Panasonic UNR4111, UNR4112, UNR4113, UNR4114, UNR4115 Technical data

...
Transistors with built-in Resistor
B
C
R1
R2
E
UNR4111/4112/4113/4114/4115/4116/4117/ 4118/4119/4110/411D/411E/411F/411H/411L
(UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L)
Silicon PNP epitaxial planer transistor
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
New S type package, allowing supply with the radial taping.
Resistance by Part Number
(R1)(R
UNR411 1 10k 10kΩ
UNR4112 22k 22kΩ
UNR4113 47k 47kΩ
UNR4114 10k 47kΩ
UNR4115 10k
UNR4116 4.7k
UNR4117 22k
UNR4118 0.51k 5.1k
UNR4119 1k 10kΩ
UNR4110 47k
UNR411D 47k 10kΩ
UNR411E 47k 22kΩ
UNR411F 4.7k 10kΩ
UNR411H 2.2k 10kΩ
UNR411L 4.7k 4.7k
)
2
4.0±0.2
marking
123
1.271.27
Internal Connection
3.0±0.215.6±0.5
0.1
+0.2
0.7±0.1
0.45
2.0±0.2
2.54±0.15
1 : Emitter 2 : Collector 3 : Base New S Type Package
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
–50 V –50 V
–100 mA
300 mW 150 ˚C
–55 to +150 ˚C
Note)The part numbers in the parenthesis show conventional part number.
1
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
I
CBO
CEO
UNR411 1 – 0.5 UNR4112/4114/411E/411D – 0.2
Emitter cutoff current
UNR4113 – 0.1 UNR4115/4116/4117/4110 I
EBO
UNR411F/411H –1.0 UNR4119 –1.5
UNR4118/411L –2.0 Collector to base voltage V Collector to emitter voltage V
CBO
CEO
UNR411 1 35
UNR4112/411E 60
Forward current transfer ratio
UNR4113/4114
UNR4115*/41 16*/4117*/4110*
h
FE
UNR411F/411D/4119/411H 30
UNR4118/411L 20 Collector to emitter saturation voltage V Output voltage high level V
CE(sat)IC
OH
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1k – 0.2
UNR4113 UNR411D VCC = –5V, VB = –10V, RL = 1k – 0.2
V
OL
UNR411E VCC = 5V, VB = –6V, RL = 1k – 0.2
Transition frequency f
T
UNR4111/4114/4115 10
UNR4112/4117 22
UNR4113/4110/411D/411E 47
Input resis­tance
UNR4116/411F/411L R
1
UNR4118 0.51
UNR4119 1
UNR411H 2.2
UNR4111/4112/4113/411L 0.8 1.0 1.2
UNR4114 0.17 0.21 0.25
UNR4118/4119 0.08 0.1 0.12
Resis­tance ratio
UNR411D R1/R
UNR411E 1.7 2.14 2.6
UNR411F 0.37 0.47 0.57
UNR411H 0.17 0.22 0.27
VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 0.01 mA
IC = –10µA, IE = 0 –50 V IC = –2mA, IB = 0 –50 V
VCE = –10V, IC = –5mA
= –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1k –4.9 V
VCC = –5V, VB = –3.5V, RL = 1k – 0.2
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
2
4119/4110/411D/411E/411F/411H/411L
80
160 460
(–30%) 4.7 (+30%) k
3.7 4.7 5.7
V
* hFE rank classification (UNR4115/4116/4117/4110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
400
) mW
(
300
T
200
100
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
Characteristics charts of UNR4111
)
4119/4110/411D/411E/411F/411H/411L
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
CB
–0.9mA
f=1MHz I
E
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
Ta=75˚C
25˚C
–25˚C
)
VO=–0.2V Ta=25˚C
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–30
–10
Output current I
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
3
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor
Characteristics charts of UNR4112
4119/4110/411D/411E/411F/411H/411L
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
IB=–1.0mA
–0.9mA
CB
–0.8mA
f=1MHz I
E
Ta=25˚C
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR4113
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
)
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.1 –0.3
V
— I
CE(sat)
25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
4
UNR4111/4112/4113/4114/4115/4116/4117/4118/
Transistors with built-in Resistor
4119/4110/411D/411E/411F/411H/411L
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UNR4114
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
IB=–1.0mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA –0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
)
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
Input voltage VIN (V
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.1 –0.3
V
CE(sat)
25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
) pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–1000
–300
)
–100
V
(
IN
–30
–10
–3
Input voltage V
–1
–0.3
–0.1
–0.1 –0.3
VIN — I
O
VO=–0.2V Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
5
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