SAMSUNG M392B2873GB0 Technical data
Rev. 1.01, Dec. 2010
http://www.BDTIC.com/SAMSUNG
M392B2873GB0
M392B5673GB0
M392B5670GB0
240pin VLP Registered DIMM
based on 1Gb G-die
78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved.
- 1 -
Rev. 1.01
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VLP Registered DIMM
datasheet DDR3 SDRAM
Revision History
Revision No. History Draft Date Remark Editor
1.0 - First Release Nov. 2010 - S.H.Kim
1.01 - Corrected typo. Dec. 2010 - S.H.Kim
- 2 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
Table Of Contents
240pin VLP Registered DIMM based on 1Gb G-die
1. DDR3 VLP Registered DIMM Ordering Information ..................................................................................................... 4
2. Key Features................................................................................................................................................................. 4
3. Address Configuration ..................................................................................................................................................4
4. Registered DIMM Pin Configurations (Front side/Back side)........................................................................................ 5
5. Pin Description ............................................................................................................................................................. 6
6. ON DIMM Thermal Sensor ........................................................................................................................................... 6
7. Input/Output Functional Description..............................................................................................................................7
8. Pinout Comparison Based On Module Type................................................................................................................. 8
9. Registering Clock Driver Specification..........................................................................................................................9
9.1 Timing & Capacitance values .................................................................................................................................. 9
9.2 Clock driver Characteristics..................................................................................................................................... 9
10. Function Block Diagram:.............................................................................................................................................10
10.1 1GB, 128Mx72 Module (Populated as 1 rank of x8 DDR3 SDRAMs) ................................................................... 10
10.2 2GB, 256Mx72 Module (Populated as 2 ranks of x8 DDR3 SDRAMs) ................................................................. 11
10.3 2GB, 256Mx72 Module (Populated as 1 rank of x4 DDR3 SDRAMs) ................................................................... 12
11. Absolute Maximum Ratings ........................................................................................................................................13
11.1 Absolute Maximum DC Ratings............................................................................................................................. 13
11.2 DRAM Component Operating Temperature Range .............................................................................................. 13
12. AC & DC Operating Conditions...................................................................................................................................13
12.1 Recommended DC Operating Conditions (SSTL-15)............................................................................................13
13. AC & DC Input Measurement Levels ..........................................................................................................................14
13.1 AC & DC Logic Input Levels for Single-ended Signals.......................................................................................... 14
13.2 V
13.3 AC and DC Logic Input Levels for Differential Signals .......................................................................................... 16
13.3.1. Differential Signals Definition ......................................................................................................................... 16
13.3.2. Differential Swing Requirement for Clock (CK - CK
13.3.3. Single-ended Requirements for Differential Signals ...................................................................................... 17
13.3.4. Differential Input Cross Point Voltage ............................................................................................................ 18
13.4 Slew Rate Definition for Single Ended Input Signals .............................................................................................18
13.5 Slew rate definition for Differential Input Signals ................................................................................................... 18
14. AC & DC Output Measurement Levels ....................................................................................................................... 19
14.1 Single Ended AC and DC Output Levels............................................................................................................... 19
14.2 Differential AC and DC Output Levels ................................................................................................................... 19
14.3 Single-ended Output Slew Rate ............................................................................................................................ 19
