TEXAS INSTRUMENTS THS3120, THS3121 Technical data

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0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0 1 2 3 4 5 6 7 8

Number of 150 Ω Loads

Differential Gain − %

PAL

NTSC

Gain = 2,
RF = 649 Ω,
VS = ±15 V,
40 IRE − NTSC and PAL,
Worst Case ±100 IRE Ramp

+

−

75 Ω

75 Ω

75 Ω

75 Ω

75 Ω

n Lines

V

O(1)

V

O(n)

75-Ω Transmission Line

V

I

649 Ω 649 Ω

−15 V

15 V

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0 1 2 3 4 5 6 7 8

Number of 150 Ω Loads

Differential Phase − deg

PAL

NTSC

Gain = 2,
RF = 649 Ω,
VS = ±15 V,
40 IRE − NTSC and PAL,
Worst Case ±100 IRE Ramp

DIFFERENTIAL PHASE

vs

NUMBER OF LOADS

DIFFERENTIAL GAIN

vs

NUMBER OF LOADS

VIDEO DISTRIBUTION AMPLIFIER APPLICATION

查询THS3120供应商

LOW-NOISE, HIGH-OUTPUT DRIVE, CURRENT-FEEDBACK,

FEATURES DESCRIPTION

• Low Noise
– 1 pA/ √ Hz Noninverting Current Noise
– 10 pA/ √ Hz Inverting Current Noise
– 2.5 nV/ √ Hz Voltage Noise

• High Output Current Drive: 475 mA

• High Slew Rate: 1700 V/ µs (R

V

= 8 V

O

)

PP

• Wide Bandwidth: 120 MHz (G = 2, R

• Wide Supply Range: ± 5 V to ± 15 V

• Power-Down Feature: (THS3120 Only)

APPLICATIONS

• Video Distribution

• Power FET Driver

• Pin Driver

• Capacitive Load Driver

= 50 Ω,

L

THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

OPERATIONAL AMPLIFIERS

The THS3120 and THS3121 are low-noise,
high-voltage, high output current drive, current­feedback amplifiers designed to operate over a wide
supply range of ± 5 V to ± 15 V for today's high
performance applications.

The THS3120 offers a power saving mode by provid­ing a power-down pin for reducing the 7-mA quiesc­ent current of the device, when the device is not

= 50 Ω)

L

active.
These amplifiers provide well-regulated ac

performance characteristics. Most notably, the 0.1-dB
flat bandwidth is exceedingly high, reaching beyond
90 MHz. The unity gain bandwidth of 130 MHz allows
for good distortion characteristics at 10 MHz. Coupled
with high 1700-V/ µs slew rate, the THS3120 and
THS3121 amplifiers allow for high output voltage
swings at high frequencies.

The THS3120 and THS3121 are offered in a 8-pin
SOIC (D), and the 8-pin MSOP (DGN) packages with
PowerPAD™.

PowerPAD is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright © 2003, Texas Instruments Incorporated

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1
2
3
4

8
7
6
5

NC

V

IN−

V

IN+

V

S−

NC
V

S+

V

OUT

NC

D, DGNTOP VIEWD, DGNTOP VIEW

NC = No Internal Connection

1
2
3
4

8
7
6
5

REF

V

IN−

V

IN+

V

S−

PD
V

S+

V

OUT

NC

NC = No Internal Connection

THS3120 THS3121

Note: The device with the power down option defaults to the ON state if no signal is applied to the PD pin. Additionallly, the REF pin
functional range is from VS− to (VS+ − 4 V).

THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling procedures and installation procedures can cause damage.

AVAILABLE OPTIONS

T

A

0 ° C to 70 ° C AQA

-40 ° C to 85 ° C APN

0 ° C to 70 ° C AQO

-40 ° C to 85 ° C APO

(1) Available in tape and reel. The R suffix standard quantity is 2500 (e.g. THS3120CDGNR).
(2) The PowerPAD is electrically isolated from all other pins.

PLASTIC SMALL OUTLINE SOIC (D) PLASTIC MSOP (DGN)

THS3120CD THS3120CDGN

THS3120CDR THS3120CDGNR

THS3120ID THS3120IDGN

THS3120IDR THS3120IDGNR

THS3121CD THS3121CDGN

THS3121CDR THS3121CDGNR

THS3121ID THS3121IDGN

THS3121IDR THS3121IDGNR

PACKAGED DEVICE

(1) (2)

SYMBOL

DISSIPATION RATING TABLE

POWER RATING

TJ= 125 ° C

PACKAGE Θ

(1)

D-8

(2)

DGN-8

(1) This data was taken using the JEDEC standard low-K test PCB. For the JEDEC proposed high-K test PCB, the Θ

power rating at TA= 25 ° C of 1.05 W.

