Siemens SFH620A Datasheet

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SFH620A

5.3 kV TRIOS

FEATURES

• High Current Transfer Ratios
at 10 mA: 40–320%
at 1 mA: 45% typical (>13)

• Low CTR Degradation

• Good CTR Linearity Depending on Forward Current

• Isolation Test Voltage, 5300 VAC

• High Collector-Emitter Voltage, V

RMS

CEO

=70 V

• Low Saturation Voltage

• Fast Switching Times

• Field-Effect Stable by TRIOS (TRansparent IOn
Shield)

• Temperature Stable

• Low Coupling Capacitance

• End-Stackable, .100"(2.54 mm) Spacing

• High Common-Mode Interference Immunity
(Unconnected Base)

• Underwriters Lab File #52744

• VDE 0884 Available with Option 1

• SMD Option, See SFH6206 Data Sheet

DESCRIPTION

The SFH620A features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis­tor detector, and is incorporated in a plastic DIP-4 pack­age.

The coupling devices are designed for signal transmission
between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are

achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 V

RMS

or DC.

Specifications subject to change.

Package Dimensions in Inches (mm)

268 (6.81)
255 (6.48)

4°

Typ.

.022 (.56)
.018 (.46)

12

43

.190 (4.83)
.179 (4.55)

.045 (1.14)
.030 (.76)

.150 (3.81)
.130 (3.30)

1.00 (2.54)
Typ.

Pin One I.D.

.040 (1.02)
.030 (.76 )

Maximum Ratings
Emitter

Reverse Voltage...................................................................6 V

DC Forward Current..................................................... ±

Surge Forward Current (t

Total Power Dissipation ................................................100 mW

Detector

Collector-Emitter Voltage...................................................70 V

Emitter-Collector Voltage......................................................7 V

Collector Current.............................................................50 mA

Collector Current (t

Total Power Dissipation ................................................150 mW

Package

Isolation Test Voltage between Emitter and

Detector, refer to Climate DIN 40046,

part 2, Nov. 74.................................................5300 VAC

Creepage........................................................................ ≥ 7 mm

Clearance....................................................................... ≥

Insulation Thickness between Emitter and Detector... ≥
Comparative Tracking Index

per DIN IEC 112/VDE0 303, part 1..................................175

Isolation Resistance

V

=500 V, T

IO

V

=500 V, T

IO

=25 ° C.................................................. ≥ 10

A

=100 ° C................................................ ≥ 10

A

Storage Temperature Range ..............................–55 to +150 ° C

Ambient Temperature Range..............................–55 to +100 °

Junction Temperature......................................................100 °

Soldering Temperature (max. 10 s. Dip Soldering

Distance to Seating Plane ≥

P

≤

1 ms) ...........................................100 mA

P



OPTOCOUPLER

AC V OL T A GE INPUT

Anode/

Anode

1

2

.305

(7.75)

3°–9°

Cathode
Cathode/

10 µ s).................................. ± 2.5 A

≤

1.5 mm) ........................... 260 ° C

10°
Typ.

.012 (.30)
.008 (.20)

4

3

Collector

Emitter

.135 (3.43
.115 (2.92

60 mA

7 mm

0.4 mm

RMS

12
11

Ω
Ω

C
C

5–252

Characteristics (T

Description Symbol Unit Condition
Emitter

Forward Voltage V
Capacitance C
Thermal Resistance R

Detector

Capacitance C
Thermal Resistance R

Package

Collector-Emitter Saturation Voltage V

Coupling Capacitance C

Note: 1. Still air, coupler soldered to PCB or base.

Current T ransfer Ration (I

Description -1 -2 -3

I

/ I

(I

= ± 10 mA) 40–125 63–200 100–320 %

C

F

F

I

/ I

(I

= ± 1 mA) 30 (>13) 45 (>22) 70 (>34) %

C

F

F

Collector-Emitter Leakage Current, I
V

=10 V

CE

=25 ° C)

A

F

0

thJA

CE

thJA

CESAT

C

/I

at V

C

F

=5 V) and Collector-Emitter Leakage Current by Dash Number

CE

CEO

2 ( ≤

1.25 ( ≤ 1.65) V I
50 pF V
750 K/W

6.8 pF V
500 K/W

0.25 ( ≤ 0.4) V I

0.2 pF

50) 2 ( ≤ 50) 5 ( ≤ 100) nA

= ± 60 mA

F

=0 V, f=1 MHz

R

=5 V, f=1 MHz

CE

=10 mA, I

F

=2.5 mA

C

Switching Times

Linear Operation (without saturation)

I

F

RL=75 Ω

I

C

47 Ω

I

=10 mA, V

F

Load Resistance R
Turn-on Time t
Rise Time t
Turn-off Time t
Fall Time t
Cut-off Frequency F

CC

=5 V , T

=25 ° C

A

L

ON

R

OFF

F

CO

V

=5 V

CC

75

3.0

2.0

2.3

2.0

Ω
µ s
µ s
µ s
µ s

250 kHz

5–253

SFH620A