TEXAS INSTRUMENTS XTR117 Technical data

SBOS344B − SEPTEMBER 2005 − REVISED JANUARY 2006
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
4-20mA Current-Loop Transmitter
XTR117
FEATURES
D LOW QUIESCENT CURRENT: 130µA D 5V REGULATOR FOR EXTERNAL CIRCUITS D LOW SPAN ERROR: 0.05% D LOW NONLINEARITY ERROR: 0.003% D WIDE-LOOP SUPPLY RANGE: 7.5V to 40V D MSOP-8 AND DFN-8 PACKAGES
APPLICATIONS
TRANSMITTER
D SMART TRANSMITTER D INDUSTRIAL PROCESS CONTROL D TEST SYSTEMS D CURRENT AMPLIFIER D VOLTAGE-TO-CURRENT AMPLIFIER
DESCRIPTION
The XTR1 17 i s a p recision current o utput c onverter d esigned to transmit analog 4-20mA s ignals over a n industry-standard current loop. It provides accurate current scaling and output current limit functions.
The on-chip vol tage regulator (5V) can be us ed to power external circuitry. A current return pin (I current used in external circuitry to assure an accurate control of the output current.
The XTR117 is a fundamental building block of smart sensors using 4-20mA current transmission. The XTR117 is specified for operation over the extended industrial temperature range, −40°C to +125°C.
RELATED 4-20mA PRODUCTS
XTR115 5V regulator output and 2.5V reference output XTR116 5V regulator output and 4.096V reference output
NOTE:For 4-20mA complete bridge and RTO conditioner solutions,
see the XTR product family website at www.ti.com.
) senses any
RET
XTR117
V
REG
8
R
IN
I
IN
2
V
IN
I
RET
3
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
                      !     !   
R
1
2.475k
A1
+5V
Regulator
www.ti.com
R 25
R
2
LIM
V+
7
B
6
E
5
IO= 100 V
4
Q1
R
IN
I
O
V
LOOP
R
L
IN
Copyright 2005−2006, Texas Instruments Incorporated
"##$
XTR117
MSOP-8
DGK
BOZ
XTR117
DFN-8
DRB
BOY
SBOS344B − SEPTEMBER 2005 − REVISED JANUARY 2006
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ABSOLUTE MAXIMUM RATINGS
(1)
Power Supply, V+ (referenced to IO pin) +50V. . . . . . . . . . . . . . . .
Input Voltage, (referenced to I
pin) 0V to V+. . . . . . . . . . . . . . . .
RET
Output Current Limit Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
, Short-Circuit Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
REG
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe
proper handling and installation procedures can cause damage.
Operating Temperature Range −55°C to +125°C. . . . . . . . . . . . . . .
Storage Temperature Range −55°C to +125°C. . . . . . . . . . . . . . . . .
Junction Temperature +165°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD Rating (Human Body Model) 2000V. . . . . . . . . . . . . . . . . . . . . . .
(Charged Device Model) 1000V. . . . . . . . . . . . . . . . .
(1)
Stresses above these ratings may cause permanent damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible t o damage because very small parametric changes could cause the device not to meet its published specifications.
Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only , an d functional operation of the device at these or any other conditions beyond those specified is not implied.
PACKAGE/ORDERING INFORMATION
(1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI web site at www .ti.com.
PIN ASSIGNMENTS
Top View
NC
I
RET
XTR117 XTR117
(1)
1
I
2
IN
3
I
4
O
NOTES: (1) NC = No connection. Leave unconnected on PCB.
(2)Connect thermaldie padto I
8
7
6
5
V
REG
V+
B(Base)
E(Emitter)
RET
(1)
1
NC
I
IN
I
RET
I
O
or leave unconnected on PCB.
2
3
4
Exposed
Thermal Die Pad
on
Underside
DFN−8MSOP−8
8
V
REG
V+
7
B(Base)
6
(2)
E (Emitter)
5
2
"##$
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SBOS344B − SEPTEMBER 2005 − REVISED JANUARY 2006
ELECTRICAL CHARACTERISTICS: V+ = +24V
Boldface limits apply over the temperature range, TA = −40°C to +125°C.
All specifications at TA = +25°C, V+ = 24V, RIN = 20k, and TIP29C external transistor, unless otherwise noted.
PARAMETER CONDITION
MIN TYP MAX
OUTPUT
Output Current Equation I
O
Output Current, Linear Range 0.20 25 mA
Over-Scale Limit I Under-Scale Limit I
LIM MIN
I
= 0 0.13 0.20 mA
REG
SPAN
Span (Current Gain) S 100 A/A
(1)
Error
IO = 200µA to 25mA ±0.05 ±0.4 %
vs Temperature TA = −40°C to +125°C ±3 ±20 ppm/°C
Nonlinearity IO = 200µA to 25mA ±0.003 ±0.02 %
INPUT
Offset Voltage (Op Amp) V
OS
IIN = 40µA ±100 ±500 µV
vs Temperature TA = −40°C to +125°C ±0.7 ±6 µV/°C
vs Supply Voltage, V+ V+ = 7.5V to 40V +0.1 +2 µV/V
Bias Current I
B
vs Temperature TA = −40°C to +125°C 150 pA/°C
Noise: 0.1Hz to 10Hz e
n
DYNAMIC RESPONSE
Small-Signal Bandwidth C
= 0, RL = 0 380 kHz
LOOP
Slew Rate 3.2 mA/µs
(2)
V
REG
Voltage 5 V Voltage Accuracy I
= 0 ±0.05 ±0.1 V
REG
vs Temperature TA = −40°C to +125°C ±0.1 mV/°C
vs Supply Voltage, V+ V+ = 7.5V to 40V 1 mV/V vs Output Current See Typical Characteristics
Short-Circuit Current 12 mA
POWER SUPPL Y
Specified Voltage Range V+ +24 V Operating Voltage Range +7.5 +40 V Quiescent Current I
Q
Over Temperature TA = −40°C to +125°C 250 µA
TEMPERATURE RANGE
Specified Range −40 +125 °C Operating Range −55 +125 °C Storage Range −55 +150 °C Thermal Resistance q
JA
MSOP 150 °C/W DFN 53 °C/W
(1)
Does not include initial error or temperature coefficient of R
(2)
Voltage measured with respect to I
RET
pin.
