OM360NK OM10N100NK
OM460NK
POWER MOSFETS IN A TO-3 PACKAGE
400V Thru 1000V, N-Channel
Size 6 MOSFETs, High Energy Capability
FEATURES
•TO-3 Package Hermetic, .060 Dia. Leads
•Size 6 Die, High Energy
•Fast Switching, Low Drive Current
•Low RDS(on)
•Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures.
MAXIMUM RATINGS
PART NUMBER |
VDS (V) |
RDS(on) ( ) |
ID (A) |
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OM360NK |
400 |
.20 |
24 |
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3.1 |
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OM460NK |
500 |
.25 |
22 |
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OM10N100NK |
1000 |
1.30 |
10 |
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SCHEMATIC
Drain
Gate
Source
4 11 R1 |
3.1 - 37 |
Supersedes 3 12 R0 |
OM360NK - OM10N100NK
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ELECTRICAL CHARACTERISTICS: |
OM360NK |
(TC = 25° unless otherwise noted) |
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Characteristic |
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Symbol |
Min. |
Typ. |
Max. |
Unit |
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OFF CHARACTERISTICS |
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Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) |
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V(BR)DSS |
400 |
- |
- |
Vdc |
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Zero Gate Voltage Drain |
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IDSS |
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mAdc |
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(VDS = 400 V, VGS = 0) |
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- |
- |
0.25 |
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(VDS = 400 V, VGS = 0, TJ = 125° C) |
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- |
- |
1.0 |
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Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) |
IGSSF |
- |
- |
100 |
nAdc |
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Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) |
IGSSR |
- |
- |
100 |
nAdc |
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ON CHARACTERISTICS* |
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Gate-Threshold Voltage |
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VGS(th) |
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Vdc |
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(VDS = VGS, ID = 0.25 mAdc) |
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2.0 |
3.0 |
4.0 |
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(TJ = 125° C) |
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1.5 |
- |
3.5 |
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Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc) |
RDS(on) |
- |
- |
0.20 |
Ohm |
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Drain-Source On-Voltage (VGS = 10 Vdc) |
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VDS(on) |
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Vdc |
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(ID = 24 A) |
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- |
- |
5.4 |
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(ID = 12 A, TJ = 125° C) |
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- |
- |
5.4 |
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Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc) |
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gFS |
14 |
- |
- |
mhos |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VDS = 25 V, VGS = 0, |
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Ciss |
- |
4000 |
- |
pF |
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Output Capacitance |
|
f = 1.0 MHz) |
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Coss |
- |
550 |
- |
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Transfer Capacitance |
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Crss |
- |
110 |
- |
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SWITCHING CHARACTERISTICS |
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Turn-On Delay Time |
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td(on) |
- |
30 |
- |
ns |
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Rise Time |
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(VDD = 200 V, ID = 24 A, |
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tr |
- |
95 |
- |
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Turn-Off Delay Time |
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Rgen = 4.3 ohms) |
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td(off) |
- |
80 |
- |
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Fall Time |
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tf |
- |
80 |
- |
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Total Gate Charge |
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(VDS = 320 V, ID = 24 A, |
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Qg |
- |
110 |
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nC |
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Gate-Source Charge |
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VGS = 10 V) |
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Qgs |
- |
22 |
- |
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Gate-Drain Charge |
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Qgd |
- |
46 |
- |
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SOURCE DRAIN DIODE CHARACTERISTICS |
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Forward On-Voltage |
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VSD |
- |
1.1 |
1.6 |
Vdc |
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Forward Turn-On Time |
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(IS = 24 A, d/dt = 100 A/µs) |
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ton |
- |
** |
- |
ns |
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Reverse Recovery Time |
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trr |
- |
500 |
1000 |
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ELECTRICAL CHARACTERISTICS: |
OM460NK |
(TC = 25° unless otherwise noted) |
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Characteristic |
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|
Symbol |
Min. |
Typ. |
Max. |
Unit |
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OFF CHARACTERISTICS |
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Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) |
|
V(BR)DSS |
500 |
- |
- |
Vdc |
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Zero Gate Voltage Drain |
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IDSS |
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mAdc |
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(VDS = 500 V, VGS = 0) |
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- |
- |
0.25 |
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(VDS = 500 V, VGS = 0, TJ = 125° C) |
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- |
- |
1.0 |
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Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) |
IGSSF |
- |
- |
100 |
nAdc |
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Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) |
IGSSR |
- |
- |
100 |
nAdc |
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ON CHARACTERISTICS* |
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Gate-Threshold Voltage |
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VGS(th) |
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Vdc |
|
3.1 |
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(VDS = VGS, ID = 0.25 mAdc) |
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2.0 |
3.0 |
4.0 |
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(TJ = 125° C) |
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1.5 |
- |
3.5 |
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Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc) |
RDS(on) |
- |
- |
0.25 |
Ohm |
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Drain-Source On-Voltage (VGS = 10 Vdc) |
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VDS(on) |
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Vdc |
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(ID = 22 A) |
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- |
- |
8.0 |
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(ID = 11 A, TJ = 125° C) |
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- |
- |
8.0 |
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Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc) |
|
gFS |
11 |
- |
- |
mhos |
|||
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
|
(VDS = 25 V, VGS = 0, |
|
Ciss |
- |
4000 |
- |
pF |
|
|
|
Output Capacitance |
|
f = 1.0 MHz) |
|
Coss |
- |
480 |
- |
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Transfer Capacitance |
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Crss |
- |
95 |
- |
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SWITCHING CHARACTERISTICS |
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Turn-On Delay Time |
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td(on) |
- |
32 |
- |
ns |
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Rise Time |
|
(VDD = 250 V, ID = 22 A, |
|
tr |
- |
95 |
- |
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Turn-Off Delay Time |
|
Rgen = 4.3 ohms) |
|
Td(off) |
- |
80 |
- |
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Fall Time |
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|
tf |
- |
80 |
- |
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|
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Total Gate Charge |
|
(VDS = 400 V, ID = 22 A, |
|
Qg |
- |
115 |
- |
nC |
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Gate-Source Charge |
|
VGS = 10 V) |
|
Qgs |
- |
22 |
- |
|
|
|
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Gate-Drain Charge |
|
|
|
|
Qgd |
- |
46 |
- |
|
|
|
SOURCE DRAIN DIODE CHARACTERISTICS |
|
|
|
|
|
|
|||
|
|
Forward On-Voltage |
|
|
|
|
VSD |
- |
1.1 |
1.6 |
Vdc |
|
|
Forward Turn-On Time |
|
(IS = 22 A, d/dt =100 A/µs) |
|
ton |
- |
** |
- |
ns |
|
|
|
Reverse Recovery Time |
|
|
|
|
trr |
- |
500 |
1000 |
|
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%. ** Limited by circuit inductance
3.1 - 38