ST STTH108 User Manual

Features
Low forward voltage drop
High reliability
High surge current capability
Planar technology
STTH108
High voltage ultrafast rectifier
A
K
A
K
Description
The STTH108, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications.
SMA
(JEDEC DO-214AC)
STTH108A

Table 1. Device summary

Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
V
(max) 1.25 V
F
DO-41
STTH108
1 A
800 V
October 2009 Doc ID 9342 Rev 3 1/6
www.st.com
6
Characteristics STTH108

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit
V
V
(RMS)
I
F(AV)
Repetitive peak reverse voltage 800 V
RRM
Voltage rms 560 V
Average forward current
SMA T
DO-41 T
= 110 °C δ = 0.5
L
= 130 °C δ = 0.5
L
1A
SMA 20
I
T

Table 3. Thermal resistance

Forward Surge current t = 8.3 ms
FSM
Storage temperature range -50 to + 175 °C
stg
T
Maximum operating junction temperature 175 °C
j
DO-41 25
Symbol Parameter Value Unit
SMA 30
R
R

Table 4. Static electrical characteristics

Junction to lead
th(j-l)
Junction to ambient
th(j-a)
Lead length = 10 mm DO-41 45
Lead length = 10 mm DO-41 110
°C/W
Symbol Parameter Tests conditions Min. Typ. Max. Unit
Reverse leakage
I
R
current
V
Forward voltage drop
F
Tj = 25 °C
VR = 800 V
= 125 °C 1 50
T
j
T
= 25 °C
j
T
= 125 °C 0.89 1.25
j
= 1 A
I
F
5
1.65
A
µA
V
To evaluate the conduction losses use the following equation: P = 1.05 x I

Table 5. Dynamic electrical characteristics

Symbol Parameter Tests conditions Min. Typ. Max. Unit
t
rr
t
fr
V
FP
2/6 Doc ID 9342 Rev 3
+ 0.20 I
F(AV)
Reverse recovery time
Forward recovery time
Forward recovery voltage
F2(RMS)
T
= 25 °C
j
T
= 25 °C
j
= 25 °C
T
j
I
= 0.5 A,
F
= 0.25 A
I
rr
IR = 1 A
I
= 1 A,
F
/dt = 50 A/ms
dI
F
VFR = 1.1 x VFmax
= 1 A,
I
F
/dt = 50 A/ms
dI
F
75 ns
200 ns
12 V
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