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UNR5214
Datasheet
17 pgs240.64 Kb0

Panasonic UNR5216, UNR5215, UNR5214, UNR5213, UNR5212 Datasheet

...
Transistors with built-in Resistor
B
C
R1
R2
E
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/ 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
S-Mini type package, allowing automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
UN5211 8A 10kΩ 10kΩ
UN5212 8B 22kΩ 22kΩ
UN5213 8C 47kΩ 47kΩ
UN5214 8D 10kΩ 47kΩ
UN5215 8E 10kΩ —
UN5216 8F 4.7kΩ —
UN5217 8H 22kΩ —
UN5218 8I 0.51kΩ 5.1kΩ
UN5219 8K 1kΩ 10kΩ
UN5210 8L 47kΩ —
UN521D 8M 47kΩ 10kΩ
UN521E 8N 47kΩ 22kΩ
UN521F 8O 4.7kΩ 10kΩ
UN521K 8P 10kΩ 4.7kΩ
UN521L 8Q 4.7kΩ 4.7kΩ
UN521M EL 2.2kΩ 47kΩ
UN521N EX 4.7kΩ 47kΩ
UN521T EZ 22kΩ 47kΩ
UN521V FD 2.2kΩ 2.2kΩ
UN521Z FF 4.7kΩ 22kΩ
)
2
2.1±0.1
1.25±0.1 0.4250.425
1
1.3±0.10.9±0.1
2.0±0.2
0.650.2 0.65
2
0.7±0.1
0.2±0.1
0 to 0.1
1 : Base 2 : Emitter EIAJ : SC–70 3 : Collector S–Mini Type Package
Internal Connection
3
Unit: mm
-0
+0.1
0.3
-0.05
+0.1
0.15
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
50 V
50 V 100 mA 150 mW 150 ˚C
–55 to +150 ˚C
1
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN5211 0.5 UN5212/5214/521E/521D/521M/521N/521T
UN5213 0.1 Emitter cutoff current
UN5215/5216/5217/5210
UN521F/521K 1.0
UN5219 1.5
UN5218/521L/521V 2.0
UN521Z 0.4
Collector to base voltage V Collector to emitter voltage V
UN5211 35
UN5212/521E 60
UN5213/5214/521M 80 Forward
current transfer ratio
UN5215*/5216*/5217*/5210*
UN521F/521D/5219 h
UN5218/521K/521L 20
UN521N/521T 80 400
UN521V 6 20
UN521Z 60 200
Collector to emitter saturation voltage V
UN521V IC = 10mA, IB = 1.5mA 0.25 V Output voltage high level V Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2
UN5213/521K
UN521D VCC = 5V, VB = 10V, RL = 1kΩ 0.2
UN521E VCC = 5V, VB = 6V, RL = 1kΩ 0.2 Transition frequency f
UN5211/5214/5215/521K 10 UN5212/5217/521T 22
Input resis­tance
UN5213/521D/521E/5210 47 UN5216/521F/521L/521N/521Z UN5218 0.51 UN5219 1 UN521M/521V 2.2
CBO
I
CEO
I
EBO
CBO
CEO
FE
CE(sat)IC
OH
V
OL
T
R
1
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V
160 460
VCE = 10V, IC = 5mA 30
= 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VOC = 5V, VB = 3.5V, RL = 1kΩ 0.2
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
(–30%) 4.7 (+30%) kΩ
0.2
0.01 mA
V
* hFE rank classification (UN5125/5216/5217/5210)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN5211/5212/5213/521L 0.8 1.0 1.2 UN5214 0.17 0.21 0.25 UN5218/5219 0.08 0.1 0.12 UN521D 4.7
Resis­tance ratio
UN521E 2.14 UN521F/521T R1/R UN521K 2.13 UN521M 0.047 UN521N 0.1 UN521V 1.0 UN521Z 0.21
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
2
0.47
3
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
240
)
200
mW
(
T
160
120
80
40
Total power dissipation P
0
0 16040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN5211
)
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
IB=1.0mA
0.9mA
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
–25˚C
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
— I
25˚C
IN
C
IC/IB=10
Ta=75˚C
VO=5V Ta=25˚C
hFE — I
C
400
FE
300
200
100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
13
)
100
30
)
10
V
(
IN
3
1
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
4
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
Transistors with built-in Resistor
Characteristics charts of UN5212
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
— V
I
C
160
140
IB=1.0mA
)
0.9mA
120
mA
(
C
100
Collector current I
0.8mA
80
60
40
20
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
)
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
13
)
IN
VO=5V Ta=25˚C
100
30
)
10
V
(
IN
3
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN5213
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
IB=1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
0.03
Collector to emitter saturation voltage V
0.01
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
C
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
13
10 30 100 300 1000
VCE=10V
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
5
Transistors with built-in Resistor
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Cob — V
6
)
pF
(
5
ob
4
3
2
1
CB
f=1MHz
=0
I
E
Ta=25˚C
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN5214
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
Collector to emitter voltage VCE (V
IB=1.0mA
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IO — V
IN
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
Collector to emitter saturation voltage V
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3
–25˚C
1 3 10 30 100
Collector current IC (mA
25˚C
— I
C
VO=5V Ta=25˚C
)
IC/IB=10
Ta=75˚C
1.41.21.00.80.6
)
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
13
VIN — I
O
VO=0.2V Ta=25˚C
1 3 10 30 100
Output current IO (mA
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
)
)
Cob — V
6
)
pF
(
5
ob
4
3
2
1
CB
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
VO=5V Ta=25˚C
)
1.41.21.00.80.6
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
VIN — I
O
VO=0.2V Ta=25˚C
1 3 10 30 100
Output current IO (mA
)
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