Panasonic UNR4224, UNR4223, UNR4222, UNR4221 Datasheet
Transistors with built-in Resistor
B
C
R1
R2
E
UN4221/4222/4223/4224
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
New S type package, allowing supply with the radial taping.
Resistance by Part Number
■
(R1)(R
●
UN4221 2.2kΩ 2.2kΩ
●
UN4222 4.7kΩ 4.7kΩ
●
UN4223 10kΩ 10kΩ
●
UN4224 2.2kΩ 10kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
50 V
50 V
500 mA
300 mW
150 ˚C
–55 to +150 ˚C
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
–
0.7±0.1
0.45
2.0±0.2
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Unit: mm
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
Emitter
cutoff
current
UN4221 5
UN4222 I
UN4223/4224 1
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
UN4221 40
UN4222 h
UN4223/4224 60
Collector to emitter saturation voltage V
Output voltage high level V
Output voltage low level V
Input
resistance
UN4221/4224 2.2
UN4222 R
UN4223 10
Resistance ratio
UN4224 0.17 0.22 0.27
CBO
I
CEO
EBO
CBO
CEO
FE
CE(sat)IC
OH
OL
1
R1/R
VCB = 50V, IE = 0 1 µA
VCE = 50V, IB = 0 1 µA
VEB = 6V, IC = 0 2 mA
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCE = 10V, IC = 100mA 50
= 100mA, IB = 5mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 500Ω 4.9 V
VCC = 5V, VB = 3.5V, RL = 500Ω 0.2 V
(–30%) 4.7 (+30%) kΩ
0.8 1.0 1.2
2
1
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
400
)
350
mW
(
300
T
250
200
150
100
50
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN4221
)
UN4221/4222/4223/4224
— V
I
C
300
IB=1.0mA
250
)
mA
(
200
C
150
100
Collector current I
50
0
012210486
Collector to emitter voltage VCE (V
Cob — V
24
)
pF
(
20
ob
16
12
CE
CB
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
)
–25˚C
0.01
13
10 30 100 300 1000
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
13
)
IN
VO=5V
Ta=25˚C
100
30
)
10
V
(
IN
3
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
8
4
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
2
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
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