SIEMENS A5 Repair Documentation

Page 1
A52, A55 & C55 IFX
Repair Documentation
V 1.10
Version Date Department Notes to change
V 1.00 09.052003 ICM MP CCQ GRM New document
V 1.10 11.08.2003 ICM MP CCQ GRM Document modified (A52)
V 1.10 Page 1of 45 ICM MP CCQ GRM A52/A55/C55 IFX
Company Confidential © Copyright Siemens AG
08/03
Page 2
Table of Contents:
1 LIST OF AVAILABLE LEVEL 2,5E PARTS C55 IFX .........................................4
2 REQUIRED EQUIPMENT FOR LEVEL 2,5E ...................................................... 5
3 REQUIRED SOFTWARE FOR LEVEL 2,5E C55 IFX.........................................5
4 RADIO PART DESCRIPTION............................................................................. 6
4.1 Introduction..................................................................................................... 6
4.2 Power Supply RF-Part .................................................................................... 7
4.3 Frequency generation .................................................................................... 7
4.3.1 Synthesizer: The discrete VCXO (26MHz)...........................................................................7
4.3.2 Synthesizer: LO1..................................................................................................................8
4.4 Antenna Switch / External Antenna Connector (electrical/mechanical only C55) 10
4.5 Frontendmodul (Electrical Antenna Switch) .............................................. 10
4.6 Receiver......................................................................................................... 11
4.6.1 Receiver: EGSM900/GSM1800 – Filter to Demodulator ...................................................11
4.6.2 IC Overview ........................................................................................................................13
4.7 Transmitter.................................................................................................... 15
4.7.1 Transmitter: Modulator and Limited Amplifier ....................................................................15
4.7.2 Transmitter: and Power Amplifier.......................................................................................16
5 LOGIC / CONTROL........................................................................................... 17
5.1 Overview of Hardware Structure ................................................................. 17
5.1.1 Logic Block Diagram ..........................................................................................................17
5.1.2 Block Diagram C55 IFX Control Part .................................................................................17
5.1.3 EGOLD+.............................................................................................................................18
5.1.4 SRAM .................................................................................................................................22
5.1.5 FLASH ................................................................................................................................22
5.1.6 SIM .....................................................................................................................................22
5.1.7 Vibration Motor ...................................................................................................................23
6 POWER SUPPLY..............................................................................................23
6.1 Power Supply ASIC ......................................................................................23
6.1.1 Power Supply Operating modes: .......................................................................................25
6.1.2 Power Supply Functions:....................................................................................................26
6.2 Battery ........................................................................................................... 33
6.3 Charging Concept......................................................................................... 34
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7 INTERFACES.................................................................................................... 37
7.1 Vibra............................................................................................................... 37
7.2 Earpiece......................................................................................................... 37
7.3 Microphone ................................................................................................... 38
7.4 Battery ........................................................................................................... 38
7.5 IO Connector with ESD protection.............................................................. 39
7.5.1 IO Connector – New Slim Lumberg ...................................................................................39
7.5.2 ESD Protection with EMI filter ............................................................................................40
7.6 SIM ................................................................................................................. 41
7.7 Display........................................................................................................... 41
8 ACOUSTIC........................................................................................................ 42
8.1 Microphone ................................................................................................... 42
8.1.1 Mechanical .........................................................................................................................42
8.1.2 Electrical .............................................................................................................................42
8.2 Earpiece/Loudspeaker ................................................................................. 43
8.2.1 Mechanical .........................................................................................................................43
8.2.2 Electrical .............................................................................................................................43
9 DISPLAY AND ILLUMINATION........................................................................ 44
9.1 Display........................................................................................................... 44
9.2 Illumination ...................................................................................................44
10 KEYBOARD ................................................................................................... 45
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Page 4
1 List of available level 2,5e parts C55 IFX
ID-No Type Board Name, Location Part-No.
D150 VCO HIT Transmitter_VCO L36820-L6097-D670 D1600 VCO IFX Transmitter_VCO L36820-L6109-D670 D171 IC HIT/IFX Egold+ L36810-G6149-D670 D1740 Filter IFX Ant_Switch_Diplexer L36197-F5006-F936 D1785 IC IFX Transceiver IC L36197-F5011-F334 D361 IC HIT/IFX ASIC L36145-J4682-Y43 D800 IC HIT Transceiver IC L36820-L6105-D670 D920 IC HIT PA_Comperator L36820-L6133-D670 R1507 Resistor IFX Temp_Resistor L36120-F4223-H R959 Resistor HIT Temp_Resistor L36120-F4223-H V1500 Diode IFX Capa_Diode L36840-D61-D670 V151 Diode HIT/IFX Diode_KB7 L36840-D5062-D670 V181 Diode HIT/IFX Diode_Battery_Interface L36702-A1051 V211 Transistor HIT/IFX Tran._Vibra L36830-C1097-D670 V220 Diode HIT/IFX Diode_Vibra L36851-Z9105-Z981 V222 Transistor HIT/IFX Trans_Light_ L36830-C1112-D670 V223 Transistor HIT Trans_Light_ L36840-C4004-D670 V361 Transistor HIT/IFX Tran._Charge L36830-C1110-D670 V850 Transistor HIT Tran._VCO_Switch L36820-C6047-D670 V920 Diode HIT Feedback_Diode L36840-D5049-D670 V921 Transistor HIT Tran._PA_Switch L36820-C6047-D670 V950 Transistor HIT Tran._26MHz_Ampl. L36840-C4049-D670 V951 Diode HIT Capa_Diode L36840-D61-D670 Z1500 Quartz IFX Oszillator_26MHz L36145-F260-Y17 Z1600 Filter IFX Transmitter_Filter L36145-K280-Y242 Z1700 IC IFX Power_Amplifier L36197-F5005-F487 Z171 Quartz HIT/IFX Quarz/Egold L36145-F102-Y8 Z211 Filter HIT/IFX Logic/IO_Interface L36197-F5000-F116 Z850 VCO HIT 1LO_VCO L36145-G100-Y96 Z851 Filter HIT Filter_BALUN L36145-K260-Y41 Z880 IC HIT Ant_Switch_Diplexer L36145-K280-Y257 Z900 IC HIT Power_Amplifier L36851-Z2002-A59 Z950 Quartz HIT Oszillator_26MHz L36145-F260-Y17
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2 Required Equipment for Level 2,5e
- GSM-Tester (CMU200 or 4400S incl. Options)
- PC-incl. Monitor, Keyboard and Mouse
- Bootadapter 2000/2002 (L36880-N9241-A200)
- Adapter cable for Bootadapter due to new Lumberg connector
- Troubleshooting Frame C55 (F30032-P209-A1)
- Power Supply
- Spectrum Analyser
- Active RF-Probe incl. Power Supply
- Oscilloscope incl. Probe
- RF-Connector (N<>SMA(f))
- Power Supply Cables
- Dongle (F30032-P28-A1) if USB-Dongle is used a special driver for NT is required
- BGA Soldering equipment
Reference: Equipment recommendation V1.2 (downloadable from the technical support page)
3 Required Software for Level 2,5e C55 IFX
- Windows NT Version4
- Winsui version1.43 or higher
- Software for GSM-Tester ( Cats(Acterna/Wiltek) or CMU-GO(Rohde&Schwarz) )
- Software for reference oscillator adjustment
- Internet unblocking solution
- Dongle driver for USB-Dongle if used with WIN NT4
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4 Radio Part Description
4.1 Introduction
The radio part is necessary to convert the GMSK-RF-signals from the antenna to the baseband and vice versa. In the receiving direction, the signals are split in the I- and Q-component and fed to the A/D-converter of the logic part. In the transmission direction, the GMSK-signal is generated with the Direct Modulator by modulation of the I- and Q-signals, which are generated in the baseband section. After the modulation the RF-signals are amplified by a buffer-limiter and, for the GSM900 path, filtered with a SAW-Filter. Finally, the power amplifier (PA) is attached to reach the output power.
