Panasonic UNR411H, UNR411E, UNR411F, UNR411D, UNR4119 Datasheet

...
Transistors with built-in Resistor
B
C
R1
R2
E
UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L
Silicon PNP epitaxial planer transistor
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
New S type package, allowing supply with the radial taping.
Resistance by Part Number
(R1)(R
UN4111 10k 10k
UN4112 22k 22k
UN4113 47k 47k
UN4114 10k 47k
UN4115 10k
UN4116 4.7k
UN4117 22k
UN4118 0.51k 5.1k
UN4119 1k 10k
UN4110 47k
UN411D 47k 10k
UN411E 47k 22k
UN411F 4.7k 10k
UN411H 2.2k 10k
UN411L 4.7k 4.7k
)
2
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
0.7±0.1
0.45
2.0±0.2
2.54±0.15
1 : Emitter 2 : Collector 3 : Base New S Type Package
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
–50 V –50 V
–100 mA
300 mW 150 ˚C
–55 to +150 ˚C
1
UN4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
I
CBO
CEO
UN4111 – 0.5 UN4112/4114/411E/411D – 0.2
Emitter cutoff current
UN4113 – 0.1 UN4115/4116/4117/4110 I
EBO
UN411F/411H –1.0 UN4119 –1.5
UN4118/411L –2.0 Collector to base voltage V Collector to emitter voltage V
CBO
CEO
UN4111 35
Forward current transfer ratio
UN4112/411E 60
UN4113/4114
UN4115*/4116*/4117*/4110*
h
FE
UN411F/411D/4119/411H 30
UN4118/411L 20 Collector to emitter saturation voltage V Output voltage high level V
CE(sat)IC
OH
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1k – 0.2
UN4113 UN411D VCC = –5V, VB = –10V, RL = 1k – 0.2
V
OL
UN411E VCC = 5V, VB = –6V, RL = 1k – 0.2
Transition frequency f
T
UN4111/4114/4115 10
UN4112/4117 22
UN4113/4110/411D/411E 47
Input resis­tance
UN4116/411F/411L R
1
UN4118 0.51
UN4119 1
UN411H 2.2
UN4111/4112/4113/411L 0.8 1.0 1.2
UN4114 0.17 0.21 0.25
UN4118/4119 0.08 0.1 0.12
Resis­tance ratio
UN411D R1/R
UN411E 1.7 2.14 2.6
UN411F 0.37 0.47 0.57
UN411H 0.17 0.22 0.27
VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.01 mA
IC = –10µA, IE = 0 –50 V IC = –2mA, IB = 0 –50 V
VCE = –10V, IC = –5mA
= –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1k –4.9 V
VCC = –5V, VB = –3.5V, RL = 1k – 0.2
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
2
4119/4110/411D/411E/411F/411H/411L
80
160 460
(–30%) 4.7 (+30%) k
3.7 4.7 5.7
V
* hFE rank classification (UN4115/4116/4117/4110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
400
) mW
(
300
T
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
Characteristics charts of UN4111
)
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
CB
–0.9mA
f=1MHz I
E
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
Ta=75˚C
25˚C
–25˚C
)
VO=–0.2V Ta=25˚C
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–30
–10
Output current I
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
3
Transistors with built-in Resistor
Characteristics charts of UN4112
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
–0.9mA
CB
–0.8mA
f=1MHz I
E
Ta=25˚C
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
) V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN4113
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
4
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