Philips 74HC1G32, 74HCT1G32 Technical data

INTEGRATED CIRCUITS

DATA SHEET

74HC1G32; 74HCT1G32

2-input OR gate

Product specification			2002 May 15
Supersedes data of 2001 Apr 06

Philips Semiconductors	Product specification
2-input OR gate	74HC1G32; 74HCT1G32

FEATURES

∙Wide operating voltage from 2.0 to 6.0 V

∙Symmetrical output impedance

∙High noise immunity

∙Low power dissipation

∙Balanced propagation delays

∙Very small 5 pins package

∙Output capability: standard.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

DESCRIPTION

The 74HC1G/HCT1G32 is a highspeed Si-gate CMOS device.

The 74HC1G/HCT1G32 provides the 2-input OR function. The standard output currents are 1/2 compared to the 74HC/HCT32.

	SYMBOL	PARAMETER	CONDITIONS	TYPICAL		UNIT
				HC1G	HCT1G
	tPHL/tPLH	propagation delay A and B to Y	CL = 15 pF; VCC = 5 V	8	10	ns
	CI	input capacitance		1.5	1.5	pF
	CPD	power dissipation capacitance	notes 1 and 2	19	20	pF

Notes

1.CPD is used to determine the dynamic power dissipation (PD in μW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:

fi = input frequency in MHz; fo = output frequency in MHz;

CL = output load capacitance in pF; VCC = supply voltage in Volts.

2.For HC1G the conditions is VI = GND to VCC.

For HCT1G the conditions is VI = GND to VCC − 1.5 V.

FUNCTION TABLE

See note 1.

INPUTS			OUTPUT
A		B	Y
L		L	L
L		H	H
H		L	H
H		H	H

Note

1. H = HIGH voltage level; L = LOW voltage level.

2002 May 15

2

Philips Semiconductors								Product specification
2-input OR gate						74HC1G32; 74HCT1G32
ORDERING INFORMATION
				PACKAGES
TYPE NUMBER
	TEMPERATURE	PINS		PACKAGE		MATERIAL		CODE	MARKING
	RANGE
74HC1G32GW	−40 to +125 °C	5		SC88A		plastic		SOT353	HG
74HCT1G32GW	−40 to +125 °C	5		SC88A		plastic		SOT353	TG
74HC1G32GV	−40 to +125 °C	5		SC-74A		plastic		SOT753	H32
74HCT1G32GV	−40 to +125 °C	5		SC-74A		plastic		SOT753	T32
PIN DESCRIPTION
PIN	SYMBOL				DESCRIPTION
1	B	data input B
2	A	data input A
3	GND	ground (0 V)
4	Y	data output Y
5	VCC	supply voltage

handbook, halfpage		B							VCC
				1			5
						32
		A		2
									Y
	GND			3			4
						MNA163
	Fig.1				Pin configuration.
handbook, halfpage		1
					³1				4
	2
						MNA165
	Fig.3				IEC logic symbol.

handbook, halfpage	1	B			4
				Y
	2	A
				MNA164

Fig.2 Logic symbol.

handbook, halfpage

B

Y

A

MNA166

Fig.4 Logic diagram.

2002 May 15

3

Philips Semiconductors

Product specification

2-input OR gate

74HC1G32; 74HCT1G32

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

CONDITIONS

74HC1G

74HCT1G

UNIT

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

VCC

supply voltage

2.0

5.0

6.0

4.5

5.0

5.5

V

VI

input voltage

0

−

VCC

0

−

VCC

V

VO

output voltage

0

−

VCC

0

−

VCC

V

Tamb

operating ambient

see DC and AC

−40

+25

+125

−40

+25

+125

°C

temperature

characteristics per

device

tr, tf

input rise and fall

VCC = 2.0 V

−

−

1000

−

−

−

ns

times

VCC = 4.5 V

−

−

500

−

−

500

ns

VCC = 6.0 V

−

−

400

−

−

−

ns

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V); notes 1 and 2.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCC	supply voltage		−0.5	+7.0	V
IIK	input diode current	VI < −0.5 V or VI > VCC + 0.5 V	−	±20	mA
IOK	output diode current	VO < −0.5 V or VO > VCC + 0.5 V	−	±20	mA
IO	output source or sink current	−0.5 V < VO < VCC + 0.5 V	−	±12.5	mA
ICC	VCC or GND current		−	±25	mA
Tstg	storage temperature		−65	+150	°C
PD	power dissipation per package	for temperature range from −40 to +125 °C;	−	200	mW
		note 3

Notes

1.Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under ‘recommended operating conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.

2.The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

3.Above 55 °C the value of PD derates linearly with 2.5 mW/K.

2002 May 15

4

Philips Semiconductors	Product specification
2-input OR gate	74HC1G32; 74HCT1G32

DC CHARACTERISTICS

Family 74HC1G

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

TEST CONDITIONS

Tamb (°C)

SYMBOL

PARAMETER

OTHER

VCC

−40 to +85

−40 to +125

UNIT

(V)

MIN.

TYP.(1)

MAX.

MIN.

MAX.

VIH

HIGH-level input voltage

2.0

1.5

1.2

−

1.5

−

V

4.5

3.15

2.4

−

3.15

−

V

6.0

4.2

3.2

−

4.2

−

V

VIL

LOW-level input voltage

2.0

−

0.8

0.5

−

0.5

V

4.5

−

2.1

1.35

−

1.35

V

6.0

−

2.8

1.8

−

1.8

V

VOH

HIGH-level output

VI = VIH or VIL;

2.0

1.9

2.0

−

1.9

−

V

voltage

IO = −20 μA

VI = VIH or VIL;

4.5

4.4

4.5

−

4.4

−

V

IO = −20 μA

VI = VIH or VIL;

6.0

5.9

6.0

−

5.9

−

V

IO = −20 μA

VI = VIH or VIL;

4.5

4.13

4.32

−

3.7

−

V

IO = −2.0 mA

VI = VIH or VIL;

6.0

5.63

5.81

−

5.2

−

V

IO = −2.6 mA

VOL

LOW-level output voltage

VI = VIH or VIL;

2.0

−

0

0.1

−

0.1

V

IO = 20 μA

VI = VIH or VIL;

4.5

−

0

0.1

−

0.1

V

IO = 20 μA

VI = VIH or VIL;

6.0

−

0

0.1

−

0.1

V

IO = 20 μA

VI = VIH or VIL;

4.5

−

0.15

0.33

−

0.4

V

IO = 2.0 mA

VI = VIH or VIL;

6.0

−

0.16

0.33

−

0.4

V

IO = 2.6 mA

ILl

input leakage current

VI = VCC or GND

6.0

−

−

1.0

−

1.0

μA

ICC

quiescent supply current

VI = VCC or GND;

6.0

−

−

10

−

20

μA

IO = 0

Note

1. All typical values are measured at Tamb = 25 °C.

2002 May 15

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