Transmitter and Receiver are never active at the same time. Simultaneous reception in the EGSM 900 and GSM 1800 band is impossible as well as simultaneous transmission in both bands. However the monitoring band (monitoring timeslot) in the TDMA-frame can be chosen independently of the receiving or transmitting band (RX- and TX timeslot of the band).
The RF-part is designed for dualband operation (EGSM 900, GSM 1800) and consists of the following main components:
1. 26MHz reference crystal Z1500
2. TX-Filter in GSM section Z1600
3. Transmitter power amplifier RF9340 with integrated regulator Z1700
4. Front-End-Module including RX-/TX-switch and EGSM 900/GSM1800 receiver SAW-
filters D1740
5. Infineon Limiter/Buffer PMB2256 to amplify the RF signals from the modulator to
drive the PA D1600
6. Infineon Smarti DC2 PMB6256 with the following functionality D1785:
Integrated active part of the 26MHz crystal oscillator
PLL for local oscillator LO1
LO1-VCO
Direct conversion receiver with channel filtering
Direct Modulator
Active part of the reference oscillator including buffer
Control circuit for band switch
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V
VCC_
4.2 Power Supply RF-Part
The voltage regulator for the RF-part is located inside the ASIC D361.(see chapter 5.2).It generates the required 2,85V “RF-Voltages” named VCC2_8 and VCC_SYN. (VCC_SYN is also named VCC2 and behind R1451 VCC_OSC) The following components are supplied by:
VCC2_8
Limiter amplifier
The voltage regulator RFREG 1 is controlled by the signal SLEEPQ (RF_EN RFREG2 is controlled by he signal VCXOEN_UC connected to SLEEP1_N
. Both signals are provided by the EGOLD+ (SLEEPQ (GSM TDMA-Timer H16) /
H1)
VCXOEN_UC
Circuit diagram
(Miscellaneous R6)).
VCC_SYN
Modulators
RX mixers
VCO
PLL
26 MHz reference oscillator
(RF REG G2)),
(on/off Control
CC2_8
SYN
4.3 Frequency generation
4.3.1 Synthesizer: The discrete VCXO (26MHz)
The reference oscillator is a 26 MHz voltage controlled crystal oscillator. It has two main tasks:
It is used as reference for the synthesizer phase/frequency detector (Smarti internal circuit)
It gives the clock for the processor (E-Gold)
The main block is realized as an internal transistor cell with a Colpitts structure. The 26 MHz quartz crystal is connected to a tuning circuit that allows a fine-tuning of the frequency. A current mirror, acting as buffer and amplifier followed by a LC resonant circuit makes the signal to fit the E-Gold clock signal requirements. ON/OFF signal (VCC_OSC) comes from the ASIC via the resistor R1451. For temperature measurements of the VCXO a temperature resistance (R700) is used. The resistor is placed near the VCXO. The measurement result TVCXO is reported to the EGOLD+
(Analog Interface P3) via R138 as the signal TENV. The frequency of the reference oscillator
can be adjusted by the EGOLD+ via a PNM- modulated AFC-signal. The signal leaves the SMARTI as BB_SIN26M at pin 4 to be further used from the EGOLD+ (D171
The required voltage VCC_SYN is provided by the ASCI D361
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(functional T3)).
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Circuit diagram
to EGOLD+
from EGOLD
4.3.2 Synthesizer: LO1
The local oscillator (LO1) consists of a PLL inside the Smarti DC (D720), an external loop filter. The VCO is build in.
The first local oscillator is needed to generate frequencies which enables the transceiver IC to demodulate the receiver signal and to perform the channel selection in the TX part. The LO1/PLL part is switched on with PLLON (
). The PLL settings are programmed by the 3 wire bus RFCLK (pin 1), RFDATA (pin2)
F16)
and RFSTR ( times for GSM1800.
This LO1 frequency range
The required voltage VCC_SYN is provided by the ASIC D361
pin 5) from the EGOLD+ (D171 (GSM TDMA Timer
pin3). The LO frequency is 4 times the RX/TX frequency for EGSM 900 and 2
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Block diagram
Circuit diagram
External loopfilter
~
~
External loopfilter
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A52/A55/C55 IFX
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p
4.4 Antenna Switch / External Antenna Connector
(electrical/mechanical only C55)
The mechanical antenna switch for the differentiation between the internal and external antenna.
External
to / from
lexer
di
4.5 Frontendmodul (Electrical Antenna Switch)
EGSM900/GSM1800 <> Receiver/Transmitter
The frontend has two functions.
- to select the different GSM bands
- to switch between RX and TX mode
Inside the frontendmodul SAW filters are integrated in the RX paths. For dual band mode the FEM needs two supply voltages (VC1, VC2) that are directly provided by the Smarti DC (FEM1 and FEM2). The following logical table shows the different modes of the FEM.
Mode Selection Vc. 1 Vc.2 Vc.3
EGSM900 RX LOW LOW LOW EGSM900 TX HIGH LOW LOW GSM1800 RX LOW LOW LOW GSM1800 TX LOW HIGH LOW
GSM1900 RX LOW LOW HIGH GSM1900 TX LOW HIGH LOW
Two balanced SAW filters are integrated to have good stop-band attenuation in the GSM and the PCN RX paths.
Internal
Top View Block diagram
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A
Control Signals from Smarti
from
P
to Antenna
4.6 Receiver
4.6.1 Receiver: EGSM900/GSM1800 – Filter to Demodulator
From the antenna switch, up to the demodulator the received signal passes the following blocks to get the demodulated baseband signals for the EGOLD+:
Filter LNA
Inside Z650 Smarti Smarti Smarti
The EGSM900, GSM1800 filters are located inside the frontend module. The Filter
Filter: are centred to a frequency of 942,5MHz for EGSM900, 1847,5MHz for GSM1800.
The LNA´s (EGSM900/GSM1800) are located inside the Smarti. The LNA can be
LNA: switched in HIGH (On) and LOW (Off) mode and is controlled by the Smarti depending on EGOLD+ information.
Demodulator: The amplified RF signal is converted by a quadrature demodulator to the final outputsignals at baseband frequency. The LO signals are generated by a divider by 4 for the GSM900 band and by a divider by 2 for GSM1800 band. The resulting in-phase and quadratursignals are fed into two baseband low pass filters and the PGC amplifier chain. The baseband filter provide a suppression of inband-blocking and adjacent channel interferers.
After baseband filtering the signal is fed into a PGC amplifier chain. The baseband
PGC: amplifier offers 78 dB programmable gain with 2 dB steps. Due to the high baseband gain (58 dB), DC offsets can corrupt the signal at the baseband outputs. Differential offset voltages are reduced by an internal offset compensation circuit. The control is realised through the EGOLD+ signals (RFDATA; RFCLK; RFSTR.
The Smarti DC consists of a direct conversion receiver for GSM 900/1800.
Demodulator
(RF Control J15, J16, J17).
PGC
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The required voltage VCCSYN is provided by the ASIC D361
Circuit diagram
progr. signals
Top view
to EGOLD+
from antenna
PMB6256
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4.6.2 IC Overview
IC Overview
Smarti
RX Path
TX Path
RX/TX Path
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Block diagram
The functional block diagram shows the IFX RF solution of the A55/C55
RF-Part of L55 Tuna / Infi neon
internal antenna
Pin-diode switch incl.
