Siemens SFH6315T, SFH6316T, SFH6343T Datasheet

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SFH6315T
SFH6316T
SFH6343T

NE

FEATURES

• Surface Mountable

• Industry Standard SOIC-8 Footprint

• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes

• Isolation Voltage, 2500 V

• Very High Common Mode Transient Immunity:
15000 V/µs at V

• High Speed: 1 Mb/s

• TTL Compatible

• Guaranteed AC and DC Performance Over
Temperature: 0°C to 70°C

• Open Collector Output

• Pin Compatible with HP Optocouplers
SFH6315T—HCPL0500
SFH6316T—HCPL0501
SFH6343T—HCPL0453

• Available in Tape and Reel (suffix T)

APPLICATIONS

• Line Receivers

• Logic Ground Isolation

• Analog Signal Ground Isolation

• Replace Pulse Transformers

DESCRIPTION

The SFH6315T/16T/43T, high speed optocouplers, each
consists of a GaAlAs infrared emitting diode, optically
coupled with an integrated photodetector and a high
speed transistor. The photodetector is junction isolated
from the transistor to reduce miller capacitance effects.
The open collector output function allows circuit design­ers to adjust the load conditions when interfacing with
different logic systems such as TTL, CMOS, etc.

Because the SFH6343T has a Faraday shield on the
detector chip, it can also reject and minimize high input
to output common mode transient voltages. There is no
base connection, further reducing the potential electrical
noise entering the package.

The SFH6315T/16T/43T are packaged in industry stan­dard SOIC-8 packages and are suitable for surface
mounting.

Absolute Maximum Ratings
Emitter (GaAlAs)

Reverse Voltage........................................................... 3 V

DC Forward Current................................................25 mA

Surge Forward Current ................................................1 A

tp≤1 µs, 300 pulses/sec.

Total Power Dissipation (T

RMS

=1500 V Guaranteed (SFH6343T)

CM

≤70°C) ........................45 mW

A

Package Dimensions in Inches (mm)

.240

(6.10)

.004 (.10)
.008 (.20)

Absolute Maximum Ratings (continued)
Detector (Si Photodiode + Transistor)

Supply Voltage ............................................................–0.5 to 30 V

Output Voltage ..........................................................–0.5 to ≥20 V

Output Current ...................................................................... 8 mA

Total Power Dissipation (T

Package

Isolation Test Voltage

between emitter and detector ............................. 2500 VAC

(refer to climate DIN 40046, part 2, Nov. 74)

Pollution Degree (DIN VDE0110) .................................................2

Creepage ............................................................................≥4 mm

Clearance............................................................................≥4 mm

Comparative Tracking Index

per DIN IEC 112/VDE 0303, part 1 .......................................175

Isolation Resistance

V

IO

V

IO

Storage Temperature Range.............................. –55°C to +150°C

Ambient Temperature Range............................. –55°C to +100°C

Junction Temperature ..........................................................100°C

Soldering Temperature (t=10 sec. max.) .............................260°C

Dip soldering: distance to seating plane ≥1.5 mm

Specifications subject to change.

HIGH SPEED OPTOCOUPLER

NC

1

A

2

3

.120±.002
(3.05±.05)

Pin 1

=500 V, T
=500 V, T

.154±.002

C

L

(3.91±.05)

.016
(.41)

.192±.005
(4.88±.13)

.050 (1.27) typ.

.021 (.53)

TOLERANCE: ±.005 (unless otherwise noted)

≤70°C)................................... 100 mW

A

=25°C, R

A

ISOL

=100°C, R

A

ISOL

K

4

NC

NC

1

A

2

3

K

4

NC

.015±.002

(.38±.05)

.008 (.20)

.020±.004

(.15±.10)

2 plcs.

(Note 2) .............................≥1012 Ω

(Note 2)............................≥1011 Ω

SFH6315T/6T

SFH6315/6

SFH6343T

SFH6343

40°

5° max.

R.010
(.25) max.

8

V

CC

Base V

7

C

6

E

5

8

V

CC

NC

7

C

6

E

5

7°

.058±.005

(1.49±.13)

.125±.005

(3.18±.13)

Lead
Coplanarity
±.0015 (.04)
max.

B

RMS

Semiconductor Group 4–44

This document was created with FrameMaker 4.0.3

10.95

Electrical Characteristics
Over recommended temperature (T

Parameter

Input Forward
Voltage

Input Reverse
Current

Input Capacitance C

Temperature
Coefficient of
Forward Voltage

Logic Low Supply
Current

Logic High Supply
Current

Logic Low Output
Voltage

Logic High Output
Current

Transistor DC
Current Gain

Capacitance
(Input-Output)

Current Transfer Ra­tio

Sym­bol

V

F

I

R

IN

∆V

F

----------

∆T

A

I

CCL

I

CCH

VOLSFH6315T

I

OH

h

FE

C

I-O

CTR SFH6315T 7 16 50

=0°C to 70°C) unless otherwise specified. See note 6. *All typical values at TA=25°C.

A

Device Min. Typ.* Max. Units Test Conditions Note

SFH6316T
SFH6343T 0.15

SFH6316T
SFH6343T

Figure 1. Test circuit for switching times

I

F

0

V

O

1.5 V

t

PHL

1.5 V

t

PLH

1.8

1.6

1.9

0.5 10 µAVR=3 V

75 pF f=1 MHz, VF=0 V
–1.7 mV/°CIF=16 mA

100 µAIF=16 mA, VO=Open, VCC=15 V

0.001 1

2

0.4

0.15

0.5 IO=0.8 mA

0.4

0.5 I

0.003 0.5

0.01 1 TA=25°CVO=VCC=15.0 V

50 TA=0–70°CVO=VCC=15.0 V

150 VO=5 V, IO=3 mA

0.4 pF f=1 MHz 6

517 VO=0.5 V

19 35 50

15 36 VO=0.5 V

10% Duty Cycle
1/f<100 µs

5 V

Pulse
Generator
ZO=50 Ω

V

tr=5 ns

OL

I

=Monitor

F

TA=25°CIF=16 mA

V

TA=25°C

µ

A

TA=25°CIO=1.1 mA

V

TA=25°CIO=3.0 mA

V

TA=25°CVO=VCC=5.5 V

µA

TA=25°CVO=0.4 V

%

TA=25°CVO=0.4 V

%

1

I

F

2

3

4

R

m

IF=0 mA, VO=Open, VCC=15 V

=2.4 mA

O

8

7

6

5

IF=16 mA,
VCC=4.5 V

IF=0 mA

IF=16 mA,
VCC=4.5 V

R

0.1 µF

L

1, 6

+5 V

V

O

CL=15pF

Semiconductor Group 4–45

SFH6315T/6316T/6343T