NSC 5962-9758401QDA, 5962-9758401QCA, 5962-9758401Q2A, 54F20DM, 54F20DC Datasheet

TL/F/9462

54F/74F20 Dual 4-Input NAND Gate

November 1994

54F/74F20
Dual 4-Input NAND Gate

General Description

This device contains two independent gates, each of which
performs the logic NAND function.

Commercial Military

Package

Package Description

Number

74F20PC N14A 14-Lead (0.300×Wide) Molded Dual-In-Line

54F20DM (Note 2) J14A 14-Lead Ceramic Dual-In-Line

74F20SC (Note 1) M14A 14-Lead (0.150×Wide) Molded Small Outline, JEDEC

74F20SJ (Note 1) M14D 14-Lead (0.300×Wide) Molded Small Outline, EIAJ

54F20FM (Note 2) W14B 14-Lead Cerpack

54F20LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C

Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.

Note 2: Military grade device with environmental and burn-in processing. Use suffix

e

DMQB, FMQB and LMQB.

Logic Symbol

IEEE/IEC

TL/F/9462– 3

Connection Diagrams

Pin Assignment

for DIP, SOIC and Flatpak

TL/F/9462– 2

Pin Assignment

for LCC

TL/F/9462– 1

Unit Loading/Fan Out

54F/74F

Pin Names Description

U.L. Input I

IH/IIL

HIGH/LOW Output IOH/I

OL

An,Bn,Cn,D

n

Inputs 1.0/1.0 20 mA/b0.6 mA

O

n

Outputs 50/33.3

b

1 mA/20 mA

TRI-STATEÉis a registered trademark of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature

b

65§Ctoa150§C

Ambient Temperature under Bias

b

55§Ctoa125§C

Junction Temperature under Bias

b

55§Ctoa175§C

Plastic

b

55§Ctoa150§C

V

CC

Pin Potential to

Ground Pin

b

0.5V toa7.0V

Input Voltage (Note 2)

b

0.5V toa7.0V

Input Current (Note 2)

b

30 mA toa5.0 mA

Voltage Applied to Output

in HIGH State (with V

CC

e

0V)

Standard Output

b

0.5V to V

CC

TRI-STATEÉOutput

b

0.5V toa5.5V

Current Applied to Output

in LOW State (Max) twice the rated I

OL

(mA)

Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.

Note 2: Either voltage limit or current limit is sufficient to protect inputs.

Recommended Operating
Conditions

Free Air Ambient Temperature

Military

b

55§Ctoa125§C

Commercial 0

§

Ctoa70§C

Supply Voltage

Military

a

4.5V toa5.5V

Commercial

a

4.5V toa5.5V

DC Electrical Characteristics

Symbol Parameter

54F/74F

Units V

CC

Conditions

Min Typ Max

V

IH

Input HIGH Voltage 2.0 V Recognized as a HIGH Signal

V

IL

Input LOW Voltage 0.8 V Recognized as a LOW Signal

V

CD

Input Clamp Diode Voltage

b

1.2 V Min I

IN

eb

18 mA

V

OH

Output HIGH 54F 10% V

CC

2.5 I

OH

eb

1mA

Voltage 74F 10% V

CC

2.5 V Min I

OH

eb

1mA

74F 5% V

CC

2.7 I

OH

eb

1mA

V

OL

Output LOW 54F 10% V

CC

0.5
V Min

I

OL

e

20 mA

Voltage 74F 10% V

CC

0.5 I

OL

e

20 mA

I

IH

Input HIGH 54F 20.0

mA Max V

IN

e

2.7V

Current 74F 5.0

I

BVI

Input HIGH Current 54F 100

mA Max V

IN

e

7.0V

Breakdown Test 74F 7.0

I

CEX

Output HIGH 54F 250

mA Max V

OUT

e

V

CC

Leakage Current 74F 50

V

ID

Input Leakage

74F 4.75 V 0.0

I

ID

e

1.9 mA

Test All other pins grounded

I

OD

Output Leakage

74F 3.75 mA 0.0

V

IOD

e

150 mV

Circuit Current All other pins grounded

I

IL

Input LOW Current

b

0.6 mA Max V

IN

e

0.5V

I

OS

Output Short-Circuit Current

b

60

b

150 mA Max V

OUT

e

0V

I

CCH

Power Supply Current 0.9 1.4 mA Max V

O

e

HIGH

I

CCL

Power Supply Current 3.4 5.1 mA Max V

O

e

LOW

2