TX harmonic
filtering
PCN
GSM
antenna
matching
external antenna
mechanical
antenna
Antenna
low pass
filter
switch
(Low=GSM High=DCS)
PGC (2dB steps)
Divider
Divider
%2
%2
+/- 45°
IQ modulator
+/- 45°
IQ modulator
BB filter
FEM1
FEM2
OSW1
VCC_SYN
is supply for al l
Chip VCC's
Output s
Buffer
26MHz
Logic
Divider
DC autocalibr ation
%2
SAW
925-960 MHz
942.5 MHz
FEM incl.
SAW
SAW
1842.5 MHz
1805 - 1880 MHz
LOOP-Fil ter
TX_GSM
(FEM1)
TX_DCS
(FEM2)
OSW1
(Low=GSM High=DCS)
PA_Ramp
TXONPA
(200mV for
(enable)
lowest output
Band
level)
VCC
2_8
BATT+
VCC_SYN
V RF2
(for Smarti
supply)
Salzburg
2.85V
D0950
V REF1
VCC2_8
Tune voltage within 0.5..2.3V
AFC voltage
Tenv
(from E-Gold)
(Temp sensor)
TXON1
Buffer-Limiter
(enable)
Band
(Low=GSM High=DCS)
DCS
GSM
SAW
VCC
2_8
BATT+
enable
enable
VCXOEN
SLEEPQ
GSM LNA
(-20dB at low
gain)
DCS LNA
(-20dB at low
gain)
LFS
for fast lock
VREG
PMB2256
(Lumpi)
H3-Fil ter
(for mod
spectrum)
IQ demodulator
IQ demodulator
Int. Voltage
Regulator
+/- 45°
+/- 45°
RF PLL
PFD+CP
R
1
D
1
internal RF VCO
3420 - 3540 MHz
3540.4 - 3700 MHz
3700.4 - 3820 MHz
3820.8-3839.2 MHz
VCXO
integrated act ive
part
26 MHz
BB filter
BB filterBB filter
State
machi ne
Serial
Interface
RC-Lowpass
Transceiver IC
RC-Lowpass
(2dB steps)
PGC
PGC (2dB steps)PGC (2dB steps)
Smarti DC2
PMB6256
BB-Out BB-Out
PLL_ON
AFC
PA_RAMP
TXON1 TXONPA
RFSTR RFCLK RFDATA
SIN 26MHz
TVCXO (Tenv)
BB: RF_I
BB: RF_IX
BB: RF_Q
BB: RF_QX
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4.7 Transmitter
4.7.1 Transmitter: Modulator and Limited Amplifier
The GMSK modulated signal is generated in the direct modulator. That means, that the modulators are working directly on the final output frequency. The LO frequency is divided by 2 or 4, depending on the GSM band. There are two modulators, one for the two higher bands and the other for the two lower bands..
The required voltages VCC_SYN and VCC2_8 are provided by the ASIC D361
from EGOLD+
The actual signal is fed into a limiting amplifier which also provides a signal path for the high band and one for the low band
to PA
Mode Selection
EGSM900 limiter enable HIGH LOW
GSM1800 limiter enable HIGH HIGH
Pin9 / EN (TXON1/D171_J14)) Pin10 / BS (OSW1/D720_25)
Top View IC Overview
The next stage in the low band line-up is a TX saw filter. In the high band no SAW filter is required.
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4.7.2 Transmitter: and Power Amplifier
The output signals (CS_PA_IN , and GSM_PA_IN) from the limited amplifier are led to the power amplifier (Z1700) passing a matching circuit. contains two separate 3-stage amplifier chains for GSM 900 and GSM 1800. The control of the output power is handled via one Vapc port. The power control circuit itself is integrated in the PA module. The EGOLD generates the power control signal PA-RAMP. The band selection switching is done via
OSW1 from the Smarti IC.
The required voltage BATT+ is provided by the battery. The required voltage VCC2_8 for the power control circuit is provided by the ASIC D361.
Blockdiagram of R 340 (PA)
from limitter amplfier
to Ant. connector
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5 Logic / Control
5.1 Overview of Hardware Structure
5.1.1 Logic Block Diagram
RF Control
RF-
Part
5.1.2 Block Diagram C55 IFX Control Part
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5.1.3 EGOLD+
Block Diagram EGOLD+ V3.1
8
8 16
21 24
Osc.
32.768 kHz
16
Debug Support
CS(4:0)
3
Pulse-Carry Mod.
CAPCOM
2 x 8 bit
ID Register
6
Multicore
External
Bus & Port
Controller
AFC Unit
RTC
32 kHz
5
SSC
SPI
compatible
PD-Bus
MMCI
3
V5.4
ASC0
Autobaud
Detect
GPT1/GPT2
Watchdog
80
SRAM
256k x 8
I2C
2
2
ASC1
13/26/52 MHz / 32 kHz
READY# NMI# HOLD# HLDA# CLKOUT RSTOUT#
OCDS DPEC
Interrupt Controller
Clock Generation
Peripheral Enable
Generator
Power
Management
MCU
C166S
Dual Port RAM
1k x 16
LM-Bus
PROM
1k x 16
Boot
Enable Signals to X- and PD-Bus Peripherals
78 MHz
X-Bus
OCEM
Block
SEIB
16 bit I/O Ports
3
I2S
DSP Timer1
OAK78 DSP
x
Interleaving / De-Interleaving
x
Speech Coding/Decoding
(FR, HR, EFR, AMR)
x
Level Measurement
x
Channel Coding/Decoding
(FR, HR, EFR, AMR)
x
Equalization
x
Encryption / Decryption
x
Voice Memo/Voice Dialing
x
GPRS support
Interrupt Controller
Bus
Interface
Unit
DSP Serial
Comm. Interface /
DAI
DSP Timer2
6
Shared Memory
Dual Port 512 x 16
Accelerator
Cipher Unit
2
SIM card Interface
High Speed
(F=512, D=8/16)
GPRS
Cipher Unit
Logic
Arranger
(LPA)
GSM
TDMA Timer
8 3
4
RF Control
Keypad
Interface
4
6
The EGOLD+ contains a 16-bit micro-controller (µC part), a GSM analog Interface (EGAIM), a DSP computing core (DSP part) and an interface for application-specific switch-functions.
The µC part consists of the following:
Micro-controller
System interfaces for internal and external peripheries
On-chip peripheries and memory
The Controller Firmware carries out the following functions:
Control of the Man Machine Interface (keypad, LCD, sensing element, control of the illumination,...)
GSM Layer 1,2,3 /GPRS
Control of radio part (synthesizer, AGC, AFC, Transmitter, Receiver...),
Control of base band processing (EGAIM)
Central operating system functions (general functions, chip select logic, HW driver, control of mobile
phones and accessories...).
E-GOLD+ V3.0 Architecture
Single Chip Cellular Baseband Processor
Package: P-LFBGA-208
Viterbi
HW
A51/52
P ROM
60k x 16
P RAM
4k x 16
Y RAM
2k x 16
X RAM
15k x 16
X ROM
36k x 16
GMSK
Modulator
Voiceband
Filters
RX and TX
Baseband
Filter/
Cordic-
Processor
TAP Controller
JTAG
Boundary Scan
Interp./
DAC
Noise
R-String
Shaper
Interp./
DAC
Noise
R-String
Shaper
Σ∆
ADC
Σ∆
DAC
Σ∆
ADC
12 bit resolution
Σ∆
ADC
Switch Matrix
Battery & Temperature
Measurement
RF Output
Power Control
10 bit DAC
reference
voltage
confidential
Bandgap
2
2
2
MUX
2
2
2
2
2
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The EGAIM part contains the interface between the digital and the analogue signal processing:
2 Sigma Delta A/D converters for RX signal, and for the necessary signals for the charge control and temperature measurement. For this, the converter inputs are switched over to the various signals via the multiplexer.
