Texas Instruments THS6032IGQER, THS6032IDWPR, THS6032IDWP, THS6032CGQER, THS6032EVM Datasheet
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THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D Low Power ADSL Line Driver Ideal for
Central Office
– 1.35-W Total Power Dissipation for
Full-Rate ADSL Into a 25-Ω Load
D Low-Impedance Shutdown Mode
– Allows Reception of Incoming Signal
During Standby
D Two Modes of Operation
– Class-G Mode: 4 Power Supplies, 1.35 W
Power Dissipation
– Class-AB Mode: 2 Power Supplies, 2 W
Power Dissipation
D Low Distortion
– THD = –62 dBc at f = 1 MHz,
V
O(PP)
= 20 V, 25-Ω Load
– THD = –69 dBc at f = 1 MHz,
V
O(PP)
= 2 V, 25-Ω Load
D 400-mA Minimum Output Current Into a
25-Ω Load
D High Speed
– 65-MHz Bandwidth (–3dB) , 25-Ω Load
– 100-MHz Bandwidth (–3dB) , 100-Ω Load
– 1200 V/µs Slew Rate
D Thermal Shutdown and Short Circuit
Protection
D Evaluation Module Available
description
The THS6032 is a low-power line driver ideal for asymmetrical digital subscriber line (ADSL) applications. This
device contains two high-current, high-speed current-feedback drivers, which can be configured differentially
for driving ADSL signals at the central office. The THS6032 features a unique class-G architecture to lower
power consumption to 1.35 W. The THS6032 can also be operated in a traditional class-AB mode to reduce
the number of power supplies to two.
HIGH-SPEED xDSL LINE DRIVER/RECEIVER FAMILY
DEVICE
DRIVER RECEIVER 5 V ±5 V ±15 V DESCRIPTION
THS6002
•
• • • 500-mA differential line driver and receiver
THS6012 • • • 500-mA differential line driver
THS6022 • • • 250-mA differential line driver
THS6032 • • • 500-mA low-power ADSL central-office line driver
THS6062 • • • • Low-noise ADSL receiver
THS6072 • • • Low-power ADSL receiver
THS7002 • • • Low-noise programmable-gain ADSL receiver
CAUTION: The THS6032 provides ESD protection circuitry. However, permanent damage can still occur if this device is subjected
to high-energy electrostatic discharges. Proper ESD precautions are recommended to avoid any performance degradation or loss
of functionality.
Copyright 2000, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
PAD
†
V
CCH
–
1OUT
V
CCL
–
1IN–
1IN+
NC
SHDN1
SHDN2
PAD
†
PAD
†
V
CCH
+
2OUT
V
CCL
+
2IN–
2IN+
NC
NC
DGND
PAD
†
THERMALLY ENHANCED SOIC (DWP)
PowerPAD PACKAGE
(TOP VIEW)
NC – Not Connected
†
This terminal is internally connected to the thermal pad.
Cross section view showing PowerPAD
(SIDE VIEW)
MicroStar Junior (GQE) PACKAGE
(TOP VIEW)
PowerPAD and MicroStar Junior are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description
The class-G architecture supplies current to the load from four supplies. For low output voltages (typically
–2.5 < VO < +2.5), some of the output current is supplied from the +V
CC(L)
and –V
CC(L)
supplies (typically ±5 V).
For large output voltages (typically V
O
< –2.5 and VO > +2.5), the output current is supplied from +V
CC(H)
and
–V
CC(H)
(typically ±15 V). This current sharing between V
CC(L)
and V
CC(H)
minimizes power dissipation within
the THS6032 output stages for high crest factor ADSL signals.
The THS6032 features a low-impedance shutdown mode, which allows the central office to receive incoming
calls even after the device has been shut down. The THS6032 is available packaged in the patented PowerP AD
package. This package provides outstanding thermal characteristics in a small-footprint surface-mount
package, which is fully compatible with automated surface-mount assembly procedures. It is also available in
the new MicoStar Junior BGA package. This package is only 25 mm
2
in area, allowing for high density PCB
designs.
