Siemens SFH6315, SFH6316, SFH6343 Datasheet
)
(
W
SFH6315
SFH6316
SFH6343
NE
FEATURES
• Surface Mountable
• Industry Standard SOIC-8 Footprint
• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes
• Isolation V oltage, 2500 V
RMS
• Very High Common Mode Transient Immunity:
15000 V/ µ s at V
=1500 V Guaranteed (SFH6343)
CM
• High Speed: 1 Mb/s
• TTL Compatible
• Guaranteed AC and DC Performance Over
Temperature: 0 ° C to 70 ° C
• Open Collector Output
• Pin Compatible with HP Optocouplers
SFH6315—HCPL0500
SFH6316—HCPL0501
SFH6343—HCPL0453
APPLICATIONS
• Line Receivers
• Logic Ground Isolation
• Analog Signal Ground Isolation
• Replace Pulse Transformers
DESCRIPTION
The SFH6315/16/43, high speed optocouplers, each
consists of a GaAlAs infrared emitting diode, optically
coupled with an integrated photodetector and a high
speed transistor. The photodetector is junction isolated
from the transistor to reduce miller capacitance effects.
The open collector output function allows circuit designers to adjust the load conditions when interfacing with
different logic systems such as TTL, CMOS, etc.
Because the SFH6343 has a Faraday shield on the
detector chip, it can also reject and minimize high input
to output common mode transient voltages. There is no
base connection, further reducing the potential electrical
noise entering the package.
The SFH6315/16/43 are packaged in industry standard
SOIC-8 packages and are suitable for surface mounting.
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage...........................................................3 V
DC Forward Current................................................25 mA
Surge Forward Current................................................1 A
tp ≤
1 µ s, 300 pulses/sec.
Total Power Dissipation (T
≤
70 ° C).........................45 mW
A
Package Dimensions in Inches (mm)
.120±.002
(3.05±.05)
.240
6.10)
Pin 1
.004 (.10)
.008 (.20)
Absolute Maximum Ratings (continued)
Detector(Si Photodiode + Transistor)
Supply Voltage............................................................–0.5 to 30 V
Output Voltage..........................................................–0.5 to ≥
Output Current.......................................................................8 mA
Total Power Dissipation (T
Package
Isolation Test Voltage
between emitter and detector ..............................2500 VAC
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE0110).................................................2
Creepage............................................................................ ≥
Clearance............................................................................ ≥
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1.......................................175
Isolation Resistance
V
=500 V, T
IO
V
=500 V, T
IO
Storage Temperature Range.............................. –55 ° C to +150 ° C
Ambient Temperature Range............................. –55 °
Junction Temperature...........................................................100 °
Soldering Temperature (t=10 sec. max.)..............................260 °
Dip soldering: distance to seating plane ≥
Specifications subject to change.
HIGH SPEED OPTOCOUPLER
SFH6315/6
NC
.192±.005
(4.88±.13)
.050 (1.27) typ.
.021 (.53)
=25 ° C, R
A
=100 ° C, R
A
1
A
2
3
K
4
NC
SFH6343
NC
NC
1
A
2
3
K
4
5° max.
R.010
(.25) max.
.154±.002
C
L
(3.91±.05)
.016
(.41)
.015±.002
(.38±.05)
.008 (.20)
.020±.004
(.15±.10)
2 plcs.
TOLERANCE: ±.005 (unless otherwise noted
70 ° C)................................... 100 mW
≤
A
(Note 2).............................. ≥ 10
ISOL
(Note 2)............................. ≥ 10
ISOL
1.5 mm
40°
8
V
CC
7
Base V
B
6
C
E
5
8
V
CC
7
NC
C
6
E
5
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
4 mm
4 mm
C to +100 ° C
20 V
RMS
12
Ω
11
Ω
C
C
1
Electrical Characteristics
F
A
V
F
Over recommended temperature (T
=0 °
C to 70 ° C) unless otherwise specified. See note 6 . * All typical values at T
A
=25 ° C.
A
Parameter
Input Forward
Voltage
Input Reverse
Current
Input Capacitance C
Temperature
Coefficient of
Forward Voltage
Logic Low Supply
Current
Logic High Supply
Current
Logic Low Output
Voltage
Logic High Output
Current
Transistor DC
Current Gain
Symbol
V
F
I
R
IN
∆V
----------
∆T
I
CCL
I
CCH
V
OL
I
OH
h
FE
Device Min. Typ.* Max. Units Test Conditions Note
1.6
1.8
V
T
=25 ° CI
A
=16 mA
F
1.9
0.5 10
75 pF f=1 MHz, V
–1.7 mV/ ° CI
100
0.001 1
SFH6315
0.15
SFH6316
SFH6343 0.15
0.003 0.5
0.01 1 T
150 V
µ AV
µ AI
=3 V
R
=16 mA
F
=16 mA, V
F
T
=25 ° C
A
=0 V
F
O
µ A
2
0.4
T
=25 ° CI
A
V
0.5 I
0.4
T
=25 ° CI
A
V
0.5 I
T
=25 ° CV
A
µ A
50 T
=25 ° CV
A
=0–70 ° CV
A
=5 V, I
O
=3 mA
O
=Open, V
I
=0 mA, V
F
=1.1 mA
O
=0.8 mA
O
=3.0 mA
O
=2.4 mA
O
=V
O
CC
=V
O
CC
=V
O
CC
=15 V
CC
=Open, V
O
=5.5 V
=15.0 V
=15.0 V
CC
I
=16 mA,
F
V
=4.5 V
CC
I
=0 mA
F
=15 V
Capacitance
C
I-O
0.4 pF f=1 MHz 6
(Input-Output)
Current Transfer Ra-
tio
CTR SFH6315 7 16 50
517 V
SFH6316
19 35 50
SFH6343
15 36 V
T
=25 ° CV
A
%
T
=25 ° CV
A
=0.4 V
O
=0.5 V
O
=0.4 V
O
=16 mA,
I
F
V
=4.5 V
CC
%
=0.5 V
O
1, 6
Figure 1. Test circuit for switching times
I
F
0
V
5 V
OL
O
1.5 V
t
PHL
t
PLH
1.5 V
10% Duty Cycle
1/f<100 µs
Pulse
Generator
ZO=50 Ω
tr=5 ns
I
=Monitor
F
L
+5 V
V
O
CL=15p
1
I
F
2
8
7
R
3
4
R
m
6
0.1 µF
5
SFH6315/6316/6343
2
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