ST STTH112 User Manual

Features

■ Low forwarded voltage drop

■ High reliability

■ High surge current capability

■ Soft switching for reduced EMI disturbances

■ Planar technology

Description

The STTH112, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications

STTH112

High voltage ultrafast rectifier

DO-41

STTH112

SMA

STTH112A

SMB

STTH112U

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j (max)

V

F (max)

1 A

1200 V

175 °C

1.65 V

October 2009 Doc ID 9343 Rev 5 1/8

www.st.com

8

Electrical characteristics STTH112

1 Electrical characteristics

Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

V

(RMS)

Repetitive peak reverse voltage 1200 V

RRM

Voltage rms 850 V

Tl = 85°C δ =0.5 DO-41

I

F(AV)

Average forward current

1ATl = 115°C δ =0.5 SMA

Tl = 125°C δ =0.5 SMB

DO-41 20

I

Forward surge current t = 8.3 ms

FSM

18

SMB

T

Table 2. Thermal parameters

Storage temperature range - 50 + 175 °C

stg

Maximum operating junction temperature + 175 °C

T

j

Symbol Parameter Value Unit

L = 10 mm DO-41 45

R

th (j-l)

Junction to lead

SMA 30

°C/W

SMB 25

R

th (j-a)

Table 3. Static electrical characteristics

Junction to ambient L = 10 mm DO-41 110

ASMA

Symbol Parameter Tests conditions Min. Typ. Max. Unit

Tj = 25 °C 5

I

Reverse leakage current VR = 1200 V

R

V

Forward voltage drop IF = 1 A

F

Table 4. Dynamic electrical characteristics

= 125 °C 50

T

j

= 25 °C 1.9

T

j

= 125 °C 1.17 1.65

j

= 150 °C 1.10 1.55

T

j

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

= 0.5 A

t

Reverse recovery time

rr

t

Forward recovery time IF = 1 A

fr

V

Forward recovery voltage 30 V

FP

F

Irr = 0.25 A IR = 1A

/dt = 50 A/µs

dI

F

VFR = 1.1 x V

Fmax

= 25 °C 75 ns

T

j

500 ns

Tj = 25 °C

2/8 Doc ID 9343 Rev 5

µA

VT

STTH112 Electrical characteristics

0.00.51.01.52.02.53.03.54.04.55.0

Figure 1. Conduction losses versus average

current

P(W)

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Relative variation of thermal

impedance junction ambient versus
pulse duration (DO-41)

Z/R

th(j-c) th(j-c)

1.0

epoxy FR4, L = 10mm

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

leads

T

t (s)

p

δ

=tp/T

tp

Figure 2. Forward voltage drop versus

forward current

I (A)

FM

100.0

T=125°C

j

(maximum values)

T=125°C

10.0

1.0

0.1

j

(typical values)

V (V)

FM

T=25°C

j

(maximum values)

Figure 4. Relative variation of thermal

impedance junction ambient versus
pulse duration (epoxy FR4) (SMA)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

= 0.5

δ

0.5

0.4

0.3

= 0.2

δ

0.2

= 0.1

δ

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t (s)

p

δ

T

=tp/T

tp

Figure 5. Relative variation of thermal

impedance junction ambient versus
pulse duration (epoxy FR4)(SMB)

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

0.3

δ = 0.2

0.2

δ = 0.1

0.1

Single pulse

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t (s)

p

δ

T

=tp/T

Figure 6. Thermal resistance junction to

ambient versus copper surface
under each lead (DO-41, SMB)

R (°C/W)

th(j-a)

110

100

90

80

70

60

50

40

30

20

tp

10

0

012345678910

Doc ID 9343 Rev 5 3/8

epoxy printed circuit board FR4, copper thickness:35µm

DO-41

L =10mm

leads

SMB

S(cm²)