Shutdown (SHDN1 and SHDN2) allows for powering down the internal circuitry for power conservation or for
multiplexing. Separate shutdown controls are available for each channel on the THS6032. The control levels
are TTL compatible. When turned off, each driver output is placed in a low impedance state which is determined
by the voltage at DGND. This virtual ground at the outputs allows proper termination of a transmission line.
AVAILABLE OPTIONS
PACKAGED DEVICES PACKAGED DEVICES
T
A
PowerPAD PLASTIC SMALL OUTLINE
(DWP)
MicroStar Junior (BGA)
(GQE)
EVALUATION MODULES
0°C to 70°C
THS6032CDWP THS6032CGQE
THS6032EVM
THS6032GQE EVM
‡
–40°C to 85°C
THS6032IDWP THS6032IGQE —
†
The THS6032 is available taped and reeled. Add an R suffix to the device type (i.e.,THS6032CDWPR)
‡
Uses the THS6032CGQE packaging option.
Terminal Functions
TERMINAL
NAME DWP PACKAGE
TERMINAL NO.
GQE PACKAGE
TERMINAL NO.
1OUT 3 B1
1IN– 5 F1
1IN+ 6 H1
2OUT 18 B9
2IN– 16 F9
2IN+ 15 H9
V
CCH–
2 A3
V
CCH+
19 A7
V
CCL–
4 D1
V
CCL+
17 D9
SHDN1 8 J2
SHDN2 9 J4
DGND 12 J7
PAD 1, 10, 11, 20 N/A
NC 7, 13, 14 N/A
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
pin assignments
98765
A
B
C
D
E
F
321
G
H
J
4
DGND
V
CCL+
SHDN1
1OUT
1IN–
NC
NC
NC
NC
NC
NCNC NC NC NC
NC NC NC
NC NC NC
NC NC NC
NC NC
NC NC NC
2OUT
NCNC
NCNC
NC
NC
NCNC NC
NCNC NC
NC NC
NC NC NC
NC
NC
NC
NC
NC NC
NC
V
CCH+
SHDN2
NC
NC
NC NCNC NC
NC
NC NC NC
NC
NC
V
CCH–
NC NC NC
2IN–
NC
NCNC
NC
1IN+
V
CCL–
NOTE: Shaded terminals are used for thermal connection to the ground plane.
2IN+
MicroStar Junior (GQE) PACKAGE
(TOP VIEW)
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
functional block diagram (SOIC package)
V
CCL+
DGND
–
+
V
CCH+
2OUT
19
18
17
16
15
12
2IN–
2IN+
1OUT
1IN–
1IN+
V
CCL–
V
CCH–
SHDN1
8
5
6
3
2
4
–
+
SHDN2
9
NOTE A: Terminals 1, 10, 11, and 20 are internally connected to the thermal pad.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
†
Supply voltage, V
CC(L)
and V
CC(H)
(see Note 1) 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, VI ±V
CCH
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
(see Note 2) 800 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, VID ±4 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total power dissipation at (or below) 25°C free-air temperature
(see Note 2) See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum junction temperature, TJ 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature, T
A
, C-suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I-suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature, T
stg
–65°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 in) from case for 10 seconds 300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. V
CC(L)
must always be less than or equal to V
CC(H)
2. The THS6032 incorporates a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a thermally
dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which
could permanently damage the device. See the Thermal Information section for more information about utilizing the PowerPAD
thermally enhanced packages.
DISSIPATION RATING TABLE
‡
PACKAGE
θ
JA
(°C/W)
θ
JC
(°C/W)
TA = 25°C
POWER RATING
DWP 21.5 0.37 5.8 W
GQE 37.8 4.56 3.3 W
‡
This data was taken using 2 oz. trace and copper pad that is soldered directly to a JEDEC
standard 4 layer 3 in × 3 in PCB.
