TEXAS INSTRUMENTS THS3110, THS3111 Technical data

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+

−

75 Ω

75 Ω

75 Ω

75 Ω

75 Ω

n Lines

V

O(1)

V

O(n)

75-Ω Transmission Line

V

I

1 kΩ

−15 V

15 V

DIFFERENTIAL GAIN

vs

NUMBER OF LOADS

VIDEO DISTRIBUTION AMPLIFIER APPLICATION

0

0.05

0.1

0.15

0.2

0.25

0.3

0 1 2 3 4 5 6 7 8

Number of 150 Ω Loads

Differential Gain − %

PAL

NTSC

Gain = 2,
RF = 1 kΩ,
VS = ±15 V,
40 IRE − NTSC and PAL,
Worst Case ±100 IRE Ramp

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0 1 2 3 4 5 6 7 8

Number of 150 Ω Loads

Differential Phase −

PAL

NTSC

Gain = 2,
RF = 1 kΩ,
VS = ±15 V,
40 IRE − NTSC and PAL,
Worst Case ±100 IRE Ramp



DIFFERENTIAL PHASE

vs

NUMBER OF LOADS

1 kΩ

查询THS3110供应商

LOW-NOISE, HIGH-VOLTAGE, CURRENT-FEEDBACK,

FEATURES DESCRIPTION

• Low Noise
– 2 pA/ √ Hz Noninverting Current Noise
– 10 pA/ √ Hz Inverting Current Noise
– 3 nV/ √ Hz Voltage Noise

• High Output Current Drive: 260 mA

• High Slew Rate: 1300 V/ µs (R

V

= 8 V

O

)

PP

• Wide Bandwidth: 90 MHz (G = 2, R

• Wide Supply Range: ± 5 V to ± 15 V

• Power-Down Feature: (THS3110 Only)

APPLICATIONS

• Video Distribution

• Power FET Driver

• Pin Driver

• Capacitive Load Driver

= 100 Ω,

L

OPERATIONAL AMPLIFIERS

= 100 Ω)

L

THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

The THS3110 and THS3111 are low-noise,
high-voltage, current-feedback amplifiers designed to
operate over a wide supply range of ± 5 V to ± 15 V for
today's high performance applications.

The THS3110 features a power-down pin (PD) that
puts the amplifier in low power standby mode, and
lowers the quiescent current from 4.8 mA to 270 µA.

These amplifiers provide well-regulated ac
performance characteristics. The unity gain
bandwidth of 100 MHz allows for good distortion
characteristics below 10 MHz. Coupled with high
1300-V/ µs slew rate, the THS3110 and THS3111
amplifiers allow for high output voltage swings at high
frequencies.

The THS3110 and THS3111 are offered in a 8-pin
SOIC (D), and the 8-pin MSOP (DGN) packages with
PowerPAD™.

PowerPAD is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright © 2003, Texas Instruments Incorporated

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1
2
3
4

8
7
6
5

NC

V

IN−

V

IN+

V

S−

NC
V

S+

V

OUT

NC

D, DGNTOP VIEWD, DGNTOP VIEW

NC = No Internal Connection

1
2
3
4

8
7
6
5

REF

V

IN−

V

IN+

V

S−

PD
V

S+

V

OUT

NC

NC = No Internal Connection

THS3110 THS3111

Note: The device with the power down option defaults to the ON state if no signal is applied to the PD pin. Additionallly, the REF pin
functional range is from VS− to (VS+ − 4 V).

THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling procedures and installation procedures can cause damage.

AVAILABLE OPTIONS

T

A

0 ° C to 70 ° C BJB

-40 ° C to 85 ° C BIR

0 ° C to 70 ° C BJA

-40 ° C to 85 ° C BIS

(1) Available in tape and reel. The R suffix standard quantity is 2500 (e.g. THS3110CDGNR).
(2) The PowerPAD is electrically isolated from all other pins.