2 D/A converters for the GMSK-modulated TX signal,
1 D/A converter for the Power Ramping Signal,
1 Sigma Delta A/D and D/A converter for the linguistic signal.
Blockdiagram EGAIM inside the EGOLD
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Measurement of Battery and Ambient Temperature
The battery temperature is measured via the voltage divider R1387, R138 by the EGOLD+
Interface P2).
For this, the integrated Σ∆ converter of the RX-I base band branch is used. This Σ∆
(Analog
converter compares the voltage of TBAT and TENV internally. Through an analogue multiplexer, either the RX-I base band signal, or the TBAT signal and the TENV signal is switched to the input of the converter. The signal MEAS_ON from the EGOLD+ measurement The ambient temperature TENV is measured directly at of the EGOLD+
Interface P3)
.
(GSM TDMA-TIMER H15) activates the battery voltage
(Analog
Measurement of the Battery Voltage
The measurement of the battery voltage is done in the Q-branch of the EGOLD+, for this BATT+ is connected via a voltage divider R143, R146 to the EGOLD+ does the switching between the baseband signal processing and the voltage measurement.
(Analog Interface P1). An analogue multiplexer
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A/D conversion of MIC-Path signals incl. coding
The Microphone signals (MICN2, MIP2, MICP1, MICN1) arrive at the voiceband part of the EGOLG+. For further operations the signals will be converted into digital information, filtered, coded and finally formed into the GMSK-Signal by the internal GMSK-Modulator. This so generated signals (RF_I, RF_IX,
RF_Q, RF_QX) are given to the Bright IC in the transmitter path.
D/A conversion of EP-Path signals incl. decoding
Arriving at the baseband-Part the demodulated signals (RF_I, RF_IX, RF_Q, RF_QX) will be filtered and A/D converted. In the voiceband part after decoding (with help of the µC part) and filtering the signals will be D/A converted amplified and given as (EPP1_FIL, EPN1_FIL) to the Power Supply ASIC.
Generation of the PA Control Signal (PA_RAMP)
The RF output power amplifier needs an analogue ramp up/down control voltage. For this the system interface on EGOLD+ generates 10 bit digital values which have to be transferred serially to the power ramping path. After loading into an 10 bit latch the control value will be converted into the corresponding analogue voltage with a maximum of ~2V
-
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The DSP part contains:
DSP signal processor
Separate program/data memory
a hardware block for processing the RX signal,
a hardware block for “ciphers“,
a hardware block for processing the linguistic signal,
a hardware block for the “GMSK modulator“,
De-/ interleaving memory,
Communication memory
a PLL for processing and reproducing the VCXO pulse signal.
In the DSP Firmware are implemented the following functions:
scanning of channels, i.e., measurement of the field strengths of neighbouring base stations
detection and evaluation of Frequency Correction Bursts
equalisation of Normal Bursts and Synchronisation Bursts
channel encoding and soft-decision decoding for fullrate, enhanced-fullrate and
adaptive multirate speech, fullrate and halfrate data and control channels.
channel encoding for GPRS coding
fullrate, enhanced fullrate and adaptive multirate speech encoding and decoding
mandatory sub-functions like
– discontinuous transmission, DTX – voice activity detection – background noise calculation
generation of tone and side tone
hands-free functions
support for voice memo
support for voice dialling
loop-back to GSM functions
GSM Transparent Data Services and Transparent Fax
calculation of the Frame Check Sequence for a RLP frame used for GSM NonTransparent Data
Services
support of the GSM ciphering algorithm
Real Time Clock (integrated in the EGOLD+): The real time clock is powered via a separate voltage regulator inside the Power Supply ASIC. Via a capacitor, data are kept in the internal RAM during a battery change for at least 30 seconds. An alarm function is also integrated with which it is possible to switch the phone on and off.
5.1.4 SRAM
Memory for volatile data A52 A55/C55 Memory Size: 4 Mbit 2 Mbit Data Bus: 16Bit 16Bit
5.1.5 FLASH
A52 A55/C55 Memory Size: 32Mbit 64Mbit (8 Mbyte) Data Bus: 16 Bit 16 Bit
5.1.6 SIM
SIM cards with supply voltages of 1.8V and 3V are supported.
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5.1.7 Vibration Motor
The vibration motor is mounted in the lower case. The electrical connection to the PCB is realised with pressure contacts.
6 Power Supply
6.1 Power Supply ASIC
The power supply ASIC will contain the following functions:
Powerdown-Mode
Sleep Mode
Trickle Charge Mode
Power on Reset
Digital state machine to control switch on and supervise the µC with a watchdog
Voltage regulator
Low power voltage regulator
Additional output ports
Voltage supervision
Temperature supervision with external and internal sensor
Battery charge control
2C interface
I
Audio multiplexer
Audio amplifier stereo/mono
16 bit Sigma/Delta DAC with Clock recovery and I
Bandgap reference*
2S
INFO:
* Bandgap reference
The p-n junction of a semiconductor has a bandgap-voltage. This bandgap-voltage is almost independent of changes in the supply voltage and has a very low temperature gradient. The bandgap­voltage is used as reference for the voltage regulators.
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Power Supply Diagram
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6.1.1 Power Supply Operating modes:
The ASIC can be used in different operating modes:
Mode
Power down mode with minimum activity
Start Up Mode ON_OFF
Full operating mode
Active Mode (submode of Full operating mode)
Sleep Mode with special low current operating mode for the LDOs (submode of Full operating mode)
Pin Requirements
ON/OFF ON/OFF2 VDD_CHARGE
ON_OFF2
VDD_CHARGE CHARGE_UC
In this mode, the µC(EGOLD+) controls the
SLEEP1_N TC_ON CHARGE_uC
Description
In power down mode the current consumption of the ASIC is very low. The inputs for switch on conditions (ON/OFF-PinH2, ON/OFF2-PinJ3 ,VDD_CHARGE-PinC3), the LPREG, Bandgap reference and the POR cells are active. All other blocks are switched off, so the battery is not discharged. This state is called “phone off. Start Up Mode can be initiated by
ON_OFF(PinH2) or ON_OFF2(PinC3). In this
mode a sequential start-up of references, oscillator, voltage supervision and regulators is controlled by digital part. In failure case (under voltage, over voltage or time out of the µC reaction)., the ASIC is shut down. All blocks are active. Trickle charge is switched off. The blocks fast charge and charge monitor can be active only in this mode. These modes will be activated with VDD_CHARGE(PinC3) or
CHARGE_UC(PinH4). The name of this mode
is “phone on” or “active mode”. The border between the startup phase and the active mode is the rising edge of the RESET2_N (PinG1) signal. This will allow the µC(EGOLD+) to start
working.
charging block and most of the failure cases. The ASIC can be controlled by the TWI interface (I2CC-PinJ2, I2CD-PinG3, I2CI- PinE2), interrupts can be sent by the ASIC. Further, the temperature and the voltages are supervised (in case of failure, the uC will be informed). In case of watchdog failure, over voltage or power on reset, the ASIC will be switched off immediately. The mono and stereo audio block can be switched on in active mode. A low level at the signal VCOEN_UC (PinH1)
will switch the phone from the mode “PHONE ON” to sleep mode. This mode can be activated out of the active mode. In sleep mode trickle charge, fast charge, supply over voltage detection, supply under voltage detection, audio function are switched off. LDO under voltage detection, clock and all reference voltages are active. LDOs are working in low current mode. The possibility to supply the
ASIC from VDD_CHARGE (PinC3) with the
internal LDO is switched off. Only the battery can be used for supply. This mode is called “phone stand-by”.