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
recommended operating conditions
MIN NOM MAX UNIT
V
CC(L) – Class G mode
±3 ±5 ±V
CCH
V
Supply voltage
V
CC(L) – Class AB mode
0 0 0 V
Su ly voltage
V
CC(H)
±5 ±15 ±16 V
p
p
C-suffix 0 70
°
Operating free-air temperatures, T
A
I-suffix –40 85
°C
electrical characteristics, V
CC(L)
= ±5 V, V
CC(H)
= ±15 V , RL = 25 Ω, TA = 25 °C (unless otherwise noted)
dynamic performance
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RL = 25 Ω 65
Gain = 1, RF = 1.3 kΩ
RL = 100 Ω 100
MHz
Small signal bandwidth (–3 dB)
RL = 25 Ω 60
BW
Gain = 2, RF = 1.1 kΩ
RL = 100 Ω 70
MHz
BW
Gain = 1 30
Bandwidth for 0.1 dB flatness
Gain = 2 25
MHz
Full power bandwidth
†
V
OPP
= 20 V 19 MHz
SR Slew rate
‡
Gain = 5, V
O(PP)
= 20 V 1200 V/µs
t
s
Settling time to 0.1% Gain = 1, RL = 25 Ω, 5 V Step 120 ns
†
Full power bandwidth = slew rate/2π V
PEAK
‡
Slew rate is defined from the 25% to the 75% output levels.
noise/distortion performance
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VO = 20 V
(pp)
, Gain = 5, f = 1 MHz –62
THD T otal harmonic distortion
VO = 2 V
(pp)
, Gain = 2,
f = 1 MHz –69
dBc
V
n
Input voltage noise f = 10 kHz 2.4
nV/√Hz
I
n+
11
I
n
Input current noise f = 10 kHz
I
n–
15
nV/√Hz
RL = 150 Ω 0.016%
Differential gain error Gain = 2, NTSC
RL = 25 Ω 0.020%
RL = 150 Ω 0.04°
Differential phase error Gain = 2, NTSC
RL = 25 Ω 0.30°
Crosstalk f = 1 MHz, Gain = 2, RF = 1.1 kΩ –62 dB
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, V
CC(L)
= ±5 V, V
CC(H)
= ±15 V , RL = 25 Ω, TA = 25 °C (unless otherwise noted)
(continued)
dc performance
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Z
(t)
Open loop transimpedance RL = 1 kΩ 2 MΩ
TA = 25°C 1.5 5
V
IO
Input offset voltage
TA = full range
7
mV
Offset voltage drift 10 µV/°C
TA = 25°C 0.5 3
Differential offset voltage
TA = full range
6
mV
TA = 25°C 1.5 9
Negative input bias current
TA = full range 12
I
IB
TA = 25°C 1.5 9
µA
Positive input bias current
TA = full range 12
input characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
ICR
Input common-mode voltage range ±13.2 ±13.4 V
CMRR Common-mode rejection ratio TA = full range 64 72 dB
Inverting terminal 15 Ω
r
i
Input resistance
Non inverting terminal
400 kΩ
Differential input capacitance 1.4 pF
output characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Single-ended RL = 25 Ω ±10.5 ±11
V
O
Output voltage
Differential
RL = 50 Ω ±21 ±22
V
I
O
Output current
†
RL = 25 Ω 400 440 mA
I
SC
Short-circuit current
†
800 mA
†
A heat sink is required to keep junction temperature below absolute maximum when an output is heavily loaded or shorted. See “absolute
maximum ratings.”
