Siemens TLE4207GL, TLE4207G Datasheet

1-A Dual-HBD (Dual-Half-Bridge Driver) TLE 4207
Overview
Features
• Optimized for DC motor management applications
• Very low current consumption in stand-by (Inhibit) mode
• Low saturation voltage
• Output protected against short circuit
• Error flag diagnosis
• Overvoltage lockout and diagnosis
• Undervoltage lockout
• CMOS/TTL compatible inputs with hysteresis
• No crossover current
• Internal clamp diodes
• Overtemperature protection with hysteresis and diagnosis
• Enhanced power P-DSO-Package
; typ.1.2 V total @ 25 °C; 0.4 A
P-DSO-14-4
P-DSO-20-6
Type Ordering Code Package
TLE 4207 G Q67006-A9275 P-DSO-14-4 TLE 4207 GL on request P-DSO-20-6
Description
The TLE 4207 is a fully protected Dual-Half-Bridge-Driver designed specially for automotive and industrial motion control applications.
The part is built using the Siemens bipolar high voltage power technology DOPL. The actuator (DC motor) can be connec ted direct between the halfbridges. Operation
modes forward (cw), reverse (ccw), brake and high impedance are invoked from a standard interface. The standard enhanced power P-DSO-14 package meets the application requirements and saves PCB-board space and costs.
Furthermore the built i n features like diagnosis, over- and undervoltage -lockout, short­circuit-protection, over-temperature-protection and the very low quiescent current in stand-by mode will open a wide range of automotive and industrial applications.
Semiconductor Group 1 1998-02-01
TLE 4207
1
V
S
OUT2
GND GND GND
IN2
INH
2 3 4 5 6 7
TLE
4207G
AEP02303
14 13 12
11
10
N.C. OUT1 GND GND GND IN1
9 8
EF
Figure 1 Pin Configuration (top view) Pin Definitions and Functions
Pin No. P-DSO-14-4
11
Pin No. P-DSO-20-6
Symbol Function
V
S
Power supply voltage;
positive reference potential for blocking capacitor
V
OUT2 OUT1
N.C. N.C. GND GND GND GND GND GND GND GND
N.C. N.C.
IN2 IN1
1
S
2 3 4 5 6 7 8 9 10
TLE
4207GL
20 19 18 17 16 15 14 13 12 11 EFINH
AEP02304
N.C.
22OUT2Power-output 2; full short circuit protected;
with integrated clamp diodes
3, 4, 5, 10, 11, 12
4, 5, 6, 7, 14, 15, 16, 17
GND Ground;
negative reference potential for blocking
capacitor 69IN2Input channel 2; controls OUT2 (not inverted) 710INHInhibit input; low = IC in stand-by 811EFError Flag output; open collector; low = error 912IN1Input channel 1; controls OUT1 (not inverted) 13 19 OUT1 Power output 1; full short circuit protected;
with integrated clamp diodes 14 3, 8,
N.C. Not connected
13, 18, 20
Semiconductor Group 2 1998-02-01
INH
EF
IN1
IN2
TLE 4207
V
S
1
7
8
9
0 1
6
1 1 1
Inhibit
Fault-Detection
IN2 OUT2
OUT1IN1INH
XXZZ
00
0
1 0
1
11
LL HL LH HH
DRV1
DRV2
13
2
OUT1
OUT2
4207GTLE
Figure 2 Block Diagram
3, 4, 5, 10, 11, 12
GND
AEB02080
Semiconductor Group 3 1998-02-01
Functional Truth Table INH IN1 IN2 OUT1 OUT2 Mode
0 X X Z Z Stand-By
TLE 4207
1 1 1 1
0 0 1 1
0 1 0 1
L
L
H
H
L H L H
Brake LL CW CCW Brake HH
IN: 0 = Logic LOW OUT: Z = Output in tristate condition
1 = Logic HIGH L = Output in sink condition
X = don’t care H = Output in source condition
Diagnosis EF Error
1 0 0
no error over temperature over voltage
Semiconductor Group 4 1998-02-01
Electrical Characteristics
Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks
min. max.
Voltages
TLE 4207
Supply voltage
Supply voltage Logic input voltages
(IN1; IN2; INH) Logic output voltage (EF)
Currents
Output current (cont.) Output current (peak) Output current (diode) Output current (EF)
Temperatures
Junction temperature Storage temperature
V
S
V
S
V
I
V
EF
I
OUT1-2
I
OUT1-2
I
OUT1-2
I
OUT1-2
T
j
T
stg
– 0.3 45 V – – 1 V t < 0.5 s; IS > – 2 A – 5 20 V 0 V < VS < 45 V
– 0.3 20 V 0 V < VS < 45 V
A internally limited – A internally limited –1 1 A – –2 5 mA
– 40 150 °C– – 50 150 °C–
Thermal Resistances
Junction pin Junction ambient
R R
thj-pin thjA
25 K/W measured to pin 5 –65K/W
Note: Maximum ratings are abso lute ratings; exceeding any one of thes e values may
cause irreversible damage to the integrated circuit.
Semiconductor Group 5 1998-02-01
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