Siemens TLE4266G Datasheet
TLE 4266
5-V Low-Drop Voltage Regulator
Features
● Output voltage tolerance ≤± 2%
● Very low current consumption
● Low-drop voltage
● Overtemperature protection
● Reverse polarity proof
● Wide temperature range
● Suitable for use in automotive electronics
● Inhibit
Type Ordering Code Package
P-SOT223-4-2
TLE 4266
Bipolar IC
TLE 4266 G Q67006-A9152 P-SOT223-4-2
▼
▼ New type
Functional Description
TLE 4266 G is a 5 V low-drop voltage regulator in a P-SOT223-4-2 SMD package. The
IC regulates an input voltage
in the range of 5.5 V < Vi < 45 V to V
i
= 5 V. The
Qrated
V
maximum output current is more than 120 mA. The IC can be switched off via the inhibit
input, which causes the current consumption to drop below 10 µA. The IC is shortcircuitproof and incorporates temperature protection that disables the IC an overtemperature.
Dimensioning Information on External Components
C
The input capacitor
approx. 1 Ω in series with
be clamped. The output capacitor
circuit. Stability is guaranteed at values
is necessary for compensating line influences. Using a resistor of
i
C
, the oscillating of input inductivity and input capacitance can
i
C
is necessary for the stability of the regulating
Q
C
≥ 10 µF and an ESR ≤ 10 Ω within the
Q
operating temperature range.
Semiconductor Group 1
11.96
Pin Configuration
(top view)
TLE 4266
Pin Definitions and Functions
Pin Symbol Function
1
V
I
Input voltage; block to ground directly at the IC with a ceramic
capacitor.
2 Inh Inhibit; low-active input.
3
V
Q
5-V output voltage; block to ground with a ≥ 10 µF capacitor.
4 GND Ground
Semiconductor Group 2
TLE 4266
Circuit Description
The control amplifier compares a reference voltage, which is kept highly accurate by
resistance adjustment, to a voltage that is proportional to the output voltage and drives
the base of the series transistor via a buffer. Saturation control as a function of the load
current prevents any oversaturation of the power element. The IC also incorporates a
number of internal circuits for protection against:
● Overload,
● Overtemperature,
● Reverse polarity.
Block Diagram
Semiconductor Group 3
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