Panasonic UNR4121, UNR4122, UNR4123, UNR4124, UNR412X Technical data
...
Transistors with built-in Resistor
B
C
R1
R2
E
UNR4121/4122/4123/4124/412X/412Y
(UN4121/4122/4123/4124/412X/412Y)
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
New S type package, allowing supply with the radial taping.
Resistance by Part Number
■
(R1)(R
●
UNR4121 2.2kΩ 2.2kΩ
●
UNR4122 4.7kΩ 4.7kΩ
●
UNR4123 10kΩ 10kΩ
●
UNR4124 2.2kΩ 10kΩ
●
UNR412X 0.27kΩ 5.0kΩ
●
UNR412Y 3.1kΩ 4.6kΩ
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
)
2
–50 V
–50 V
–500 mA
300 mW
150 ˚C
–55 to +150 ˚C
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
–
0.7±0.1
2.0±0.2
0.45
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Unit: mm
Note.) The Part numbers in the Parenthesis show conventional part number.
1
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
UNR4121/4122/4123/4124/412X/412Y
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
UNR412X
Collector cutoff current I
UNR412X
Emitter
cutoff
current
UNR4121 –5
UNR4122/412X/412Y I
UNR4123/4124 –1
Collector to base voltage V
Collector to emitter voltage V
Forward
current
transfer
ratio
UNR4121 40
UNR4122/412Y
UNR4123/4124 60
UNR412X 20
Collector to emitter saturation voltage V
UNR412X
UNR412Y
Output voltage high level V
Output voltage low level V
Transition frequency f
CBO
I
CBO
CEO
I
CEO
EBO
CBO
CEO
h
FE
CE(sat)IC
V
CE(sat)IC
V
CE(sat)IC
OH
OL
T
VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5
VEB = –6V, IC = 0 –2 mA
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCE = –10V, IC = –100mA
50
= –100mA, IB = –5mA – 0.25
= –10mA, IB = – 0.3mA – 0.25 V
= –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
80 MHz
UNR4121/4124 2.2
Input
resistance
UNR4122 4.7
UNR4123 R
1
(–30%) 10 (+30%) kΩ
UNR412X 0.27
UNR412Y 3.1
Resistance ratio 0.8 1.0 1.2
UNR4124
UNR412X 0.043 0.054 0.065
R1/R
2
0.17 0.22 0.27
UNR412Y 0.67
µA
µA
Common characteristics chart
PT — Ta
400
)
mW
(
300
T
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
2
)
Transistors with built-in Resistor
Characteristics charts of UNR4121
UNR4121/4122/4123/4124/412X/412Y
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
Cob — V
12
)
pF
(
10
ob
8
6
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
CB
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=– 5V
Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=– 0.2V
Ta=25˚C
)
4
2
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR4122
— V
I
C
–300
–250
)
mA
(
–200
C
–150
–100
Collector current I
–50
0
0 –12–2 –10–4 – 8–6
Collector to emitter voltage VCE (V
CE
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
)
–30
–10
Output current I
–3
–1
–0.4
)
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–100
–30
–10
–3
–1
–0.3
–0.1
–1 –3
V
— I
CE(sat)
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
160
VCE=–10V
FE
120
80
40
C
Ta=75˚C
25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
–25˚C
)
3
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