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Mode
Trickle charge mode to be able to support charging of the battery
Pin Requirements
VDD_CHARGE EXT_PWR
Description
In case of a rising edge at VDD_CHARGE (PinC3) the ASIC goes from power down to interim mode. In this mode, the oscillator and the reference are started. The fuses are read in. If the voltage is high enough (after a delay time of 1 ms to filter a ringing), the internal signal EXT_PWR is going to H and the power up continues. The ASIC shuts off if the voltage is below threshold. In Trickle Charge Mode, first the charge unit starts and charges the battery in case of under voltage. After reaching this threshold voltage or if the battery has enough voltage from the beginning, a start up similar to the regular startup mode is initiated. In case of voltage drop under battery threshold, the first trickle charging can be started again until the Active Mode is entered. In this case, the internal VDDREF regulator, the reference generator and oscillator are started and the
ASIC is supplied by VDDREF. If any failure is
detected, the ASIC is switched off.
6.1.2 Power Supply Functions:
Functions
Switching on the mobile phone
Pin Requirements
ON_OFF, ON_OFF2, VDD_CHARGE
Sequence
There are 3 different possibilities to switch on the phone by external pins:
- VDD_CHARGE (PinC3) with rising edge
after POR or high level at end of POR signal
- ON/OFF (PinH2) with falling edge
- ON/OFF2 (PinJ3) with rising edge
In order to guarantee a defined start-up behavior of the external components, a sequential power up is used and the correct start up of these blocks is supervised. In active mode, a continuous signal at watchdog is needed to keep the system running. If the signals fails, the
ASIC will switch to power down mode. It
must be guaranteed that each start-up condition does not interfere and block the other possible startup signals. In case of failure during start-up, the device will go back to power down mode. To guarantee that VDDCHARGE (PinC3) is always sensed we must be able to detect whether the VDDCHARGE (PinC3) will have a rising edge during POR (this can happen in case of an empty battery). Therefore this signal is sensed as level sensitive at the end of POR and edge sensitive after POR signal.
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Functions
Watchdog monitoring
Pin Requirements
Sequence
WDOG As soon as the first WDOG (PinH3) pin rising is
detected during the TE4 timer, the device start the watchdog monitoring procedure. Standard switch off of the phone is the watchdog. The first edge of watchdog is rising. If a falling edge is detected as the first transient the device will go to power down mode again and the whole phone is switched off. Rising and falling edges must be detected alternated. With any edge on
WDOG (PinH3) pin a counter will be loaded.
The next - compared to the previous edge ­inverted edge must occur between end of T1, and end of T2. If the signal occurs before end of T1 or is not detected until end of T2, the device will go to power down mode immediately after the violation of the watchdog criteria occurs. T1 min. 0,327s/ typ. 0,360s/ max. 0,400s T2 min. 2,600s/ typ. 2,860s/ max. 3,178s
Power-On-Reset (POR)
RESET_N RESET2_N
To guarantee a correct start-up of the ASIC, a power on reset is needed at first power supply ramping. Therefore a static/dynamic power on reset circuit is added, which creates a reset each time the power supply is connected. After POR the ASIC starts up the reference and the oscillator, read in the fuse content and goes back to power down mode. If the power supply will drop under the POR threshold a synchronous reset is done and the ASIC will go to power down mode independently of the previous operating mode.
Voltage Supply Logics
REG1 (2.9V)
The linear controller is designed for 2.9V(±2%) and a maximum load current of 140 mA. Voltage and current for the external Logic is supplied from the internal 2.9V logic regulator. The operating voltage VREG1 is kept constant up to the maximum rated load current. A reference voltage for the regulator circuit is generated from a bandgap reference
Voltage Supply Logics
REG2 (1,92V)
The linear controller is designed for
1.82V(±3%) and a maximum load current of
300 mA. The REG2 supplies the Baseband Processor. For a high power application, the power has to be dissipated outside of the chip. This is done with a series diode at the input of REG2, which will force the regulator to a lower input voltage and therefore lower power dissipation.
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Functions
Voltage Supply Logics
Pin Requirements
REG3 (2.65V)
Sequence
The linear controller is designed for
2.65V(±3%) and a maximum load current of
220 mA. It will consist basically of an internal operation amplifier, an integrated p-channel output transistor as well as a capacitor (C = 2.2µF) for stabilizing the voltage. The required reference voltage for the regulating circuit will be generated internally via a bandgap. The negative feedback of the regulating circuit shall be done via chip-internal resistances.
Voltage Supply RF
VREGRF1, RF_EN, RESET_N
The linear controller is designed for 2.85V(min.
2.79V, max. 2.91V) and a maximum load current of 120 mA. Voltage and current for RF-VCO and Transceiver is supplied from the internal 2.85V LDO. The operating voltage RF12LDO is kept constant up to the maximum rated load current. A reference voltage for the regulator circuit is generated from a bandgap reference. A low noise must be guaranteed. RF1LDO is controlled by RF_EN. If it is set to high, the regulator is enabled. The control method can be modified by TWI interface between external and internal control mode. If internal control mode is set, RF1LDO can only be enabled by TWI bit. In external mode, RF1LDO can only be enabled by RF_EN. RF1LDO is released with rising edge of RESET_N signal.
Voltage Supply RF
VREGRF2, SLEEP1_N, SLEEP2_N, POWER_ON
The linear controller is designed for 2.85V(min.
2.79V, max. 2.91V) and a maximum load current of 180 mA. Voltage and current for RF-VCO and Transceiver is supplied from the internal 2.85V LDO. The operating voltage RF2LDO is kept constant up to the maximum rated load current. A reference voltage for the regulator circuit is generated from a bandgap reference. A low noise must be guaranteed. RF2LDO is controlled by VCXO_EN (PinH1). If it is set to high, the regulator is enabled. The control method can be modified by TWI interface between external and internal control mode. If internal control mode is set, RF2LDO can only be enabled by TWI bit. In external mode, RF2LDO can only be enabled by
VCXO_EN (PinH1).
RF2LDO is released with rising edge of POWER_ON signal.
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Functions
Voltage Supply Audio
Pin Requirements
Sequence
VREGA The linear controller is designed for 2.9V(min.
2.84V, max. 2.96V) and a maximum load current of 190 mA.
BATT+ (PinA9) is used for the whole stereo
analog supply. The DAC digital VDDDAC (PinC6), Low Noise Bandgap, Mono- and Stereoamplifier supplies are connected to
VREGA (PinB9). The AUDIO performances are
guaranteed only, if the VREGA supplies all the stereo path.
VREGA is controlled with TWI registers directly
by the µC.
Voltage Supply RTC
VLPREG The linear controller is designed for 2.00V(min.
1.9V, max. 2.1V) and a maximum load current of 1 mA. The output voltage can be adjusted to four different values with TWI register by the µC. The selectable values are 2.00(default), 1.82,
1.92 and 2.07V. LP-LDO is always working and will switch of only with POR signal.
Voltage Supply SIM
VREGSIM The linear controller is designed for 2.9V(min.
2.84V, max. 2.96V) and a maximum load current of 60 mA. The output voltage can be adjusted to a different value with TWI register by the µC to 1.8V(min. 1.76V, max. 1.84V).
