ON Semiconductor 2N6031, 2N5631 Datasheet

Î

ON Semiconductor

High-Voltage - High Power Transistors

. . . designed for use in high power audio amplifier applications and

high voltage switching regulator circuits.

• High Collector Emitter Sustaining Voltage –

V

CEO(sus)

• High DC Current Gain – @ I

hFE = 15 (Min)

• Low Collector–Emitter Saturation Voltage –

V

CE(sat)

MAXIMUM RATINGS (1)

Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous

Base Current – Continuous Total Device Dissipation @ TC = 25C

Derate above 25C

ООООООООО

Operating and Storage Junction

Temperature Range

= 140 Vdc

C

= 1.0 Vdc (Max) @ I

Rating

Peak

= 8.0 Adc

C

Symbol

ÎÎÎ

TJ, T

= 10 Adc

V

CEO

V

CB

V

EB

I

C

I

B

P

D

stg

Value

140 140

7.0 16

20

5.0

200

1.14

ООООО

–65 to +200

Unit

Vdc Vdc Vdc Adc

Adc

Watts W/C

Î

C

NPN

2N5631

PNP

2N6031

16 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

140 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

THERMAL CHARACTERISTICS (1)

ООООООООООООООООООООО

Characteristic

Thermal Resistance, Junction to Case

Symbol

θ

JC

Max

0.875

Unit

C/W

(1) Indicates JEDEC Registered Data.

200

150

100

50

, POWER DISSIPATION (WATTS)

D

P

0

0 20 40 60 80 100 120 140 200

T

, TEMPERATURE (°C)

C

160 180

Figure 1. Power Derating

Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.

 Semiconductor Components Industries, LLC, 2001

May, 2001 – Rev. 0

1 Publication Order Number:

2N5631/D

2N5631 2N6031

Î

ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (2)

(I

= 200 mAdc, IB = 0)

C

ОООООООООООООООООООО

Collector–Emitter Cutoff Current

(V

= 70 Vdc, IB = 0)

CE

ОООООООООООООООООООО

Collector–Emitter Cutoff Current

(V

= Rated VCB, V

CE

ОООООООООООООООООООО

(V

= Rated VCB, V

CE

ОООООООООООООООООООО

Collector–Base Cutoff Current

ОООООООООООООООООООО

(V

= Rated VCB, IE = 0)

CB

= 1.5 Vdc)

EB(off)

= 1.5 Vdc, TC = 150C)

EB(off)

Emitter–Base Cutoff Current

(V

ОООООООООООООООООООО

= 7.0 Vdc, IC = 0)

BE

ON CHARACTERISTICS (2)

DC Current Gain

(I

= 8 Adc, VCE = 2.0 Vdc)

C

ОООООООООООООООООООО

= 16 Adc, VCE = 2.0 Vdc)

(I

C

Collector–Emitter Saturation Voltage

(I

= 10 Adc, IB = 1.0 Adc)

ОООООООООООООООООООО

C

= 16 Adc, IB = 4.0 Adc)

(I

C

ОООООООООООООООООООО

Base–Emitter Saturation Voltage

(I

= 10 Adc, IB = 1.0 Adc)

C

Base–Emitter On Voltage

ОООООООООООООООООООО

(I

= 8.0 Adc, VCE = 2.0 Vdc)

C

DYNAMIC CHARACTERISTICS

Current–Gain – Bandwidth Product (3)

= 1.0 Adc, VCE = 20 Vdc, f

(I

C

ОООООООООООООООООООО

= 0.5 MHz)

test

Output Capacitance 2N5631

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) 2N6031

CB

Small–Signal Current Gain

ОООООООООООООООООООО

(I

= 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)

C

*Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 µs, Duty Cycle  2.0%.

