voltage BCX51

Emitter-Base
Breakdown Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I
Collector-Emitter

Saturation Voltage
Base-Emitter

Turn-On Voltage
Static Forward Current

Transfer Ratio

Transition Frequency f

Output Capacitance C

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(on)

h

FE

-10

-16

T

obo

-100

-60

-45

-80

-60

-45

-5 V

V
V
V

VIC =-10mA*

-0.1

µA

-20

µA

I

=-100µA

C

I

=-100µA

C

I

=-100µA

C

I

=-10mA*

C

I

=-10mA*

C

I

=-10µA

E

VCB =-30V
V

=-30V, T

CB

amb

=150°C

-20 nA VEB =-4V

-0.5 V IC =-500mA, IB =-50mA*

-1.0 V IC =-500mA, VCE =-2V*

25
40
25
63
100

250
160

250

=-5mA, VCE =-2V*

I

C

I

=-150mA, VCE =-2V*

C

I

=-500mA, VCE =-2V*

C

I

=-150mA, VCE =-2V*

C

I

=-150mA, VCE =-2V*

C

150 MHz IC =-50mA, VCE =-10V,

f=100MHz

25 pF VCB =-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

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