WTE KBJ8M, KBJ8K, KBJ8J, KBJ8G, KBJ8D Datasheet

				WTE	KBJ8A – KBJ8M
			POWER SEMICONDUCTORS		8.0A BRIDGE RECTIFIER

Features

!Diffused Junction

!

Low Forward Voltage Drop

A

!

High Current Capability

G

KBJ-6

!

High Reliability

Dim

Min

Max

!

High Surge Current Capability

B

A

29.7

30.3

!

Ideal for Printed Circuit Boards

C

+

~

~ -

B

19.7

20.3

H

K

D

C

4.7

4.9

D

17.0

18.0

J

E

E

3.8

4.2

Mechanical Data

P

R

R

G

3.1Ø

3.4Ø

H

2.3

2.7

!

Case: Molded Plastic

J

0.9

1.1

!

Terminals: Plated Leads Solderable per

M

K

2.0

2.4

MIL-STD-202, Method 208

N

L

0.6

0.7

!

Polarity: As Marked on Body

M

4.4

4.8

!

Weight: 4.0 grams (approx.)

N

3.4

—

!

Mounting Position: Any

S

P

9.8

10.2

!

Marking: Type Number

G

T

R

7.3

7.7

S

10.8

11.2

T

2.6

—

L

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

KBJ8A

KBJ8B

KBJ8D

KBJ8G

KBJ8J

KBJ8K

KBJ8M

Unit

Peak Repetitive Reverse Voltage

VRRM

Working Peak Reverse Voltage

VRWM

50

100

200

400

600

800

1000

V

DC Blocking Voltage

VR

RMS Reverse Voltage

VR(RMS)

35

70

140

280

420

560

700

V

Average Rectified Output Current

@TC = 75°C

IO

8.0

A

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

IFSM

200

A

rated load (JEDEC Method)

Forward Voltage (per element)

@IF = 8.0A

VFM

1.1

V

Peak Reverse Current

@TA = 25°C

IR

10

µA

At Rated DC Blocking Voltage

@TC = 100°C

200

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Note: 1. Device mounted on 7.5 x 7.5 x 0.8cm thick AL plate heatsink.

KBJ8A – KBJ8M

1 of 3

© 2002 Won-Top Electronics