Datasheet 1T402 Datasheet (Sony)

Variable Capacitance Diode

Description

The 1T402 is a variable capacitance diode
designed for electronic tuning of UHF TV tuners
using a super-small-miniature flat package (SSVC).

Features

• Super-small-miniature flat package

• Low series resistance: 0.65 Ω Max. (f=470 MHz)

• Large capacitance ratio: 6.5 Typ. (C2/C25)

• Small leakage current: 10 nA Max. (VR=28 V)

• Capacitance deviation in a matching group:

within 2 %

Applications

Electronic tuning of TV and CATV tuners

1T402

M-290

Absolute Maximum Ratings (Ta=25 °C)

• Reverse voltage VR 30 V

• Peak reverse voltage VRM 35 V

(RL≥10 kΩ)

• Operating temperature Topr –20 to +75 °C

• Storage temperature Tstg –65 to +150 °C

Structure

Silicon epitaxial planar type diode

Electrical Characteristics (Ta=25 °C)

Item
Reverse current
Diode capacitance
Capacitance ratio

Series resistance
Capacitance
deviation in a
matching group

Symbol

IR

C2

C25

C2/C25

rs

∆C

Conditions

VR=28 V
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz

CD=14 pF, f=470 MHz

VR=2 to 25 V, f=1 MHz

Min.

13.97

2.06

Typ.

6.5

0.57

Max.

10

16.29

2.35

0.65

2

Unit

nA
pF
pF

Ω

%

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

—1—

E95915-TE

1T402

Diode capacitance vs. Reverse voltage

100

50

20

10

5

C-Diode capacitance (pF)

2

1

12 51020 50

R-Reverse voltage (V)

V

Ta=25°C

Reverse current vs. Ambient temperature

VR=28V

100

10

-Reverse current (pA)

R

I

1

–20 0 20 40 60 80

Ta-Ambient temperature (°C)

0.80

Forward voltage vs. Ambient temperature

0.70

0.60

-Forward voltage (V)

F

V

0.50
–20 0 20 40 60 80

Ta-Ambient temperature (°C)

IF=1mA

45

Reverse voltage vs. Ambient temperature

40

35

-Reverse voltage (V)

R

V

30

–20 0 20 40 60 80

Ta-Ambient temperature (°C)

IR=10µA

—2—

1.03

1T402

Diode capacitance vs. Ambient temperature

VR=1V

1.02

1.01

1.00

0.99

C (Ta)/C (25°C)-Diode capacitance

0.98
–20 0 20 40 60 80

Ta-Ambient temperature (°C)

Reverse current vs. Reverse voltage

100

R=2V

V

R=7V

V
VR=25V

R=14V

V

Temperature coefficient of diode capacitance

1000

Ta=80°C

10

Ta=60°C

-Reverse current (pA)

R

I

1

0.1
1 3 10 30

R-Reverse voltage (V)

V

Ta=25°C

500

200

100

Temperature coefficient (ppm/°C)

50

12 510

R-Reverse voltage (V)

V

20 50

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Package Outline Unit : mm

0.8 ± 0.1

1.3 ± 0.1

1T402

M-290

A
M

0.2

A

1.7 ± 0.1

10° MAX

0.2 ± 0.05

SONY CODE
EIAJ CODE
JEDEC CODE

10° MAX

b

c
b

M-290

0.7 ± 0.1

PACKAGE MATERIAL

LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT

c

BASE METAL

0.11 ± 0.005

0.3 ± 0.025

EPOXY RESIN
SOLDER PLATING
COPPER

0.002g

WITH PLATING

+ 0.05

0.11

–

0.01

+ 0.05

0.3

– 0.02

Mark

1 : Cathode

12

S2

2 : Anode

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