Panasonic UNR2110, UNR211Z, UNR211V, UNR211T, UNR211N Datasheet
...
Transistors with built-in Resistor
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
B
C
R1
R2
E
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
Features
■
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
Resistance by Part Number
■
Marking Symbol (R1)(R
●
UN2111 6A 10kΩ 10kΩ
●
UN2112 6B 22kΩ 22kΩ
●
UN2113 6C 47kΩ 47kΩ
●
UN2114 6D 10kΩ 47kΩ
●
UN2115 6E 10kΩ —
●
UN2116 6F 4.7kΩ —
●
UN2117 6H 22kΩ —
●
UN2118 6I 0.51kΩ 5.1kΩ
●
UN2119 6K 1kΩ 10kΩ
●
UN2110 6L 47kΩ —
●
UN211D 6M 47kΩ 10kΩ
●
UN211E 6N 47kΩ 22kΩ
●
UN211F 6O 4.7kΩ 10kΩ
●
UN211H 6P 2.2kΩ 10kΩ
●
UN211L 6Q 4.7kΩ 4.7kΩ
●
UN211M EI 2.2kΩ 47kΩ
●
UN211N EW 4.7kΩ 47kΩ
●
UN211T EY 22kΩ 47kΩ
●
UN211V FC 2.2kΩ 2.2kΩ
●
UN211Z FE 4.7kΩ 22kΩ
)
2
Unit: mm
1:Base
2:Emitter EIAJ:SC-59
3:Collector Mini T ype Package
Internal Connection
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
V
CEO
C
T
j
stg
–50 V
–50 V
–100 mA
200 mW
150 ˚C
–55 to +150 ˚C
1
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN2111 – 0.5
UN2112/2114/211E/211D/211M/211N/211T
UN2113 – 0.1
Emitter
cutoff
current
UN2115/2116/2117/2110 – 0.01
UN211F/211H
UN2119 –1.5
UN2118/211L/211V –2.0
UN211Z – 0.4
Collector to base voltage V
Collector to emitter voltage V
UN2111 35
UN2112/211E 60
UN2113/2114/211M 80
Forward
current
transfer
ratio
UN2115*/2116*/2117*/2110*
UN2119/211F/211D/211H h
UN2118/211L 20
UN211N/211T 80 400
UN211V 6 20
UN211Z 60 200
Collector to emitter saturation voltage
UN211V IC = –10mA, IB = –1.5mA – 0.07 – 0.25 V
Output voltage high level V
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2
UN2113
UN211D VCC = –5V, VB = –10V, RL = 1kΩ – 0.2
UN211E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2
Transition frequency f
UN2111/2114/2115 10
UN2112/2117/211T 22
Input
resistance
UN2113/2110/211D/211E 47
UN2116/211F/211L/211N/211Z
UN2118 0.51
UN2119 1
UN211H/211M/211V 2.2
I
I
V
V
R
CBO
CEO
EBO
T
CBO
CEO
FE
CE(sat)
OH
OL
1
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0
IC = –10mA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
160 460
VCE = –10V, IC = –5mA 30
IC = –10mA, IB = – 0.3mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
(–30%) 4.7 (+30%) kΩ
– 0.2
–1.0
mA
V
* hFE rank classification (UN2115/2116/2117/2110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
UN2111/2112/2113/211L 0.8 1.0 1.2
UN2114 0.17 0.21 0.25
UN2118/2119 0.08 0.1 0.12
UN211D 4.7
Resistance
ratio
UN211E 2.14
UN211F/211T R1/R
UN211H 0.17 0.22 0.27
UN211M 0.047
UN211N 0.1
UN211V 1.0
UN211Z 0.21
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
2
0.47
3
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of UN2111
)
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
IB=–1.0mA
CB
–0.9mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
C
IC/IB=10
Ta=75˚C
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V
Ta=25˚C
hFE — I
C
VCE=–10V
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
Ta=75˚C
25˚C
–25˚C
)
VO=–0.2V
Ta=25˚C
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
4
–30
–10
Output current I
–
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
Transistors with built-in Resistor
Characteristics charts of UN2112
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
3
CE
IB=–1.0mA
–0.9mA
CB
–0.8mA
f=1MHz
I
E
Ta=25˚C
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
— I
CE(sat)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
25˚C
C
IC/IB=10
Ta=75˚C
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
)
IN
)
V
(
IN
–100
–30
–10
–3
–1
VO=–5V
Ta=25˚C
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V
Ta=25˚C
)
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN2113
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
–1.4–1.2–1.0–0.8–0.6
)
C
IC/IB=10
Ta=75˚C
)
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
Ta=75˚C
25˚C
–25˚C
)
5
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
)
pF
(
Cob — V
6
5
ob
4
3
2
1
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN2114
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
IB=–1.0mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.9mA
–0.8mA
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
CE(sat)
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
25˚C
–25˚C
–1 –3 –10 –30 –100
Collector current IC (mA
— I
VO=–5V
Ta=25˚C
C
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
400
FE
300
200
100
Forward current transfer ratio h
0
–1 –3
VIN — I
O
VO=–0.2V
Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
)
pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
IO — V
IN
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
VO=–5V
Ta=25˚C
)
–1.4–1.2–1.0–0.8–0.6
–1000
–300
)
–100
V
(
IN
–30
–10
–3
Input voltage V
–1
–0.3
–0.1
–0.1 –0.3
VIN — I
O
VO=–0.2V
Ta=25˚C
–1 –3 –10 –30 –100
Output current IO (mA
)
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