PLASTIC SMALL OUTLINE SOIC (D) PLASTIC MSOP (DGN)

THS3110CD THS3110CDGN

THS3110CDR THS3110CDGNR

THS3110ID THS3110IDGN

THS3110IDR THS3110IDGNR

THS3111CD THS3111CDGN

THS3111CDR THS3111CDGNR

THS3111ID THS3111IDGN

THS3111IDR THS3111IDGNR

PACKAGED DEVICE

(1) (2)

SYMBOL

DISSIPATION RATING TABLE

POWER RATING

TJ= 125 ° C

PACKAGE Θ

(1)

D-8

(2)

DGN-8

(1) This data was taken using the JEDEC standard low-K test PCB. For the JEDEC proposed high-K test PCB, the Θ

power rating at TA= 25 ° C of 1.05 W.

(2) This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3 inch x 3 inch PCB. For further information, refer to

the Application Informationsection of this data sheet.

( ° C/W) Θ

JC

38.3 95 1.05 W 421 mW

4.7 58.4 1.71 W 685 mW

( ° C/W)

JA

TA= 25 ° C TA= 85 ° C

2

JA

is 95 ° C/W with

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THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

RECOMMENDED OPERATING CONDITIONS

MIN NOM MAX UNIT

Supply voltage V

Operating free-air temperature, T

A

Operating junction temperature, continuous operating temperature, T
Normal storage temperature, T

stg

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature (unless otherwise noted)

Supply voltage, VS-to V
Input voltage, V
Differential input voltage, V
Output current, I
Continuous power dissipation See Dissipation Ratings Table
Maximum junction temperature, T
Maximum junction temperature, continuous operation, long term reliability, T

Operating free-air temperature, T

Storage temperature, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 300 ° C
ESD ratings:

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under, , recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The THS3110 and THS3111 may incorporate a PowerPAD™ on the underside of the chip. This acts as a heatsink and must be

connected to a thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction
temperature which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the
PowerPAD™ thermally enhanced package.

(3) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
(4) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may

result in reduced reliability and/or lifetime of the device.

S+

I

(2)

O

ID

(3)

J

A

stg

HBM 900
CDM 1500
MM 200

Dual supply ± 5 ± 15
Single supply 10 30
Commercial 0 70
Industrial -40 85

J

-40 125

-40 85

(1)

300 mA

150 ° C

(4)

J

125 ° C
Commercial 0 ° C to 70 ° C
Industrial -40 ° C to 85 ° C

-65 ° C to 125 ° C

UNIT

± 4 V

33 V
± V

S

° C

3

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THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

ELECTRICAL CHARACTERISTICS

VS= ±15 V, RF= 1 k Ω,R

PARAMETER TEST CONDITIONS

AC PERFORMANCE

Small-signal bandwidth, -3 dB

0.1 dB bandwidth flatness G = 2, RF= 1.15 k Ω , VO= 200 mV
Large-signal bandwidth G = 5, RF= 806 Ω , VO= 4 V

Slew rate (25% to 75% level) V/µs TYP

Slew rate 900 V/µs MAX
Rise and fall time G = -5, VO= 10-V step, RF= 806 Ω 8 ns TYP

Settling time to 0.1% G = -2, VO= 2 VPPstep 27
Settling time to 0.01% G = -2, VO= 2 VPPstep 250

Harmonic distortion

2nd Harmonic distortion

3rd Harmonic distortion

Input voltage noise f > 20 kHz 3 nV / √ Hz TYP
Noninverting input current noise f > 20 kHz 2 pA / √ Hz TYP
Inverting input current noise f > 20 kHz 10 pA / √ Hz TYP

Differential gain

Differential phase

DC PERFORMANCE

Transimpedance VO= ± 3.75 V, Gain = 1 1.6 1 0.7 0.7 M Ω MIN
Input offset voltage 1.5 6 8 8 mV MAX

