ON Semiconductor 2N6497 Datasheet
1
Motorola Bipolar Power Transistor Device Data
. . . designed for high voltage inverters, switching regulators and line–operated
amplifier applications. Especially well suited for switching power supply applications.
• High Collector–Emitter Sustaining Voltage —
V
CEO(sus)
= 250 Vdc (Min) — 2N6497
V
CEO(sus)
= 300 Vdc (Min) — 2N6498
• Excellent DC Current Gain
hFE = 10–75 @ IC = 2.5 Adc
• Low Collector–Emitter Saturation Voltage @ IC = 2.5 Adc —
V
CE(sat)
= 1.0 Vdc (Max) — 2N6497
V
CE(sat)
= 1.25 Vdc (Max) — 2N6498
MAXIMUM RATINGS (1)
Rating
Symbol
2N6497
2N6498
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Voltage
V
CEO
250
300
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Base Voltage
V
CB
350
400
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter–Base Voltage
V
EB
6.0
6.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
— Peak
I
C
5.0
10
5.0
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current
I
B
2.0
2.0
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
P
D
80
0.64
80
0.64
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watts
W/_C
Operating and Storage Junction Temperature Range
TJ,T
stg
–65 to +150
–65 to +150
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Thermal Resistance, Junction to Case
R
θJC
1.56
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
(1) Indicates JEDEC Registered Data.
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6497/D
Motorola, Inc. 1995
*Motorola Preferred Device
5 AMPERE
POWER TRANSISTORS
NPN SILICON
250 & 300 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
REV 7
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 25 mAdc, IB = 0) 2N6497
2N6498
V
CEO(sus)
250
300
—
—
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(VCE = 350 Vdc, V
BE(off)
= 1.5 Vdc) 2N6497
(VCE = 400 Vdc, V
BE(off)
= 1.5 Vdc) 2N6498
(VCE = 175 Vdc, V
BE(off)
= 1.5 Vdc, TC = 100_C) 2N6497
(VCE = 200 Vdc, V
BE(off)
= 1.5 Vdc, TC = 100_C) 2N6498
I
CEX
—
—
—
—
—
—
—
—
1.0
1.0
10
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
I
EBO
—
—
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.5 Adc, VCE = 10 Vdc)
(IC = 5.0 Adc, VCE = 10 Vdc)
h
FE
10
3.0
—
—
75
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
Collector–Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc) 2N6497
2N6498
(IC = 5.0 Adc, IB = 2.0 Adc) All Devices
V
CE(sat)
—
—
—
—
—
—
1.0
1.25
5.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
V
BE(sat)
—
—
—
—
1.5
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
f
T
5.0
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
C
ob
—
—
150
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc)
t
r
—
0.4
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Storage Time
(VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc)
t
s
—
1.4
2.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
Fall Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc)
t
f
—
0.45
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µs
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
Figure 1. Switching Time Test Circuit
1.0
Figure 2. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
0.05 5.0
VCC = 125 V
IC/IB = 5.0
TJ = 25
°
C
1.00.1 2.0
+ 11 V
0
SCOPE
RB
[
20
– 5.0 V
tr, tf
v
10 ns
DUTY CYCLE = 1.0%
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
[
100 mA
MSD6100 USED BELOW IB
[
100 mA
25 µs
– 9.0 V
D
1
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V
CC
+ 125 V
RC
[
50
t
r
td @ V
BE(off)
= 5.0 V
t, TIME ( s)
µ
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07 3.00.30.2 0.5 0.7
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