ON Semiconductor 2N6426, 2N6427 Service Manual
2N6426, 2N6427
2N6426 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
CEO
CBO
EBO
P
P
TJ, T
C
D
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
R
q
JA
R
q
JC
40 Vdc
40 Vdc
12 Vdc
500 mAdc
625
5.0
1.5
12
−55 to +150 °C
200 °C/W
83.3 °C/W
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 1
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COLLECTOR 3
BASE
2
EMITTER 1
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1 Publication Order Number:
2N
642x
AYWWG
G
x = 6 or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
2N6426/D
2N6426, 2N6427
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1)
(I
= 10 mAdc, VBE = 0)
C
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
= 10 mAdc, IC = 0)
(I
E
Collector Cutoff Current
(V
= 25 Vdc, IB = 0)
CE
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current
(V
= 10 Vdc, IC = 0)
EB
ON CHARACTERISTICS
DC Current Gain, (Note 1)
(I
= 10 mAdc, VCE = 5.0 Vdc) 2N6426
C
(IC = 100 mAdc, VCE = 5.0 Vdc) 2N6426
(IC = 500 mAdc, VCE = 5.0 Vdc) 2N6426
Collector−Emitter Saturation Voltage
(I
= 50 mAdc, IB = 0.5 mAdc)
C
(IC = 500 mAdc, IB = 0.5 mAdc
Base−Emitter Saturation Voltage
(I
= 500 mAdc, IB = 0.5 mAdc)
C
Base−Emitter On Voltage
(I
= 50 mAdc, VCE = 5.0 Vdc)
C
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(V
= 10 Vdc, IE = 0, f = 1.0 MHz)
CB
Input Capacitance
(V
= 1.0 Vdc, IC = 0, f = 1.0 MHz)
EB
Input Impedance
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426
C
Small−Signal Current Gain
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) 2N6426
C
Current−Gain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2N6426
Output Admittance
(I
= 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
C
Noise Figure
= 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
(I
C
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2N6427
2N6427
2N6427
2N6427
2N6427
2N6427
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
I
EBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
C
h
FE
ibo
ie
40 − − Vdc
40 − − Vdc
12 − − Vdc
− − 1.0
− − 50 nAdc
− − 50 nAdc
20,000
10,000
30,000
20,000
20,000
14,000
−
−
−
−
−
−
−
−
0.71
0.9
200,000
100,000
300,000
200,000
200,000
140,000
1.2
1.5
− 1.52 2.0 Vdc
− 1.24 1.75 Vdc
− 5.4 7.0 pF
− 10 15 pF
100
50
−
−
2000
1000
mAdc
Vdc
kW
hfe
20,000
10,000
−
−
−
−
|hfe|
1.5
1.3
h
oe
− − 1000
2.4
2.4
−
−
mmhos
NF − 3.0 10 dB
−
−
−
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