Panasonic UNR421L, UNR421K, UNR421F, UNR421E, UNR421D Datasheet

...
Transistors with built-in Resistor
B
C
R1
R2
E
UN4211/4212/4213/4214/4215/4216/4217/4218/ 4219/4210/421D/421E/421F/421K/421L
Silicon NPN epitaxial planer transistor
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
New S type package, allowing supply with the radial taping.
Resistance by Part Number
(R1)(R
UN4211 10k 10k
UN4212 22k 22k
UN4213 47k 47k
UN4214 10k 47k
UN4215 10k
UN4216 4.7k
UN4217 22k
UN4218 0.51k 5.1k
UN4219 1k 10k
UN4210 47k
UN421D 47k 10k
UN421E 47k 22k
UN421F 4.7k 10k
UN421K 10k 4.7k
UN421L 4.7k 4.7k
)
2
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
0.7±0.1
0.45
2.0±0.2
2.54±0.15
1 : Emitter 2 : Collector 3 : Base New S Type Package
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
50 V
50 V 100 mA 300 mW 150 ˚C
–55 to +150 ˚C
1
UN4211/4212/4213/4214/4215/4216/4217/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN4211 0.5 UN4212/4214/421E/421D 0.2
UN4213 0.1 Emitter cutoff current
UN4215/4216/4217/4210 I
UN421F/421K 1.0
UN4219 1.5
UN4218/421L 2.0
Collector to base voltage V Collector to emitter voltage V
UN4211 35
Forward current transfer ratio
UN4212/421E 60
UN4213/4214
UN4215*/4216*/4217*/4210*
UN421F/421D/4219 30
UN4218/421K/421L 20
Collector to emitter saturation voltage V Output voltage high level V Output voltage low level VCC = 5V, VB = 2.5V, RL = 1k 0.2
UN4213/421K UN421D VCC = 5V, VB = 10V, RL = 1k 0.2 UN421E VCC = 5V, VB = 6V, RL = 1k 0.2
Transition frequency f
UN4211/4214/4215/421K 10
UN4212/4217 22 Input
resis­tance
UN4213/421D/421E/4210
UN4216/421F/421L 4.7
UN4218 0.51
UN4219 1
UN4211/4212/4213/421L 0.8 1.0 1.2
UN4214 0.17 0.21 0.25
Resis­tance ratio
UN4218/4219 0.08 0.1 0.12
UN421D R1/R
UN421E 1.7 2.14 2.6
UN421F 0.37 0.47 0.57
UN421K 1.7 2.13 2.6
CBO
I
CEO
EBO
CBO
CEO
h
FE
CE(sat)IC
OH
V
OL
T
R
1
2
4218/4219/4210/421D/421E/421F/421K/421L
VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.01 mA
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V
VCE = 10V, IC = 5mA
= 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1k 4.9 V
VCC = 5V, VB = 3.5V, RL = 1k 0.2
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
80
160 460
(–30%)
47
3.7 4.7 5.7
V
(+30%) k
* hFE rank classification (UN4215/4216/4217/4210)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
400
)
350
mW
(
300
T
250
200
150
100
50
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN4211
)
UN4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
IB=1.0mA
0.9mA
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
–25˚C
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
— I
25˚C
IN
C
IC/IB=10
Ta=75˚C
VO=5V Ta=25˚C
hFE — I
C
400
FE
300
200
100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
13
)
100
30
)
10
V
(
IN
3
1
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
3
Transistors with built-in Resistor
Characteristics charts of UN4212
UN4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
— V
I
C
160
140
IB=1.0mA
)
0.9mA
120
mA
(
C
100
Collector current I
0.8mA
80
60
40
20
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
)
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
13
)
IN
VO=5V Ta=25˚C
100
30
)
10
V
(
IN
3
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN4213
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
IB=1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
0.03
Collector to emitter saturation voltage V
0.01
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
C
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
13
10 30 100 300 1000
VCE=10V
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
4
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