14.4 Differential Output Slew Rate ................................................................................................................................ 20
15. DIMM IDD specification definition ...............................................................................................................................21
16. IDD SPEC Table .........................................................................................................................................................23
17. Input/Output Capacitance ...........................................................................................................................................25
18. Electrical Characteristics and AC timing .....................................................................................................................26
18.1 Refresh Parameters by Device Density................................................................................................................. 26
18.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................ 26
18.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ................................................................. 26
18.3.1. Speed Bin Table Notes .................................................................................................................................. 30
19. Timing Parameters by Speed Grade ..........................................................................................................................31
19.1 Jitter Notes ............................................................................................................................................................37
19.2 Timing Parameter Notes........................................................................................................................................ 38
20. Physical Dimensions...................................................................................................................................................39
20.1 128Mbx8 based 128Mx72 Module (1 Rank) - M392B2873GB0 ............................................................................ 39
20.1.1. x72 DIMM, populated as one physical rank of x8 DDR3 SDRAMs ................................................................ 39
20.2 128Mbx8 based 256Mx72 Module (2 Ranks) - M392B5673GB0 .......................................................................... 40
20.2.1. x72 DIMM, populated as two physical ranks of x8 DDR3 SDRAMs .............................................................. 40
20.3 256Mbx4 based 256Mx72 Module (1 Rank) - M392B5670GB0 ............................................................................ 41
20.3.1. x72 DIMM, populated as one physical rank of x4 DDR3 SDRAMs ................................................................ 41
Tolerances.................................................................................................................................................... 15
REF
) and Strobe (DQS - DQS) ............................................. 16
- 3 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
1. DDR3 VLP Registered DIMM Ordering Information
Part Number
M392B2873GB0-CF8/H9/K0/MA
M392B5673GB0-CF8/H9/K0/MA
M392B5670GB0-CF8/H9/K0/MA
NOTE :
1. "##" - F8/H9/K0/MA
2. F8 - 1066Mbps 7-7-7 / H9 - 1333Mbps 9-9-9 / K0 - 1600Mbps 11-11-11 / MA - 1866Mbps 13-13-13
- DDR3-1866(13-13-13) is backward compatible to DDR3-1600(11-11-11), DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1600(11-11-11) is backward compatible to DDR3-1333(9-9-9), DDR3-1066(7-7-7)
- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)
2
Density Organization Component Composition
1GB 128Mx72
2GB 256Mx72
2GB 256Mx72
128Mx8(K4B1G0846G-BC##
128Mx8(K4B1G0846G-BC##
256Mx4(K4B1G0446G-BC##
1
1
1
)*9
)*18
)*18
Number of
Rank
1 18.75mm
2 18.75mm
1 18.75mm
2. Key Features
Speed
tCK(min) 2.5 1.875 1.5 1.25 1.07 ns
CAS Latency 6 7 9 11 13 nCK
tRCD(min) 15 13.125 13.5 13.75 13.91 ns
tRP(min) 15 13.125 13.5 13.75 13.91 ns
tRAS(min) 37.5 37.5 36 35 34 ns
tRC(min) 52.5 50.625 49.5 48.75 47.91 ns
DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866
6-6-6 7-7-7 9-9-9 11-11- 11 13-13-13
Height
Unit
• JEDEC standard 1.5V ± 0.075V Power Supply
= 1.5V ± 0.075V
•V
DDQ
• 400MHz f
900MHz f
• 8 independent internal bank
• Programmable
• Programmable Additive Latency(Posted
• Programmable
• Burst Length: 8 (Interleave without any limit, sequential with st
write [either On the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then T
• Asynchronous Reset
for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,
CK
for 1866Mb/sec/pin
CK
CAS Latency: 6,7,8,9,10,11,13
CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866)
CAS) : 0, CL - 2, or CL - 1 clock
arting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
85°C, 3.9us at 85°C < T
CASE
CASE
≤ 95°C
3. Address Configuration
Organization Row Address Column Address Bank Address Auto Precharge
256Mx4(1Gb) based Module A0-A13 A0-A9, A11 BA0-BA2 A10/AP
128Mx8(1Gb) based Module A0-A13 A0-A9 BA0-BA2 A10/AP
- 4 -
Rev. 1.01
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VLP Registered DIMM
datasheet DDR3 SDRAM
4. Registered DIMM Pin Configurations (Front side/Back side)
Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back
1
2
V
REFDQ
V
121
SS
122 DQ4 43 DQS8 163
3DQ0123DQ544
4DQ1124
5
6DQS
V
SS
125
0126
7DQS0127
8
V
SS
128 DQ6
9DQ2129DQ749
10 DQ3 130
11
V
SS
131 DQ12 51
12 DQ8 132 DQ13 52 BA2 172 NC 93 DQS
13 DQ9 133
14
15 DQS
V
SS
134
1135
16 DQS1 136
17
V
SS
137 DQ14 57
18 DQ10 138 DQ15 58 A5 178 A6 99 DQ48 219 DQ53
19 DQ11 139
20
V
SS
140 DQ20 60
