ON Semiconductor 2N6509, 2N6508, 2N6507, 2N6505, 2N6504 Datasheet

2N6504 Series

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half-wave ac control applications, such as

motor controls, heating controls and power supply crowbar circuits.

• Glass Passivated Junctions with Center Gate Fire for Greater

Parameter Uniformity and Stability

• Small, Rugged, Thermowatt Constructed for Low Thermal

Resistance, High Heat Dissipation and Durability

• Blocking Voltage to 800 Volts

• 300 A Surge Current Capability

• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code

MAXIMUM RATINGS (T

Rating

*Peak Repetitive Off–State Voltage (Note 1.)

(Gate Open, Sine Wave 50 to 60 Hz,

= 25 to 125°C)

T

J

On-State RMS Current

(180° Conduction Angles; T

Average On-State Current

(180° Conduction Angles; T

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T

Forward Peak Gate Power

(Pulse Width ≤ 1.0 µs, T

Forward Average Gate Power

(t = 8.3 ms, T

Forward Peak Gate Current

(Pulse Width ≤ 1.0 µs, T

Operating Junction Temperature Range T

Storage Temperature Range T

*Indicates JEDEC Registered Data

1. V

and V

DRM

apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

= 85°C)

C

for all types can be applied on a continuous basis. Ratings

RRM

= 25°C unless otherwise noted)

J

Symbol Value Unit

V

DRM,

V

RRM

2N6504
2N6505
2N6507
2N6508
2N6509

I

C

C

= 85°C)

C

= 85°C)

C

= 85°C)

= 85°C)

= 100°C)

J

T(RMS)

I

T(AV)

I

TSM

P

GM

P

G(AV)

I

GM

J

stg

50
100
400
600
800

25 A

16 A

250 A

20 Watts

0.5 Watts

2.0 A

–40 to

+125

–40 to

+150

Volts

°C

°C

http://onsemi.com

SCRs
25 AMPERES RMS
50 thru 800 VOLTS

G

A

4

TO–220AB

CASE 221A

STYLE 3

1

2

3

x = 4, 5, 7, 8 or 9
YY = Year
WW = Work Week

PIN ASSIGNMENT

1
2
3
4

Cathode

ORDERING INFORMATION

Device Package Shipping

2N6504 TO220AB 500/Box
2N6505 TO220AB
2N6507 TO220AB
2N6508 TO220AB 500/Box
2N6509 TO220AB 500/Box

Anode

Gate

Anode

K

MARKING
DIAGRAM

YY WW

650x

500/Box
500/Box

 Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 4

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

2N6504/D

2N6504 Series

*THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds T

θ

JC
L

1.5 °C/W

260 °C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

C

Characteristic

OFF CHARACTERISTICS

*Peak Repetitive Forward or Reverse Blocking Current

(V

= Rated V

AK

DRM

or V

, Gate Open) TJ = 25°C

RRM

= 125°C

T

J

ON CHARACTERISTICS

*Forward On–State Voltage (Note 2.)

(I

= 50 A)

TM

*Gate Trigger Current (Continuous dc) TC = 25°C

= 12 Vdc, RL = 100 Ohms) TC = –40°C

(V

AK

*Gate Trigger Voltage (Continuous dc)

(V

= 12 Vdc, RL = 100 Ohms, TC = –40°C)

AK

Gate Non-Trigger Voltage

(V

= 12 Vdc, RL = 100 Ohms, TJ = 125°C)

AK

*Holding Current TC = 25°C

(V

= 12 Vdc, Initiating Current = 200 mA,

AK

Gate Open) T

= –40°C

C

*Turn-On Time

(I

= 25 A, IGT = 50 mAdc)

TM

Turn-Off Time (V

(I

= 25 A, IR = 25 A)

TM

= 25 A, IR = 25 A, TJ = 125°C)

(I

TM

= rated voltage)

DRM

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off-State Voltage

(Gate Open, Rated V

*Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

, Exponential Waveform)

DRM

Symbol Min Typ Max Unit

I

, I

DRM

RRM

V

TM

I

GT

V

GT

V

GD

I

H

t

gt

t

q

–
–

–
–

10

2.0

– – 1.8 Volts

–
–

9.0
–

75

30

– 1.0 1.5 Volts

0.2 – – Volts

–

–

18

40

–

80

– 1.5 2.0 µs

–
–

15
35

–
–

dv/dt – 50 – V/µs

µA

mA

mA

mA

µs

http://onsemi.com

2

2N6504 Series

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

13

0

12

0

110

10

0

90

C

T , MAXIMUM CASE TEMPERATURE ( C)°

80

0 4.0 8.0 12 20

Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current

α = CONDUCTION ANGLE

60°

α = 30°

, ONSTATE FORWARD CURRENT (AMPS)

