Philips MF1011B900Y Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

MF1011B900Y

Microwave power transistor

Product specification
Supersedes data of December 1994

1997 Feb 18

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

FEATURES

• Suitable for short and medium
pulse applications up to 100 µs
pulse width, duty factor 10%

• Diffused emitter ballasting resistors
improve ruggedness

• Interdigitated emitter-base
structure provides high emitter
efficiency

• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime

• Multicell geometry improves power
sharing and reduces thermal
resistance

• Internal input and output
prematching networks allow an
easier design of circuits.

APPLICATIONS

Intended for use in common base
class C broadband pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the
1030 MHz to 1090 MHz band. Also
suitable for medium pulse, heavy duty
operation within this band.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common-base class C

mb

narrowband amplifier.

MODE OF

OPERATION

Class C t

CONDITIONS

=10µs;

p

f

(GHz)

1.09 50 800 ≥6 ≥40

δ =1%

PINNING - SOT448A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, 4 columns

Top view

1

2

V

CC

(V)

33

MAM045

b

P

(W)

G

L

(dB)

c

e

η

p

C

(%)

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with base connected
to flange.

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

CEO

V

EBO

I

CM

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0 − 65 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
peak collector current tp=10µs; δ =1% − 50 A
total power dissipation Tmb<75°C; tp≤ 10 µs; δ≤1% − 1750 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

1800

handbook, halfpage

P

tot

(W)

1200

600

0

tp=10µs; δ = 1%.

05050 100 200

150

T ( C)

mb

Fig.2 Power derating curve.

MLC721

o

1997 Feb 18 3

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th

Notes

1. See

“Mounting recommendations in the General part of handbook SC19a”

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

V

(BR)CBO

V

(BR)CES

thermal resistance from junction to mounting base Tj= 120 °C 0.84 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp=10µs;δ = 1%;

0.01 K/W

notes 1and 2

.

collector cut-off current IE= 0; VCB=50V 27 mA
collector cut-off current VBE= 0; VCE= 50 V 27 mA
emitter cut-off current IC= 0; VEB= 1.5 V 7 mA
collector-base breakdown voltage IC= 180 mA 65 V
collector-emitter breakdown voltage IC= 180 mA; VBE= 0 65 V

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

Class C

t

p

t

p

t

p

t

p

CONDITIONS

=10µs; δ = 1% 1.09 50 ≥800

= 0.5 µs; δ = 50%
=112µs; δ =1%
=32µs; δ = 1% 1.09 50 typ. 870 typ. 6.3 typ. 46

=25°C in a common-base test circuit as shown in Fig.3.

mb

f

(GHz)

V

(V)

CC

P

(W)

typ. 900

1.03 to 1.09 50 typ. 750 typ. 5.7 typ. 36

L

G

p

(dB)

≥6

typ. 6.5

η

C

(%)

≥40

typ. 48

1997 Feb 18 4