.
IN
XTR117
I
= I
x 100
O
IN
32 mA
−35 nA
0.6 µV
130 200 µA
UNITS
PP
3
"##$
SBOS344B − SEPTEMBER 2005 − REVISED JANUARY 2006
TYPICAL CHARACTERISTICS: V+ = +2.7V to +5.5V
At TA = +25°C, V+ = 24V, RIN = 20k, and TIP29C external transistor, unless otherwise noted.
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45
CURRENT GAIN vs FREQUENCY
40
30
Gain (dB)
20
10
10k 100k
OVER−SCALE CURRENT vs TEMPERATURE
34
With External Transistor
33
32
V+ = 36V
31
30
Over−Scale Current (mA)
29
V+ = 24V
28
−75−
50−250 255075100
C
OUT
R
Frequency (Hz)
V+ = 7.5V
Temperature (_C)
=250
L
= 10nF
180
QUIESCENT CURRENT vs TEMPERATURE
170 160
A)
µ
150
C
=0
OUT
=0
R
L
140 130 120 110
Quiescent Current (
100
90
V+=36V
V+ = 24V
V+ = 7.5V
80
1M
−75−
50−250255075100
125
Temperature (_C)
VOLTAGEvs V
V
−55_
REG
C
Sourcing
Current
5.5 +125_C
5.0
Voltage (V)
+25_C
REG
V
Sinking Current
CURRENT
REG
+25_C
−55_
+125_C
C
4.5
125
101 2 3
Current (mA)
I
REG
4
SPAN ERROR vs TEMPERATURE
OFFSET VOLTAGE DISTRIBUTION
50 40 30 20 10
0
Population
500−450−400−350−300−250−200−150−100
0
50
50
100
Offset Voltage (µV)
150
200
250
300
350
400
450
500
Span Error (m%)
10
20
30
40
50
−75−
50−250255075100
Temperature(_C)
125
4
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SBOS344B − SEPTEMBER 2005 − REVISED JANUARY 2006
APPLICATIONS INFORMATION
BASIC OPERATION
The XTR117 is a precision current output converter designed to transmit analog 4-20mA signals over an industry-standard current loop. Figure 1 shows basic circuit connections with representative simplified input circuitry. The XTR117 is a two-wire current transmitter. Its input current (pin 2) controls the output current. A portion of the output current flows into the V+ power supply, pin 7. The remaining current flows in Q1. External input circuitry connected to the XTR1 17 can be powered from V terminals must be returned to I a local ground for input circuitry driving the XTR117.
The XTR117 is a current-input device with a gain of 100. A current flowing into pin 2 produces IO = 100 x IIN. The input voltage at the IIN pin is zero (referred to the I pin). A voltage input is converted to an input current with an external input resistor, RIN, as shown in Figure 1. Typical full-scale input voltages range from 1V and upward. Full-scale inputs greater than 0.5V are recommend to minimize the ef fects of offset voltage and drift of A1.
. Current drawn from these
REG
, pin 3. The I
RET
RET
pin is
RET
EXTERNAL TRANSISTOR
The external transistor, Q1, conducts the majority of the full-scale output current. Power dissipation in this transistor can approach 0.8W with high loop voltage (40V) and 20mA output current. The XTR117 is designed to use an external transistor to avoid on-chip, thermal-induced errors. Heat produced by Q1 will still cause ambient temperature changes that can influence the XTR117 performance. To minimize these effects, locate Q1 away from sensitive analog circuitry , including XTR117. Mount Q1 so that heat is conducted to the outside of the transducer housing.
The XTR117 is designed to use virtually any NPN transistor with sufficient voltage, current and power rating. Case style and thermal mounting considerations often influence the choice for any given application. Several possible choices are listed in Figure 1. A MOSFET transistor will not improve the accuracy of the XTR117 and is not recommended.
For improved precision use an external voltage reference.
DEVICE VOLTAGE
REF3140 REF3130 REF3125
Use REF32xx for lower drift.
(V
)
REF
4.096V
3.0V
2.5V
Input
Circuitry
5V
V
IN
from I All return current
R
20k
REG
I
REG
IN
I
IN
and I
REF
XTR117
V
REG
8
I
IN
I
2
RET
3
R
1
2.475k
A1
Figure 1. Basic Circuit Connections
+5V
Regulator
Possible choices for Q1(see text):
TYPE PACKAGE
MJE3440
TIP41C
MJD3340
V+ 7
B
6
E
LIM
5
I
O
4
R
R
2
25
Q1
SOT−32 TO−220
D−PAK
C
OUT
10nF
I=100(I
I
O
V
LOOP
R
L
)
IN
5
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