IP4281CZ10
ESD protection for high-speed interfaces
Rev. 01 — 25 September 2008 |
Product data sheet |
1.Product profile
The IP4281CZ10 is designed for HDMI interface protection. The device includes high-level ElectroStatic Discharge (ESD) protection diodes for the TMDS signal lines.
All TMDS intra-pairs are protected by a special diode configuration offering a low line capacitance of only 0.7 pF. These diodes provide protection to downstream components from ESD voltages up to ±8 kV contact according to IEC 61000-4-2, level 4.
nPb-free, RoHS compliant and free of Halogen and Antimony (dark green compliant)
nESD protection for HDMI and other LVDS data lines
nAll TMDS lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±8 kV according to IEC61000-4-2, level 4
nMatched 0.5 mm trace spacing
nTMDS lines with ≤ 0.05 pF matching capacitance between TMDS pairs
nLine capacitance of only 0.7 pF for each channel
n4-channel, 10-terminal Ultra-Thin Leadless Package (UTLP)
nHDMI 1.3a compliant
The IP4281CZ10 is designed for HDMI receiver and transmitter port protection:
nTV, monitor
nNotebook, main board graphics card and ports
nSet-top box and game consoles
nDVD recorder and player
NXP Semiconductors |
|
IP4281CZ10 |
||
|
|
|
ESD protection for high-speed interfaces |
|
2. |
Pinning information |
|
|
|
|
|
|
|
|
Table 1. Pinning |
|
|
|
|
|
|
|
|
|
Pin |
Symbol |
Description |
Simplified outline |
Graphic symbol |
1 |
TMDS_CH1− negative channel 1 ESD protection |
|
|
2 |
TMDS_CH1+ |
positive channel 1 ESD protection |
3 |
GND |
GND |
|
|
|
4 |
TMDS_CH2− |
negative channel 2 ESD protection |
|
|
|
5 |
TMDS_CH2+ |
positive channel 2 ESD protection |
|
|
|
6 |
n.c. |
not connected |
|
|
|
7 |
n.c. |
not connected |
|
|
|
8 |
GND |
GND |
|
|
|
9 |
n.c. |
not connected |
|
|
|
10 |
n.c. |
not connected |
110
29
38
47
56
1 |
2 |
4 |
5 |
|
3, 8 |
001aai619 |
Transparent top view
Table 2. Ordering information
Type number |
Package |
|
|
|
Name |
Description |
Version |
IP4281CZ10 |
XSON10U |
plastic extremely thin small outline package; no leads; |
SOT1059-1 |
|
|
10 terminals; UTLP based; body 1 × 2.5 × 0.5 mm |
|
|
|
|
|
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VI |
input voltage |
|
GND − 0.5 |
+3.63 |
V |
Vesd |
electrostatic discharge |
all pins to ground; |
|
|
|
|
voltage |
IEC 61000-4-2, level 4 |
|
|
|
|
|
|
|
|
|
|
|
contact |
−8 |
+8 |
kV |
|
|
|
|
|
|
|
|
air discharge |
−15 |
+15 |
kV |
|
|
|
|
|
|
Tstg |
storage temperature |
|
−55 |
+125 |
°C |
Table 4. |
Operating conditions |
|
|
|
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
Tamb |
ambient temperature |
|
−40 |
+85 |
°C |
IP4281CZ10_1 |
© NXP B.V. 2008. All rights reserved. |
Product data sheet |
Rev. 01 — 25 September 2008 |
2 of 8 |
NXP Semiconductors |
|
|
|
IP4281CZ10 |
||||||
|
|
|
|
ESD protection for high-speed interfaces |
||||||
6. Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Table 5. |
Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Symbol |
Parameter |
Conditions |
|
|
|
|
Min |
Typ |
Max |
Unit |
VBRzd |
Zener diode breakdown voltage |
I = 1 mA |
|
|
|
|
6 |
- |
9 |
V |
ILRzd |
Zener diode reverse leakage current |
per TMDS channel; V = 3.0 V |
|
|
- |
- |
1 |
μA |
||
VF |
forward voltage |
|
|
|
|
|
- |
0.7 |
- |
V |
Cch(TMDS) |
TMDS channel capacitance |
f = 1 MHz; Vbias = 2.5 V |
[1] |
- |
0.7 |
- |
pF |
|||
|
|
|||||||||
C |
TMDS channel capacitance difference |
f = 1 MHz; V |
bias |
= 2.5 V |
[1] |
- |
0.05 |
- |
pF |
|
ch(TMDS) |
|
|
|
|
|
|
|
|
|
|
Cch(mutual) |
mutual channel capacitance |
between signal pin and pin n.c.; |
[1] |
- |
0.07 |
- |
pF |
|||
|
|
|||||||||
|
|
f = 1 MHz; Vbias = 2.5 V |
|
|
|
|
|
|
||
Rdyn |
dynamic resistance |
I = 1 A, Tamb = 25 °C; IEC 61000-4-5/9 |
|
|
|
|
|
|
||
|
|
positive transient |
|
|
- |
2.4 |
- |
Ω |
||
|
|
|
|
|
|
|
|
|
||
|
|
negative transient |
|
|
- |
1.3 |
- |
Ω |
||
|
|
|
|
|
|
|
|
|||
VCL(ch)trt(pos) positive transient channel clamping |
Vesd = 8 kV HBM; Tamb = 25 °C |
|
|
- |
8 |
- |
V |
|||
|
voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
[1]This parameter is guaranteed by design.
IP4281CZ10_1 |
© NXP B.V. 2008. All rights reserved. |
Product data sheet |
Rev. 01 — 25 September 2008 |
3 of 8 |