21 DQ16 141 DQ21 61 A2 181 A1 102 DQS
22 DQ17 142
23
24 DQS
V
SS
143
2144
25 DQS2 145
26
V
SS
146 DQ22 66
27 DQ18 147 DQ23 67
28 DQ19 148
29
V
SS
149 DQ28 69
30 DQ24 150 DQ29 70 A10/AP 190 BA1
31 DQ25 151
32
33 DQS
V
SS
152
3153
34 DQS3 154
35
V
SS
155 DQ30 75
36 DQ26 156 DQ31 76 S1,NC 196 A13 117 SA0 237 SA1
37 DQ27 157
38
V
SS
158 CB4,NC 78
39 CB0,NC 159 CB5,NC 79 S2,NC 199
40 CB1,NC 160
41
V
SS
161
NOTE : NC = No internal Connection
V
SS
V
SS
DM0,DQS9
,TDQS9
NC,DQS
9
9
,TDQS
V
SS
V
SS
V
SS
DM1,DQS10
,TDQS10
NC,DQS
10
10
,TDQS
V
SS
V
SS
V
SS
DM2,DQS11
,TDQS11
NC,DQS
11
,TDQS
11
V
SS
V
SS
V
SS
DM3,DQS12
,TDQS12
NC,DQS
12
12
,TDQS
V
SS
V
SS
V
SS
DM8,DQS17
TDQS17,NC
42 DQS8162
V
SS
164 CB6,NC 84 DQS4 204
45 CB2,NC 165 CB7,NC 85 DQS4 205
46 CB3,NC 166
47
48
V
SS
, NC
V
TT
V
, NC
TT
167 NC(TEST) 87 DQ34 207 DQ39
168 RESET
KEY
169 CKE1, NC 90 DQ40 210 DQ45
50 CKE0 170
V
DD
171 NC 92
53 Err_Out/NC 173
54
V
DD
174 A12/BC 95
55 A11 175 A9 96 DQ42 216 DQ47
56 A7 176
V
DD
177 A8 98
59 A4 179
V
DD
62
V
DD
180 A3 101
182
63 NC, CK1 183
64 NC, CK
65
1 184 CK0 105 DQ50 225 DQ55
V
REFCA
V
DD
V
DD
185 CK0 106 DQ51 226
186
187 EVENT,NC 108 DQ56 228 DQ61
68 NC/Par_In 188 A0 109 DQ57 229
V
DD
189
71 BA0 191
72
73 WE
V
DD
192 RAS 113
193 S0 114 DQ58 234 DQ63
74 CAS 194
V
DD
195 ODT0 116
77 ODT1,NC 197
V
DD
80
V
SS
198 S3,NC 119 SA2 239
200 DQ36
81 DQ32 201 DQ37
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
NC,DQS
,TDQS
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
17
17
82 DQ33 202
83
86
V
SS
V
SS
203
206 DQ38
DM4,DQS13
88 DQ35 208
89
V
SS
209 DQ44
91 DQ41 211
V
SS
212
DM5,DQS14
5 213
94 DQS5 214
V
SS
215 DQ46
97 DQ43 217
V
SS
218 DQ52
100 DQ49 220
V
SS
221
DM6,DQS15
6 222
103 DQS6 223
104
107
110
111
V
SS
V
SS
V
SS
DQS7
224 DQ54
227 DQ60
230
231
112 DQS7 232
V
SS
233 DQ62
115 DQ59 235
V
SS
236
118 SCL 238 SDA
120
V
TT
240
V
SS
,TDQS13
NC,DQS
13
13
,TDQS
V
SS
V
SS
V
SS
,TDQS14
NC,DQS
14
,TDQS
14
V
SS
V
SS
V
SS
,TDQS15
NC,DQS
15
15
,TDQS
V
SS
V
SS
V
SS
DM7/DQS16
TDQS16
DM7,DQS
,TDQS
16
V
SS
V
SS
V
DDSPD
V
SS
V
TT
16
- 5 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
5. Pin Description
Pin Name Description Number Pin Name Description Number
CK0 Clock Input, positive line 1 ODT[1:0] On Die Termination Inputs 2
CK0
CKE[1:0] Clock Enables 2 CB[7:0] Data check bits Input/Output 8
RAS
CAS
WE
[3:0] Chip Selects 4
S
A[9:0],A11,
A[15:13]
A10/AP Address Input/Autoprecharge 1 EVENT
A12/BC
BA[2:0] SDRAM Bank Addresses 3 RESET
SCL Serial Presence Detect (SPD) Clock Input 1
SDA SPD Data Input/Output 1
SA[2:0] SPD Address Inputs 3
Par_In Parity bit for the Address and Control bus 1
Err_Out
NOTE :
*The V
and V
DD
Clock Input, negative line 1 DQ[63:0] Data Input/Output 64
Row Address Strobe 1 DQS[8:0] Data strobes 9
Column Address Strobe 1 DQS[8:0] Data strobes, negative line 9
DM[8:0]/
Write Enable 1
Address Inputs 2\14 RFU Reserved for Future Use 2
Address Input/Burst chop 1 TEST
Parity error found on the Address and Control
bus
pins are tied common to a single power-plane on these designs.
DDQ
1
DQS[17:9]
TDQS[17:9]
[17:9]
DQS
TDQS
V
DD
V
SS
V
REFDQ
V
REFCA
V
TT
V
DDSPD
Data Masks/ Data strobes,
Termination data strobes
Data strobes, negative line, Termination data
[17:9]
strobes
Reserved for optional hardware temperature
sensing
Memory bus test toll (Not Connected and Not
Usable on DIMMs)
Register and SDRAM control pin 1
Power Supply 22
Ground 59
Reference Voltage for DQ 1
Reference Voltage for CA 1
Termination Voltage 4
SPD Power 1
Total 240
9
9
1
1
6. ON DIMM Thermal Sensor
EVENT
NOTE : 1. All Samsung RDIMM support Thermal sensor on DIMM
2. When the SPD and the thermal sensor are placed on the module, R1 is placed but R2 is not.
When only the SPD is placed on the module, R2 is placed but R1 is not.
[ Table 1 ] Temperature Sensor Characteristics
Grade Range
75 < Ta < 95 - +/- 0.5 +/- 1.0
B
40 < Ta < 125 - +/- 1.0 +/- 2.0 -
-20 < Ta < 125 - +/- 2.0 +/- 3.0 -
Resolution 0.25 °C /LSB -
SCL
R1
0 Ω
WP/EVENT
SA0 SA1 SA2
R2
0 Ω
SA0 SA1 SA2
Min. Typ . Max.
SDA
Temperature Sensor Accuracy
Units NOTE
-
°C
- 6 -
Rev. 1.01
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VLP Registered DIMM
datasheet DDR3 SDRAM
7. Input/Output Functional Description
Symbol Typ e Polarity Function
CK0 Input
CK0
CKE[1:0] Input Active High
S
[3:0] Input Active Low
ODT[1:0] Input Active High On-Die Termination control signals
AS, CAS, WE Input Active Low
R
V
REFDQ
V
REFCA
BA[2:0] Input
A[15:13,
12/BC,11,
10/AP,9:0]
DQ[63:0],
CB[7:0]
DM[8:0]
DQS[17:0] I/O Positive Edge Positive line of the differential data strobe for input and output data.
DQS
[17:0] I/O Negative Edge Negative line of the differential data strobe for input and output data.
TDQS[17:9],
[17:9] OUT
TDQS
SA[2:0] IN
SDA I/O
SCL IN
EVENT
V
DDSPD
RESET
Par_In IN Parity bit for the Address and Control bus. ("1 " : Odd, "0 ": Even)
Err_Out
TEST Used by memory bus analysis tools (unused (NC) on memory DIMMs)
Input
Supply Reference voltage for DQ0-DQ63 and CB0-CB7
Supply Reference voltage for A0-A15, BA0-BA2, RAS, CAS, WE, S0, S1, CKE0, CKE1, Par_In, ODT0 and ODT1.
Input
I/O Data and Check Bit Input/Output pins
OUT
(open
drain)
Supply
IN
OUT
(open
drain)
Positive
Edge
Negative
Edge
Active Low
Positive line of the differential pair of system clock inputs that drives input to the on-DIMM Clock Driver.
Negative line of the differential pair of system clock inputs that drives the input to the on-DIMM Clock Driver.
CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers
and output drivers of the SDRAMs. Taking CKE LOW provides PRECHARGE POWER-DOWN
and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank)
Enables the associated SDRAM command decoder when low and disables decoder when high.
