ST STTH10LCD06C User Manual

STTH10LCD06C

Turbo 2 ultrafast - high voltage rectifier for SMPS

Features

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces conduction and switching losses

Description

The STTH10LCD06C uses ST Turbo2 technology. This device is specially suited for switching power supplies working with interleaved PFCs.

A1

A2

K

A1

TO-220AB

STTH10LCD06CT

STTH10LCD06CFP

K

A1

D2PAK

STTH10LCD06CG-TR

Table 1. Device summary

I

F(AV)

V

RRM

T

j

(typ) 1.25 V

V

F

t

(max) 25 ns

rr

K

TO-220FPAB

A2

2 x 5A

600 V

175 °C

A1

A2

K

April 2011 Doc ID 15897 Rev 3 1/10

www.st.com

10

Characteristics STTH10LCD06C

1 Characteristics

Table 2. Absolute ratings

(1)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

1. Limiting values per diode at 25 °C, unless otherwise specified

2. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 600 V

RRM

Forward current rms 20 A

TO-220AB,

2

PA K

D

Average forward

= 130 °C

T

c

current, δ = 0.5

= 100 °C TO-220FPAB

T

c

Surge non repetitive forward current tp = 10 ms sinusoidal 60 A

FSM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

(2)

Per diode 5 A

Per device 10 A

Per diode 5 A

Per device 10 A

175 °C

Symbol Parameter Value Unit

2

PA K 4 .5

°C/W

R

Table 4. Static electrical characteristics

Junction to case(per diode)

th(j-c)

TO-220AB, D

TO-220FPAB 7.5

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

F

= 25 °C

T

j

= 150 °C 5 50

T

j

= 25 °C

T

j

T

= 150 °C 1.25 1.6

j

= 25 °C

T

j

T

= 150 °C 1.55 2

j

= V

V

R

I

= 5 A

F

= 10 A

I

F

RRM

1

2

2.35

To evaluate the conduction losses use the following equation: P = 1.2 x I

F(AV)

+ 0.08 x I

F2(RMS)

µA

V

2/10 Doc ID 15897 Rev 3

STTH10LCD06C Characteristics

Table 5. Dynamic electrical characteristics

Symbol Parameter

Test conditions

I

= 0.5 A, Irr = 0.25 A,

F

IR = 1 A, Tj = 25 °C

t

Reverse recovery time

rr

I

V

Reverse recovery current

RM

t

Forward recovery time

fr

Forward recovery voltage

FP

= 1 A, dIF/dt = -50 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

= 5 A, dIF/dt = -50 A/µs,

I

F

VR = 400 V, Tj = 125 °C

I

= 5 A, dIF/dt = 100 A/µs

F

VFR = 1.1 x V

= 5 A, dIF/dt = 100 A/µs

I

F

= 1.1 x V

V

FR

Figure 1. Average forward power dissipation

versus average forward current (per diode)

P

(W)

F(AV)

12

δ = 0.2

10

8

6

4

2

0

01234567

δ = 0.05

δ = 0.1

I

F(AV)

(A)

δ = 0.5

δ = 1

δ = tp/T

T

t

p

Min. Typ. Max. Unit

25

35 50

1.8 2.5 A

, Tj = 25 °C

Fmax

, Tj = 25 °C

Fmax

5V

100 ns

Figure 2. Forward voltage drop versus

forward current (per diode)

IFM(A)

50

Tj= 150 °C

(Maximum values)

Tj= 25 °C

(Maximum values)

40

30

20

10

0

(Typical values)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

ns

VFM(V)

Figure 3. Relative variation of thermal

impedance junction to case versus pulse duration (TO-220AB, D

Z

th(j-c)/Rth(j-c)

1.0 TO-220AB

0.9

D2PAK

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

Figure 4. Relative variation of thermal

impedance junction to case versus

2

PAK)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Doc ID 15897 Rev 3 3/10

pulse duration (TO-220FPAB)

Z

th(j-c)/Rth(j-c)

TO-220FPAB

Single pulse

tp(s)