This regulator can be activated by TWI register
, but only in active mode. If the regulator is in
power down, the output is pulled down by a
transistor to avoid electrostatic charging of
VREGSIM (PinB8)
Charge Support CHARGE_UC,
CHARGE, VDDCHARGE, AVDD, SENSE_IN, TBAT
A charge support will be integrated for controlling the battery charge function. It consists basically of a temperature sensor, an external charge FET, an integrated High-side driver for the external FET with an external resistor between the source and the gate of the charge FET. In the case of a rising edge at the
CHARGE_UC(PinH4) the power source will be
switched on. In this way the charge FET becomes conducting, provided that the integrated temperature comparator does not give the signal for extreme temperature and that no over voltage is present at the VDD. In the case of falling slope at the
CHARGE_UC(PinH4), the current source is
switched off and the pull-up resistor will make sure that the charge FET is blocked after a definite time. Temperature switchoff becomes effective at approx. T>60°C.
Voltage supervision
The levels of regulator REG1 and REG2 and
also the supply voltage BATT+ are supervised with comparators.
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Functions
Supervision of REG1 and REG2
Pin Requirements
REG1 REG2
Sequence
In active mode the regulators are supervised permanently. If the voltage is under the threshold, the pin RESET_N2 (PinG1) stay Low and the ASIC goes back to the power down mode. If the voltage is longer than Tmin under threshold voltage, the RESET_N2 (PinG1) is going to Low (Missing Watchdog signal -> phone switched off). The level of regulator REG1 and REG2 will be supervised permanently. If the voltage doesn’t reach the threshold value at switch on, the RESET_N2 (PinG1) will stay low and the ASIC will go back to power down mode. The voltages are sensed continuously and digitally filtered with a time constant Tmin. If the regulator voltage is under threshold longer than Tmin, the RESET_N2 (PinG1) signal change to low and the µC will go
to RESET condition (Missing Watchdog signal -
> phone switched off).
Powersupply supervision
VDD If the battery voltage BATT+ exceeds VDD
high, everything is switched off immediately within 1µs. Only the pull-up circuitry for the external charge PMOS are active and will discharge the gate of the external PMOS
VDDA supervision VDDA To provide a short circuit protection at output of
VDDA (PinA9) and output of stereo buffer a
voltage supervision is implemented. If the VDDA output is less then this threshold, the VDDA will be switched off for 128ms. After this time the VDDA will be started again. The VDDA supervision starts 60ms after startup of VDDA.
Battery temperature supervision
Charging is stopped, when over temperature
occurs. Within 128ms, 3 values are measured. When these 3 values are identical status can be changed. The supervision is active in fast charge or trickle charge mode. Voltage on pin
TBAT (PinB3) becomes smaller when
temperature increases. If Vbat < (Vref_exe ­Vhyst) charging is disabled. Only when Vtbatt > Vref_exe charging is enabled again.
Device temperature supervision
To protect the ASIC, the temperature is
supervised. The temperature is polled every 128ms and is filtered as in battery temperature supervision. If over temperature is detected, a bit in the STATUS register is set and an interrupt is generated. Monitoring is started only in active mode.
Analog switch Outport
The level can be defined by the bit
out_port_high of the TWI register. The high level can be derived of VREG2 or VREG3. Additional a pull down transistor is connected to this node.
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Functions
TWI Interface TWI_CLK,
Pin Requirements
TWI_DATA, TWI_INT
Sequence
The TWI interface (I2CC-PinJ2, I2CD-PinG3,
I2CI-PinE2) is an I2C compatible 2-wire
interface with an additional interrupt pin to inform the µC about special conditions. The interface can handle clock rates up to 400 kHz.
Audio mode functions
Four audio amplifiers are integrated to support
these modes:
1. Supply the speaker in the phone with audio
signals including the possibility of handsfree switch on and off. This is the AUDIO MONO MODE.
2. Supply the speaker in the phone with
ringing signal (RINGER MODE)
3. Transfer a key click, generated in digital
part to the speaker. (KEY-CLICK FUNCTION)
4. Supply of stereo head set with stereo
signal with short circuit protection. This is called the AUDIO STEREO MODE. These different modes with gain and multiplexing can be controlled via TWI. Also the output can be switched to TRI-STATE via TWI interface.
Audio Mono Mode VREGA
MONO1 MONO2 VREFEX_M
This mode is the main function of the amplifier. The two amplifiers are used as differential mono amplifier to drive the speaker in the phone as external load. This differential approach allows delivering an optimum of power to the speaker also in low voltage mode. Both amplifier paths are inverting amplifiers with external AC coupling at the input to compensate offset failures. The gain can be adjusted with the TWI interface. The output stage of the amplifiers must be able to drive a low impedance load as an external speaker for the handsfree application. General parameters: Gain can be adjusted for each channel separately in steps of 1.5dB in the range of 21dB to –54 dB and in steps of 3 dB in the range of –54dB to –75dB. The signals for the amplifier are connected via an audio multiplexer with 3 pairs of input signals.
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Functions
Pin Requirements
Sequence
Ringer function RINGIN In ringer mode the ringing signal is transferred
via the amplifier to the speaker to eliminate the additional buzzer. The speaker is controlled with a rectangular signal RINGIN (PinG9). Input signal is digital signal with variable frequency. Amplitude is adjusted by TWI register. For start-up a smaller time constant must be used to allow a fast switch on behavior. Ringing function can be started at any time. If the audio is off, the start-up is done with RINGER time constant. If audio is starting with AUDIO start­up, the time constant is switched to RINGER mode, too. If the audio amplifier is already up and running, the RINGIN (PinG9) is connected to the amplifier and audio signal is muted due to open multiplexer.
Key click function Pushing a key of the phone can be combined
with a key click. This function is also realized with the audio amplifier in pulsed mode. The
ASIC creates a digital PWM signal. Frequency
of the PWM signal is 3.5 kHz. The start-up is similar to the ringer function. If the audio is off, the start-up is done with KEYCLICK time constant. If audio is starting with AUDIO start-up, the time constant is switched to KEYCLICK mode, too. If the audio amplifier is already up and running, the KEYCLICK is connected to the amplifier and audio signal is muted due to open multiplexer.
Audio Multiplex Matrix
AUDIOA1 AUDIOA2 AUDIOB1 AUDIOB2 AUDIOC1 AUDIOC2
Each of the three input sources should be switched to Mono and Stereo outputs. Furthermore a conversion can be done. Following sources:
- Mono differential
- Mono Single Ended (both channels
parallel)
- Stereo The DAC can be switched off for using the analog external inputs. This principle will allow to do each combination and have different modes for stereo and mono in parallel.
I2S Interface CLO,
WAO, DAO
The I2S Interface is a three-wire connection that handles two time multiplexed data channels. The three lines are the clock (CLO), the serial data line (DAO) and the word select line (WAO). The master I2S also generates the appropriate clock frequency for CLO set to 32 times the sampling rate (FS)
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Functions
Audio DAC
Pin Requirements
Sequence
VDDDAC For digital to analog conversion a 16-bit sigma
delta converter is used. Digital input signal is delivered with an I2S interface. The I2S interface should be 16-bit format. To be able to work with all possible operating modes, the sampling frequency can vary from 8kHz to 48kHz. The performance of the audio output signal must be guaranteed over the full range the human ear is able to hear. This means for FS=8kHz the noise at frequencies higher than FS/2 must be suppressed. This is done by DSP and a single ended 2
nd
order Low Pass filter. The clock for the I2S will be varied accordingly to the sampling frequency. Therefore a clock recovery based on CLO signal of the I2S can be implemented. This clock recovery must smooth any jitter of this clock to reduce the noise of the DAC.
PLL VDDPLL
PLLOUT
The PLL will have three frequency modes to produce a 32xCLO clock for the DSP and the DAC. The loop filter is realized with an external RC circuit. This PLL also contains a lock detector circuit.