(2) This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3 inch x 3 inch PCB. For further information, refer to

the Application Information section of this data sheet.

( ° C/W) Θ

JC

38.3 95 1.05 W 421 mW

4.7 58.4 1.71 W 685 W

( ° C/W)

JA

TA= 25 ° C TA= 85 ° C

2

JA

is 95 ° C/W with

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THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

RECOMMENDED OPERATING CONDITIONS

MIN NOM MAX UNIT

Supply voltage V

Operating free-air temperature, T

A

Operating junction temperature, continuous operating, T
Normal storage temperature, T

stg

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature (unless otherwise noted)

Supply voltage, VS-to V
Input voltage, V
Differential input voltage, V
Output current, I
Continuous power dissipation See Dissipation Ratings Table
Maximum junction temperature, T
Maximum junction temperature, continuous operation, long term reliability, T

Operating free-air temperature, T

Storage temperature, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 ° C
ESD ratings:

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under, , recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The THS3120 and THS3121 may incorporate a PowerPAD™ on the underside of the chip. This acts as a heatsink and must be

connected to a thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the
PowerPAD™ thermally enhanced package.

(3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(4) The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature

may result in reduced reliability and/or lifetime of the device.

S+

I

(2)

O

ID

(3)

J

A

stg

HBM 1000
CDM 1500
MM 200

Dual supply ± 5 ± 15
Single supply 10 30
Commercial 0 70
Industrial -40 85

J

-40 125 ° C

-40 85 ° C

(1)

550 mA

150 ° C

(4)

J

125 ° C
Commercial 0 ° C to 70 ° C
Industrial -40 ° C to 85 ° C

-65 ° C to 125 ° C

UNIT

± 4 V

33 V
± V

S

° C

3

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THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

ELECTRICAL CHARACTERISTICS

VS= ±15 V, RF= 649 Ω,R

PARAMETER TEST CONDITIONS

AC PERFORMANCE

Small-signal bandwidth, -3 dB

0.1 dB bandwidth flatness G = 2, RF= 649 Ω , VO= 200 mV
Large-signal bandwidth G = 5, RF= 499 Ω , VO= 2 V

Slew rate (25% to 75% level) V/µs TYP

Slew rate 900 V/µs MAX
Rise and fall time G = -5, VO= 10-V step, RF= 499 Ω 10 ns TYP

Settling time to 0.1% G = -2, VO= 2 VPPstep 11
Settling time to 0.01% G = -2, VO= 2 VPPstep 52
Harmonic distortion

2nd Harmonic distortion

3rd Harmonic distortion

Input voltage noise f > 20 kHz 2.5 nV / √ Hz TYP
Noninverting input current noise f > 20 kHz 1 pA / √ Hz TYP
Inverting input current noise f > 20 kHz 10 pA / √ Hz TYP

Differential gain

Differential phase

DC PERFORMANCE

Transimpedance VO= ± 3.75 V, Gain = 1 1.9 1.3 1 1 M Ω MIN
Input offset voltage 2 6 8 8 mV MAX

Average offset voltage drift ± 10 ± 10 µV/ ° C TYP

Noninverting input bias current 1 4 6 6 µA MAX

Average bias current drift ± 10 ± 10 nA/ ° C TYP

Inverting input bias current 3 15 20 20 µA MAX

Average bias current drift ± 10 ± 10 nA/ ° C TYP

Input offset current 4 15 20 20 µA MAX

Average offset current drift ± 30 ± 30 nA/ ° C TYP

INPUT CHARACTERISTICS

Input common-mode voltage range ± 13.3 ± 13 ± 12.8 ± 12.8 V MIN
Common-mode rejection ratio VCM= ± 12.5 V 70 63 60 60 dB MIN
Noninverting input resistance 41 M Ω TYP
Noninverting input capacitance 0.4 pF TYP

OUTPUT CHARACTERISTICS

Output voltage swing V MIN

Output current (sourcing) RL= 25 Ω 475 425 400 400 mA MIN
Output current (sinking) RL= 25 Ω 490 425 400 400 mA MIN
Output impedance f = 1 MHz, Closed loop 0.04 Ω TYP

= 50 Ω, and G = 2 (unless otherwise noted)