When decoder is disabled, new commands are ignored and previous operations continue.
These input signals also disable all outputs (except CKE and ODT) of the register(s) on the DIMM when both
inputs are high. When both S[1:0] are high, all register outputs (except CKE, ODT and Chip select) remain in
the previous state. For modules supporting 4 ranks, S[3:2] operate similarly to S[1:0] for a second set of register outputs.
When sampled at the positive rising edge of the clock, CAS
cuted by the SDRAM.
Selects which SDRAM bank of eight is activated.
BA0 - BA2 define to which bank an Active, Read, Write or Precharge command is being applied. Bank
address also determines mode register is to be accessed during an MRS cycle.
Provided the row address for Active commands and the column address and Auto Precharge bit for Read/
Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks
(A10 HIGH). If only one bank is to be precharged, the bank is selected by BA. A12 is also utilized for BL 4/8
identification for "BL on the fly" during CAS command. The address inputs also provide the op-code during
Mode Register Set commands.
Active High Masks write data when high, issued concurrently with input data.
, VSS Supply Power and ground for the DDR SDRAM input buffers and core logic.
V
DD
Supply Termination Voltage for Address/Command/Control/Clock nets.
V
TT
TDQS/TDQS
enable the same termination resistance function on TDQS/TDQS
abled via mode register A11=0 in MR1, DM/TDQS will provide the data mask function and TDQS is not used.
X4/X16 DRAMs must disable the TDQS function via mode register A11=0 in MR1
These signals are tied at the system planar to either V
address range.
This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor must be
connected from the SDA bus line to V
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected
from the SCL bus time to V
This signal indicates that a thermal event has been detected in the thermal sensing device.The system
should guarantee the electrical level requirement is met for the EVENT
Serial EEPROM positive power supply wired to a separate power pin at the connector which supports from
3.0 Volt to 3.6 Volt (nominal 3.3V) operation.
The RESET
low, all register outputs will be driven low and the Clock Driver clocks to the DRAMs and register(s) will be set
to low level (the Clock Driver will remain synchronized with the input clock)
Parity error detected on the Address and Control bus. A resistor may be connected from Err_Out
bus line to VDD on the system planar to act as a pull up.
is applicable for X8 DRAMs only. When enabled via Mode Register A11=1 in MR1, DRAM will
on the system planar to act as a pull-up.
DDSPD
on the system planar to act as a pull-up.
DDSPD
pin is connected to the RESET pin on the register and to the RESET pin on the DRAM. When
, RAS, and WE define the operation to be exe-
that is applied to DQS/DQS. When dis-
SS
or V
to configure the serial SPD EEPROM
DDSPD
pin on TS/SPD part.
- 7 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
8. Pinout Comparison Based On Module Type
Pin
48, 49
120, 240
53 Err_Out
63 NC
64 NC CK1
68 Par_In Connected to the register on all RDIMMs NC Not used on RDIMMs
76 S
77 ODT1, NC
79 S
167 NC TEST input used only on bus analysis probes NC
169 CKE1
171 A15
172 A14 A14
196 A13 A13
198 S
39, 40, 45, 46,
158, 159, 164,
165
125, 134, 143,
152, 161, 203,
212, 221, 230
126, 135, 144,
153, 162, 204,
213, 222, 231
187
NOTE : NC = No internal Connection
Signal NOTE Signal NOTE
V
TT
V
TT
1 Connected to the register on all RDIMMs S1
2, NC
3, NC
CBn Used on all RDIMMs; (n = 0...7) NC, CBn
DQSn,
TDQSn
DQS
TDQS
EVENT
NC
Additional connection for Termination Voltage for
Address/Command/Control/Clock nets.
Termination Voltage for Address/Command/Control/Clock nets.
Connected to the register on all RDIMMs NC Not
used on UDIMMs
Not used on RDIMMs
Connected to the register on dual- and quadrank
RDIMMs; NC on single-rank RDIMMs
Connected to the register on quad-rank
RDIMMs, not connected on single or dual rank
RDIMMs
Connected to the register on dual- and quadrank
RDIMMs; NC on single-rank RDIMMs
Connected to the register on all RDIMMs
Connected to the register on quad-rank
RDIMMs, not connected on single-or dual-rank
RDIMMs
Connected to DQS on x4 SDRAMs,
TDQS on x8 SDRAMs on RDIMMs; (n = 9...17)
n,
Connected to DQS
SDRAMs on RDIMMs; (n=9...17)
n
Connected to optional thermal sensing component.
NC on Modules without a thermal sensing
component.
RDIMM UDIMM
NC Not used on UDIMMs
Termination Voltage for Address/Command/Control/Clock nets.
