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Variable Capacitance Diode
Description
The 1T405A is a variable capacitance diode
designed for electronic tuning of wide-band CATV
tuners using a super-small-miniature flat package
(SSVC).
High capacitance ratio (C25/C28) is improved to
support guard band.
Features
• Super-small-miniature flat package
• Low series resistance 0.85 Ω Max. (f=470 MHz)
• Large capacitance ratio 12.5 Typ. (C2/C25)
1.03 Min. (C25/C28)
• Small leakage current 10 nA Max. (VR=28 V)
• Capacitance deviation within 2 %
1T405A
M-290
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage VR 34 V
• Operating temperature Topr –20 to +75 °C
• Storage temperature Tstg –65 to +150 °C
Applications
Electronic tuning of VHF band and wide-band
CATV tuners
Structure
Silicon epitaxial planar type diode
Electrical Characteristics (Ta=25 °C)
Item
Reverse current
Reverse voltage
Diode capacitance
Capacitance ratio
Series resistance
Capacitance
deviation in a
matching group
Symbol
IR
VR
C2
C25
C2/C25
C25/C28
rs
∆C
Conditions
VR=28 V
IR=1 µA
VR=2 V, f=1 MHz
VR=25 V, f=1 MHz
CD=14 pF, f=470 MHz
VR=2 to 25 V, f=1 MHz
Min.
34
32.96
2.53
12.0
1.03
The continuous 20 pieces of ∆C are guaranteed.
Typ.
12.5
Max.
10
38.96
2.96
0.85
2
Unit
nA
V
pF
pF
Ω
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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E97109-TE
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1T405A
100
Diode capacitance vs. Reverse voltage
50
20
10
5
C-Diode capacitance (pF)
2
1
12 5 1020 50
V
R-Reverse voltage (V)
Reverse current vs. Ambient temperature
1000
Ta=25°C, f=1MHz VR=28V
100
-Reverse current (pA)
R
I
100
10
1
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
10000.00
Reverse current vs. Reverse voltage
1000.00
Ta=80°C
100.00
Ta=60°C
-Reverse current (pA)
R
I
10.00
Ta=25°C
1.00
1 10 100
VR-Reverse voltage (V)
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1T405A
Forward voltage vs. Ambient temperature
0.80
0.70
-Forward voltage (V)
0.60
F
V
0.50
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
Diode capacitance vs. Ambient temperature
1.04
1.03
1.02
1.01
1.00
Reverse voltage vs. Ambient temperature
45
IF=1mA IR=10µA
35
-Reverse voltage (V)
R
V
30
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
Thermal coefficient of diode capacitance
1000
f=1MHz
f=1MHz
VR=1V
R=2V
V
R=7V
V
VR=15V
V
R=25V
100
0.99
0.98
C (Ta) / C (25°C)-Diode capacitance
0.97
–20 0 20 40 60 80
Ta-Ambient temperature (°C)
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Thermal coefficient (ppm/°C)
10
110
V
R-Reverse voltage (V)
100
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Package Outline Unit : mm
0.8 ± 0.1
1.3 ± 0.1
1T405A
M-290
A
M
0.2
A
1.7 ± 0.1
10° MAX
0.2 ± 0.05
MARK
SONY CODE
EIAJ CODE
JEDEC CODE
10° MAX
b
c
b
M-290
0.7 ± 0.1
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
PACKAGE WEIGHT
c
BASE METAL
0.11 ± 0.005
0.3 ± 0.025
EPOXY RESIN
SOLDER PLATING
COPPER
0.002g
WITH PLATING
+ 0.05
0.11
–
0.01
+ 0.05
0.3
– 0.02
1 : Cathode
1
S5
2
2 : Anode
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