PARADIGM PDM41258LA15SOATY, PDM41258LA15SOITR, PDM41258LA15SOITY, PDM41258LA15SOTR, PDM41258LA15SOTY Datasheet

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Rev. 2.2 - 4/27/98 1
1 2 3 4 5 6 7 8
9 10 11 12
Features
n
High speed access times Com’l: 7, 8, 10, 12 and 15 ns Ind’l: 8, 10, 12 and 15 ns
n
Low power operation (typical)
- PDM41258SA Active: 400 mW Standby: 150 mW
- PDM41258LA Active: 350 mW Standby: 25 mW
n
Single +5V (
±
10%) power supply
n
TTL compatible inputs and outputs
n
Packages Plastic SOJ (300 mil) - SO
Description
The PDM41258 is a high-performance CMOS static RAM organized as 65,536 x 4 bits. Writing to this device is accomplished when the write enable (WE
)
and the chip enable (CE
) inputs are both LOW.
Reading is accomplished when WE
remains HIGH
and CE
goes LOW.
The PDM41258 operates from a single +5V power supply and all the inputs and outputs are fully TTL­compatible. The PDM41258 comes in two versions, the standard power version PDM41258SA and a low power version the PDM41258LA. The two versions are functionally the same and only differ in their power consumption.
The PDM41258 is available in a 24-pin 300-mil plas­tic SOJ for surface mount applications.
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A
0
    
15
I/O I/O I/O I/O
0
1
2
3
CE
WE
•
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Addresses
Decoder Memory
Matrix
Input Data Control
Column I/O
•••••
Functional Block Diagram
PDM41258
256K Static RAM
64K x 4-Bit
PDM41258
2 Rev. 2.2 - 4/27/98
Absolute Maximum Ratings
(1)
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maxi­mum rating conditions for extended periods may affect reliability
.2. Appropriate thermal calculations should be performed in all cases and specifically for
those where the chosen package has a large thermal resistance (e.g., TSOP). The calculation should be of the form
: T
j
= T
a
+ P * θ
ja
, where T
a
is the ambient tempera-
ture, P is average oper ating po w er and θ
ja
the thermal resistance of the package. For
this product, use the following θ
ja
value:
SOJ: 83
o
C/W
Symbol Rating Com’l. Ind. Unit
T
TERM
Terminal Voltage with Respect to V
SS
–0.5 to +7.0 –0.5 to +7.0
°
C
T
BIAS
Temperature Under Bias –55 to +125 –65 to +135
°
C
T
STG
Storage Temperature –55 to +125 –65 to +150
°
C
P
T
Power Dissipation 1.0 1.0 W
I
OUT
DC Output Current 50 50 mA
T
j
Maximum Junction Temperature
(2)
125 145
°
C
1 2 3 4 5 6 7 8 9 10 11 12 13
14
15
16
17
18
19
20
21
22
23
24
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
CE
Vss
Vcc A15 A14 A13 A12 A11 A10 I/O3 I/O2 I/O1 I/O0
WE
Pin Configuration
SOJ
Pin Description
Name Description
A15-A0 Address Inputs I/O3-I/O0 Data Inputs and Outputs WE
Write Enable Input
CE
Chip Enable Input
V
CC
Power (+5V)
V
SS
Ground
T ruth T able
NOTE:1.H = V
IH
, L = V
IL
, X = DON’T CARE
WE CE I/O MODE
X H Hi-Z Standby
HLD
OUT
Read
LLD
IN
Write
PDM41258
Rev. 2.2 - 4/27/98 3
1 2 3 4 5 6 7 8
9 10 11 12
Recommended DC Operating Conditions
DC Electrical Characteristics
(1)
(V
CC
= 5.0V ± 10%)
NOTE: 1. V
IL
(min) = –3.0V for pulse width less than 20 ns.
Power Supply Characteristics
SHADED AREA = PRELIMINARY DATA NOTE:All values are maximum guaranteed values.
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5 V
V
SS
Supply Voltage 0 0 0 V
Commercial Ambient Temperature 0 25 70
°
C
Industrial Ambient T emperature –40 25 85
° C
PDM41258SA PDM41258LA
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
I
LI
Input Leakage Current V
CC
= MAX., V
IN
= V
SS
to V
CC
Com’l/ Ind.
55–55
µ
A
I
LO
Output Leakage Current V
CC
= MAX.,
CE
= V
IH
, V
OUT
= V
SS
to V
CC
Com’l/ Ind.
55–55
µ
A
V
IL
Input Low Voltage –0.5
(1)
0.8 –0.5
(1)
0.8 V
V
IH
Input High Voltage 2.2 6.0 2.2 6.0 V
V
OL
Output Low Voltage I
OL
= 8 mA, V
CC
= Min.
I
OL
= 10 mA, V
CC
= Min.
— —
0.4
0.5
— —
0.4
0.5
V V
V
OH
Output High Voltage I
OH
= –4 mA, V
CC
= Min. 2.4 2.4 V
-7 -8 -10 -12 -15
Symbol Parameter Power
Com’l. Com’l. Ind. Com’l. Ind. Com’l. Ind. Com’l. Ind. Units
I
CC
Operating Current CE
= V
IL
SA 210 200 210 190 200 180 190 170 180 mA
f = f
MAX
= 1/t
RC
V
CC
= Max
I
OUT
= 0 mA
LA
190 180 190 170 180 160 170 150 160 mA
I
SB
Standby Current CE
= V
IH
SA
90 80 80 70 70 60 60 50 50 mA
f = f
MAX
= 1/t
RC
V
CC
= Max
LA
90 80 80 70 70 60 60 50 50 mA
I
SB1
Full Standby Current CE
V
CC
– 0.2V
SA
20 20 20 20 20 20 20 20 20 mA
f = 0 V
CC
= Max
V
IN
V
CC
– 0.2V or 0.2V
LA
5 55555555mA
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