Used for 2 rank UDIMMs, not used on single-rank
UDIMMs, but terminated
Used for dual-rank UDIMMs, not connected
on single-rank UDIMMs
Used for dual-rank UDIMMs, not connected
on single-rank UDIMMs
TEST input used only on bus analysis
probes
Used for dual-rank UDIMMs, not connected
on single-rank UDIMMs
connected to SDRAMs on UDIMMs. However,
these signals are terminated on
UDIMMs. A15 not routed on some RCs
Used on x72 UDIMMs, (n = 0...7); not
used on x64 UDIMMs
Connected to DM on x8 DRAMs, UDM or
LDM on x16 DRAMs on UDIMMs;
(n = 0...8)
on x4 DRAMs, TDQS on x8
V
TT
NC NC Not used on UDIMMs
CK1
ODT1,NC
NC Not used on UDIMMs
CKE1,
NC
A15, NC Depending on device density, may not be
NC Not used on UDIMMs
DMn
NC Not used on UDIMMs
NC Not used on UDIMMs
- 8 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
9. Registering Clock Driver Specification
9.1 Timing & Capacitance values
TC = TBD
V
Symbol Parameter Conditions
fclock Input Clock Frequency application frequency 300 670 MHz
t
C
IN
C
IN
C
IN
CH/tCL
t
ACT
t
SU
t
H
t
PDM
t
DIS
t
EN
(DATA)
(CLOCK)
(RST)
Pulse duration, CK, CK HIGH or LOW 0.4 -
Inputs active time4 before RESET is taken HIGH
Setup time Input valid before CK/CK 100 - ps
Hold time
Propagation delay, single-bit switching CK/CK to output 0.65 1.0 ns
output disable time(1/2-Clock pre-launch)
output disable time(3/4-Clock pre-launch) 0.25 -
output enable time(1/2-Clock pre-launch)
output enable time(3/4-Clock pre-launch) - 0.25
Data Input Capacitance 1.5 2.5
Data Input Capacitance 2 3
Reset Input Capacitance - 3
DCKE0/1 = LOW and
DCS0/1
= HIGH
Input to remain Valid after CK/
CK
to output float
CK/CK
CK/CK
to output driving
= 1.5 ± 0.075V
DD
Min Max
8-
175 -
0.5 -
-0.5
Units Notes
t
CK
t
CK
t
CK
t
CK
pF
9.2 Clock driver Characteristics
Symbol Parameter Conditions
(cc)
t
jit
t
t
t
jit
t
jit
t
t
t
STAB
t
fdyn
CKsk
(per)
(hper)
Qsk1
Qsk1
dynoff
Cycle-to-cycle period jitter 0 40 ps
Stabilization time -6us
Dynamic phase offset -50 50 ps
Clock Output skew 50 ps
Yn Clock Period jitter -40 40 ps
Half period jitter -50 50 ps
Qn Output to clock tolerance (Standard 1/2 -Clock
Pre-Launch)
Output clock tolerance (3/4 Clock Pre-Launch)
Maximum re-driven dynamic clock off-set -80 80 ps
Output Inversion enabled -100 200
OUtput Inversion disabled -100 300
Output Inversion enabled -100 200
OUtput Inversion disabled -100 300
TC = TBD
V
= 1.5 ± 0.075V
DD
Min Max
Units Notes
ps
ps
- 9 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
10. Function Block Diagram:
10.1 1GB, 128Mx72 Module (Populated as 1 rank of x8 DDR3 SDRAMs)
RS0A
RRASA
RCASA
RWEA
PCK0A
PCK0A
RCLE0A
RODT0A
A[N:0]A
DQS8
DQS8
DM8/DQS17
DQS
CB[7:0]
DQS3
DQS3
DM3/DQS12
DQS12
DQ[31:24]
DQS2
DQS2
DM2/DQS11
DQS11
DQ[23:16]
DQS1
DQS1
DM1/DQS10
DQS10
DQ[15:8]
DQS0
DQS0
DM0/DQS9
DQS9
DQ[7:0]
/BA[N:0]A
DQS
DQS
TDQS
17
Vtt
TDQS
DQ[7:0]
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
CS
D8
RAS
CASWECKCKCKE
D3
RAS
CASWECKCKCKE
D2
RAS
CASWECKCKCKE
D1
RAS
CASWECKCKCKE
D0
RAS
CASWECKCKCKE
ZQ
ODT
ZQ
ODT
ZQ
ODT
ZQ
ODT
ZQ
ODT
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
DQS4
DQS4
DM4/DQS13
DQS
DQ[39:32]
DQS5
DQS5
DM5/DQS14
DQS14
DQ[47:40]
DQS6
DQS6
DM6/DQS15
DQS15
DQ[55:48]
DQS7
DQS7
DM7/DQS16
DQS16
DQ[63:56]
13
Vtt
RS0B
RRASB
RCASB
RWEB
PCK0B
PCK0B
RCLE0B
RODT0B
A[N:0]B
/BA[N:0]B
DQS
DQS
TDQS
TDQS
DQ[7:0]
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
CS
D4
RAS
CASWECKCKCKE
D5
RAS
CASWECKCKCKE
D6
RAS
CASWECKCKCKE
D7
RAS
CASWECKCKCKE
ZQ
ODT
ZQ
ODT
ZQ
ODT
ZQ
ODT
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
NOTE :
1. ZQ resistors are 240Ω ± 1% For all other resistor values refer to the appropriate
wiring diagram.