power supply
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
CCL
0 ±5 ±V
CCH
V
CC
Operating range
V
CCH
±5 ±15 ±16.5
V
TA = 25°C 4.3 5.8
V
CCL
TA = full range 6.2
mA
I
CC
Quiescent current (per amplifier)
TA = 25°C 4 5
V
CCH
TA = full range 5.5
mA
TA = 25°C 90 100
V
CCL
TA = full range 80
dB
PSRR Power supply rejection ratio
TA = 25°C 69 80
V
CCH
TA = full range 66
dB
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, V
CC(L)
= ±5 V, V
CC(H)
= ±15 V , RL = 25 Ω, TA = 25 °C (unless otherwise noted)
(continued)
shutdown characteristics
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
IL
Shutdown voltage for power up Relative to DGND terminal 0.8 V
V
IH
Shutdown voltage for power down Relative to DGND terminal 2 V
I
IH
Shutdown input current-high V
(SHDN)
= 5 V 200 300 µA
I
IL
Shutdown input current-low V
(SHDN)
= 0.5 V 20 40 µA
Z
o
Output impedance (while in shutdown state) V
(SHDN)
= 2.5 V, f = 1 MHz 0.5 Ω
I
CCL
pp
p
p
0.05 0.2
I
CCH
Supply current (per amplifier) (while in shutdown state) V
(SHDN)
= 2.5 V, VO = 0 V
2.4 3
mA
t
dis
Disable time
†
1.1 µS
t
en
Enable time
†
1.5 µS
†
Disable/enable time begins when the logic signal is applied to the shutdown terminal and ends when the supply current has reached half of its
final value.
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 1
–7
–6
–5
–4
–3
–2
–1
0
1
2
OUTPUT AMPLITUDE
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +1
RL = 25 Ω
VO = 0.2 V
RMS
RF = 1.5 kΩ
1 M 10 M 100 M100 k 500 M
Output Amplitude – dB
RF = 1 kΩ
RF = 1.3 kΩ
Figure 2
–0.4
–0.3
–0.2
–0.1
–0.0
0.1
0.2
0.3
0.4
OUTPUT AMPLITUDE
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +1
RL = 25 Ω
VO = 0.2 V
RMS
RF = 1.5 kΩ
1 M 10 M 100 M100 k 500 M
Output Amplitude – dB
RF = 1.3 kΩ
RF = 1 kΩ
Figure 3
–1
0
1
2
3
4
5
6
7
8
OUTPUT AMPLITUDE
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +2
RL = 25 Ω
VO = 0.4 V
RMS
RF = 1.1 kΩ
1 M 10 M 100 M100 k 500 M
Output Amplitude – dB
RF = 1.3 kΩ
RF = 820 Ω
Figure 4
5.6
5.7
5.8
5.9
6.0
6.1
6.2
6.3
6.4
OUTPUT AMPLITUDE
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +2
RL = 25 Ω
VO = 0.4 V
RMS
RF = 1.1 kΩ
1 M 10 M 100 M100 k 500 M
Output Amplitude – dB
RF = 1.3 kΩ
RF = 820 Ω
Figure 5
7
8
9
10
11
12
13
14
15
16
OUTPUT AMPLITUDE
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +5
RL= 25 Ω
Vo = 0.2 V
RMS
RF = 1.5 kΩ
1M 10M 100M100k 500M
Output Amplitude – dB
RF = 820 Ω
RF = 330 Ω
Figure 6
13
14
15
16
17
18
19
20
21
22
OUTPUT AMPLITUDE
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +10
RL= 25 Ω
Vo = 0.2 V
RMS
1M 10M 100M100k 500M
Output Amplitude – dB
RF = 1 kΩ
RF = 510 Ω
Figure 7
–6
–4
–2
0
2
4
6
8
CLASS-AB MODE OUTPUT AMPLITUDE
vs
FREQUENCY
V
CC(H)
