TOSHIBA 1SV322 Technical data

TOSHIBA Diode Silicon Epitaxial Planar Type

1SV322

1SV322

TCXO/VCO

· High capacitance ratio: C

· Low series resistance: r

· Useful for small size tuner.

Maximum Ratings

Characteristics Symbol Rating Unit

Reverse voltage VR 10 V

Junction temperature T

Storage temperature range T

1 V/C4 V

= 0.4 Ω (typ.)

s

(Ta ==== 25°C)

Electrical Characteristics

= 4.3 (typ.)

j

stg

(Ta ==== 25°C)

125 °C

-55~125 °C

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 1-1E1A

Weight: 0.004 g (typ.)

Characteristics Symbol Test Condition Min Typ. Max Unit

Reverse voltage V

Reverse current IR VR = 10 V ¾ ¾ 3 nA

Capacitance C

Capacitance C

Capacitance ratio C

Series resistance rs V

Note: Signal level when capacitance is measured: Vsig = 500 mVrms

Marking

R

1 V

4 V

1 V/C4 V

IR = 1 mA 10 ¾ ¾ V

VR = 1 V, f = 1 MHz 26.5 ¾ 29.5 pF

VR = 4 V, f = 1 MHz 6.0 ¾ 7.1 pF

¾ 4.0 4.3 ¾ ¾

= 4 V, f = 100 MHz ¾ 0.4 0.8 W

R

1

2003-03-24

1SV322

2

2003-03-24