Thermal sensor with SPD
SCL
EVENT EVENT
V
DDSPD
V
DD
V
TT
V
REFCA
V
REFDQ
V
SS
A0
A1 A2
SA0 SA1 SA2
SDA
Serial PD
D0 - D8
D0 - D8
D0 - D8
D0 - D8
S0* RS0A-> CS0 : SDRAMs D[3:0], D8
S1*
BA[N:0]
A[N:0]
RAS
CAS
WE
CKE0
ODT0
PAR_IN
1:2
CK0
CK0
QERR
RST
**
RESET
*S[3:2], CKE1, ODT1, CK1 and CK1 are NC
(Unused register inputs ODT1 and CKE1 have a 330 ohm resistor to ground)
RS0B-> CS0 : SDRAMs D[7:4]
RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D8
RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4]
RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D8
RA[N:0]B -> A[N:0] : SDRAMs D[7:4]
R
E
G
I
S
T
E
R
-> RAS : SDRAMs D[7:4]
RRASB
RCASA
-> CAS : SDRAMs D[3:0], D8
RCASB
-> CAS : SDRAMs D[7:4]
RWEA
-> WE : SDRAMs D[3:0], D8
RWEB
-> WE : SDRAMs D[7:4]
RCKE0A -> CKE0 : SDRAMs D[3:0], D8
RCKE0B -> CKE0 : SDRAMs D[7:4]
-> RAS : SDRAMs D[3:0], D8
RRASA
RODT0A -> ODT0 : SDRAMs D[3:0], D8
RODT0B -> ODT0 : SDRAMs D[7:4]
PCK0A -> CK : SDRAMs D[3:0], D8
PCK0A -> CK : SDRAMs D[7:4]
PCK
0A -> CK : SDRAMs D[3:0], D8
PCK
0A -> CK : SDRAMs D[7:4]
Err_out
** : SDRAMs D[8:0]
RST
- 10 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
10.2 2GB, 256Mx72 Module (Populated as 2 ranks of x8 DDR3 SDRAMs)
RS0A
RRASA
RCASA
RWEA
PCK0A
PCK0A
RCKE0A
RODT0A
A[N:0]A
DQS8
DQS8
DM8/DQS17
DQS17
CB[7:0]
DQS3
DQS3
DM3/DQS12
DQS12
DQ[31:24]
DQS2
DQS2
DM2/DQS11
DQS11
DQ[23:16]
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
D8
RAS
CASWECKCKCKE
D3
RAS
CASWECKCKCKE
D2
RAS
CASWECKCKCKE
ODT
ODT
ODT
/BA[N:0]A
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
RS1A
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
D17
RAS
CASWECKCKCKE
D12
RAS
CASWECKCKCKE
D11
RAS
CASWECKCKCKE
PCK1A
PCK1A
RCKE1A
RODT1A
ODT
ODT
ODT
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
DQS4
DQS4
DM4/DQS13
DQS13
DQ[39:32]
DQS5
DQS5
DM5/DQS14
DQS14
DQ[47:40]
DQS6
DQS6
DM6/DQS15
DQS15
DQ[55:48]
RS0B
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
CS
CS
RRASB
RAS
RAS
RAS
RCASB
RWEB
PCK0B
PCK0B
D4
CASWECKCKCKE
D5
CASWECKCKCKE
D6
CASWECKCKCKE
RCKE0B
RODT0B
A[N:0]B
/BA[N:0]B
ODT
A[N:0]/BA[N:0]
ODT
A[N:0]/BA[N:0]
ODT
A[N:0]/BA[N:0]
RS1B
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
D13
RAS
CASWECKCKCKE
D14
RAS
CASWECKCKCKE
RAS
CASWECKCKCKE
D15
RAS
CASWECKCKCKE
PCK1B
PCK1B
RCKE1B
RODT1B
ODT
A[N:0]/BA[N:0]
ODT
A[N:0]/BA[N:0]
ODT
A[N:0]/BA[N:0]
ODT
A[N:0]/BA[N:0]
DQS1
DQS1
DM1/DQS10
DQS10
DQ[15:8]
DQS0
DQS0
DM0/DQS9
DQS9
DQ[7:0]
Vtt
V
DDSPD
V
DD
V
TT
V
REFCA
V
REFDQ
V
SS
NOTE :
1. Unless otherwise noted, resistor values are 15Ω ± 5%.
2. RS0 and RS1 alternate between the back and front sides of the DIMM.
3. ZQ resistors are 240Ω ± 1% . For all other resistor values refer to the appropriate
wiring diagram.
4. See the wiring diagrams for all resistors associated with the command, address
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
DQS
DQS
TDQS
TDQS
DQ[7:0]
ZQ
CS
D1
RAS
CASWECKCKCKE
D0
RAS
CASWECKCKCKE
ODT
A[N:0]/BA[N:0]
ODT
A[N:0]/BA[N:0]
Serial PD
D0 - D17
D0 - D17
D0 - D17
D0 - D17
DQS
DQS
TDQS
D10
TDQS
DQ[7:0]
ZQ
CS
RAS
CASWECKCKCKE
DQS
DQS
TDQS
D9
TDQS
DQ[7:0]
ZQ
CS
RAS
CASWECKCKCKE
Thermal sensor with SPD
SCL
EVENT EVENT
ODT
ODT
A0
SA0 SA1 SA2
DM7/DQS16
DQ[63:56]
A[N:0]/BA[N:0]
A[N:0]/BA[N:0]
A1 A2
DQS7
DQS7
DQS16
and control bus.