Average offset voltage drift ± 10 ± 10 µV/ ° C TYP

Noninverting input bias current 1 4 6 6 µA MAX

Average bias current drift ± 10 ± 10 nA/ ° C TYP

Inverting input bias current 1.5 15 20 20 µA MAX

Average bias current drift ± 10 ± 10 nA/ ° C TYP

Input offset current 2.5 15 20 20 µA MAX

Average offset current drift ± 30 ± 30 nA/ ° C TYP

INPUT CHARACTERISTICS

Input common-mode voltage range ± 13.3 ± 13 ± 12.5 ± 12.5 V MIN
Common-mode rejection ratio VCM= ± 12.5 V 68 62 60 60 dB MIN
Noninverting input resistance 41 M Ω TYP
Noninverting input capacitance 0.4 pF TYP

OUTPUT CHARACTERISTICS

Output voltage swing V MIN

Output current (sourcing) RL= 25 Ω 260 200 175 175 mA MIN
Output current (sinking) RL= 25 Ω 260 200 175 175 mA MIN
Output impedance f = 1 MHz, Closed loop 0.15 Ω TYP

= 100 Ω, and G = 2 (unless otherwise noted)

L

TYP OVER TEMPERATURE

25 ° C 25 ° C UNIT

G = 1, RF= 1.5 k Ω , VO= 200 mV
G = 2, RF= 1 k Ω , VO= 200 mV
G = 5, RF= 806 Ω , VO= 200 mV
G = 10, RF= 604 Ω , VO= 200 mV

G = 1, VO= 4-V step, RF= 1.5 k Ω 800
G = 2, VO= 8-V step, RF= 1 k Ω 1300
Recommended maximum SR for

repetitive signals

G = 2,
RF= 1 k Ω ,
VO= 2 VPP,
f = 10 MHz

G = 2,
RL= 150 Ω , TYP
RF= 1 k Ω

VCM= 0 V

VCM= 0 V

VCM= 0 V

VCM= 0 V

RL= 1 k Ω ± 13.5 ± 13 ± 12.5 ± 12.5
RL= 100 Ω ± 13.4 ± 12.5 ± 12 ± 12

(1)

PP

PP

PP

PP

PP

PP

RL= 100 Ω 52
RL= 1 k Ω 53
RL= 100 Ω 48
RL= 1 k Ω 68

NTSC 0.011%
PAL 0.013%
NTSC 0.029 °
PAL 0.033 °

100

90
87
66
45
95

0 ° C to -40 ° C to MIN/TYP/

70 ° C 85 ° C MAX

MHz TYP

ns TYP

dBc TYP

(1) For more information, see the Application Information section of this data sheet.
4

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THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

ELECTRICAL CHARACTERISTICS (continued)

VS= ±15 V, RF= 1 k Ω,R

PARAMETER TEST CONDITIONS

POWER SUPPLY

Specified operating voltage ± 15 ± 16 ± 16 ± 16 V MAX
Maximum quiescent current 4.8 6.5 7.5 7.5 mA MAX
Minimum quiescent current 4.8 3.8 2.5 2.5 mA MIN
Power supply rejection (+PSRR) VS+= 15.5 V to 14.5 V, VS-= 15 V 83 75 70 70 dB MIN
Power supply rejection (-PSRR) VS+= 15 V, VS-= -15.5 V to -14.5 V 78 70 66 66 dB MIN

POWER-DOWN CHARACTERISTICS

Power-down voltage level V MAX

Power-down quiescent current PD = 0V 270 450 500 500 µA MAX

VPDquiescent current µA TYP

Turnon time delay 90% of final value 4
Turnoff time delay 10% of final value 6
Input impedance 3.4 || 1.7 k Ω || pF TYP

= 100 Ω, and G = 2 (unless otherwise noted)

