Datasheet 1T412 Datasheet (Sony)

Variable Capacitance Diode

Description

The 1T412 is a variable capacitance diode
designed for electronic tuning of BS tuners using a
super-small-miniature flat package (SSVC).

Features

• Super-small-miniature flat package

• Low series resistance: 1.8 Ω Max. (f=470 MHz)

• Large capacitance ratio: 5.7 Typ. (C2/C25)

• Small leakage current: 10 nA Max. (VR=28 V)

• Capacitance deviation in a matching group:

within 5 %

Applications

Electronic tuning of BS tuners

1T412

M-290

Absolute Maximum Ratings (Ta=25 °C)

• Reverse voltage VR 30 V

• Peak reverse voltage VRM 35 V

(RL ≥ 10 kΩ)

• Operating temperature Topr –20 to +75 °C

• Storage temperature Tstg –65 to +150 °C

Structure

Silicon epitaxial planar type diode

Electrical Characteristics (Ta=25 °C)

Item
Reverse current
Diode capacitance
Capacitance ratio

Series resistance
Capacitance
deviation in a
matching group

Symbol

IR

C2

C25

C2/C25

rs

∆C

Conditions

VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz

VR=1V, f=470 MHz

VR=2 to 25 V, f=1 MHz

Min.

3.27

0.57

5.0

Typ.

5.7

1.1

Max.

10

4.51

0.77

1.8

5

Unit

nA
pF
pF

Ω

%

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

—1—

E96147A67-TE

1T412

Diode capacitance vs. Reverse voltage

10

5

2

1

0.5

C-Diode capacitance (pF)

0.2

0.1
12 51020 50

V

R-Reverse voltage (V)

Ta=25°C

Reverse current vs. Ambient temperature

100

10

-Reverse current (pA)

R

I

1

VR=28V

0.90

Forward voltage vs. Ambient temperature

0.80

0.70

-Forward voltage (V)

F

V

0.60
–20 0 20 40 60 80

Ta-Ambient temperature (°C)

IF=1mA

0.1
–20 0 20 40 60 80

Ta-Ambient temperature (°C)

Reverse voltage vs. Ambient temperature

45

40

35

-Reverse voltage (V)

R

V

30

–20 0 20 40 60 80

Ta-Ambient temperature (°C)

IR=10µA

—2—

1.03

1T412

Diode capacitance vs. Ambient temperature

VR=1V

1.02

1.01

1.00

0.99

C (Ta)/C (25°C)-Diode capacitance

0.98
–20020406080

Ta-Ambient temperature (°C)

Reverse current vs. Reverse voltage

100

Ta=80°C

V

R=2V

VR=7V

R=25V

V

R=15V

V

1000

500

Temperature coefficient of diode capacitance

10

Ta=60°C

-Reverse current (pA)

R

I

1

0.1
1 3 10 30

R-Reverse voltage (V)

V

Ta=25°C

200

100

Temperature coefficient (ppm/°C)

50

12 510

R-Reverse voltage (V)

V

20 50

—3—

Package Outline Unit : mm

0.8}0. 1

1T412

M-290

A
M

0.2

A

1.3}0. 1

1.7}0. 1

10K M AX

0.2}0. 05

Mark

SO NY CO DE

EIAJ CODE

JEDEC CODE

10K M AX

b

c

b

M-290

0.7}0. 1

PACKAG E MATERIAL

LEAD TREATM ENT

LEAD MATERIAL

PACKAG E WEIGHT

c

BASE METAL

0.11}0. 005

0.3}0. 025

EPO XY RESIN

SO LDER PLATING

CO PPER

0.002g

WITH PLATING

{0. 05

0.11

|0. 01

{0. 05

0.3

|0. 02

1 : Cathode

1

X2

2

2 : Anode

—4—