L

TYP OVER TEMPERATURE

25 ° C 25 ° C UNIT

G = 1, RF= 806 Ω , VO= 200 mV
G = 2, RF= 649 Ω , VO= 200 mV
G = 5, RF= 499 Ω , VO= 200 mV
G = 10, RF= 301 Ω , VO= 200 mV

G = 1, VO= 4-V step, RF= 806 Ω 1500
G = 2, VO= 8-V step, RF= 649 Ω 1700
Recommended maximum SR for

repetitive signals

G = 2,
RF= 649 Ω ,
VO= 2 VPP,
f = 10 MHz

G = 2,
RL= 150 Ω , TYP
RF= 649 Ω

VCM= 0 V

VCM= 0 V

VCM= 0 V

VCM= 0 V

RL= 1 k Ω ± 14 ± 13.5 ± 13 ± 13
RL= 50 Ω ± 13.5 ± 12.5 ± 12 ± 12

(1)

PP
PP
PP

PP

PP

PP

RL= 50 Ω 51
RL= 499 Ω 53
RL= 50 Ω 50
RL= 499 Ω 65

NTSC 0.007%
PAL 0.007%
NTSC 0.018 °
PAL 0.022 °

130
120
105

66
90
80

0 ° C to -40 ° C to MIN/TYP/

70 ° C 85 ° C MAX

MHz TYP

ns TYP

dBc TYP

(1) For more information, see the Application Information section of this data sheet.
4

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THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

ELECTRICAL CHARACTERISTICS (continued)

VS= ±15 V, RF= 649 Ω,R

PARAMETER TEST CONDITIONS

POWER SUPPLY

Specified operating voltage ± 15 ± 16 ± 16 ± 16 V MAX
Maximum quiescent current 7 8.5 11 11 mA MAX
Minimum quiescent current 7 5.5 4 4 mA MIN
Power supply rejection (+PSRR) VS+= 15.5 V to 14.5 V, VS-= 15 V 83 75 70 70 dB MIN
Power supply rejection (-PSRR) VS+= 15 V, VS-= -15.5 V to -14.5 V 78 70 65 65 dB MIN

POWER-DOWN CHARACTERISTICS

Power-down voltage level V MAX

Power-down quiescent current PD = 0V 300 450 500 500 µA MAX

VPDquiescent current µA TYP

Turnon time delay 90% of final value 4
Turnoff time delay 10% of final value 6
Input impedance 3.4 || 1.7 k Ω || pF TYP

= 50 Ω, and G = 2 (unless otherwise noted)

L

Enable, REF = 0 V ≤ 0.8
Power-down , REF = 0 V ≥ 2

VPD= 0 V, REF = 0 V, 11
VPD= 3.3 V, REF = 0 V 11

TYP OVER TEMPERATURE

25 ° C 25 ° C UNIT

0 ° C to -40 ° C to MIN/TYP/

70 ° C 85 ° C MAX

µs TYP

5

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THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

ELECTRICAL CHARACTERISTICS

VS= ±5 V, RF= 750 Ω, RL= 50 Ω, and G = 2 (unless otherwise noted)

TYP OVER TEMPERATURE

PARAMETER TEST CONDITIONS

AC PERFORMANCE

G = 1, RF= 909 Ω , VO= 200 mV

Small-signal bandwidth, -3 dB

0.1 dB bandwidth flatness G = 2, RF= 750 Ω , VO= 200 mV
Large-signal bandwidth G = 2, RF= 750 Ω , VO= 2 V

Slew rate (25% to 75% level) V/µs TYP

Slew rate 900 V/µs MAX
Rise and fall time G = -5, VO= 5-V step, RF= 499 Ω 10 ns TYP

Settling time to 0.1% G = -2, VO= 2 VPPstep 7
Settling time to 0.01% G = -2, VO= 2 VPPstep 42
Harmonic distortion

2nd Harmonic distortion

3rd Harmonic distortion

Input voltage noise f > 20 kHz 2.5 nV / √ Hz TYP
Noninverting input current noise f > 20 kHz 1 pA / √ Hz TYP
Inverting input current noise f > 20 kHz 10 pA / √ Hz TYP

Differential gain

Differential phase

DC PERFORMANCE

Transimpedance VO= ± 1.25 V, Gain = 1 1.2 0.9 0.7 0.7 M Ω MIN
Input offset voltage 3 6 8 8 mV MAX

Average offset voltage drift ± 10 ± 10 µV/ ° C TYP

Noninverting input bias current 1 4 6 6 µA MAX

Average bias current drift ± 10 ± 10 nA/ ° C TYP

Inverting input bias current 2 15 20 20 µA MAX

Average bias current drift ± 10 ± 10 nA/ ° C TYP

Input offset current 2 15 20 20 µA MAX

Average offset current drift ± 30 ± 30 nA/ ° C TYP

INPUT CHARACTERISTICS

Input common-mode voltage range ± 3.2 ± 2.9 ± 2.8 ± 2.8 V MIN
Common-mode rejection ratio VCM= ± 2.5 V 66 62 58 58 dB MIN
Noninverting input resistance 35 M Ω TYP
Noninverting input capacitance 0.5 pF TYP

