ON Semiconductor 2N6509, 2N6508, 2N6507, 2N6505, 2N6504 Datasheet
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
• Glass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
MAXIMUM RATINGS (T
Rating
*Peak Repetitive Off–State Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
= 25 to 125°C)
T
J
On-State RMS Current
(180° Conduction Angles; T
Average On-State Current
(180° Conduction Angles; T
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, T
Forward Average Gate Power
(t = 8.3 ms, T
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, T
Operating Junction Temperature Range T
Storage Temperature Range T
*Indicates JEDEC Registered Data
1. V
and V
DRM
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
= 85°C)
C
for all types can be applied on a continuous basis. Ratings
RRM
= 25°C unless otherwise noted)
J
Symbol Value Unit
V
DRM,
V
RRM
2N6504
2N6505
2N6507
2N6508
2N6509
I
C
C
= 85°C)
C
= 85°C)
C
= 85°C)
= 85°C)
= 100°C)
J
T(RMS)
I
T(AV)
I
TSM
P
GM
P
G(AV)
I
GM
J
stg
50
100
400
600
800
25 A
16 A
250 A
20 Watts
0.5 Watts
2.0 A
–40 to
+125
–40 to
+150
Volts
°C
°C
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SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
A
4
TO–220AB
CASE 221A
STYLE 3
1
2
3
x = 4, 5, 7, 8 or 9
YY = Year
WW = Work Week
PIN ASSIGNMENT
1
2
3
4
Cathode
ORDERING INFORMATION
Device Package Shipping
2N6504 TO220AB 500/Box
2N6505 TO220AB
2N6507 TO220AB
2N6508 TO220AB 500/Box
2N6509 TO220AB 500/Box
Anode
Gate
Anode
K
MARKING
DIAGRAM
YY WW
650x
500/Box
500/Box
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 4
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
2N6504/D
2N6504 Series
*THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T
θ
JC
L
1.5 °C/W
260 °C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
C
Characteristic
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
= Rated V
AK
DRM
or V
, Gate Open) TJ = 25°C
RRM
= 125°C
T
J
ON CHARACTERISTICS
*Forward On–State Voltage (Note 2.)
(I
= 50 A)
TM
*Gate Trigger Current (Continuous dc) TC = 25°C
= 12 Vdc, RL = 100 Ohms) TC = –40°C
(V
AK
*Gate Trigger Voltage (Continuous dc)
(V
= 12 Vdc, RL = 100 Ohms, TC = –40°C)
AK
Gate Non-Trigger Voltage
(V
= 12 Vdc, RL = 100 Ohms, TJ = 125°C)
AK
*Holding Current TC = 25°C
(V
= 12 Vdc, Initiating Current = 200 mA,
AK
Gate Open) T
= –40°C
C
*Turn-On Time
(I
= 25 A, IGT = 50 mAdc)
TM
Turn-Off Time (V
(I
= 25 A, IR = 25 A)
TM
= 25 A, IR = 25 A, TJ = 125°C)
(I
TM
= rated voltage)
DRM
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(Gate Open, Rated V
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
, Exponential Waveform)
DRM
Symbol Min Typ Max Unit
I
, I
DRM
RRM
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
t
q
–
–
–
–
10
2.0
– – 1.8 Volts
–
–
9.0
–
75
30
– 1.0 1.5 Volts
0.2 – – Volts
–
–
18
40
–
80
– 1.5 2.0 µs
–
–
15
35
–
–
dv/dt – 50 – V/µs
µA
mA
mA
mA
µs
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2
2N6504 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
13
0
12
0
110
10
0
90
C
T , MAXIMUM CASE TEMPERATURE ( C)°
80
0 4.0 8.0 12 20
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
α = CONDUCTION ANGLE
60°
α = 30°
, ONSTATE FORWARD CURRENT (AMPS)
I
T(AV)
90°
V
TM
on state
I
I
RRM
at V
RRM
H
+ Voltage
I
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Forward Blocking Region
(off state)
DRM
at V
DRM
Anode –
32
α
24
α = CONDUCTION ANGLE
α
90°
60°
180°
dc
α = 30°
16
T
= 125°C
dc180°
16
(AV)
P , AVERAGE POWER (WATTS)
8.0
0
, AVERAGE ONSTATE FORWARD CURRENT (AMPS)
I
T(AV)
J
160 4.0 8.0 12 20
Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation
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