= ± 15 V
V
CC(L)
= GND
G = +2
RF =1.1 kΩ
RL = 25 Ω
VI = 0.2 V
RMS
1 M 10 M 100 M100 k 500 M
Class-AB Mode Output Amplitude – dB
G = +1
RF =1.3 kΩ
f – Frequency – Hz
Figure 8
–8
–6
–4
–2
0
2
4
6
8
OUTPUT AMPLITUDE
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
RL = 100 Ω
VIN = 0.2 V
RMS
Gain = +2, RF = 1.1 kΩ
1 M 10 M 100 M100 k 500 M
Output Amplitude – dB
Gain = +1, RF = 1.3 kΩ
Figure 9
–18
–12
–6
0
6
12
18
SMALL AND LARGE SIGNAL
FREQUENCY RESPONSE
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
1 M 10 M 100 M100 k 500 M
V
O(PP)
= 4 V
V
O(PP)
= 2 V
V
O(PP)
= 1 V
V
O(PP)
= 0.5 V
V
O(PP)
= 0.25 V
Gain = +1
RL = 25 Ω
RF = 1.3 k Ω
– Normalized Output Voltage – dBV
V
O
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 10
–12
–6
0
6
12
18
24
SMALL AND LARGE SIGNAL
FREQUENCY RESPONSE
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
1 M 10 M 100 M100 k 500 M
V
O(PP)
= 8 V
V
O(PP)
= 4 V
V
O(PP)
= 2 V
V
O(PP)
= 1 V
V
O(PP)
= 0.5 V
Gain = +2
RL = 25 Ω
RF = 1.1 k Ω
– Normalized Output Voltage – dBV
V
O
Figure 11
–100
–90
–80
–70
–60
–50
–40
–30
–20
CLASS-G MODE DISTORTION
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V to ± 7.5 V
Gain = +2
RF = 1.1 kΩ
RL = 25 Ω
V
O(PP)
= 2 V
2nd Harmonic
1 M 10 M100 k 20 M
Class-G Mode Distortion – dBc
3rd Harmonic
THD
Figure 12
–100
–90
–80
–70
–60
–50
–40
–30
–20
CLASS-AB MODE DISTORTION
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= GND
Gain = +2
RF = 1.1 kΩ
RL = 25 Ω
V
O(PP)
= 2 V
2nd Harmonic
1 M 10 M100 k 20 M
Class-AB Mode Distortion – dBc
3rd Harmonic
THD
Figure 13
–90
–85
–80
–75
–70
–65
–60
–55
–50
0 5 10 15 20
2ND ORDER DISTORTION
vs
OUTPUT VOLTAGE
V
O(PP)
– Output Voltage – V
V
CC(H)
= ± 15 V
Gain = +5
RF= 1.1 kΩ
RL = 25 Ω
f = 1 MHz
V
CC(L)
= ± 5 V
2ND Order Distortion – dBc
V
CC(L)
= ± 7.5 V
V
CC(L)
= ± 6 V
V
CC(L)
= GND
Figure 14
–90
–85
–80
–75
–70
–65
–60
–55
–50
0 5 10 15 20
3RD ORDER DISTORTION
vs
OUTPUT VOLTAGE
V
O(PP)
– Output Voltage – V
V
CC(H)
= ± 15 V
Gain = +5
RF= 1.1 kΩ
RL = 25 Ω
f = 1 MHz
V
CC(L)
= ± 5 V
3RD Order Distortion – dBc
V
CC(L)
= ± 7.5 V
V
CC(L)
= ± 6 V
V
CC(L)
=GND
Figure 15
–90
–85
–80
–75
–70
–65
–60
–55
–50
0 5 10 15 20
THD
vs
OUTPUT VOLTAGE
V
O(PP)
– Output Voltage – V
V
CC(H)
= ± 15 V
Gain = +5
RF= 1.1 kΩ
RL = 25 Ω
f = 1 MHz
V
CC(L)
= ± 5 V
Total Harmonic Distortion – dBc
V
CC(L)
= ± 7.5 V
V
CC(L)
= ± 6 V
V
CC(L)
=GND
Figure 16
–80
–70
–60
–50
–40
–30
–20
–10
0
CROSSTALK
vs
FREQUENCY
f – Frequency – Hz
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +2
RF = 1.1 kΩ
RL = 25 Ω
Input = Ch. 2
Output = Ch. 1
Input = Ch. 1
Output = Ch. 2
1 M 10 M 100 M100 k 500 M
Crosstalk – dB
Figure 17
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
