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UNR221D
Datasheet
17 pgs240.87 Kb0

Panasonic UNR2212, UNR2211, UNR2210, UNR221F, UNR221E Datasheet

...
Transistors with built-in Resistor
2.8
+0.2 –0.3
1.5
+0.25 –0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2 0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
B
C
R1
R2
E
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
UN2211 8A 10kΩ 10kΩ
UN2212 8B 22kΩ 22kΩ
UN2213 8C 47kΩ 47kΩ
UN2214 8D 10kΩ 47kΩ
UN2215 8E 10kΩ —
UN2216 8F 4.7kΩ —
UN2217 8H 22kΩ —
UN2218 8I 0.51kΩ 5.1kΩ
UN2219 8K 1kΩ 10kΩ
UN2210 8L 47kΩ —
UN221D 8M 47kΩ 10kΩ
UN221E 8N 47kΩ 22kΩ
UN221F 8O 4.7kΩ 10kΩ
UN221K 8P 10kΩ 4.7kΩ
UN221L 8Q 4.7kΩ 4.7kΩ
UN221M EL 2.2kΩ 47kΩ
UN221N EX 4.7kΩ 47kΩ
UN221T EZ 22kΩ 47kΩ
UN221V FD 2.2kΩ 2.2kΩ
UN221Z FF 4.7kΩ 22kΩ
)
2
Unit: mm
1:Base 2:Emitter EIAJ:SC-59 3:Collector Mini T ype Package
Internal Connection
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P Junction temperature T Storage temperature T
CBO
V
CEO
C
T
j
stg
50 V
50 V 100 mA 200 mW 150 ˚C
–55 to +150 ˚C
1
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN2211 0.5 UN2212/2214/221E/221D/221M/221N/221T UN2213 0.1
Emitter cutoff current
UN2215/2216/2217/2210 UN221F/221K 1.0 UN2219 1.5 UN2218/221L/221V 2.0
UN221Z 0.4 Collector to base voltage V Collector to emitter voltage V
UN2211 35
UN2212/221E 60
Forward current transfer ratio
UN2213/2214/221M 80
UN2215*/2216*/2217*/2210*
UN221F/221D/2219 30
UN2218/221K/221L 20
UN221N/221T 80 400 —
UN221V 60 200 Collector to emitter saturation voltage
UN221V IC = 10mA, IB = 1.5mA 0.04 0.25 Output voltage high level V Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2
UN2213/221K
UN221D VCC = 5V, VB = 10V, RL = 1kΩ 0.2
UN221E VCC = 5V, VB = 6V, RL = 1kΩ 0.2 Transition frequency f
UN2211/2214/2215/221K 10 UN2212/2217/221T 22
Input resis­tance
UN2213/221D/221E/2210 47 UN2216/221F/221L/221N/221Z UN2218 0.51 UN2219 1 UN221M/221V 2.2
I
I
h
V
V
R
CBO
CEO
EBO
T
CBO
CEO
FE
CE(sat)
OH
OL
1
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA 0.25
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
160 460
(–30%) 4.7 (+30%) kΩ
0.2
0.01 mA
V
* hFE rank classification (UN2215/2216/2217/2210)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN2211/2212/2213/221L 0.8 1.0 1.2 UN2214 0.17 0.21 0.25 UN2218/2219 0.08 0.1 0.12 UN221D 4.7
Resis­tance ratio
UN221E 2.14 UN221F/221T R1/R UN221K 2.13 UN221M 0.047 UN211N 0.1 UN211V 1.0 UN211Z 0.21
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
2
0.47
3
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of UN2211
)
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
— V
I
C
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
IB=1.0mA
0.9mA
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
3
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
–25˚C
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
— I
25˚C
IN
C
IC/IB=10
Ta=75˚C
VO=5V Ta=25˚C
hFE — I
C
400
FE
300
200
100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
13
)
100
30
)
10
V
(
IN
3
1
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
4
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
Transistors with built-in Resistor
Characteristics charts of UN2212
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
— V
I
C
160
140
IB=1.0mA
)
0.9mA
120
mA
(
C
100
Collector current I
0.8mA
80
60
40
20
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz I
=0
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
)
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
13
)
IN
VO=5V Ta=25˚C
100
30
)
10
V
(
IN
3
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN2213
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
IB=1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
0.03
Collector to emitter saturation voltage V
0.01
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
C
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
13
10 30 100 300 1000
VCE=10V
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
5
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — V
6
)
pF
(
5
ob
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN2214
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
Collector to emitter voltage VCE (V
IB=1.0mA
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IO — V
IN
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
Collector to emitter saturation voltage V
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3
–25˚C
1 3 10 30 100
Collector current IC (mA
25˚C
— I
C
VO=5V Ta=25˚C
)
IC/IB=10
Ta=75˚C
1.41.21.00.80.6
)
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
13
VIN — I
O
VO=0.2V Ta=25˚C
1 3 10 30 100
Output current IO (mA
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
)
)
Cob — V
6
)
pF
(
5
ob
4
3
2
1
CB
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
VO=5V Ta=25˚C
)
1.41.21.00.80.6
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
VIN — I
O
VO=0.2V Ta=25˚C
1 3 10 30 100
Output current IO (mA
)
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