= |hfe| • f

(2) f

T

test

Symbol

V

CEO(sus)

ÎÎÎ

I

CEO

ÎÎÎ

I

CEX

ÎÎÎ

I

CBO

ÎÎÎ

I

EBO

ÎÎÎ

h

FE

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(sat)

V

BE(on)

ÎÎÎ

f

T

ÎÎÎ

C

ob

h

fe

ÎÎÎ

Min

140

Î

–

Î

–

Î

–

Î

–

Î

15

Î

4.0

Î

– –

Î

–

Î

1.0

Î

– –

15

Î

Max

–

ÎÎ

2.0

ÎÎ

7.0

ÎÎ

2.0

ÎÎ

5.0

ÎÎ

60

ÎÎ

–

ÎÎ

1.0

2.0

ÎÎ

1.8

1.5

ÎÎ

–

ÎÎ

500

1000

–

ÎÎ

Unit

Vdc

Î

mAdc

Î

mAdc

Î

mAdc

Î

mAdc

Î

–

Î

Vdc

Î

Vdc

Î

MHz

Î

pF

–

Î

25 µs

+11 V

0

-9.0 V

tr, t

≤ 10 ns

f

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

For PNP test circuit, reverse all polarities and D1.

Figure 2. Switching Times Test Circuit

V

CC

+30 V

R

C

R

B

51

D

1

-4 V

MUST BE FAST RECOVERY TYPE, e.g.:

D

1

1N5825 USED ABOVE I MSD6100 USED BELOW I

≈ 100 mA

B

≈ 100 mA

B

3.0

2.0

1.0

SCOPE

0.7

0.5

0.3

0.2

t, TIME (s)µ

0.1

0.07

0.05

0.03

0.2

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2

T

= 25°C

J

I

= 10

C/IB

V

= 30 V

CE

t

r

td @ V

BE(off)

= 5.0 V

2N5631 2N6031

0.3 0.5 0.7 1.0 2.0 3.0 7.0 20

5.0 10

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn–On Time

1.0

0.5

2N5631 2N6031

D = 0.5

0.2

0.1

0.05

RESISTANCE (NORMALIZED)

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

0.02

20

10

7.0

5.0

3.0

2.0

1.0

0.7 CURVES APPLY BELOW

, COLLECTOR CURRENT (AMP)

0.5

C

I

0.3

0.2

2.0

0.2

0.1

0.05

0.02

SINGLE PULSE

0.05

T

= 200°C

J

SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ T

RATED V

CEO

3.0 5.0 7.0 10 20 30 50 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.01

0.1 0.2 0.5 5.0 10 20 50 100 200 500 20001000

= 25°C

C

1.0ms

0.5ms

5.0ms

dc

2N5631, 2N6031

1.0 2.0 t, TIME (ms)

Figure 4. Thermal Response

a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable

50ms

operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T  200C. T Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

100

70

limitations imposed by second breakdown.

P

θJC(t) = r(t) θ θJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

J(pk)

- TC = P

JC

(pk) θJC

1

(t)

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

There are two limitations on the power handling ability of

– V

C

CE

The data of Figure 5 is based on T

may be calculated from the data in

J(pk)

= 200C; TC is

J(pk)

Figure 5. Active–Region Safe Operating Area

NPN 2N5631

5.0 T

J

I

3.0

2.0

1.0

0.7

0.5

0.2

0.3 0.7 1.0 2.0 7.0 10 20

0.5 3.0 IC, COLLECTOR CURRENT (AMP)

t

s

t

f

C/IB

I

B1

VCE = 30 V

5.0

= 25°C

= 10

= I

B2

Figure 6. Turn–Off Time

t, TIME (s)µ

PNP 2N6031

4.0

3.0

2.0

1.0

0.6

0.4

0.3

0.2

0.5 3.0

0.3 0.7 1.0 2.0 7.0 10 20 I

, COLLECTOR CURRENT (AMP)

C

t

s

t

f

5.0

T

= 25°C

J

I

= I

B1

B2

IC/IB = 10 V

= 30 V

CE

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