Philips IP4281CZ10 Datasheet

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IP4281CZ10

ESD protection for high-speed interfaces

Rev. 01 — 25 September 2008

Product data sheet

1.Product profile

1.1General description

The IP4281CZ10 is designed for HDMI interface protection. The device includes high-level ElectroStatic Discharge (ESD) protection diodes for the TMDS signal lines.

All TMDS intra-pairs are protected by a special diode configuration offering a low line capacitance of only 0.7 pF. These diodes provide protection to downstream components from ESD voltages up to ±8 kV contact according to IEC 61000-4-2, level 4.

1.2 Features

nPb-free, RoHS compliant and free of Halogen and Antimony (dark green compliant)

nESD protection for HDMI and other LVDS data lines

nAll TMDS lines with integrated rail-to-rail clamping diodes for downstream ESD protection of ±8 kV according to IEC61000-4-2, level 4

nMatched 0.5 mm trace spacing

nTMDS lines with 0.05 pF matching capacitance between TMDS pairs

nLine capacitance of only 0.7 pF for each channel

n4-channel, 10-terminal Ultra-Thin Leadless Package (UTLP)

nHDMI 1.3a compliant

1.3Applications

The IP4281CZ10 is designed for HDMI receiver and transmitter port protection:

nTV, monitor

nNotebook, main board graphics card and ports

nSet-top box and game consoles

nDVD recorder and player

Philips IP4281CZ10 Datasheet

NXP Semiconductors

 

IP4281CZ10

 

 

 

ESD protection for high-speed interfaces

2.

Pinning information

 

 

 

 

 

 

Table 1. Pinning

 

 

 

 

 

 

 

 

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

TMDS_CH1negative channel 1 ESD protection

 

 

2

TMDS_CH1+

positive channel 1 ESD protection

3

GND

GND

 

 

 

4

TMDS_CH2

negative channel 2 ESD protection

 

 

 

5

TMDS_CH2+

positive channel 2 ESD protection

 

 

 

6

n.c.

not connected

 

 

 

7

n.c.

not connected

 

 

 

8

GND

GND

 

 

 

9

n.c.

not connected

 

 

 

10

n.c.

not connected

110

29

38

47

56

1

2

4

5

 

3, 8

001aai619

Transparent top view

3. Ordering information

Table 2. Ordering information

Type number

Package

 

 

 

Name

Description

Version

IP4281CZ10

XSON10U

plastic extremely thin small outline package; no leads;

SOT1059-1

 

 

10 terminals; UTLP based; body 1 × 2.5 × 0.5 mm

 

 

 

 

 

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VI

input voltage

 

GND 0.5

+3.63

V

Vesd

electrostatic discharge

all pins to ground;

 

 

 

 

voltage

IEC 61000-4-2, level 4

 

 

 

 

 

 

 

 

 

 

 

contact

8

+8

kV

 

 

 

 

 

 

 

 

air discharge

15

+15

kV

 

 

 

 

 

 

Tstg

storage temperature

 

55

+125

°C

5. Recommended operating conditions

Table 4.

Operating conditions

 

 

 

 

Symbol

Parameter

Conditions

Min

Max

Unit

Tamb

ambient temperature

 

40

+85

°C

IP4281CZ10_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 25 September 2008

2 of 8

NXP Semiconductors

 

 

 

IP4281CZ10

 

 

 

 

ESD protection for high-speed interfaces

6. Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table 5.

Characteristics

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Conditions

 

 

 

 

Min

Typ

Max

Unit

VBRzd

Zener diode breakdown voltage

I = 1 mA

 

 

 

 

6

-

9

V

ILRzd

Zener diode reverse leakage current

per TMDS channel; V = 3.0 V

 

 

-

-

1

μA

VF

forward voltage

 

 

 

 

 

-

0.7

-

V

Cch(TMDS)

TMDS channel capacitance

f = 1 MHz; Vbias = 2.5 V

[1]

-

0.7

-

pF

 

 

C

TMDS channel capacitance difference

f = 1 MHz; V

bias

= 2.5 V

[1]

-

0.05

-

pF

ch(TMDS)

 

 

 

 

 

 

 

 

 

Cch(mutual)

mutual channel capacitance

between signal pin and pin n.c.;

[1]

-

0.07

-

pF

 

 

 

 

f = 1 MHz; Vbias = 2.5 V

 

 

 

 

 

 

Rdyn

dynamic resistance

I = 1 A, Tamb = 25 °C; IEC 61000-4-5/9

 

 

 

 

 

 

 

 

positive transient

 

 

-

2.4

-

Ω

 

 

 

 

 

 

 

 

 

 

 

negative transient

 

 

-

1.3

-

Ω

 

 

 

 

 

 

 

 

VCL(ch)trt(pos) positive transient channel clamping

Vesd = 8 kV HBM; Tamb = 25 °C

 

 

-

8

-

V

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

[1]This parameter is guaranteed by design.

IP4281CZ10_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 25 September 2008

3 of 8

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