ON Semiconductor 2N6338, 2N6341 Service Manual
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ON Semiconductort
High−Power NPN Silicon
Transistors
. . . designed for use in industrial−military power amplifier and
switching circuit applications.
• High Collector−Emitter Sustaining Voltage −
V
CEO(sus)
• High DC Current Gain −
h
FE
• Low Collector−Emitter Saturation Voltage −
V
CE(sat)
• Fast Switching Times @ I
= 0.3 ms (Max)
t
r
t
= 1.0 ms (Max)
s
= 0.25 ms (Max)
t
f
w These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
*MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Continuous
ООООООО
Peak
Base Current
Total Device Dissipation
= 25_C
@ T
C
ООООООО
Derate above 25_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
*Indicates JEDEC Registered Data.
= 100 Vdc (Min) − 2N6338
= 150 Vdc (Min) − 2N6341
= 30 − 120 @ IC = 10 Adc
= 12 (Min) @ I
= 25 Adc
C
= 1.0 Vdc (Max) @ IC = 10 Adc
= 10 Adc
C
Symbol
V
CB
V
CEO
V
EB
I
C
ÎÎ
I
B
P
D
ÎÎ
TJ, T
stg
Characteristic
2N6338
120
100
2N6341
180
150
6.0
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25
50
10
ОООООООО
200
1.14
–65 to +200
Symbol
θ
JC
Max
0.875
Unit
Vdc
Vdc
Vdc
Adc
Î
Adc
Watts
Î
W/°C
_C
Unit
_C/W
2N6338
2N6341
*ON Semiconductor Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
CASE 1−07
TO−204AA
(TO−3)
*
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 11
1 Publication Order Number:
2N6338/D
2N6338 2N6341
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200
175
150
125
100
75
50
, POWER DISSIPATION (WATTS)
D
P
25
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
*ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1) 2N6338
(I
= 50 mAdc, IB = 0) 2N6341
C
ОООООООООООООООООООО
Collector Cutoff Current
(V
= 50 Vdc, IB = 0) 2N6338
CE
ОООООООООООООООООООО
= 75 Vdc, IB = 0) 2N6341
(V
CE
Collector Cutoff Current
(V
= Rated V
CE
ОООООООООООООООООООО
(V
= Rated V
CE
CEO
CEO
, V
= 1.5 Vdc)
EB(off)
, V
= 1.5 Vdc, TC = 150_C)
EB(off)
Collector Cutoff Current (VCB = Rated VCB, IE = 0)
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)
DC Current Gain)
(I
= 0.5 Adc, VCE = 2.0 Vdc)
C
ОООООООООООООООООООО
= 10 Adc, VCE = 2.0 Vdc)
(I
C
(I
= 25 Adc, VCE = 2.0 Vdc)
ОООООООООООООООООООО
C
Collector Emitter Saturation Voltage
(I
= 10 Adc, IB = 1.0 Adc)
C
ОООООООООООООООООООО
= 25 Adc, IB = 2.5 Adc)
(I
C
Base−Emitter Saturation Voltage
ОООООООООООООООООООО
(I
= 10 Adc, IB = 1.0 Adc)
C
= 25 Adc, IB = 2.5 Adc)
(I
C
ОООООООООООООООООООО
Base−Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, f
= 10 MHz)
test
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS
Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, V
BE(off)
= 6.0 Vdc)
Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
(2) f
= |hfe| • f
T
test
.
Symbol
V
CEO(sus)
ÎÎÎ
I
CEO
ÎÎÎ
I
CEX
ÎÎÎ
I
CBO
I
EBO
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
ÎÎÎ
V
BE(sat)
ÎÎÎ
ÎÎÎ
V
BE(on)
f
T
C
ob
t
r
t
s
t
f
Min
100
150
Î
−
Î
−
−
Î
−
−
−
50
Î
30
Î
12
−
Î
−
Î
−
−
Î
−
40
−
−
−
−
Max
−
−
ÎÎ
50
ÎÎ
50
10
ÎÎ
1.0
10
100
−
ÎÎ
120
ÎÎ
−
1.0
ÎÎ
1.8
ÎÎ
1.8
2.5
ÎÎ
1.8
−
300
0.3
1.0
0.25
Unit
Vdc
Î
μAdc
Î
μAdc
Î
mAdc
μAdc
μAdc
−
Î
Î
Vdc
Î
Vdc
Î
Î
Vdc
MHz
pF
μs
μs
μs
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