L

Enable, REF = 0 V ≤ 0.8
Power-down , REF = 0 V ≥ 2

VPD= 0 V, REF = 0 V, 11
VPD= 3.3 V, REF = 0 V 11

TYP OVER TEMPERATURE

25 ° C 25 ° C UNIT

0 ° C to -40 ° C to MIN/TYP/

70 ° C 85 ° C MAX

µs TYP

5

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THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

ELECTRICAL CHARACTERISTICS

VS= ±5 V, RF= 1.15 Ω, RL= 100 Ω, and G = 2 (unless otherwise noted)

TYP OVER TEMPERATURE

PARAMETER TEST CONDITIONS

AC PERFORMANCE

G = 1, RF= 1.5 k Ω , VO= 200 mV

Small-signal bandwidth, -3 dB

0.1 dB bandwidth flatness G = 2, RF= 1.15 k Ω , VO= 200 mV
Large-signal bandwidth G = 5, RF= 806 Ω , VO= 4 V

Slew rate (25% to 75% level) V/µs TYP

Slew rate 900 V/µs MAX
Rise and fall time G = -5, VO= 5-V step, RF= 806 Ω 7 ns TYP

Settling time to 0.1% G = -2, VO= 2 VPPstep 20
Settling time to 0.01% G = -2, VO= 2 VPPstep 200

Harmonic distortion

2nd Harmonic distortion

3rd Harmonic distortion

Input voltage noise f > 20 kHz 3 nV / √ Hz TYP
Noninverting input current noise f > 20 kHz 2 pA / √ Hz TYP
Inverting input current noise f > 20 kHz 10 pA / √ Hz TYP

Differential gain

Differential phase

DC PERFORMANCE

Transimpedance VO= ± 1.25 V, Gain = 1 1.6 1 0.7 0.7 M Ω MIN
Input offset voltage 3 6 8 8 mV MAX

Average offset voltage drift ± 10 ± 10 µV/ ° C TYP

Noninverting input bias current 1 4 6 6 µA MAX

Average bias current drift ± 10 ± 10 nA/ ° C TYP

Inverting input bias current 1 8 10 10 µA MAX

Average bias current drift ± 10 ± 10 nA/ ° C TYP

Input offset current 1 6 8 8 µA MAX

Average offset current drift ± 20 ± 20 nA/ ° C TYP

INPUT CHARACTERISTICS

Input common-mode voltage range ± 3.2 ± 2.9 ± 2.8 ± 2.8 V MIN
Common-mode rejection ratio VCM= ± 2.5 V 65 62 58 58 dB MIN
Noninverting input resistance 35 M Ω TYP
Noninverting input capacitance 0.5 pF TYP

OUTPUT CHARACTERISTICS

Output voltage swing V MIN

Output current (sourcing) RL= 10 Ω 220 150 125 125 mA MIN
Output current (sinking) RL= 10 Ω 220 150 125 125 mA MIN
Output impedance f = 1 MHz, Closed loop 0.15 Ω TYP

G = 2, RF= 1.15 k Ω , VO= 200 mV
G = 5, RF= 806 Ω , VO= 200 mV
G = 10, RF= 604 Ω , VO= 200 mV

G = 1, VO= 4-V step, RF= 1.5 k Ω 640
G = 2, VO= 4-V step, RF= 1 k Ω 700
Recommended maximum SR for

repetitive signals

G = 2,
RF= 1 k Ω ,
VO= 2 VPP,
f = 10 MHz

G = 2,
RL= 150 Ω , TYP
RF= 1 k Ω

VCM= 0 V

VCM= 0 V

VCM= 0 V

VCM= 0 V

RL= 1 k Ω ± 4 ± 3.8 ± 3.6 ± 3.6
RL= 100 Ω ± 3.8 ± 3.7 ± 3.5 ± 3.5

(1)

