Datasheet 1T411 Datasheet (Sony)

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E95304B83-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 30 V
• Peak reverse voltage VRM 35 V
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Description
The 1T411 is a variable capacitance diode designed for analog cellular phone and it has a super miniature package.
Features
• Super miniature package
• Small series resistance 0.40 Ω Max. (f=470 MHz)
• Large capacitance ratio 6.5 Typ. (C2/C25)
• Capacitance deviation in a matching group
3 % (max.)
Structure
Silicon epitaxial planar-type diode
Variable Capacitance Diode
M-235
1T411
Electrical Characteristics (Ta=25 °C)
Item
Reverse current Diode capacitance Capacitance ratio
Series resistance Capacitance deviation in a matching group
Symbol
IR
C2
C25
C2/C25
rs
∆C
Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz f=1 MHz CD=14 pF, f=470 MHz
VR=2 to 25 V, f=1 MHz
Min. Typ. Max. Unit
20 nA
26.37 29.50 33.05 pF
4.030 4.400 4.807 pF
6.5
0.35 0.40 Ω 3%
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1T411
Reverse current vs. Ambient temperature
Forward voltage vs. Ambient temperature
Diode capacitance vs. Reverse voltage
V
R-Reverse voltage (V)
100
50
20
10
5
2
1
C-Diode capacitance (pF)
1 2 5 10 20 50
Ta=25°C
VR=28V
1.000
0.100
0.010
0.001
I
R
-Reverse current (nA)
Ta-Ambient temperature (°C)
20 40 60 80–20 0
IF=1mA
Ta-Ambient temperature (°C)
806040200–20
0.80
0.70
0.60
0.50
V
F
-Forward voltage (V)
Reverse voltage vs. Ambient temperature
IR=10µA
Ta-Ambient temperature (°C)
806040200–20
40
35
30
25
V
R
-Reverse voltage (V)
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1T411
1.03
1.02
1.01
1.00
0.99
0.98
C (Ta) /C (25°C) -Diode capacitance
Diode capacitance vs. Ambient temperature
V
R=1V
V
R=2V
V
R=7V
V
R=25V
V
R=15V
Reverse current vs. Reverse voltage
Thermal coefficient of diode capacitance
Thermal coefficient of diode capacitance (ppm/°C)
VR-Reverse voltage (V)
Ta-Ambient temperature (°C)
–20 0 20 40 60 80
Ta=80°C
1.000
0.100
0.010
0.001
I
R
-Reverse current (nA)
Ta=60°C
Ta=25°C
V
R-Reverse voltage (V)
502010521
1000
500
200
100
50
502010521
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Package Outline Unit : mm
AAA
M-235
AAA
1T411
∗1.25
2
1
+ 0.2 – 0.1
0.3
0.3
+ 0.1 – 0.05
∗0.9 ± 0.1
+ 0.1 – 0.05
2.5 ± 0.2
∗1.7 ± 0.1
NOTE: Dimension “∗” does not include mold protrusion.
0.2
0.11
+ 0.1 – 0.06
0 ± 0.05
0° to 10°
Marking
SONY CODE EIAJ CODE
JEDEC CODE
M-235
CATHODE MARK
2
11
B
1
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PACKAGE WEIGHT
Notes
1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.)
0.1g
1 to 9(for Jan.to Sept.)
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