SLEW RATE
vs
OUTPUT STEP
V
O(pp)
– Output Voltage Step – V
SR – Slew Rate – V/ µs
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +5
RF = 1.1 kΩ
RL = 25 Ω
+SR
–SR
Figure 18
VOLTAGE AND CURRENT NOISE
vs
FREQUENCY
100
1
10
f – Frequency – Hz
100 100 k10 k1 k10
V
N
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
TA = 25°C
In–
In+
nV/ Hz– Voltage Noise –V
n
I
n
– Current Noise – pA/
Hz
THS6032
LOW-POWER ADSL CENTRAL-OFFICE LINE DRIVER
SLOS233C – APRIL1999 – REVISED MARCH 2000
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 19
20
40
60
80
100
120
140
TRANSIMPEDANCE
vs
FREQUENCY
f – Frequency – Hz
1 k 10 k 100 k
Transimpedance – dB
1 M 10 M 100 M 1 G
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
RL= 1 kΩ
Ω
Figure 20
0
20
40
60
80
100
120
POWER SUPPLY REJECTION RATIO
vs
FREQUENCY
f – Frequency – Hz
10 k 100 k 1 M 10 M 100 M
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Gain = +2
RF = 1.1 kΩ
RL = 25 Ω
PSRR – Power Supply Rejection Ratio – dB
+V
CC(L)
–V
CC(L)
±V
CC(H)
Figure 21
0
10
20
30
40
50
60
70
80
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
f – Frequency – Hz
10 k 100 k 1 M 10 M 100 M
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
RF = 1 kΩ
RL = 25 Ω
CMRR – Common-Mode Rejection Ratio – dB
Figure 22
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
–40 –20 0 20 40 60 80 100
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
I
CC(L)
TA – Free-Air Temperature – °C
I
CC
– Supply Current – mA
I
CC(H)
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
Per Amplifier
Figure 23
10.6
10.8
11.0
11.2
11.4
11.6
11.8
12.0
–40 –20 0 20 40 60 80 100
MAXIMUM OUTPUT VOLTAGE
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
V
CC(H)
= ± 15 V
V
CC(L)
=± 5 V
OUT
– Maximum Output Voltage – VV
+V
OUT
–V
OUT
Figure 24
1.0
1.2
1.4
1.6
1.8
2.0
–40 –20 0 20 40 60 80 100
INPUT OFFSET VOLTAGE
vs
FREE-AIR TEMPERATURE
TA – Free-Air Temperature – °C
V
CC(H)
= ± 15
V
CC(L)
=± 5 V
V
IO
– Input Offset Voltage – mV
–40 –20 0 20 40 60 80 100
Figure 25
INPUT BIAS CURRENT
vs
FREE-AIR TEMPERATURE
lib+
I
IB
– Input Bias Current – Aµ
TA – Free-Air Temperature – °C
lib–
2
1.75
1.5
1.25
1
0.75
0.5
0.25
0
Figure 26
12345678
DIFFERENTIAL GAIN
vs
LOADING
Gain = 2
RF = 1.1 kΩ
40 IRE Modulation
Worst Case
± 100 IRE Ramp
Number of 150 Ω Loads
0.02
0.03
0.04
0.05
0.01
0
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
PAL
NTSC
Differential Gain – %
Figure 27
0.0
0.1
0.2
0.3
0.4
0.5
12345678
DIFFERENTIAL PHASE
vs
LOADING
Gain = 2
RF = 1.1 kΩ
40 IRE Modulation
Worst Case
± 100 IRE Ramp
Number of 150 Ω Loads
V
CC(H)
= ± 15 V
V
CC(L)
= ± 5 V
PAL
NTSC
Differential Phase – %
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