PP

PP

PP

PP

PP

PP

RL= 100 Ω 55
RL= 1 k Ω 56
RL= 100 Ω 45
RL= 1 k Ω 62

NTSC 0.011%
PAL 0.015%
NTSC 0.020 °
PAL 0.033 °

25 ° C 25 ° C UNIT

85
78
80
60
15
80

0 ° C to -40 ° C to MIN/TYP/

70 ° C 85 ° C MAX

MHz TYP

ns TYP

dBc TYP

(1) For more information, see the Application Information section of this data sheet.
6

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THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

ELECTRICAL CHARACTERISTICS (continued)

VS= ±5 V, RF= 1.15 Ω, RL= 100 Ω, and G = 2 (unless otherwise noted)

TYP OVER TEMPERATURE

PARAMETER TEST CONDITIONS

POWER SUPPLY

Specified operating voltage ± 5 ± 4.5 ± 4.5 ± 4.5 V MIN
Maximum quiescent current 4 6 7 7 mA MAX
Minimum quiescent current 4 3.2 2 2 mA MIN
Power supply rejection (+PSRR) VS+= 5.5 V to 4.5 V, VS-= 5 V 80 72 67 67 dB MIN
Power supply rejection (-PSRR) VS+= 5 V, VS-= -5.5 V to -4.5 V 75 67 62 62 dB MIN

POWER-DOWN CHARACTERISTICS

Power-down voltage level V MAX

Power-down quiescent current PD = 0 V 200 450 500 500 µA MAX

VPDquiescent current µA TYP

Turnon time delay 90% of final value 4
Turnoff time delay 10% of final value 6
Input impedance 3.4 || 1.7 k Ω || pF TYP

Enable, REF = 0 V ≤ 0.8
Power-down , REF = 0 V ≥ 2

VPD= 0 V, REF = 0 V, 11
VPD= 3.3 V, REF = 0 V 11

25 ° C 25 ° C UNIT

0 ° C to -40 ° C to MIN/TYP/

70 ° C 85 ° C MAX

µs TYP

7

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THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

TYPICAL CHARACTERISTICS

TABLE OF GRAPHS

FIGURE

± 15-V graphs

Noninverting small signal gain frequency response 1, 2
Inverting small signal gain frequency response 3

0.1 dB flatness 4
Noninverting large signal gain frequency response 5
Inverting large signal gain frequency response 6
Frequency response capacitive load 7
Recommended R
2nd Harmonic distortion vs Frequency 9
3rd Harmonic distortion vs Frequency 10
Harmonic distortion vs Output voltage swing 11, 12
Slew rate vs Output voltage step 13, 14, 15, 16
Noise vs Frequency 17
Settling time 18, 19
Quiescent current vs Supply voltage 20
Output voltage vs Load resistance 21
Input bias and offset current vs Case temperature 22
Input offset voltage vs Case temperature 23
Transimpedance vs Frequency 24
Rejection ratio vs Frequency 25
Noninverting small signal transient response 26
Inverting large signal transient response 27
Overdrive recovery time 28
Differential gain vs Number of loads 29
Differential phase vs Number of loads 30
Closed loop output impedance vs Frequency 31
Power-down quiescent current vs Supply voltage 32
Turnon and turnoff time delay 33

± 5-V graphs

Noninverting small signal gain frequency response 34
Inverting small signal gain frequency response 35

0.1 dB flatness 36
Noninverting large signal gain frequency response 37
Inverting large signal gain frequency response 38
Slew rate vs Output voltage step 39, 40, 41, 42
2nd Harmonic distortion vs Frequency 43
3rd Harmonic distortion vs Frequency 44
Harmonic distortion vs Output voltage swing 45, 46
Noninverting small signal transient response 47
Inverting small signal transient response 48
Overdrive recovery time 49
Rejection ratio vs Frequency 50