Audio Stereo Mode
VDDSTEREO STEREO1 STEREO2 STEREOM
For stereo mode 2 single ended buffers are used. These buffers will be supplied by the additional regulator with 2.9 Volt to be more stable against the GSM ripple on the battery voltage. Also reference voltage for the buffers is generated by a high precision, low noise bandgap reference for better performance. An external capacitor is needed to filter this reference additionally. The gain steps for the programmable gain amplifier is identical with the mono amplifier. No keyclick and ringer needed for the stereo part. Gain can be controlled with the TWI. The connected speaker has an impedance of typical 16 Ohm. To guarantee an ANTI-POP noise a digital startup is implemented. This will allow a soft start of the VMID and creates a “clean” audio band during the startup. For eliminating external coupling capacitors for the speaker, an additional amplifier creates virtual ground (for both speakers). Accordingly to this, the max current of the virtual ground has to be the double of the normal output amplifier. Due to the power amplifier offset a DC current appear in the headset. Gain can be adjusted for each channel separately in steps of 1.5dB in the range of 21dB to –54 dB and in steps of 3 dB in the range of –54dB to –75dB
6.2 Battery
As a standard battery a LiIon battery with a nominal capacity of 3,7 Volt/700mAh is used.
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6.3 Charging Concept
Charging current Charging control signal
6.3.1.1 Charging Concept
General
The battery is charged in the unit itself. The hardware and software is designed for LiIon with 4.2V technology. Charging is started as soon as the phone is connected to an external charger. If the phone is not switched on, then charging takes place in the background (the customer can see this via the “Charge” symbol in the display). During normal use the phone is being charged (restrictions: see below). Charging is enabled via a PMOS switch in the phone. This PMOS switch closes the circuit for the external charger to the battery. The EGOLD+ takes over the control of this switch depending on the charge level of the battery, whereby a disable function in the POWER SUPPLY ASIC hardware can override/interrupt the charging in the case of over voltage of the battery (only for Manganese Chemistry Battery types e.g. NEC). With the new slim Lumberg IO connector we lose the charger recognition via SB line. Now we measure the charge current inside the POWER SUPPLY ASIC with a current monitor. The charging software is able to charge the battery with an input current within the range of 350-600mA. If the Charge-Fet is switched off, then no charging current will flow into the battery (exception is trickle charging, see below). For controlling the charging process it is necessary to measure the ambient (phone) temperature and the battery voltage. The temperature sensor will be an NTC resistor with a nominal resistance of 22k at 25°C. The determination of the temperature is achieved via a voltage measurement on a voltage divider in which one component is the NTC. The NTC for the ambient temperature will be on the PCB (13 MHz part).
Measurement of Battery, Battery Type and Ambient Temperature
The voltage equivalent of the temperature and battery code on the voltage separator will be calculated as the difference against a reference voltage of the EGOLD. For this, the integrated Σ∆ converter in the
EGOLD of the RX-I base band branch will be used. Via an analogue multiplexer, either the RX-I base
band signal, the battery code voltage or the ambient temperature voltage can be switched over to the input of the converter. The 1-Bit data stream of the converter will be subjected to a data reduction via the DSP circuit so that the measured voltage (for battery and ambient temperature) will be available at the end as a 10-bit data word.
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Measurement of the Battery Voltage
Analogue to the I-branch either the RX-Q base band signal or the battery voltage can be measured in the Q-branch. Processing in the DSP circuit will be done analogue to the I-branch. The EGOLD will be specified internally at voltage measurement input BATT+ for an input voltage of 3V...4.5V.
Timing of the Battery Voltage Measurement
Unless the battery is charging, the measurement is made in the TX time slot. During charging it will be done after the TX time slot. At the same time, either the battery temperature (in the I-branch) and the battery voltage (in the Q-branch) or the ambient temperature in the I-branch can be measured (the possibility of measurement in the Q-branch, the analogue evaluation of the battery coding, is used for HW-Coding). Other combinations are not possible. For the time of the measurement the multiplexer in the EGAIM must be programmed to the corresponding measurement.
Recognition of the Battery Type
The battery code is a resistor with a resistance depending on the manufacturer.
Charging Characteristic of Lithium-Ion Cells
LiIon batteries are charged with a U/I characteristic, i.e. the charging current is regulated in relation to the battery voltage until a minimal charging current has been achieved. The maximum charging current is approx. 600mA, minimum about 100mA. The battery voltage may not exceed 4.2V ±50mV average. During the charging pulse current the voltage may reach 4.3V. The temperature range in which charging of the phone may be started ranges from 5...40°C, and the temperature at which charging takes place is from 0...45°C. Outside this range no charging takes place, the battery only supplies current.
Trickle Charging
The POWER SUPPLY ASIC is able to charge the battery at voltages below 3.2V without any support from the charge SW. The current will by measured indirectly via the voltage drop over a shunt resistor and linearly regulated inside the POWER SUPPLY ASIC. The current level during trickle charge for voltages <2.8V is in a range of 20-50mA and in a range of 50-100mA for voltages up to 3.75V. To limit the power dissipation of the dual charge FET the trickle charging is stopped in case the output voltage of the charger exceeds 10 Volt. The maximum trickle time is limited to 1 hour. As soon as the battery voltage reaches 3.2 V the POWER SUPPLY ASIC will switch on the phone automatically and normal charging will be initiated by software (note the restrictions on this item as stated below).
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Normal Charging
For battery voltages above 3.2 Volt and normal ambient temperature between 5 and 40°C the battery can be charged with a charge current up to 1C*. This charging mode is SW controlled and starts if an accessory (charger) is detected with a supply voltage above 6.4 Volt by the POWER SUPPLY ASIC. The level of charge current is limited/controlled by the accessory or charger.
INFO:
* C-rate
The charge and discharge current of a battery is measured in C-rate. Most portable batteries, are discharge with 1C. A discharge of 1C draws a current equal to the battery capacity. For example, a battery value of 1000mAh provides 1000mA for one hour if discharged at 1C. The same battery discharged at 0.5C provides 500mAfor two hours. At 2C, the same battery delivers 2000mA for 30 minutes. 1C is often referred to as a one-hour discharge; a 0.5 would be a two-hour, and a 0.1C a 10 hour discharge.
Restrictions
A battery which has completely run down can not be re-charged quickly because the battery voltage is less than 3.0V and the logic which implements the charge control cannot be operated at this low voltage level. In this case the battery is recharged via trickle-charging. However, the charging symbol cannot be shown in the display because at this time logic supply voltages are not operating. The charging time for this trickle-charging (until the battery can be fast-charged from then on) is in the range of 1 hour. If, within this time, the battery voltage exceeds 3.2V, then the POWER SUPPLY
ASIC switches on the mobile and charging continues in the Charge-Only Mode. In some
circumstances it can happen that after trickle-charging and the usually initiated switch-on procedure of the mobile, the supply voltage collapses so much that the mobile phone switches off again. In this case trickle charging starts again with a now raised threshold voltage of 3.75V instead of 3.2V, at maximum for 20 minutes. The POWER SUPPLY ASIC will retry switching on the phone up to 3 times (within 60 minutes overall).
Charging the battery will not be fully supported in case of using old accessory (generation ‘45’ or earlier). It is not recommended to use any cables that adapt “old” to “new” Lumberg connector. Using such adapters with Marlin will have at least the following impact:
1) half-sine wave chargers (e.g. P35 & home station) can not be used for trickle
charging
2) normal charging might be aborted before the battery is fully charged
3) EMC compliance can not be guaranteed
A phone with a fully charged LiIon battery will not be charged immediately after switch-on. Any input current would cause an increase of the battery voltage above the maximum permissible value. As soon as the battery has been discharged to a level of about 95% (due to current consumption while use), it will be re-charged in normal charging mode.