OUTPUT CHARACTERISTICS

Output voltage swing V MIN

Output current (sourcing) RL= 10 Ω 310 250 200 200 mA MIN
Output current (sinking) RL= 10 Ω 325 250 200 200 mA MIN
Output impedance f = 1 MHz 0.05 Ω TYP

G = 2, RF= 750 Ω , VO= 200 mV
G = 5, RF= 499 Ω , VO= 200 mV
G = 10, RF= 301 Ω , VO= 200 mV

G = 1, VO= 2-V step, RF= 909 Ω 560
G = 2, VO= 2-V step, RF= 750 Ω 620
Recommended maximum SR for

repetitive signals

G = 2,
RF= 649 Ω ,
VO= 2 VPP,
f = 10 MHz

G = 2,
RL= 150 Ω , TYP
RF= 806 Ω

VCM= 0 V

VCM= 0 V

VCM= 0 V

VCM= 0 V

RL= 1 k Ω ± 4 ± 3.8 ± 3.7 ± 3.7
RL= 50 Ω ± 3.9 ± 3.7 ± 3.6 ± 3.6

(1)

PP
PP
PP

PP

PP

PP

RL= 50 Ω 51
RL= 499 Ω 53
RL= 50 Ω 48
RL= 499 Ω 60

NTSC 0.008%
PAL 0.008%
NTSC 0.014 °
PAL 0.018 °

25 ° C 25 ° C UNIT

105
100

95
70
70
85

0 ° C to -40 ° C to MIN/TYP/

70 ° C 85 ° C MAX

MHz TYP

ns TYP

dBc TYP

(1) For more information, see the Application Information section of this data sheet.
6

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THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

ELECTRICAL CHARACTERISTICS (continued)

VS= ±5 V, RF= 750 Ω, RL= 50 Ω, and G = 2 (unless otherwise noted)

TYP OVER TEMPERATURE

PARAMETER TEST CONDITIONS

POWER SUPPLY

Specified operating voltage ± 5 ± 4.5 ± 4.5 ± 4.5 V MIN
Maximum quiescent current 6.5 8 10 10 mA MAX
Minimum quiescent current 6.5 4 3.5 3.5 mA MIN

Power supply rejection (+PSRR) 80 72 67 67 dB MIN

Power supply rejection (-PSRR) 75 67 62 62 dB MIN

POWER-DOWN CHARACTERISTICS

Power-down voltage level V MAX

Power-down quiescent current PD = 0 V 200 450 500 500 µA MAX

VPDquiescent current µA TYP

Turnon time delay 90% of final value 4
Turnoff time delay 10% of final value 6
Input impedance 3.4 || 1.7 k Ω || pF TYP

VS+= 5.5 V to 4.5 V,
VS-= 5 V

VS+= 5 V,
VS-= -5.5 V to -4.5 V

Enable, REF = 0 V ≤ 0.8
Power-down , REF = 0 V ≥ 0.2

VPD= 0 V, REF = 0 V, 11
VPD= 3.3 V, REF = 0 V 11

25 ° C 25 ° C UNIT

0 ° C to -40 ° C to MIN/TYP/

70 ° C 85 ° C MAX

µs TYP

7

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THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

TYPICAL CHARACTERISTICS

TABLE OF GRAPHS

± 15-V graphs

Noninverting small signal gain frequency response 1, 2
Inverting small signal gain frequency response 3

0.1 dB flatness 4
Noninverting large signal gain frequency response 5
Inverting large signal gain frequency response 6
Frequency response capacitive load 7
Recommended R
2nd Harmonic distortion vs Frequency 9
3rd Harmonic distortion vs Frequency 10
Harmonic distortion vs Output voltage swing 11, 12
Slew rate vs Output voltage step 13, 14
Noise vs Frequency 15
Settling time 16, 17
Quiescent current vs Supply voltage 18
Output voltage vs Load resistance 19
Input bias and offset current vs Case temperature 20
Input offset voltage vs Case temperature 21
Transimpedance vs Frequency 22
Rejection ratio vs Frequency 23
Noninverting small signal transient response 24
Inverting large signal transient response 25
Overdrive recovery time 26
Differential gain vs Number of loads 27
Differential phase vs Number of loads 28
Closed loop output impedance vs Frequency 29
Power-down quiescent current vs Supply voltage 30
Turnon and turnoff time delay 31