I

T(AV)

90°

V

TM

on state

I

I

RRM

at V

RRM

H

+ Voltage

I

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Forward Blocking Region

(off state)

DRM

at V

DRM

Anode –

32

α

24

α = CONDUCTION ANGLE

α

90°

60°

180°

dc

α = 30°

16

T

= 125°C

dc180°

16

(AV)

P , AVERAGE POWER (WATTS)

8.0

0

, AVERAGE ONSTATE FORWARD CURRENT (AMPS)

I

T(AV)

J

160 4.0 8.0 12 20

Figure 1. Average Current Derating Figure 2. Maximum On–State Power Dissipation

http://onsemi.com

3

100

2N6504 Series

70

50

30

125°C

20

10

7.0

5.0

3.0

2.0

1.0

F

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

0.7

0.5

0.3

0.2

0.1

25°C

300

1 CYCLE

275

250

225

T

= 85°C

C

200

TSM

I , PEAK SURGE CURRENT (AMP)

175

0

0.4
v

, INSTANTANEOUS VOLTAGE (VOLTS)

F

1.2 2.01.6 2.4 2.80.8

1.0

f = 60 Hz

SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT

2.0 3.0 4.0 6.0 8.0 10

NUMBER OF CYCLES

Figure 3. Typical On–State Characteristics Figure 4. Maximum Non–Repetitive Surge Current

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.2 0.3 0.5 1.0 2.0

3.0 5.0

20

30 50 100 200 300 500 2.0 k10 3.0 k 5.0 k 10 k1.0 k

t, TIME (ms)

Figure 5. Thermal Response

http://onsemi.com

4

Z

= R

θ

JC(t)

• r(t)

θ

JC

2N6504 Series

TYPICAL TRIGGER CHARACTERISTICS

100

10

, GATE TRIGGER CURRENT (mA)

GT

I

1

-40 95

, JUNCTION TEMPERATURE (°C)

T

J

Figure 6. Typical Gate Trigger Current

versus Junction T emperature

100

1.0

0.9

0.8

0.7

0.6

0.5

0.4

, GATE TRIGGER VOLTAGE (VOLTS)

GT

0.3

V

0.2

125110806550355-10-25 20

-10-25 20

, JUNCTION TEMPERATURE (°C)

T

J

65

125110958050355-40

Figure 7. Typical Gate Trigger Voltage

versus Junction T emperature

10

H

I , HOLDING CURRENT (mA)

1

T

, JUNCTION TEMPERATURE (°C)

J

12511 0958050355-40 -10-25 20 65

Figure 8. Typical Holding Current

versus Junction T emperature

http://onsemi.com

5

2N6504 Series

PACKAGE DIMENSIONS

TO–220AB

CASE 221A–07

ISSUE AA

SEATING

–T–

PLANE

FB

Q

4

A

123

T

U

C

S

H

K

Z

L

V

R

J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

STYLE 3:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

MILLIMETERSINCHES

http://onsemi.com

6

Notes

2N6504 Series

http://onsemi.com

7

2N6504 Series

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: [phone] or 800–344–3860 Toll Free USA/Canada
Fax: [phone] or 800–344–3867 Toll Free USA/Canada
Email: [e-mail]

Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada

N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support

German Phone: [phone] (Mon–Fri 2:30pm to 7:00pm CET)

Email: ONlit–[e-mail]

French Phone: [phone] (Mon–Fri 2:00pm to 7:00pm CET)

Email: ONlit–[e-mail]

English Phone: [phone] (Mon–Fri 12:00pm to 5:00pm GMT)

Email: [e-mail]

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

*Available from Germany, France, Italy, UK, Ireland

CENTRAL/SOUTH AMERICA:

Spanish Phone: [phone] (Mon–Fri 8:00am to 5:00pm MST)

Email: ONlit–[e-mail]

Toll–Free from Mexico: Dial 01–800–288–2872 for Access –

then Dial 866–297–9322

ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support

Phone: [phone] (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)

Toll Free from Hong Kong & Singapore:
001–800–4422–3781

Email: ONlit–[e-mail]

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: [phone]
Email: [e-mail]

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local
Sales Representative.

http://onsemi.com

8

2N6504/D