ON Semiconductor 2N6437, 2N6438 Technical data

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ON Semiconductor

High-Power PNP Silicon Transistors

. . . designed for use in industrial–military power amplifier and

switching circuit applications.

• High Collector–Emitter Sustaining Voltage —

V

CEO(sus)

• High DC Current Gain —

hFE = 20–80 @IC = 10 Adc

• Low Collector–Emitter Saturation Voltage —

V

CE(sat)

• Fast Switching Times @ I

tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf = 0.25 µs (Max)

• Complement to NPN 2N6339 thru 2N6341

MAXIMUM RATINGS (1)

Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous

ОООООООООО

Base Current Total Device Dissipation @ TC = 25C

Derate above 25C

Operating and Storage Junction

ОООООООООО

Temperature Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

= 100 Vdc (Min) — 2N6437

= 120 Vdc (Min) — 2N6438

= 12 (Min) @ IC = 25 Adc

= 1.0 Vdc (Max) @ IC = 10 Adc

= 10 Adc

C

Rating

Peak

Characteristic

Symbol

V

CB

V

CEO

V

EB

I

C

ÎÎ

I

B

P

D

TJ,T

ÎÎ

Symbol

R

2N6437

120 100

ООООО

stg

θ

JC

–65 to +200

ООООО

6.0 25

50 10

200

1.14

2N6438

Max

0.875

140 120

Unit

Vdc Vdc Vdc Adc

Î

Adc

Watts W/C

C

Î

Unit

C/W

2N6437 2N6438

*ON Semiconductor Preferred Device

25 AMPERE

POWER TRANSISTORS

PNP SILICON

100, 120 VOL TS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

*

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

1 Publication Order Number:

April, 2001 – Rev. 2

2N6437/D

2N6437 2N6438

200

175

150

125

100

75

50

, POWER DISSIPATION (WATTS)

D

P

25

0

0 25 50 75 100 125 150 175 200

T

, CASE TEMPERATURE (°C)

C

Figure 1. Power Derating

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2

2N6437 2N6438

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*ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

= 50 mAdc, IB = 0) 2N6437

(I

C

ОООООООООООООООООООО

2N6438

Collector Cutoff Current

(V

= 50 Vdc, IB = 0) 2N6437

CE

ОООООООООООООООООООО

= 60 Vdc, IB = 0) 2N6438

(V

CE

Collector Cutoff Current

(V

ОООООООООООООООООООО

= 130 Vdc, V

(V

CE

(V

= 100 Vdc, V

CE

(V

= 120 Vdc, V

CE

= 110 Vdc, V

CE

= –1.5 Vdc) 2N6437

BE(off)

= –1.5 Vdc) 2N6438

BE(off)

= –1.5 Vdc, TC = 150C) 2N6437

BE(off)

= –1.5 Vdc, TC = 150C) 2N6438

BE(off)

Collector Cutoff Current

(V

= 120 Vdc, IE = 0) 2N6437

CB

ОООООООООООООООООООО

= 140 Vdc, IE = 0) 2N6438

(V

CB

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain (1)

(I

= 0.5 Adc, VCE = 2.0 Vdc)

C

ОООООООООООООООООООО

= 10 Adc, VCE = 2.0 Vdc)

(I

C

(I

= 25 Adc, VCE = 2.0 Vdc)

C

ОООООООООООООООООООО

Collector–Emitter Saturation Voltage (1)

(I

= 10 Adc, IB = 1.0 Adc)

C

ОООООООООООООООООООО

= 25 Adc, IB = 2.5 Adc)

(I

C

Base–Emitter Saturation Voltage (1)

= 10 Adc, IB = 1.0 Adc)

(I

C

ОООООООООООООООООООО

(I

= 25 Adc, IB = 2.5 Adc)

C

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f

= 10 MHz)

test

Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz)

SWITCHING CHARACTERISTICS

Rise Time (VCC = 80 Vdc, IC = 10 A, V Storage (VCC = 80 Vdc, IC = 10 A, V Fall Time (VCC = 80 Vdc, IC = 10 A,V

= 6.0 Vdc, IB1 = 1.0 Adc)

BE(off)

= 6.0 Vdc, IB1 = IB2 = 1.0 Adc)

BE(off)

= 6.0 Vdc, IB1 = IB2 = 1.0 Adc)

BE(off)

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width  300 µs; Duty Cycle  2.0%.

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CEX

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(sat)

ÎÎÎ

f

T

C

ob

t

r

t

s

t

f

Min

100 120

Î

—

Î

—

Î

—

Î

— —

Î

—

Î

— —

30

Î

20 12

Î

—

Î

—

Î

—

40 —

— — —

Max

— —

ÎÎ

50

ÎÎ

50

10

ÎÎ

10

ÎÎ

1.0

ÎÎ

10

ÎÎ

10

100

—

ÎÎ

120

—

ÎÎ

1.0

ÎÎ

1.8

ÎÎ

2.5

—

700

0.3

1.0

0.25

Unit

Vdc

Î

µAdc

Î

µAdc

Î

mAdc

Î

µAdc

Î

µAdc

—

Î

Vdc

Î

Vdc

Î

MHz

pF

µs µs µs

+ 9.0 V

0

- 11 V 10

µs

, tf  10 ns

t

r

DUTY CYCLE = 1.0%

NOTE: For information on Figures 3 and 6, R

varied to obtain desired test conditions.

Figure 2. Switching Time Test Circuit

RB =

10 OHMS

MBR74

5

- 5.0 V

V

CC

+ 80 V

R

8.0 OHMS

and RC were

B

C

SCOPE

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3

0.3

0.2

1.0

td @ V

BE(off)

= 6.0 V

VCC = 80 V I

= 10

C/IB

= 25°C

T

J

0.7

0.5

0.3

0.2

t, TIME (s)µ

t

r

0.1

0.07

0.05

0.03

0.3

0.5

0.7 2.0 3.0 7.0

1.0 10

5.0 20

30

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn–On Time