Transistors with built-in Resistor
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
●
UN2211 8A 10kΩ 10kΩ
●
UN2212 8B 22kΩ 22kΩ
●
UN2213 8C 47kΩ 47kΩ
●
UN2214 8D 10kΩ 47kΩ
●
UN2215 8E 10kΩ —
●
UN2216 8F 4.7kΩ —
●
UN2217 8H 22kΩ —
●
UN2218 8I 0.51kΩ 5.1kΩ
●
UN2219 8K 1kΩ 10kΩ
●
UN2210 8L 47kΩ —
●
UN221D 8M 47kΩ 10kΩ
●
UN221E 8N 47kΩ 22kΩ
●
UN221F 8O 4.7kΩ 10kΩ
●
UN221K 8P 10kΩ 4.7kΩ
●
UN221L 8Q 4.7kΩ 4.7kΩ
●
UN221M EL 2.2kΩ 47kΩ
●
UN221N EX 4.7kΩ 47kΩ
●
UN221T EZ 22kΩ 47kΩ
●
UN221V FD 2.2kΩ 2.2kΩ
●
UN221Z FF 4.7kΩ 22kΩ
)
2
Unit: mm
1:Base
2:Emitter EIAJ:SC-59
3:Collector Mini T ype Package
Internal Connection
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
50 V
50 V
100 mA
200 mW
150 ˚C
–55 to +150 ˚C
1
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN2211 0.5
UN2212/2214/221E/221D/221M/221N/221T
UN2213 0.1
Emitter
cutoff
current
UN2215/2216/2217/2210
UN221F/221K 1.0
UN2219 1.5
UN2218/221L/221V 2.0
UN221Z 0.4
Collector to base voltage V
Collector to emitter voltage V
UN2211 35
UN2212/221E 60
Forward
current
transfer
ratio
UN2213/2214/221M 80
UN2215*/2216*/2217*/2210*
UN221F/221D/2219 30
UN2218/221K/221L 20
UN221N/221T 80 400 —
UN221V 60 200
Collector to emitter saturation voltage
UN221V IC = 10mA, IB = 1.5mA 0.04 0.25
Output voltage high level V
Output voltage low level VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2
UN2213/221K
UN221D VCC = 5V, VB = 10V, RL = 1kΩ 0.2
UN221E VCC = 5V, VB = 6V, RL = 1kΩ 0.2
Transition frequency f
UN2211/2214/2215/221K 10
UN2212/2217/221T 22
Input
resistance
UN2213/221D/221E/2210 47
UN2216/221F/221L/221N/221Z
UN2218 0.51
UN2219 1
UN221M/221V 2.2
I
I
h
V
V
R
CBO
CEO
EBO
T
CBO
CEO
FE
CE(sat)
OH
OL
1
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA 0.25
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
160 460
(–30%) 4.7 (+30%) kΩ
0.2
0.01
mA
V
* hFE rank classification (UN2215/2216/2217/2210)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN2211/2212/2213/221L 0.8 1.0 1.2
UN2214 0.17 0.21 0.25
UN2218/2219 0.08 0.1 0.12
UN221D 4.7
Resistance
ratio
UN221E 2.14
UN221F/221T R1/R
UN221K 2.13
UN221M 0.047
UN211N 0.1
UN211V 1.0
UN211Z 0.21
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
2
0.47
3
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of UN2211
)
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
— V
I
C
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
IB=1.0mA
0.9mA
0.8mA
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
=0
I
E
Ta=25˚C
V
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
)
–25˚C
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
— I
25˚C
IN
C
IC/IB=10
Ta=75˚C
VO=5V
Ta=25˚C
hFE — I
C
400
FE
300
200
100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
13
)
100
30
)
10
V
(
IN
3
1
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
4
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
1.41.21.00.80.6
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
Output current IO (mA
1 3 10 30 100
)
Transistors with built-in Resistor
Characteristics charts of UN2212
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
— V
I
C
160
140
IB=1.0mA
)
0.9mA
120
mA
(
C
100
Collector current I
0.8mA
80
60
40
20
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
CB
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
f=1MHz
I
=0
E
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
)
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
IO — V
10000
3000
)
1000
µA
(
O
300
100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
13
)
IN
VO=5V
Ta=25˚C
100
30
)
10
V
(
IN
3
1
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
VIN — I
O
VO=0.2V
Ta=25˚C
)
2
1
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN2213
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
IB=1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
0.03
Collector to emitter saturation voltage V
0.01
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
–25˚C
0.1 0.3
1 3 10 30 100
Collector current IC (mA
25˚C
— I
C
1.41.21.00.80.6
)
IC/IB=10
Ta=75˚C
)
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
1 3 10 30 100
Output current IO (mA
hFE — I
C
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
13
10 30 100 300 1000
VCE=10V
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
5
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Cob — V
6
)
pF
(
5
ob
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
Characteristics charts of UN2214
— V
I
C
CE
160
140
)
120
mA
(
C
100
80
60
40
Collector current I
20
0
012210486
Collector to emitter voltage VCE (V
IB=1.0mA
Ta=25˚C
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
IO — V
IN
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
)
V
(
CE(sat)
Collector to emitter saturation voltage V
)
Input voltage VIN (V
V
CE(sat)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3
–25˚C
1 3 10 30 100
Collector current IC (mA
25˚C
— I
C
VO=5V
Ta=25˚C
)
IC/IB=10
Ta=75˚C
1.41.21.00.80.6
)
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
400
350
FE
300
250
200
150
100
Forward current transfer ratio h
50
0
13
VIN — I
O
VO=0.2V
Ta=25˚C
1 3 10 30 100
Output current IO (mA
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
10 30 100 300 1000
Collector current IC (mA
)
)
Cob — V
6
)
pF
(
5
ob
4
3
2
1
CB
Collector output capacitance C
0
0.1 0.3
1 3 10 30 100
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
10000
3000
)
1000
µA
(
O
300
100
30
10
Output current I
3
1
0.4
)
Input voltage VIN (V
VO=5V
Ta=25˚C
)
1.41.21.00.80.6
100
30
)
10
V
(
IN
3
1
0.3
Input voltage V
0.1
0.03
0.01
0.1 0.3
VIN — I
O
VO=0.2V
Ta=25˚C
1 3 10 30 100
Output current IO (mA
)