Siemens TLE4270S, TLE4270G, TLE4270D Datasheet

Features
• Output voltage tolerance ≤ ± 2 %
• Low-drop voltage
• Integrated overtemperature protection
• Reverse polarity protection
• Input voltage up to 42 V
• Overvoltage protection up to 65 V ( 400 ms)
• Short-circuit proof
• Suitable for use in automotive electronics
• Wide temperature range
• Adjustable reset time
• ESD protection > 4000 V
P-TO220-5-11 (P-TO220-5-1)
Type Ordering Code Package
TLE 4270 Q67000-A9209-A903 P-TO220-5-11
P-TO220-5-12 (P-TO220-5-2)
TLE 4270 S Q67000-A9243-A904 P-TO220-5-12 TLE 4270 G Q67006-A9201-A901 P-TO263-5-1
TLE 4270 Q67000-A9209-A801 P-TO220-5-1TLE 4270 S Q67000-A9243-A802 P-TO220-5-2
TLE 4270 G Q67006-A9201-A802 P-TO220-5-8
P-TO263-5-1
TLE 4270 D Q67006-A9360 P-TO252-5-1
(P-TO220-5-8)
Not for new design New type
Functional Description
This device is a 5-V low-drop fixed-voltage regula tor. The maximum input voltage is 42 V (65 V, ≤ 400 ms). Up to an input voltage of 26 V and for an output current up to 550 mA it regulates the output volta ge within a 2 % accuracy. The short circuit protection limits the
P-TO252-5-1 (D-PAK)
output current of more than 650 mA. Th e device incorporates overvoltage protection and temperature protection that disables the circuit at unpermissibly high temperatures.
Semiconductor Group 1 1998-11-01
Pin Configuration
AEP01923
ΙROGNDDQ
51
(top view)
TLE 4270
P-TO220-5-11
(P-TO220-5-1)
P-TO220-5-12
(P-TO220-5-2)
Ι
GNDDQ
RO
AEP02172
P-TO263-5-1
(P-TO220-5-8)
15
RO
51
Ι
GNDDQ
AEP01922
P-TO252-5-1 (D-PAK)
GND
15
ROΙ DQ
AEP02580
Figure 1
Pin Definitions and Functions Pin Symbol Function
1 I Input; block to ground directly on the IC with ceramic capacitor 2RO Reset Output; the open collector output is connected to the 5 V output
via an integrated resistor of 30 kΩ. 3GNDGround; internally connected to heatsink. 4D Reset Delay; connect a capacitor to ground for delay time adjustment. 5Q 5-V Output; block to ground with 22 µF capacitor, ESR < 3 Ω.
Semiconductor Group 2 1998-11-01
TLE 4270
Application Description
V
The IC regulates an in put vol tage in the rang e of 5.5 V <
< 36 V to V
I
to 26 V it produces a regulated output current of more than 550 mA. Above 26 V the save-operating-area protection allows operation up to 36 V with a regulated output current of more than 300 mA. Overvoltage protection limits operation at 42 V. The overvoltage protection hysteresis restores operation if the input voltage has dropped
V
below 36 V. A reset signal is generated for an output voltage of
< 4.5 V . The dela y for
Q
power-on reset can be set externally with a capacitor.
Design Notes for External Components
C
An input capacitor
is necessary for compensation of lin e influences. The resonant
I
circuit consisting of lead inductance and input capacitance can be damped by a resistor
C
of approx. 1 Ω in series with the regulating circuit. Stability is guaranteed at values of
. An output capacitor CQ is necessary for the stability of
I
C
22 µF and an ESR of
Q
< 3 .
=5.0V. Up
Qnom
Circuit Description
The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a volt age that is proportion al to the output voltag e and drives the base of a series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element.
C
If the output voltage decreases below 4.5 V, an external capacitor discharged by the reset generator. If the volt age on this capacitor drops below
on pin 4 (D) will be
D
V
DRL
, a
reset signal is generated o n pin 2 (R O), i. e. res et ou tput i s se t low . If t he ou tput voltage
C
rises above 4.5 V, the voltage on the capacitor reaches
will be charged with constant current. After the power-on-reset time
D
V
and the reset output will be set high again. The
DU
value of the power-on-reset time can be set within a wide range depending of the
C
capacitance of
.
D
The IC also incorporates a number of internal circuits for protection against:
• Overload
• Overvoltage
• Overtemperature
• Reverse polarity
Semiconductor Group 3 1998-11-01
TLE 4270
Input
1
Adjustment
Temperature
Sensor
Bandgap
Reference
Control
Amplifier
+
-
3
GND
Buffer
Saturation
Control and
Protection
Circuit
Reset
Generator
5
Output
2
Reset Output
4
Reset Delay
AEB01924
Figure 2 Block Diagram
Semiconductor Group 4 1998-11-01
Absolute Maximum Ratings
T
= – 40 to 150 °C
j
Parameter Symbol Limit Values Unit Notes
min. max.
Input
TLE 4270
Voltage Voltage Current
Reset Output
Voltage Current
Reset Delay
Voltage Current
Output
Voltage Current
V V I
V I
V I
V I
I I
I
R
R
D
D
Q
Q
– 42 42
65
– 0.3 7 V
– 0.3 7 V
– 1.0 16 V
V V
t 400 ms
internally limited
Internally limited
Internally limited
Internally limited
Ground
Current
I
GND
– 0.5 A
Temperat ures
Junction temperature Storage temperature
T
j
T
stg
– 50
150 150
°C °C
Optimum reliability and life time are guaranteed if the junction temperature does not exceed 125 °C in operating mode. Operation at up to the maximum junction temperature of 150 °C is possible in principle. Note, however, that operation at the maximum permitted ratings could affect the reliability of the device.
Semiconductor Group 5 1998-11-01
Operating Range
Parameter Symbol Limit Values Unit Notes
min. max.
TLE 4270
Input voltage
Junction temperature
V T
I
j
642V
– 40 150 °C–
Thermal Resistance
Junction ambient
R
thja
–6570K/W
K/W TO263, TO252
Junction case R
Z
thjc
thjc
–32K/W
K/W
t < 1ms
(TO-220/263 Packages)
1)
Soldered in, min. footprint
Characteristics
V
= 13.5 V; – 40 °C ≤ Tj= 125 °C (unless otherwise specified)
I
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Output voltage
V
Q
4.90 5.00 5.10 V 5 mAIQ≤ 550 mA;
V
6 V
26 V
I
1)
Output voltage
Output current
V
I
Qmax
Q
4.90 5.00 5.10 V 26 V VI≤ 36 V;
I
300 mA
Q
650 850 mA VQ = 0 V
limiting Current
I
q
–11.5mAIQ = 5 mA
consumption
I
= II I
q
Current
Q
I
q
–5575mAIQ = 550 mA
consumption
I
= II– I
q
Current
Q
I
q
–7090mAIQ = 550 mA; VI = 5 V
consumption
I
= II– I
q
Drop voltage
Semiconductor Group 6 1998-11-01
Q
V
dr
350 700 mV IQ = 550 mA
1)
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