DQS
DQS
TDQS
TDQS
DQ[7:0]
Vtt
SDA
PAR_IN
D7
ZQ
CS
RAS
CASWECKCKCKE
S0* RS0A-> CS0 : SDRAMs D[3:0], D8
S1*
BA[N:0]
A[N:0]
RAS
CAS
WE
CKE0
CKE1
ODT0
ODT1
RESET
ODT
CK0
CK0
**
DQS
DQS
TDQS
D16
TDQS
DQ[7:0]
ZQ
A[N:0]/BA[N:0]
RST
1:2
R
E
G
I
S
T
E
R
QERR
CS
RAS
CASWECKCKCKE
RS
0B-> CS0 : SDRAMs D[7:4]
1A-> CS1 : SDRAMs D[12:9], D17
RS
RS1B-> CS1 : SDRAMs D[16:13]
RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D[12:8], D17
RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4], D[16:13]
RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D[12:8], D17
RA[N:0]B -> A[N:0] : SDRAMs D[7:4, D[16:13]]
RRASA
RRASB
RCASA
RCASB
RWEA
RWEB
RCKE0A -> CKE0 : SDRAMs D[3:0], D8
RCKE0B -> CKE0 : SDRAMs D[7:4]
RCKE1A -> CKE1 : SDRAMs D[12:9], D17
RCKE1B -> CKE1 : SDRAMs D[16:13]
RODT0A -> ODT0 : SDRAMs D[3:0], D8
RODT0B -> ODT0 : SDRAMs D[7:4]
RODT1A -> ODT1 : SDRAMs D[12:9], D17
RODT1A -> ODT1 : SDRAMs D[16:13]
PCK0A -> CK : SDRAMs D[3:0], D8
PCK0B -> CK : SDRAMs D[7:4]
PCK1A -> CK : SDRAMs D[12:9], D17
PCK1B -> CK : SDRAMs D[16:13]
PCK
PCK
PCK1A -> CK : SDRAMs D[12:9], D17
PCK
Err_out
RST
** : SDRAMs D[8:0]
ODT
A[N:0]/BA[N:0]
-> RAS : SDRAMs D[3:0], D[12:8], D17
-> RAS : SDRAMs D[7:4], D[16:13]
-> CAS : SDRAMs D[3:0], D[12:8], D17
-> CAS : SDRAMs D[7:4], D[16:13]
-> WE : SDRAMs D[3:0], D[12:8], D17
-> WE : SDRAMs D[7:4], D[16:13]
0A -> CK : SDRAMs D[3:0], D8
0B -> CK : SDRAMs D[7:4]
1B -> CK : SDRAMs D[16:13]
*S[3:2], CKE1, ODT1, CK1 and CK1 are NC
- 11 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
10.3 2GB, 256Mx72 Module (Populated as 1 rank of x4 DDR3 SDRAMs)
DQS8
DQS8
VSS
CB[3:0]
DQS3
DQS
VSS
DQ[27:24]
DQ[27:24]
DQS8
DQS8
VSS
DQ[19:16]
DQ[19:16]
RRASA
PCK0A
PCK0A
RCKE0A
RODT0A
A[N:0]A
RS0A
RCASA
RWEA
DQS
DQS
DM
D8
DQ[3:0]
CS
RAS
CASWECKCKCKE
DQS
DQS
3
DM
D3
DQ[3:0]
CS
RAS
CASWECKCKCKE
DQS
DQS
DM
D2
DQ[3:0]
CS
RAS
CASWECKCKCKE
/BA[N:0]A
ZQ
ODT
A[N:0]/BA[N:0]
ZQ
ODT
A[N:0]/BA[N:0]
ZQ
ODT
A[N:0]/BA[N:0]
VSS
DQ[31:28]
VSS
DQ[23:20]
VSS
DQS17
DQS17
VSS
CB[7:4]
DQS17
DQS
VSS
DQS17
DQS17
VSS
DQS
DQS
DM
DQ[3:0]
CS
RAS
CASWECKCKCKE
DQS
17
DQS
DM
DQ[3:0]
CS
DQS
DQS
DM
DQ[3:0]
CS
RAS
CASWECKCKCKE
RAS
CASWECKCKCKE
ZQ
D17
ODT
ZQ
D12
ODT
ZQ
D11
ODT
DQ[35:32]
VSS
A[N:0]/BA[N:0]
DQ[43:40]
VSS
A[N:0]/BA[N:0]
DQ[51:48]
VSS
A[N:0]/BA[N:0]
DQS8
DQS8
VSS
DQS8
DQS
VSS
DQS8
DQS8
VSS
8
RS0B
DQS
DQS
DM
DQ[3:0]
CS
DQS
DQS
DM
DQ[3:0]
CS
DQS
DQS
DM
DQ[3:0]
CS
RRASB
RCASB
RWEB
D4
RAS
CASWECKCKCKE
D5
RAS
CASWECKCKCKE
D6
RAS
CASWECKCKCKE
PCK0B
PCK0B
RCKE0B
RODT0B
A[N:0]B
/BA[N:0]B
ZQ
ODT
A[N:0]/BA[N:0]
ZQ
ODT
A[N:0]/BA[N:0]
ZQ
ODT
A[N:0]/BA[N:0]
DQ[39:36]
VSS
DQ[47:44]
VSS
DQ[55:52]
VSS
DQS17
DQS17
VSS
DQS17
DQS
VSS
DQS17
DQS17
VSS
DQS
DQS
DM
DQ[3:0]
CS
RAS
CASWECKCKCKE
DQS
17
DQS
DM
DQ[3:0]
CS
DQS
DQS
DM
DQ[3:0]
CS
RAS
CASWECKCKCKE
RAS
CASWECKCKCKE
D13
D14
D15
ZQ
ODT
A[N:0]/BA[N:0]
ZQ
ODT
A[N:0]/BA[N:0]
ZQ
ODT
A[N:0]/BA[N:0]
VSS
VSS
VSS
D1
D0
A1 A2
ZQ
ODT
ZQ
ODT
DQS17
DQS17
VSS
DQ[15:12]
VSS
A[N:0]/BA[N:0]
DQS17
DQS
17
VSS
DQ[7:4]
VSS
A[N:0]/BA[N:0]
V
DDSPD
V
DD
SDA
V
TT
V
REFCA
V
REFDQ
V
SS
DQS
DQS
DM
DQ[3:0]
CS
DQS
DQS
DM
DQ[3:0]
CS
D10
RAS
CASWECKCKCKE
D9
RAS
CASWECKCKCKE
DQS8
DQS8
VSS
DQ[11:8]
DQS8
DQS
8
VSS
DQ[3:0]
Vtt
Thermal sensor with SPD
SCL
EVENT EVENT
DQS
DQS
DM
DQ[3:0]
CS
RAS
DQS
DQS
DM
DQ[3:0]
CS
RAS
A0
SA0 SA1 SA2
CASWECKCKCKE
CASWECKCKCKE
NOTE :
1. Unless otherwise noted, resistor values are 15Ω ± 5%.
2. See the wiring diagrams for all resistors associated with the command, address
and control bus.