The phone cannot be operated without a battery.
The phone will be destroyed if the battery is inserted with reversed polarity: design-wise it is impossible to wrongly pole the phone. This is prevented by mechanical means. electrically, a correctly poled battery is presumed, i.e. correct polarity must be guaranteed by
suitable QA measures at the supplier
The mobile phone might be destroyed by connecting an unsuitable charger: a charger voltage >15V can destroy resistances or capacitors a charger voltage >20V can destroy the switch transistor of the charging circuit
In case the transistor fails the ASIC will be destroyed. In the case of voltages lower than 15V and an improper current limitation the battery might be permanently damaged. A protection against grossly negligent use by the customer (e.g. direct connection of the charge contact to the electricity supply in a motor car) is not provided. Customer safety will not be affected by this restriction.
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7 Interfaces
7.1 Vibra
XG220
Pin IN/OUT Remarks
1 O 2 O The FET V211, switching this signal, is controlled via the
EGOLD+ signal VIBRA_UC.
7.2 Earpiece
XG250
Pin Name IN/OUT Remarks
1 EPP1 O 1st connection to the internal earpiece.
Earpiece can be switched off in the case of accessory operation. EPP1 builds together with EPN1 the differential output to drive the multifunctional “earpiece” (earpiece, ringer, handsfree function).
2 EPN1 O 2nd connection to the internal earpiece.
Earpiece can be switched off in the case of accessory operation.
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7.3 Microphone
XG242
Pin Name IN/OUT Remarks
1 MICP1 O Microphone power supply. The same line
carries the low frequency speech signal.
2 MICN1 I Speech signal. The same line carries the
microphone power supply.
3 GND_MIC
7.4 Battery
XG181
Pin Name Level Remarks
1 GND - Ground 2 AKKU_TYP 0V...2.65V Recognition of battery/supplier 3 BATT+ 3 V... 4.5V Positive battery pole
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7.5 IO Connector with ESD protection
7.5.1 IO Connector – New Slim Lumberg
Name IN/OUT Notes Pin 1 POWER I/O POWER is needed for charging batteries and for supplying
the accessories. If accessories are supplied by mobile, talk-time and standby-time from telephone are reduced. Therefore it has to be respected on an as low as possible power consumption in the accessories.
2 GND 3 TX O Serial interface
4 RX I serial interface
5 DATA/CTS I/O Data-line for accessory-bus
Use as CTS in data operation.
6 RTS I/O Use as RTS in data-operation.
7 CLK/DCD I/O Clock-line for accessory-bus.
Use as DTC in data-operation.
8 AUDIO_L Analog O driving ext. left speaker
With mono-headset Audio_L and Audio_R differential mode
9 AUDIO_REF Analog O mid-voltage
in stereo mode reference to AUDIO_L and AUDIO_R in mono mode not used
10 AUDIO_R Analog O driving ext. right speaker With mono-headset Audio_L and
Audio_R differential Signal
11 GND_MIC Analog I for ext. microphone
12 MICP2 Analog I External microphone
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7.5.2 ESD Protection with EMI filter
The Z211 is a 5-channel filter with over-voltage and ESD Protection array which is designed to provide filtering of undesired RF signals in the 800-4000MHz frequency band Additionally the Z211 contains diodes to protect downstream components from Electrostatic Discharge (ESD) voltages up to 8 kV.
Pin configuration of the Z211
Z211 Circuit Configuration
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7.6 SIM
Pin Name IN/OUT Remarks
3 CCLK O Pulse for chipcard.
The chipcard is controlled directly from the
EGOLD+.
2 CCRST O Reset for chipcard
I 7 CCIO O
1 CCVCC - Switchable power supply for chipcard;
Data pin for chipcard; 10 k pull up at the CCVCC pin
220 nF capacitors are situated close to the chipcard pins and are necessary for buffering current spikes.
7.7 Display
Pin Name Remarks
1 2.9V Power supply display controller 2 LCD_CLK Clock 3 LCD_DAT Data line 4 LCD_RS Register select 5 LCD_CS Chip select 6 GND GND 7 VLCD Power supply display 8 LCD_RESET Reset
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8 Acoustic
The buzzer and the keypad clicks will be realized over the earpiece. At normal buzzer the signaling will realized with swelling tones. At the same time a maximum sound pressure level in the coupler of 135 +/­5dB(A) is fixed. The standard sounds will be generated by the EGOLD+, the advanced sounds will be generated via firmware running on the DSP.
8.1 Microphone
8.1.1 Mechanical
The microphone is built in the Mounting Frame Lower Part and is mechanically fixed with a rubber seal (gasket). The contact on the PCB is realised via spiral springs, which are integrated in the gasket. Because of usage of Unidirectional Microphone, the gasket has a front- and a back sound-inlet hole. The front sound-inlet is acoustically tighten connected with a sound-inlet at the rear-side of the mounting frame lower part. The back sound-inlet is acoustically tighten connected with a sound-inlet at the bottom-side of the mounting frame lower part. The gasket of the microphone has a asymmetrical shape in order to provide non-rotating, guaranteed covering of the sound-inlets of mounting frame lower part to the corresponding sound-inlets at microphone gasket.
8.1.2 Electrical
Both Microphones are directly connected to the EGOLD+.(Analog Interface G2, F1-G3, H2) via the signals
MICN1, MICP1 (Internal Microphone )and MICN2, MICP2 (External Microphone/Headset). Power
supply for the Microphone is VMIC (EGOLD+.(
Analog Interface G1))
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8.2 Earpiece/Loudspeaker
8.2.1 Mechanical
The speakermodule is designed to provide optimal performance for mobile handsfree and sound ringer. Plus independent from mobile leakage sound performance. Therefore speakermodule is a system that has a closed front volume with sound-outlets towards the ear of the user. Backvolume of Speakermodule is using the unused air between the antenna and the PCB. Backvolume is just used for resonance, there is no sound output from backvolume. The speakermodule is glued to the lightguide and contacted via two bending springs to the PCB. The lightguide itself is screwed with six screws via the PCB to the mounting frame lower part. Two of the six screws are located besides of the connection of speakermodule and lightguide. Therefore a good and reliable connection between speakermodule and PCB should be provided.
8.2.2 Electrical
The internal and external Loudspeaker (Earpiece) is connected to the voiceband part of the EGOLD+
Analog Interface B1, C1) via audio amplifier inside the ASIC (D361). Input EPN1_FIL - EPP1_FIL. Output
( for external loudspeaker AUDIO_L - AUDIO_R, for internal Loudspeaker EPP! – EPN1. The ringing tones are generated with the loudspeaker too. To activate the ringer, the signal RINGIN from the EGOLD+ (
Miscellaneous,D16) is used
to ASIC
from Bright IC
EGOLD+
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1
9 Display and Illumination
9.1 Display
The display is provided with 2,65V from the ASIC (D361). The communication with the EGOLD+ by the LCD-Signals, directly connected to the EGOLD+
Topside of
display
Controller
8
9.2 Illumination
The light is switched via switches inside the EGOLD+. With the signal LIGHT_KB ( illumination for the keyboard is controlled, with LIGHT_LCD. ( can be switched “on” and “off”. During the TX timeslot the light is deactivated via the signal BL_OFF
GSM TDAM-Timer G14)
(
GSM TDMA-Timer G15) the display backlight
Miscellaneous T17) the
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10 Keyboard
The keyboard is connected via the lines KB0 – KB9 with the EGOLD+. KB 7 is used for the ON/OFF switch. The lines KB0 – KB5 are used as output signals. In the matrix KB6, KB8 and KB9 are used as input signals for the EGOLD+.
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