± 5-V graphs

Noninverting small signal gain frequency response 32
Inverting small signal gain frequency response 33

0.1 dB flatness 34
Slew rate vs Output voltage step 35, 36
2nd Harmonic distortion vs Frequency 37
3rd Harmonic distortion vs Frequency 38
Harmonic distortion vs Output voltage swing 39, 40
Noninverting small signal transient response 41
Inverting small signal transient response 42
Input bias and offset current vs Case temperature 43
Overdrive recovery time 44
Settling time 45
Rejection ratio vs Frequency 46

ISO

vs Capacitive load 8

FIGURE

8

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0

1

2

3

4

5

6

7

8

9

1 M 10 M 100 M 1 G

f − Frequency − Hz

Noninverting Gain − dB

RF = 475 Ω

RF = 649 Ω

RF = 750 Ω

Gain = 2,
RL = 50 Ω,
VO = 0.2 VPP,
VS = ±15 V

−4

−2

0

2

4

6

8

10

12

14

16

18

20

22

24

100 k 1 M 10 M 100 M 1 G

f − Frequency − Hz

Noninverting Gain − dB

G = 1, RF = 806 Ω

G = 10, RF = 301 Ω

G = 5, RF = 499 Ω

G = 2, RF = 649 Ω

RL = 50 Ω,
VO = 0.2 VPP,
VS = ±15 V

-4

-2

0

2

4

6

8

10

12

14

16

18

20

22

24

100 k 1 M 10 M 100 M 1 G

f - Frequency - Hz

Inverting Gain - dB

G = -1, RF = 681 Ω

G = -10, RF = 365 Ω

G = -5, RF = 499 Ω

G = -2, RF = 681 Ω

RL = 50 Ω,

VO = 0.2 VPP,

VS = ±15 V

0

2

4

6

8

10

12

14

16

100 k 1 M 10 M 100 M 1 G

f − Frequency − Hz

Noninverting Gain − dB

G = 5, RF = 499 Ω

G = 2, RF = 681 Ω

RL = 50 Ω,
VO = 2 VPP,
VS = ±15 V

5.7

5.8

5.9

6

6.1

6.2

6.3

100 k 1 M 10 M 100 M

Gain = 2,
RF = 562 Ω,
RL = 50 Ω,
VO = 0.2 VPP,
VS = ±15 V

f - Frequency - Hz

Noninverting Gain - dB

-4

-2

0

2

4

6

8

10

12

14

16

1 M 10 M 100 M 1 G

f - Frequency - Hz

G = -5, RF = 499 Ω

G =-1, RF = 681 Ω

RL = 50 Ω,
VO = 2 VPP,
VS = ±15 V

Inverting Gain - dB

-2

0

2

4

6

8

10

12

14

16

10 M 100 M

Capacitive Load - Hz

Signal Gain - dB

Gain = 5,
RL = 50 Ω
VS = ±15 V

R

(ISO)

= 49.9 Ω CL = 10 pF

R

(ISO)

= 40.2 Ω

CL = 22 pF

R

(ISO)

= 30 Ω

CL = 47 pF

R

(ISO)

= 20 Ω

CL = 100 pF

0

10

20

30

40

50

60

10 100

C

L

− Capacitive Load − pF

Recommended R Ω

Gain = 5,
RL = 50 Ω,
VS = ±15 V

ISO

Resistance −

-90

-80

-70

-60

-50

-40

-30

1 M 10 M 100 M

f - Frequency - Hz

2 nd Harmonic Distortion - dBc

G = 2,
RF = 649 Ω

G = 2, RF = 649 Ω,
RL = 499 Ω

VO = 2 VPP,
RL = 50 Ω,
VS = ±15 V

G = 5,
RF = 499 Ω

-100
100 k

THS3120, THS3121

SLOS420A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

TYPICAL CHARACTERISTICS ( ±15 V)

NONINVERTING SMALL SIGNAL NONINVERTING SMALL SIGNAL INVERTING SMALL SIGNAL

FREQUENCY RESPONSE FREQUENCY RESPONSE FREQUENCY RESPONSE

Figure 1. Figure 2. Figure 3.

0.1 dB FLATNESS FREQUENCY RESPONSE FREQUENCY RESPONSE

NONINVERTING LARGE SIGNAL INVERTING LARGE SIGNAL

Figure 4. Figure 5. Figure 6.

FREQUENCY RESPONSE vs vs

RECOMMENDED R

ISO

2nd HARMONIC DISTORTION

CAPACITIVE LOAD CAPACITIVE LOAD FREQUENCY

Figure 7. Figure 8. Figure 9.

9