ISO

vs Capacitive load 8

8

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-4

-2

0

2

4

6

8

10

12

14

16

18

20

22

24

100 k 1 M 10 M 100 M 1 G

f - Frequency - Hz

Noninverting Gain - dB

G = 1, RF = 1.5 kΩ

G = 10, RF = 604 Ω

G = 5, RF = 806 Ω

G = 2, RF = 1.15 kΩ

RL = 100 Ω,
VO = 0.2 VPP,
VS = ±15 V

0

1

2

3

4

5

6

7

8

9

1 M 10 M 100 M 1 G

f - Frequency - Hz

Noninverting Gain - dB

RF = 649 Ω

Gain = 2,
RL = 100 Ω,
VO = 0.2 VPP,
VS = ±15 V

RF = 1.15 kΩ

RF = 1.5 kΩ

-4

-2

0

2

4

6

8

10

12

14

16

18

20

22

24

1 M 10 M 100 M 1 G

f - Frequency - Hz

Inverting Gain - dB

G = -10, RF = 649 Ω

RL = 100 Ω,
VO = 0.2 VPP,
VS = ±15 V

G = -1, RF = 1 kΩ

G = -5, RF = 909 Ω

G = -2, RF = 1.1 kΩ

-4

-2

0

2

4

6

8

10

12

14

16

1 M 10 M 100 M 1 G

f - Frequency - Hz

G = -5, RF = 806 Ω

G =-1, RF = 1 kΩ

RL = 100 Ω,
VO = 2 VPP,
VS = ±15 V

Inverting Gain - dB

5.6

5.7

5.8

5.9

6

6.1

6.2

6.3

6.4

100 k 1 M 10 M 100 M

Gain = 2,
RF = 1.15 kΩ,
RL = 100 Ω,
VO = 0.2 VPP,
VS = ±15 V

f - Frequency - Hz

Noninverting Gain - dB

0

2

4

6

8

10

12

14

16

1 M 10 M 100 M 1 G

f - Frequency - Hz

Noninverting Gain - dB

G = 5, RF = 806 Ω

G = 2, RF = 1 kΩ

RL = 100 Ω,
VO = 4 VPP,
VS = ±15 V

0

10

20

30

40

50

60

10 100

C

L

- Capacitive Load - pF

Recommended R Ω

Gain = 5,
RL = 100 Ω,
VS = ±15 V

ISO

-

-2

0

2

4

6

8

10

12

14

16

10 M 100 M

Capacitive Load - MHz

Signal Gain - dB

Gain = 5,
RL = 100 Ω
VS = ±15 V

R

(ISO)

= 39.2 Ω

CL = 47 pF

R

(ISO)

= 28 Ω

CL = 100 pF

R

(ISO)

= 54.9 Ω

CL = 10 pF

R

(ISO)

= 54.9 Ω, CL = 22 pF

200 M

‘

-90

-80

-70

-60

-50

-40

-30

1 M 10 M 100 M

f - Frequency - Hz

2nd Harmonic Destortion - dBc

VO = 2 VPP,
RL = 100 Ω,
VS = ±15 V

100 k

-100

G = -2, RF = 1 kΩ
RL = 1 kΩ,

G = 5, RF = 806 Ω

G = 2, RF = 1 kΩ

THS3110, THS3111

SLOS422A – SEPTEMBER 2003 – REVISED NOVEMBER 2003

TYPICAL CHARACTERISTICS ( ±15 V)

NONINVERTING SMALL SIGNAL NONINVERTING SMALL SIGNAL INVERTING SMALL SIGNAL

FREQUENCY RESPONSE FREQUENCY RESPONSE FREQUENCY RESPONSE

Figure 1. Figure 2. Figure 3.

0.1 dB FLATNESS FREQUENCY RESPONSE FREQUENCY RESPONSE

NONINVERTING LARGE SIGNAL INVERTING LARGE SIGNAL

Figure 4. Figure 5. Figure 6.

FREQUENCY RESPONSE vs vs

RECOMMENDED R

ISO

2nd HARMONIC DISTORTION

CAPACITIVE LOAD Capacitive LOAD FREQUENCY

Figure 7. Figure 8. Figure 9.

9