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E96144A98-TE
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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 15 V
• Operating temperature Topr –35 to +85 °C
• Storage temperature Tstg –65 to +150 °C
Description
The 1T409 is a variable capacitance diode
designed for UHF-band VCO using a super-smallminiature flat package (SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 0.4 Ω Max. (f=470 MHz)
• Large capacitance ratio: 2.5 Typ. (C2/C10)
• Small leakage current: 3 nA Max. (VR=15 V)
Applications
• UHF-band VCO
• Local oscillator for cordless telephone
• Local oscillator for cellular equipment
Structure
Silicon epitaxial planar type diode
Variable Capacitance Diode
M-290
1T409
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
Symbol
IR
C2
C10
C2/C10
rs
Conditions
VR=15 V
VR=2 V, f=1 MHz
VR=10 V, f=1 MHz
VR=5V, f=470 MHz
Min.
14.26
5.46
2.2
Typ.
2.5
0.3
Max.
3
15.96
6.46
0.4
Unit
nA
pF
pF
Ω
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1T409
1 2 5 10 20 50
1
2
5
10
20
50
100
Diode capacitance vs. Reverse voltage
V
R-Reverse voltage (V)
C-Diode capacitance (pF)
Ta=25°C
1
10
Reverse current vs. Ambient temperature
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
I
R
-Reverse current (pA)
0.1
0.70
0.90
Forward voltage vs. Ambient temperature
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
V
F
-Forward voltage (V)
IF=1mA
0.80
0.60
25
35
Reverse voltage vs. Ambient temperature
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
V
R
-Reverse voltage (V)
30
20
VR=15V
I
R=10µA
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1T409
–20 0 20 40 60 80
0.98
0.99
1.00
1.01
1.02
1.03
Diode capacitance vs. Ambient temperature
Ta-Ambient temperature (°C)
C (Ta)/C (25°C)-Diode capacitance
1
100
Reverse current vs. Reverse voltage
1 3 10 30
V
R-Reverse voltage (V)
I
R
-Reverse current (pA)
10
0.1
VR=1V
V
R=2V
V
R=7V
VR=10V
1000
Temperature coefficient of diode capacitance
1 2 5 10
V
R-Reverse voltage (V)
Temperature coefficient (ppm/°C)
50
20 50
500
200
100
Ta=80°C
Ta=60°C
Ta=25°C
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SO NY CO D E
EIAJ CO D E
JEDEC CO D E
PACKAG E M ATERIAL
LEAD TR EATM ENT
LEAD M ATER IAL
PACKAG E W EIGHT
EPO XY RESIN
SO LDER PLATIN G
CO PPER
b
1.7 }0.1
10 KM AX
c
0.8 }0.1
10 KM AX
0.7 }0.1
c
b
0.11 }0.005
0.3 }0.025
BASE M ETAL
0.11
|0.01
0.3
|0.02
W ITH PLATING
{0.05
{0.05
M -290
0.2 }0.05
0.002g
M -290
1.3 }0.1
M
A
0.2
A
Package Outline Unit : mm
1T409
—4—
Mark
S9
1
2
1 : Cathode
2 : Anode
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