3. ZQ resistors are 240Ω ± 1% . For all other resistor values refer to the appropriate
wiring diagram.
ZQ
ODT
A[N:0]/BA[N:0]
ZQ
ODT
A[N:0]/BA[N:0]
Serial PD
D0 - D17
D0 - D17
D0 - D17
D0 - D17
DQ[59:56]
VSS
VSS
D7
RST
1:2
R
E
G
I
S
T
E
R
QERR
ZQ
ODT
RST
DQS17
DQS17
VSS
DQ[63:60]
VSS
A[N:0]/BA[N:0]
RS0B-> CS0 : SDRAMs D[7:4], D[16:13]]
RBA[N:0]A -> BA[N:0] : SDRAMs D[3:0], D[12:8], D17
RBA[N:0]B -> BA[N:0] : SDRAMs D[7:4], D[16:13]
RA[N:0]A -> A[N:0] : SDRAMs D[3:0], D[12:8], D17
RA[N:0]B -> A[N:0] : SDRAMs D[7:4], D[16:13]
RRASA
-> RAS : SDRAMs D[3:0], D[12:8], D17
RRASB
-> RAS : SDRAMs D[7:4], D[16:13]
RCASA
-> CAS : SDRAMs D[3:0], D[12:8], D17
RCASB
-> CAS : SDRAMs D[7:4], D[16:13]
-> WE : SDRAMs D[3:0], D[12:8], D17
RWEA
-> WE : SDRAMs D[7:4], D[16:13]
RWEB
RCKE0A -> CKE0 : SDRAMs D[3:0], D[12:8], D17
RCKE0B -> CKE0 : SDRAMs D[7:4], D[16:13]
RODT0A -> ODT0 : SDRAMs D[3:0], D[12:8], D17
RODT0B -> ODT0 : SDRAMs D[7:4], D[16:13]
PCK0A -> CK : SDRAMs D[3:0], D[12:8], D17
PCK0B -> CK : SDRAMs D[7:4], D[16:13]
0A -> CK : SDRAMs D[3:0], D[12:8], D17
PCK
0B -> CK : SDRAMs D[7:4], D[16:13]
PCK
Err_out
** : SDRAMs D[17:0]
DQS8
DQS8
VSS
DQS
DQS
DM
DQ[3:0]
CS
RAS
CASWECKCKCKE
Vtt
S0* RS0A-> CS0 : SDRAMs D[3 :0], D[12:8], D17
S1*
BA[N:0]
A[N:0]
RAS
CAS
WE
CKE0
ODT0
CK0
CK0
PAR_IN
RESET
**
*S[3:2], CKE1, ODT1, CK1 and CK1 are NC
(Unused register inputs ODT1 and CKE1 have a 330
DQS
DQS
DM
D16
DQ[3:0]
CS
RAS
CASWECKCKCKE
Ω
resistor to ground)
ZQ
ODT
VSS
A[N:0]/BA[N:0]
- 12 -
Rev. 1.01
http://www.BDTIC.com/SAMSUNG
VLP Registered DIMM
datasheet DDR3 SDRAM
11. Absolute Maximum Ratings
11.1 Absolute Maximum DC Ratings
Symbol Parameter Rating Units NOTE
V
DD
Voltage on V
V
DDQ
V
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the cente
3. V
DD
equal to or less than 300mV.
Voltage on any pin relative to V
IN, VOUT
Storage Temperature -55 to +100 °C 1, 2
T
STG
and V
DDQ
Voltage on VDD pin relative to V
pin relative to V
DDQ
must be within 300mV of each other at all times; and V
SS
SS
SS
r/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
cause permanent damage to the device. This is a stress rating only and functional operation of the
must be not greater than 0.6 x V
REF
11.2 DRAM Component Operating Temperature Range
Symbol Parameter rating Unit NOTE
T
OPER
NOTE :
1. Operating Temperature T
JESD51-2.
2. The Normal Temperature Range specifies the temperatures where al
tained between 0-85°C u
3. Some applications require operation of the Extended Temperature Range between 85°C
following additional conditions apply:
a) Refresh commands must be doubled in frequency, theref
b) If Self-Refresh operation is required in the Extended Temperature Rang
Range capability (MR2 A6 = 0b and MR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperature range.
is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the JEDEC document
OPER
nder all operating conditions
Operating Temperature Range 0 to 95 °C 1, 2, 3
l DRAM specifications will be supported. During operation, the DRAM case temperature must be main-
ore reducing the refresh interval tREFI to 3.9us.
e, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature
-0.4 V ~ 1.975 V V 1,3
-0.4 V ~ 1.975 V V 1,3
-0.4 V ~ 1.975 V V 1
, When VDD and V
DDQ
and 95°C case temperature. Full specifications are guaranteed in this range, but the
are less than 500mV; V
DDQ
REF
may be
12. AC & DC Operating Conditions
12.1 Recommended DC Operating Conditions (SSTL-15)
Symbol Parameter
V
DD
V
DDQ
NOTE:
1. Under all conditions V
2. V
tracks with VDD. AC parameters are measured with VDD and V
DDQ
Supply Voltage 1.425 1.5 1.575 V 1,2
Supply Voltage for Output 1.425 1.5 1.575 V 1,2
must be less than or equal to VDD.
DDQ
tied together.
DDQ
Min. Typ . Max.
Rating
Units NOTE
- 17 -
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