Siemens TLE4270S, TLE4270G, TLE4270D Datasheet

5-V Low-Drop Fixed Voltage Regulator TLE 4270

Features

• Output voltage tolerance ≤ ± 2 %

• Low-drop voltage

• Integrated overtemperature protection

• Reverse polarity protection

• Input voltage up to 42 V

• Overvoltage protection up to 65 V (≤ 400 ms)

• Short-circuit proof

• Suitable for use in automotive electronics

• Wide temperature range

• Adjustable reset time

• ESD protection > 4000 V

P-TO220-5-11
(P-TO220-5-1)

Type Ordering Code Package

TLE 4270 Q67000-A9209-A903 P-TO220-5-11

P-TO220-5-12
(P-TO220-5-2)

TLE 4270 S Q67000-A9243-A904 P-TO220-5-12
TLE 4270 G Q67006-A9201-A901 P-TO263-5-1

▼ TLE 4270 Q67000-A9209-A801 P-TO220-5-1
▼ TLE 4270 S Q67000-A9243-A802 P-TO220-5-2

TLE 4270 G Q67006-A9201-A802 P-TO220-5-8

▼

P-TO263-5-1

TLE 4270 D Q67006-A9360 P-TO252-5-1

●

(P-TO220-5-8)

▼ Not for new design ● New type

Functional Description

This device is a 5-V low-drop fixed-voltage regula tor.
The maximum input voltage is 42 V (65 V, ≤ 400 ms).
Up to an input voltage of 26 V and for an output current
up to 550 mA it regulates the output volta ge within a
2 % accuracy. The short circuit protection limits the

P-TO252-5-1 (D-PAK)

output current of more than 650 mA. Th e device incorporates overvoltage protection
and temperature protection that disables the circuit at unpermissibly high temperatures.

Semiconductor Group 1 1998-11-01

Pin Configuration

AEP01923

ΙROGNDDQ

51

(top view)

TLE 4270

P-TO220-5-11

(P-TO220-5-1)

P-TO220-5-12

(P-TO220-5-2)

Ι

GNDDQ

RO

AEP02172

P-TO263-5-1

(P-TO220-5-8)

15

RO

51

Ι

GNDDQ

AEP01922

P-TO252-5-1 (D-PAK)

GND

15

ROΙ DQ

AEP02580

Figure 1

Pin Definitions and Functions
Pin Symbol Function

1 I Input; block to ground directly on the IC with ceramic capacitor
2RO Reset Output; the open collector output is connected to the 5 V output

via an integrated resistor of 30 kΩ.
3GNDGround; internally connected to heatsink.
4D Reset Delay; connect a capacitor to ground for delay time adjustment.
5Q 5-V Output; block to ground with 22 µF capacitor, ESR < 3 Ω.

Semiconductor Group 2 1998-11-01

TLE 4270

Application Description

V

The IC regulates an in put vol tage in the rang e of 5.5 V <

< 36 V to V

I

to 26 V it produces a regulated output current of more than 550 mA. Above 26 V the
save-operating-area protection allows operation up to 36 V with a regulated output
current of more than 300 mA. Overvoltage protection limits operation at 42 V. The
overvoltage protection hysteresis restores operation if the input voltage has dropped

V

below 36 V. A reset signal is generated for an output voltage of

< 4.5 V . The dela y for

Q

power-on reset can be set externally with a capacitor.

Design Notes for External Components

C

An input capacitor

is necessary for compensation of lin e influences. The resonant

I

circuit consisting of lead inductance and input capacitance can be damped by a resistor

C

of approx. 1 Ω in series with
the regulating circuit. Stability is guaranteed at values of

. An output capacitor CQ is necessary for the stability of

I

C

≥ 22 µF and an ESR of

Q

< 3 Ω.

=5.0V. Up

Qnom

Circuit Description

The control amplifier compares a reference voltage, which is kept highly accurate by
resistance adjustment, to a volt age that is proportion al to the output voltag e and drives
the base of a series transistor via a buffer. Saturation control as a function of the load
current prevents any over-saturation of the power element.

C

If the output voltage decreases below 4.5 V, an external capacitor
discharged by the reset generator. If the volt age on this capacitor drops below

on pin 4 (D) will be

D

V

DRL

, a

reset signal is generated o n pin 2 (R O), i. e. res et ou tput i s se t low . If t he ou tput voltage

C

rises above 4.5 V,
the voltage on the capacitor reaches

will be charged with constant current. After the power-on-reset time

D

V

and the reset output will be set high again. The

DU

value of the power-on-reset time can be set within a wide range depending of the

C

capacitance of

.

D

The IC also incorporates a number of internal circuits for protection against:

• Overload

• Overvoltage

• Overtemperature

• Reverse polarity

Semiconductor Group 3 1998-11-01

TLE 4270

Input

1

Adjustment

Temperature

Sensor

Bandgap

Reference

Control

Amplifier

+

-

3

GND

Buffer

Saturation

Control and

Protection

Circuit

Reset

Generator

5

Output

2

Reset
Output

4

Reset
Delay

AEB01924

Figure 2
Block Diagram

Semiconductor Group 4 1998-11-01

Absolute Maximum Ratings

T

= – 40 to 150 °C

j

Parameter Symbol Limit Values Unit Notes

min. max.

Input

TLE 4270

Voltage
Voltage
Current

Reset Output

Voltage
Current

Reset Delay

Voltage
Current

Output

Voltage
Current

V
V
I

V
I

V
I

V
I

I
I

I

R

R

D

D

Q

Q

– 42 42

65

– 0.3 7 V

– 0.3 7 V

– 1.0 16 V

V
V

t ≤ 400 ms

internally limited

Internally limited

Internally limited

Internally limited

Ground

Current

I

GND

– 0.5 – A –

Temperat ures

Junction temperature
Storage temperature

T

j

T

stg

– 50

150
150

°C
°C

–

Optimum reliability and life time are guaranteed if the junction temperature does not
exceed 125 °C in operating mode. Operation at up to the maximum junction temperature
of 150 °C is possible in principle. Note, however, that operation at the maximum
permitted ratings could affect the reliability of the device.

Semiconductor Group 5 1998-11-01

Operating Range

Parameter Symbol Limit Values Unit Notes

min. max.

TLE 4270

Input voltage

Junction temperature

V
T

I

j

642V–

– 40 150 °C–

Thermal Resistance

Junction ambient

R

thja

–6570K/W

K/W TO263, TO252

Junction case R

Z

thjc

thjc

–32K/W

K/W

t < 1ms

(TO-220/263
Packages)

1)

Soldered in, min. footprint

Characteristics

V

= 13.5 V; – 40 °C ≤ Tj= ≤ 125 °C (unless otherwise specified)

I

Parameter Symbol Limit Values Unit Test Condition

min. typ. max.

Output voltage

V

Q

4.90 5.00 5.10 V 5 mA≤ IQ≤ 550 mA;

V

6 V ≤

≤ 26 V

I

1)

Output voltage

Output current

V

I

Qmax

Q

4.90 5.00 5.10 V 26 V ≤ VI≤ 36 V;

I

≤ 300 mA

Q

650 850 – mA VQ = 0 V

limiting
Current

I

q

–11.5mAIQ = 5 mA

consumption

I

= II − I

q

Current

Q

I

q

–5575mAIQ = 550 mA

consumption

I

= II– I

q

Current

Q

I

q

–7090mAIQ = 550 mA; VI = 5 V

consumption

I

= II– I

q

Drop voltage

Semiconductor Group 6 1998-11-01

Q

V

dr

– 350 700 mV IQ = 550 mA

1)